NSF Award
8861370
Amorphous silicon-carbide materials are proposed to be incorporated into electroluminescent thin-film devices. These materials, due to their non-conserved momentum transitions, offer high luminescence efficiencies, and variable emission wavelengths, depending on the carbon content. At least two deposition methods are to be used to compare two types of electroluminescent structures. These methods are suitable for both insulator and amorphous silicon-carbide layers, as well as for n and p-doped layers. Compared to conventional large-area thin-film electroluminescent devices, the preparation can thus be integrated into one technique, and hence significantly reduce cost. Potential applications include liquid-crystal back- lighting, alphanumeric displays, x-y addressable monochrome and multicolor displays, ultimately leading to flat-panel color television.
