Claims
- 1. A solid state electroluminescent laser comprising:single crystalline metal oxide thin film selected from the group Al2O3 (sapphire), ZnO, MgO, LiNbO3, TiO3, SrTiO3, BaTiO3 and quartz that is doped with one or more rare earth elements selected from the group erbium, terbium, praseodymium, neodymium, samarium, europium, dysprosium, holmium, thulium and ytterbium and with a rare earth ionizing element selected from the group oxygen and fluorine, said rare earth ionizing element atom operating to ionize said one or more rare earth elements; said thin film having a top and a bottom surface; a first electrode in physical engagement with said top surface of said thin film; a second electrode in physical engagement with said bottom surface of said thin film; a source of DC voltage connected to said first and second electrodes so as to bias said first electrode negatively relative to said second electrode; said source of DC voltage having a magnitude so as to induce a high electrical field at a physical interface that exists between said first electrode and said top surface of said thin film, such that kinetic electrons are emitted from said first electrode and impact said one or more rare earth elements and raise the energy of electrons of said one or more rare earth elements to an excited state above a ground state, such that upon return of said one or more rare earth elements to said ground state, radiation is emitted by said one or more rare earth elements; and means operable to render said emitted radiation coherent.
- 2. The solid state electroluminescent laser of claim 1 wherein said thin film is about 1 micron thick, and wherein the high electrical field at said physical interface that exists between said first electrode and said top surface of said thin film is in the range of about 106 to 107 volts per centimeter.
- 3. The solid state electroluminescent laser of claim 1 wherein said means operable to render said emitted radiation coherent is a Fabry-Perot cavity that includes said thin film.
- 4. The solid state electroluminescent laser of claim 3 wherein said thin film is about 1 micron thick, and wherein the high electrical field at said physical interface that exists between said first electrode and said top surface of said thin film is in the range of about 106 to 107 volts per centimeter.
- 5. The solid state electroluminescent laser of claim 1 wherein said means operable to render said emitted radiation coherent is an acoustic generator that is associated with said thin film in a manner to produce a standing wave within said thin film.
- 6. The solid state electroluminescent laser of claim 5 wherein said standing wave is a sub-harmonic of the wavelength of said coherent radiation.
- 7. The solid state electroluminescent laser of claim 6 wherein said thin film is about 1 micron thick, and wherein the high electrical field at said physical interface that exists between said first electrode and said top surface of said thin film is in the range of about 106 to 107 volts per centimeter.
Parent Case Info
This application is a CIP of Ser. No. 09/154,813 filed Sep. 17, 1998 now U.S. Pat. No. 6,067,308.
US Referenced Citations (9)
Non-Patent Literature Citations (1)
Entry |
Article entitled “Photoemission from GaN” By J. I. Pankove et al., Applied Physics Letters, Jul. 1, 1974, No. 1, vol. 25, pp. 53 et seq. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09/154813 |
Sep 1998 |
US |
Child |
09/447161 |
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US |