Claims
- 1. A packed bed electrolytic reactor which comprises an anode, a cathode and a bed of a particulate ion exchange material packed between said anode and said cathode, said ion exchange material modified by having a portion of the total ion exchange sites converted to semiconductor junctions.
- 2. A packed bed electrolytic reactor as defined in claim 1, wherein said modified ion exchange material is a modified cation exchange material or a modified anion exchange material.
- 3. A packed bed electrolytic reactor as defined in claim 1, wherein said modified ion exchange material is a mixture of modified anion and cation exchange materials.
- 4. A packed bed electrolytic reactor as defined in claim 1, wherein said bed of particulate ion exchange material comprises at least two chambers containing ion exchange material, and said chambers being separated by at least one ion exchange membrane and the particulate ion exchange material of each of said chambers being in contact with at least one of the anode and the cathode.
- 5. A packed bed electrolytic reactor as defined in claim 1, wherein said modified ion exchange material is in physical contact with one or both of said anode and said cathode.
- 6. A packed bed electrolytic reactor as defined in claim 1, wherein said modified ion exchange material is separated from said anode and said cathode.
- 7. A packed bed electrolytic reactor as defined in claim 6, wherein said semiconductor junctions are sufficient to cause formation of regenerant ions under the influence of direct electrical potential.
- 8. A packed bed electrolytic reactor as defined in claim 1 wherein said semiconductor junctions are formed by permanently bonding counter ions to a portion of said ion exchange material.
- 9. An electrolytic reactor as defined in claim 8, wherein said ion exchange material is a cation exchange material and said semiconductor junctions are formed by polyvalent metal cations permanently bonded to said cation exchange material.
- 10. An electrolytic reactor as defined in claim 8, wherein said ion exchange material is an anion exchange material and said semiconductor junctions are formed by polyvalent anions permanently bonded to said anion exchange material.
RELATED APPLICATION
This application is a divisional of application Ser. No. 08/815,371, filed Mar. 10, 1997 now U.S. Pat. No. 6,024,850, which is a continuation-in-part of our application, Ser. No. 08/400,950, filed Mar. 9, 1995, now U.S. Pat. No. 5,609,742, which was a continuation-in-part of our earlier application, Ser. No. 08/141,675, filed Oct. 27, 1993, now U.S. Pat. No. 5,419,816. This application is also a continuation of our earlier application, Ser. No. 08/639,756, filed Apr. 29, 1996, now U.S. Pat. No. 5,705,050, to the extent certain disclosures therein are carried forward in the present application.
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Continuation in Parts (3)
|
Number |
Date |
Country |
| Parent |
08/400950 |
Mar 1995 |
US |
| Child |
08/815371 |
|
US |
| Parent |
08/141675 |
Oct 1993 |
US |
| Child |
08/400950 |
|
US |
| Parent |
08/639756 |
Apr 1996 |
US |
| Child |
08/141675 |
|
US |