The present disclosure relates to a household appliances technology field, and more particularly to a method for controlling an electromagnetic heating system, a device for controlling an electromagnetic heating system and an electromagnetic heating system.
In the related art, an electromagnetic resonance circuit with a single IGBT usually adopts a parallel resonance mode, and resonance parameters are set on a premise of realizing a high power operation. As illustrated in
Embodiments of the present disclosure seek to solve at least one of the problems existing in the related art to at least some extent. Accordingly, one embodiment provides a method for controlling an electromagnetic heating system, which may restrain a pulse current of a power switch transistor and realize a low power heating.
Another embodiment, provides a device for controlling an electromagnetic heating system.
In yet another embodiment, an electromagnetic heating system is provided.
One embodiment, provides a method for controlling an electromagnetic heating system. The method includes obtaining a target heating power of the electromagnetic heating system; determining whether the target heating power is less than a preset power; and when the target heating power is less than the preset power, controlling, in each control period, a resonance circuit of the electromagnetic heating system to enter into a discharging stage, a heating stage, and a stop stage successively, in which a power switch transistor of the resonance circuit is driven by a first driving voltage in the discharging stage such that the power switch transistor works in an amplification state.
With the method for controlling an electromagnetic heating system provided by embodiments of the present disclosure, the target heating power of the electromagnetic heating system is obtained firstly, and then it is determined whether the target heating power is less than the preset power, if the target heating power is less than the preset power, the resonance circuit of the electromagnetic heating system is controlled to enter into the discharging stage, the heating stage, and the stop stage successively in each control period, in which the power switch transistor of the resonance circuit is driven by the first driving voltage in the discharging stage such that the power switch transistor works in the amplification state. In this way, a pulse current of the power switch transistor may be restrained, and a low power heating may be realized by using a heating mode with a millisecond-level duty ratio, thus improving user experience.
In addition, the method for controlling an electromagnetic heating system according to above embodiments of the present disclosure may further has following additional technical features.
According to an embodiment of the present disclosure, in the heating stage, the power switch transistor is driven by the first driving voltage to switch on for a preset period, and the power switch transistor is driven by a second driving voltage to switch on such that the power switch transistor works in a saturation state; and in the stop stage, the power switch transistor of the resonance circuit is driven by a third driving voltage to switch off.
According to an embodiment of the present disclosure, the above method for controlling an electromagnetic heating system which further includes detecting a zero crossing point of an alternating current provided to the electromagnetic heating system; and in each control period, controlling the resonance circuit to enter into the heating stage and the stop stage according to the zero crossing point.
According to an embodiment of the present disclosure, the first driving voltage is larger than or equal to 5V and is less than or equal to 14.5V, the second driving voltage is larger than or equal to 15V. According to an embodiment of the present disclosure, the preset period is larger than or equal to 0.5 μs and is less than or equal to 5 μs.
According to an embodiment of the present disclosure, the power switch transistor of the resonance circuit is driven by the first driving voltage in the discharging stage to switch on by: providing M pulse signals each with an amplitude of the first driving voltage to the power switch transistor in the discharging stage.
According to an embodiment of the present disclosure, pulse widths of the M pulse signals increase successively, and a difference between pulse widths of two adjacent pulse signals is less than or equal to a preset width threshold, where M is larger than or equal to 5 and M is a positive integer.
According to an embodiment of the present disclosure, the preset width threshold is less than or equal to 2 μs, a pulse width of a first pulse signal is less than or equal to 2 μs.
A second aspect of embodiments of the present disclosure provides a device for controlling an electromagnetic heating system. The system includes a driving device, coupled to a control end of a power switch transistor of the electromagnetic heating system so as to drive the power switch transistor. The system further includes an obtaining device, configured to obtain a target heating power of the electromagnetic heating system, and a control device, coupled to the obtaining device and the driving device respectively. The obtaining device is configured to determine whether the target heating power is less than a preset power, and to control, in each control period, a resonance circuit of the electromagnetic heating system to enter into a discharging stage, a heating stage, and a stop stage successively when the target heating power is less than the preset power, in which in the discharging stage, the driving device is controlled to drive the power switch transistor of the resonance circuit via a first driving voltage such that the power switch transistor works in an amplification state.
With the device for controlling an electromagnetic heating system provided by embodiments of the present disclosure, the target heating power of the electromagnetic heating system is obtained by the obtaining device, and the control device determines whether the target heating power is less than the preset power, if the target heating power is less than the preset power, the control device controls the resonance circuit of the electromagnetic heating system to enter into the discharging stage, the heating stage, and the stop stage successively in each control period, in which in the discharging stage. Further, the driving device is controlled to drive the power switch transistor of the resonance circuit via the first driving voltage such that the power switch transistor works in the amplification state. In this way, a pulse current of the power switch transistor may be restrained, and a low power heating may be realized by using a heating mode with a millisecond-level duty ratio, thus improving user experience.
According to an embodiment of the present disclosure, the control device is further configured to in the heating stage, control the driving device to provide the first driving voltage for driving the power switch transistor to switch on for a preset period and control the driving device to drive the power switch transistor via a second driving voltage to switch on such that the power switch transistor works in a saturation state, and in the stop stage, control the driving device to drive the power switch transistor via a third driving voltage to switch off.
According to an embodiment of the present disclosure, the above device for controlling an electromagnetic heating system further includes a zero crossing point detecting device, coupled to the control device, and configured to detect a zero crossing point of an alternating current provided to the electromagnetic heating system, in which, in each control period, the control device controls the resonance circuit to enter into the heating stage and the stop stage according to the zero crossing point.
According to an embodiment of the present disclosure, the first driving voltage is larger than or equal to 5V and is less than or equal to 14.5V, the second driving voltage is larger than or equal to 15V. According to an embodiment of the present disclosure, the preset period is larger than or equal to 0.5 μs and is less than or equal to 5 μs.
A third aspect of embodiments of the present disclosure provides an electromagnetic heating system, including a device for controlling an electromagnetic heating system provided by above embodiments.
With the electromagnetic heating system provided by embodiments of the present disclosure, by the device for controlling an electromagnetic heating system, a pulse current of the power switch transistor may be restrained, and a low power heating may be realized by using a heating mode with a millisecond-level duty ratio, thus improving user experience.
Reference will be made in detail to embodiments of the present disclosure. The same or similar elements and the elements having same or similar functions are denoted by like reference numerals throughout the descriptions. The embodiments described herein with reference to drawings are explanatory, illustrative, and used to generally understand the present disclosure. The embodiments shall not be construed to limit the present disclosure.
In the following, a method and a device for controlling an electromagnetic heating system and an electromagnetic heating system provided by embodiments of the present disclosure are described with reference to drawings.
At block S101, a target heating power W1 of the electromagnetic heating system is obtained.
The target heating power W1 refers to heating power that the electromagnetic heating system may achieve under different cooking parameters. For example, when a user wants to make millet congee, the user may select a congee cooking mode on a control panel of the electromagnetic heating system. The electromagnetic heating system enters the congee cooking mode. The electromagnetic heating system may perform a low power heating with a power of 800 W under the congee cooking mode. At this time, a corresponding target heating power is 800 W.
At block S102, it is determined whether the target heating power W1 is less than a preset power W2.
The preset power W2 may be a power value determined according to an actual situation. When the target heating power W1 is less than the preset power W2, it is determined that the electromagnetic heating system performs the low power heating.
At block 103, if the target heating power W1 is less than the preset power W2, a resonance circuit of the electromagnetic heating system is controlled to enter into a discharging stage D1, a heating stage D2, and a stop stage D3 successively in each control period, in which a power switch transistor of the resonance circuit is driven by a first driving voltage V1 in the discharging stage D1 such that the power switch transistor works in an amplification state.
It should be understood that, as illustrated in
That is to say, when the target heating power W1 is less than the preset power W2, the electromagnetic heating system may perform the low power heating in a duty ratio mode. In each control period, the resonance circuit (such as C2 and L2 in parallel in
According to a specific example of the present disclosure, a duration of the discharging stage D1 may be larger than or equal to a first preset period, such as 1 ms.
Further, according to an embodiment of the present disclosure, as illustrated in
That is to say, after the discharging stage D1 is finished, the electromagnetic heating system is controlled to enter into the heating stage D2. In the heating stage D2, as illustrated in
In addition, after the heating stage D2 is finished, the electromagnetic heating system is controlled to enter into the stop stage D3. In the stop stage D3, the power switch transistor is controlled to switch off, and the electromagnetic heating system stops heating.
Thereby, above procedures are repeated in each control period to realize the low power heating in the duty ratio mode.
According to an embodiment of the present disclosure, as illustrated in
For example, as illustrated in
A duration of the heating stage D2 is two half-waves, in this situation, when a third zero crossing point A3 is detected, the stop stage D3 is started, the resonance circuit is controlled to stop heating. The stop stage D3 lasts for two half-waves.
According to an embodiment of the present disclosure, the first driving voltage V1 is larger than or equal to 5V and is less than or equal to 14.5V, the second driving voltage V2 is larger than or equal to 15V. In one embodiment of the present disclosure, the power switch transistor may be an IGBT, the first driving voltage V1 may be 9V. When the driving voltage of the IGBT is 9V, a current of a collector of the IGBT is constant, about 22A, and the IGBT works in an amplification state, thus the pulse current is well restrained. The second driving voltage V2 may be 15V. The IGBT works in the saturation state when being driven by the second driving voltage V2. The third driving voltage may be 0V. The IGBT is switched off when being driven by the third driving voltage V3.
According to an embodiment of the present disclosure, the preset period T1 is larger than or equal to 0.5 μs and is less than or equal to 5 μs.
According to an embodiment of the present disclosure, as illustrated in
According to an embodiment of the present disclosure, pulse widths Y of the M pulse signals increase successively, and a difference between pulse widths of two adjacent pulse signals is less than or equal to a preset width threshold N, where M is larger than or equal to 5 and M is a positive integer.
That is, in the discharging stage D1, the power switch transistor is driven by the M pulse signals to switch on and off to release the electric energy stored in the stop stage D3 by the filter capacitor. The pulse widths of the M pulse signals may be Ym, Ym-1, Ym-2, . . . , Y2, Y1. A relationship among the pulse widths of the M pulse signals may be: Ym>=Ym-1+N, Ym-1>=Ym-2+N, Y2 >=Y1+N.
According to an embodiment of the present disclosure, the preset width threshold N is less than or equal to 2 μs, a pulse width Y1 of a first pulse signal is less than or equal to 2 μs.
In conclusion, with the method for controlling an electromagnetic heating system provided by embodiments of the present disclosure, the target heating power of the electromagnetic heating system is obtained firstly, and then it is determined whether the target heating power is less than the preset power, if the target heating power is less than the preset power, the resonance circuit of the electromagnetic heating system is controlled to enter into the discharging stage, the heating stage, and the stop stage successively in each control period, in which the power switch transistor of the resonance circuit is driven by the first driving voltage in the discharging stage to switch on such that the power switch transistor works in the amplification state. In this way, the pulse current of the power switch transistor may be restrained, and a low power heating may be realized by using a heating mode with a millisecond-level duty ratio, thus improving user experience.
In addition,
The driving device 10 is coupled to a control end of a power switch transistor 10 of the electromagnetic heating system so as to drive the power switch transistor 40. The obtaining device 20 is configured to obtain a target heating power W1 of the electromagnetic heating system. The control device 30 is coupled to the obtaining device 20 and the driving device 10 respectively. The control device 30 is configured to determine whether the target heating power W1 is less than a preset power W2, and to control, in each control period, a resonance circuit of the electromagnetic heating system to enter into a discharging stage D1, a heating stage D2, and a stop stage D3 successively when the target heating power W1 is less than the preset power W2, in which in the discharging stage D1, the driving device 10 is controlled to drive the power switch transistor 40 of the resonance circuit via a first driving voltage V1 to switch on such that the power switch transistor 40 works in an amplification state.
According to an embodiment of the present disclosure, the control device 30 is further configured to: in the heating stage D2, control the driving device 10 to provide the first driving voltage V1 for driving the power switch transistor 40 to switch on for a preset period T1 and control the driving device 10 to drive the power switch transistor 40 via a second driving voltage V2 to switch on such that the power switch transistor 40 works in a saturation state, and in the stop stage D3, control the driving device 10 to drive the power switch transistor 40 via a third driving voltage V3 to switch off.
According to an embodiment of the present disclosure, in combination with
According to an embodiment of the present disclosure, the first driving voltage V1 is larger than or equal to 5V and is less than or equal to 14.5V, the second driving voltage V2 is larger than or equal to 15V.
In one embodiment of the present disclosure, the power switch transistor may be an IGBT. For example, the first driving voltage V1 is 9V. When the driving voltage of the IGBT is 9V, a current of a collector of the IGBT is constant, about 22A, and the IGBT works in an amplification state, thus the pulse current is well restrained. The second driving voltage V2 may be 15V. The IGBT works in the saturation state under driving of the second driving voltage V2. The third driving voltage may be 0V. The IGBT is switched off under driving of the third driving voltage V3.
According to an embodiment of the present disclosure, the preset period is larger than or equal to 0.5 μs and is less than or equal to 5 μs.
For example, as illustrated in
In the heating stage D2, the control device 30 first controls the driving device 10 to provide the first driving voltage V1, such as 9V, to drive the power switch transistor 40 to switch on. After the preset period T1, such as 2 μs, the control device 30 controls the driving device 10 to provide the second driving voltage V2 such as 15V, to drive the power switch transistor 40, such that the power switch transistor 40 works in a saturation state, and a first stepped driving pulse is finished. The heating stage D1 is composed by a plurality of stepped driving pulses and its duration is two half-waves. When the zero crossing point detecting device 50 detects the third zero crossing point A3, the stop stage D3 is started, the control device 30 controls the driving device 10 to provide the third driving voltage V3 to drive the power switch transistor 40 to switch off, and the resonance circuit stops heating. The third driving voltage V3 is 0V. The stop stage lasts for two half-waves.
In conclusion, with the device for controlling an electromagnetic heating system provided by embodiments of the present disclosure, the target heating power of the electromagnetic heating system is obtained by the obtaining device, and the control device determines whether the target heating power is less than the preset power, if the target heating power is less than the preset power, the control device controls the resonance circuit of the electromagnetic heating system to enter into the discharging stage, the heating stage, and the stop stage successively in each control period, in which the driving device is controlled to drive the power switch transistor of the resonance circuit to switch on via the first driving voltage in the discharging stage such that the power switch transistor works in the amplification state. In this way, the pulse current of the power switch transistor may be restrained, and a low power heating may be realized by using a heating mode with a millisecond-level duty ratio, thus improving user experience.
In addition, embodiments of the present disclosure further provide an electromagnetic heating system.
With the electromagnetic heating system provided by embodiments of the present disclosure, by the device for controlling an electromagnetic heating system, a pulse current of the power switch transistor may be restrained, and a low power heating may be realized by using a heating mode with a millisecond-level duty ratio, thus improving user experience.
In the specification, it is to be understood that terms such as “central,” “longitudinal,” “lateral,” “length,” “width,” “thickness,” “upper,” “lower,” “front,” “rear,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” “outer,” “clockwise,” and “counterclockwise” should be construed to refer to the orientation as then described or as shown in the drawings under discussion. These relative terms are for convenience of description and do not require that the present invention be constructed or operated in a particular orientation.
In addition, terms such as “first” and “second” are used herein for purposes of description and are not intended to indicate or imply relative importance or significance. Thus, the feature defined with “first” and “second” may comprise one or more this feature. In the description of the present disclosure, “a plurality of” means two or more than two, such as two or three, unless specified otherwise.
In the present invention, unless specified or limited otherwise, the terms “mounted,” “connected,” “coupled,” “fixed” and the like are used broadly, and may be, for example, fixed connections, detachable connections, or integral connections; may also be mechanical or electrical connections; may also be direct connections or indirect connections via intervening structures; may also be inner communications of two elements.
In the present invention, unless specified or limited otherwise, a structure in which a first feature is “on” or “below” a second feature may include an embodiment in which the first feature is in direct contact with the second feature, and may also include an embodiment in which the first feature and the second feature are not in direct contact with each other, but are contacted via an additional feature formed there between. Furthermore, a first feature “on,” “above,” or “on top of” a second feature may include an embodiment in which the first feature is right or obliquely “on,” “above,” or “on top of” the second feature, or just means that the first feature is at a height higher than that of the second feature; while a first feature “below,” “under,” or “on bottom of” a second feature may include an embodiment in which the first feature is right or obliquely “below,” “under,” or “on bottom of” the second feature, or just means that the first feature is at a height lower than that of the second feature.
Reference throughout this specification to “an embodiment,” “some embodiments,” “an example,” “a specific example,” or “some examples,” means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure. Thus, the appearances of the phrases such as “in some embodiments,” “in one embodiment”, “in an embodiment”, “in another example,” “in an example,” “in a specific example,” or “in some examples,” in various places throughout this specification are not necessarily referring to the same embodiment or example of the present disclosure. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.
Number | Date | Country | Kind |
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201610958337.2 | Nov 2016 | CN | national |
Filing Document | Filing Date | Country | Kind |
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PCT/CN2017/086297 | 5/27/2017 | WO | 00 |