Patent Application
20200128705
The present invention relates to an electromagnetic wave absorber and an electromagnetic wave absorber-attached molded article.
In recent years, electromagnetic waves in a range of millimeter waves having a wavelength of about 1 to 10 mm and a frequency of 30 to 300 GHz and quasi-millimeter waves have been used as information communication media. The use of such electromagnetic waves in anti-collision systems has been under consideration. An anti-collision system is a system, for example, installed in a vehicle, detecting obstacles to automatically put on the brakes, or measuring the speed of vehicles around the vehicle equipped with the system and distance between the vehicle and another vehicle to adjust the speed of the vehicle and distance between the two vehicles. To allow anti-collision systems to normally operate, reception of as few unnecessary electromagnetic waves as possible is important for prevention of false recognition. Therefore, it is conceivable to use an electromagnetic wave absorber in anti-collision systems to absorb unnecessary electromagnetic waves.
There are various types of electromagnetic wave absorbers classified according to their principles of electromagnetic wave absorption. For example, an electromagnetic wave absorber provided with an electromagnetic wave reflective layer, a dielectric layer having a thickness of λ/4 (λ is a wavelength of an electromagnetic wave to be absorbed), and a resistive film layer (such an electromagnetic wave absorber may be referred to as “λ/4 electromagnetic wave absorber”) can be produced at a low cost owing to relatively inexpensive materials and ease of design. For example, Patent Literature 1 proposes, as a λ/4 electromagnetic wave absorber, an electromagnetic wave absorber exercising its function in a wide incident angular range.
Patent Literature 1: JP 2003-198179 A
Patent Literature 1 fails to specifically discuss the durability (for example, chemical resistance) typically required in environments where electromagnetic wave absorbers are used.
Therefore, the present invention provides an electromagnetic wave absorber including a resistive layer that is advantageous for exhibiting good chemical resistance. The present invention also provides an electromagnetic wave absorber-attached molded article including such an electromagnetic wave absorber.
The present invention provides an electromagnetic wave absorber, including:
a dielectric layer;
a resistive layer that is disposed on one principal surface of the dielectric layer, comprises indium oxide as a main component, and has a polycrystalline structure; and
an electrical conductive layer that is disposed on the other principal surface of the dielectric layer and has a sheet resistance lower than a sheet resistance of the resistive layer, wherein
the resistive layer has a sheet resistance of 260 to 500Ω/□ and a specific resistance of 5×10−4 Ω·cm or more.
The present invention also provides an electromagnetic wave absorber-attached molded article, including:
a molded article; and
the above electromagnetic wave absorber attached to the molded article.
In the above electromagnetic wave absorber, the resistive layer has good chemical resistance.
Hereinafter, embodiments of the present invention will be described with reference to the drawings. The following description describes examples of the present invention, and the present invention is not limited to the following embodiments.
The present inventors have newly found the following problem in the course of considering application of electromagnetic wave absorbers to anti-collision systems. For example, when an electromagnetic wave absorber is used in an anti-collision system, the electromagnetic wave absorber is installed on a vehicle such as an automobile. A chemical such as a cleaner can be used sometimes for vehicle maintenance. For example, an alkaline solution can be used sometimes to wash vehicles. Thus, electromagnetic wave absorbers installed on vehicles can have contact with such a chemical while the vehicles are being washed. In particular, a resistive layer in a λ/4 electromagnetic wave absorber tends to be affected by such a chemical because the resistive layer is located near the surface of the electromagnetic wave absorber. This means that if a resistive layer of an electromagnetic wave absorber has good chemical resistance, a high-value added λ/4 electromagnetic wave absorber can be provided.
When a resistive layer for a λ/4 electromagnetic wave absorber has a sheet resistance closer to the characteristic impedance of air (about 377Ω/□), a good electromagnetic wave absorber is more likely to be obtained. It is conceivable that a material including indium oxide, such as indium tin oxide (ITO), as a main component is used as a resistive layer. ITO is also used in technical fields of, for example, flat panel displays and solar cells. An ITO used in these technical fields serves as a transparent electrode, and thus naturally has a low specific resistance (for example, 4×10−4 Ω·cm or less). Therefore, when a resistive layer of λ/4 electromagnetic wave absorber is formed using the ITO used in these technical fields, the thickness of the resistive layer needs to be reduced (to less than 15 nm, for example) to impart a desired sheet resistance to the resistive layer. However, reduction in thickness of a resistive layer makes it difficult to achieve good chemical resistance. Moreover, it is difficult to stably manufacture such a thin resistive layer.
The ITO serving as a transparent electrode in technical fields of, for example, flat panel displays and solar cells is often required to have good etching properties because of the need to form circuit patterns. Therefore, an ITO having an amorphous structure is preferably used in these technical fields. However, it is difficult to achieve good chemical resistance by using, as a resistive layer, an ITO having an amorphous structure and preferably used in these technical fields.
Therefore, through intensive studies for a technique capable of achieving good chemical resistance by using, as a resistive layer, a material including indium oxide as a main component, the present inventors have invented an electromagnetic wave absorber according to the present invention.
As shown in
The electromagnetic wave absorber 1 is a λ/4 electromagnetic wave absorber. The λ/4 electromagnetic wave absorber is designed so that incidence of an electromagnetic wave having a wavelength (λO) to be absorbed will result in interference between the electromagnetic wave reflected by the surface of the resistive layer 20 (front surface reflection) and the electromagnetic wave reflected by the electrical conductive layer 30 (back surface reflection). In the λ/4 electromagnetic wave absorber, the wavelength (λO) of an electromagnetic wave to be absorbed is determined according to the thickness (t) of the dielectric layer 10 and the relative permittivity (εr) of the dielectric layer 10, as shown in the following equation (1). That is, an electromagnetic wave having a wavelength to be absorbed can be set by appropriately adjusting the material and thickness of the dielectric layer 10. In the equation (1), sqrt(εr) means a square root of the relative permittivity (εr).
λO=4t×sqrt(εr) Equation (1)
As the resistive layer 20 has a sheet resistance of 260 to 500Ω/□, the resistive layer 20 has a characteristic impedance close to that of air and the electromagnetic wave absorber 1 can exhibit good electromagnetic wave absorption properties. For example, selective absorption of an electromagnetic wave having a wavelength generally employed by a millimeter-wave radar or quasi-millimeter-wave radar is made easy. For example, the electromagnetic wave absorber 1 can effectively attenuate an electromagnetic wave having a frequency of 50 to 100 GHz, particularly 60 to 90 GHz, employed by a millimeter-wave radar. Moreover, as the resistive layer 20 includes indium oxide as a main component and has a polycrystalline structure, the resistive layer 20 is likely to have good chemical resistance. Additionally, as the resistive layer 20 has a specific resistance of 5×10−4 Ω·cm or more, even the resistive layer 20 having a thickness greater than a predetermined value can have a sheet resistance of 260 to 500Ω/□. As a result, the electromagnetic wave absorber 1 can exhibit good electromagnetic wave absorption properties, and the resistive layer 20 and even the electromagnetic wave absorber 1 have good chemical resistance.
The resistive layer 20 has a specific resistance of, for example, 5×10−3 Ω·cm or less. In this case, the resistive layer thickness required to provide the resistive layer 20 with a sheet resistance of 260 to 500Ω/□ cannot be too large. This allows the resistive layer 20 to have good chemical resistance and can shorten the time required to form the resistive layer 20.
The resistive layer 20 has a thickness of, for example, 15 to 200 nm. This allows the resistive layer 20 to have good chemical resistance and can shorten the time required to form the resistive layer 20.
The resistive layer 20 may include indium oxide only, or may include a component other than indium oxide. When the resistive layer 20 includes a component other than indium oxide, the resistive layer 20 includes, for example, tin oxide. The content of the tin oxide in the resistive layer 20 is, for example, less than 5 weight %. An ITO containing less than 5 weight % of tin oxide is has a relatively high specific resistance, and the resistive layer 20 including such an ITO has a specific resistance of 5×10−4 Ω·cm or more.
The resistive layer 20 may include, for example, tin oxide and an impurity element. In this case, the content of the tin oxide in the resistive layer 20 is 5 weight % or more and less than 13 weight %. Additionally, the content of the impurity element in the resistive layer 20 is lower than the content of the tin oxide on a weight % basis. Even when the content of the tin oxide in the resistive layer 20 is 5 weight % or more and less than 13 weight %, the coexistence of the predetermined impurity element with the tin oxide allows the resistive layer 20 to have a relatively high specific resistance. Consequently, the resistive layer 20 has a specific resistance of 5×10−4 Ω·cm or more.
The above impurity element includes, for example, at least one of silicon, magnesium, titanium, and nitrogen. This allows the resistive layer 20 to have a relatively high specific resistance.
The resistive layer 20 can be formed, for example, by performing sputtering using a target material having a given composition and subjecting the resultant film to a heat treatment (annealing treatment). In this case, even when the film formed by the sputtering has an amorphous structure, the resistive layer 20 having a polycrystalline structure can be formed by the heat treatment. It should be noted that by adjusting the sputtering conditions such as a film formation temperature, the resistive layer 20 having a polycrystalline structure can be formed without performing the heat treatment after the sputtering.
As shown in
The polymer film 25 has a thickness of, for example, 10 to 150 μm, desirably 20 to 100 μm, and more desirably 30 to 80 μm. This can decrease the flexural rigidity of the polymer film 25, and can reduce occurrence of a crease or deformation in the case where the resistive layer 20 is formed on the polymer film 25.
The dielectric layer 10 has a relative permittivity of, for example, 1 to 10. This allows the electromagnetic wave absorber 1 to exhibit good electromagnetic wave absorption performance in a wide bandwidth (for example, a bandwidth of 2 GHz or more in the frequency band from 50 to 100 GHz). The relative permittivity of the dielectric layer 10 can be measured, for example, by cavity resonator perturbation.
The dielectric layer 10 may be a single layer, or may be a laminate consisting of a plurality of layers. When the dielectric layer 10 is a laminate consisting of a plurality of layers, the relative permittivity of the dielectric layer 10 can be determined by measuring the respective layers for the relative permittivity, multiplying the obtained relative permittivity values of the respective layers by the proportions of the thicknesses of the respective layers to the thickness of the whole dielectric layer 10, and adding the resultant values.
The material of the dielectric layer 10 is not limited to a particular one, but the dielectric layer 10 is made of, for example, a polymeric material. Examples of the polymeric material of the dielectric layer 10 include synthetic resins (including thermoplastic elastomers) such as acrylic resin, ethylene-vinyl acetate copolymer (EVA), polyvinyl chloride, polyurethane, acrylic urethane resin, polyolefin, polypropylene, polyethylene, silicone resin, polyethylene terephthalate, polyester, polystyrene, polyimide, polycarbonate, polyamide, polysulfone, polyethersulfone, and epoxy resin and synthetic rubbers such as polyisoprene rubber, polystyrene-butadiene rubber, polybutadiene rubber, chloroprene rubber, acrylonitrile-butadiene rubber, butyl rubber, acrylic rubber, ethylene propylene rubber, and silicone rubber. One of these is used alone as the polymeric material of the dielectric layer 10, or a combination of two or more thereof is used as the polymeric material of the dielectric layer 10.
The dielectric layer 10 may be a foam in some cases. This makes it likely that the dielectric layer 10 has a low relative permittivity. Moreover, this can make the dielectric layer 10 lighter. Examples of the foam include olefin foams and polyester foams.
The thickness of the dielectric layer 10 is, for example, 50 to 2000 μm and desirably 100 to 1000 μm. This makes it easy to achieve both high dimensional accuracy and low cost.
The electrical conductive layer 30 reflects an electromagnetic wave to be absorbed by the electromagnetic wave absorber 1 in the vicinity of the rear surface of the electromagnetic wave absorber. The electrical conductive layer 30 has a sheet resistance of, for example, 0.001 to 30Ω/□. This makes it easy for the electromagnetic wave absorber 1 to exhibit desired electromagnetic wave absorption properties. For example, the electromagnetic wave absorber 1 can effectively attenuate an electromagnetic wave having a frequency of 50 to 100 GHz, particularly 60 to 90 GHz, employed by a millimeter-wave radar.
The material of the electrical conductive layer 30 is, for example, (i) a metal such as aluminum, copper, nickel, chromium, or molybdenum, (ii) an alloy of any of these metals, or (iii) ITO. When the material of the electrical conductive layer 30 is ITO, an ITO containing 5 to 15 weight % of tin oxide can be used.
As shown in
A certain coating may be provided on a principal surface which is of either the resistive layer 20 or electrical conductive layer 30 and faces the dielectric layer 10. This can prevent the component included in the dielectric layer 10 from spreading to the resistive layer 20 or electrical conductive layer 30 and affecting the properties of the resistive layer 20 or electrical conductive layer 30. Examples of the material of such a coating include silicon oxide such as SiO2, silicon nitride, aluminum oxide such as Al2O3, aluminum nitride (AlN), niobium oxide such as Nb2O5, strontium titanate (STO), and aluminum zinc oxide (AZO). In particular, when the material of the coating is AlN or AZO, the durability of the resistive layer 20 or electrical conductive layer 30 can be advantageously enhanced.
As shown in
The adhesive layer 40 includes, for example, a pressure sensitive adhesive such as an acrylic adhesive, a rubber adhesive, a silicone adhesive, or an urethane adhesive.
As shown in
An example of a method for producing the electromagnetic wave absorber 1 will be described. The resistive layer 20 is formed on the polymer film 25 by a film formation method such as sputtering. In addition, a laminate in which the electrical conductive layer 30 is formed on the polymer film 35 is prepared.
Next, a resin composition molded to have a predetermined thickness and forming the dielectric layer 10 is put on the electrical conductive layer 30. After that, one principal surface of the resistive layer 20 is placed on the resin composition forming the dielectric layer 10. The resin composition is cured if necessary. The electromagnetic wave absorber 1 can be produced in this manner. According to this method, the thickness of the dielectric layer 10 is controlled easily, and thus the electromagnetic wave absorber 1 can be produced so that the electromagnetic wave absorber 1 can effectively absorb an electromagnetic wave having a wavelength to be absorbed. Moreover, since the resistive layer 20 and electrical conductive layer 30 are formed separately, the time required to produce the electromagnetic wave absorber 1 is short and the production cost of the electromagnetic wave absorber 1 is low. An adhesive or a pressure sensitive adhesive may be used to adhere the dielectric layer 10 and electrical conductive layer 30 or resistive layer 20.
Hereinafter, the present invention will be described in more detail by examples. The present invention is not limited to the examples given below. First, methods for measuring the properties of resistive layers according to Examples and Comparative Examples and a method for evaluating samples according to Examples and Comparative Examples will be described.
[X-Ray Diffraction]
In Examples and Comparative Examples, the thickness was measured for the resistive layers by X-ray reflectivity using an X-ray diffractometer (manufactured by Rigaku Corporation, product name: RINT2200). X-ray diffraction patterns of the resistive layers were also obtained using the X-ray diffractometer. CuKα radiation was used as the X-ray. Whether the resistive layers have a polycrystalline structure or an amorphous structure was confirmed from the obtained X-ray diffraction patterns. The results are shown in Table 1.
[Sheet Resistance]
The sheet resistance of the resistive layers according to Examples and Comparative Examples not having undergone a chemical immersion treatment was measured by an eddy current method according to Japanese Industrial Standards (JIS) Z 2316 using a non-contact resistance measurement apparatus (manufactured by NAPSON CORPORATION, product name: NC-80MAP). The results are shown in Table 1. Additionally, the resistive layers having undergone a chemical immersion treatment were also measured for the sheet resistance.
[Specific Resistance]
In each of Examples and Comparative Examples, the specific resistance of the resistive layer was determined by calculating a product of the thickness measured as above for the resistive layer and the sheet resistance measured as above for the resistive layer not having undergone a chemical immersion treatment. The results are shown in Table 1.
[Relative Permittivity]
The relative permittivity of the dielectric layer according to Example 1 at 10 GHz was measured by cavity resonator perturbation using a network analyzer (manufactured by Agilent Technologies, Inc., product name: N5230C) and cavity resonator (Cavity Resonator CP-531, manufactured by Kanto Electronics Application Development Inc.).
[Electromagnetic Wave Absorption Properties]
The return loss (absolute value of the amount of reflection) was measured according to JIS R 1679:2007 using a 76-GHz millimeter wave perpendicularly incident on respective surfaces of samples A (not having undergone a chemical immersion treatment) and B (having undergone a chemical immersion treatment) according to each of Examples and Comparative Examples. The results are shown in Table 1. Moreover, comprehensive evaluation was performed for Examples and Comparative Examples according to the following measures. The results are shown in Table 1.
a: Both the sample A and sample B have a return loss of 20 dB or more.
b: Either the sample A or sample B or both the sample A and sample B have a return loss of 10 dB or more and less than 20 dB.
x: Either the sample A or sample B or both the sample A and sample B have a return loss of less than 10 dB.
A film made of amorphous In2O3 was formed on a 38-μm-thick PET film (DIAFOIL manufactured by Mitsubishi Chemical Corporation) by a DC magnetron sputtering method using a target material made of In2O3. The film was subjected to a heat treatment in air at a temperature of 150° C. for 3 hours to crystallize the In2O3. A resistive layer according to Example 1 was formed in this manner. The thickness, sheet resistance, and specific resistance of the resistive layer according to Example 1 are shown in Table 1. A dielectric layer according to Example 1 was produced by press-molding an acrylic resin having a relative permittivity of 2.6 to have a thickness of 560 μm. As an electrical conductive layer according to Example 1, an aluminum foil having a sheet resistance of 0.002Ω/□ was prepared. The resistive layer according to Example 1 not having undergone a chemical immersion treatment was adhered to one principal surface of the dielectric layer according to Example 1 so that the resistive layer according to Example 1 was in contact with the principal surface. Additionally, the electrical conductive layer according to Example 1 was brought into contact with and adhered to the other principal surface of the dielectric layer according to Example 1. A sample A according to Example 1 was produced in this manner.
A resistive layer as formed above in Example 1 was formed on a PET film as used above. A chemical immersion treatment was performed in which the PET film having the resistive layer formed thereon was immersed in a 5 weight % aqueous solution of NaOH for 5 minutes, followed by air drying to produce a resistive layer having undergone the chemical immersion treatment. The temperature of the aqueous NaOH solution used in the chemical immersion treatment was at 40° C. A sample B according to Example 1 was prepared in the same manner as for the sample A, except that the resistive layer having undergone the chemical immersion treatment was used instead of the resistive layer according to Example 1 not having undergone the chemical immersion treatment.
Resistive layers according to Examples 2 and 3 made of In2O3 were formed in the same manner as in Example 1, except that the sputtering conditions were changed so that the thickness of the resistive layers and the sheet resistance of the resistive layers would be as shown in Table 1. In the formation of the resistive layers according to Examples 2 and 3, the film made of amorphous In2O3 and obtained by the sputtering was crystallized by a heat treatment performed under the same conditions as in Example 1. Samples A (not having undergone the chemical immersion treatment) and samples B (having undergone the chemical immersion treatment) according to Examples 2 and 3 were produced in the same manner as in Example 1, except that the resistive layer according to Example 2 or 3 was used instead of the resistive layer according to Example 1.
A resistive layer according to Example 4 made of an ITO including 2.5 weight % of tin oxide was formed in the same manner as in Example 1, except that ITO was used as a target material and the sputtering conditions were changed so that the thickness of the resistive layer and the sheet resistance of the resistive layer would be as shown in Table 1. In the formation of the resistive layer according to Example 4, the amorphous ITO film obtained by the sputtering was crystallized by a heat treatment performed under the same conditions as in Example 1. A sample A (not having undergone the chemical immersion treatment) and sample B (having undergone the chemical immersion treatment) according to Example 4 were produced in the same manner as in Example 1, except that the resistive layer according to Example 4 was used instead of the resistive layer according to Example 1.
A resistive layer according to Example 5 made of an ITO including 3.3 weight % of tin oxide was formed in the same manner as in Example 1, except that ITO was used as a target material and the sputtering conditions were changed so that the thickness of the resistive layer and the sheet resistance of the resistive layer would be as shown in Table 1. In the formation of the resistive layer according to Example 5, the amorphous ITO film obtained by the sputtering was crystallized by a heat treatment performed under the same conditions as in Example 1. A sample A (not having undergone the chemical immersion treatment) and sample B (having undergone the chemical immersion treatment) according to Example 5 were produced in the same manner as in Example 1, except that the resistive layer according to Example 5 was used instead of the resistive layer according to Example 1.
A resistive layer according to Example 6 made of a material including 7.5 weight % of SnO2 and 2.5 weight % of SiO2 in addition to In2O3 was formed in the same manner as in Example 1, except that a target material including In2O3, SnO2, and SiO2 was used and the sputtering conditions were changed so that the thickness of the resistive layer and the sheet resistance of the resistive layer would be as shown in Table 1. In the formation of the resistive layer according to Example 6, the amorphous film obtained by the sputtering was crystallized by a heat treatment performed under the same conditions as in Example 1. A sample A (not having undergone the chemical immersion treatment) and sample B (having undergone the chemical immersion treatment) according to Example 6 were produced in the same manner as in Example 1, except that the resistive layer according to Example 6 was used instead of the resistive layer according to Example 1.
A resistive layer according to Example 7 made of a material including 7.5 weight % of SnO2 and 2.5 weight % of MgO in addition to In2O3 was formed in the same manner as in Example 1, except that a target material including In2O3, SnO2, and MgO was used and the sputtering conditions were changed so that the thickness of the resistive layer and the sheet resistance of the resistive layer would be as shown in Table 1. In the formation of the resistive layer according to Example 7, the amorphous film obtained by the sputtering was crystallized by a heat treatment performed under the same conditions as in Example 1. A sample A (not having undergone the chemical immersion treatment) and sample B (having undergone the chemical immersion treatment) according to Example 7 were produced in the same manner as in Example 1, except that the resistive layer according to Example 7 was used instead of the resistive layer according to Example 1.
A resistive layer according to Example 8 made of a material including 7.5 weight % of SnO2 and 2.5 weight % of TiO2 in addition to In2O3 was formed in the same manner as in Example 1, except that a target material including In2O3, SnO2, and TiO2 was used and the sputtering conditions were changed so that the thickness of the resistive layer and the sheet resistance of the resistive layer would be as shown in Table 1. In the formation of the resistive layer according to Example 8, the amorphous film obtained by the sputtering was crystallized by a heat treatment performed under the same conditions as in Example 1. A sample A (not having undergone the chemical immersion treatment) and sample B (having undergone the chemical immersion treatment) according to Example 8 were produced in the same manner as in Example 1, except that the resistive layer according to Example 8 was used instead of the resistive layer according to Example 1.
A resistive layer according to Example 9 made of a material including 7.5 weight % of SnO2 and 3 atomic % of nitrogen in addition to In2O3 was formed in the same manner as in Example 1, except that a target material including In2O3 and SnO2 and a reactive gas including nitrogen gas were used and the sputtering conditions were changed so that the thickness of the resistive layer and the sheet resistance of the resistive layer would be as shown in Table 1. In the formation of the resistive layer according to Example 9, the amorphous film obtained by the sputtering was crystallized by a heat treatment performed under the same conditions as in Example 1. A sample A (not having undergone the chemical immersion treatment) and sample B (having undergone the chemical immersion treatment) according to Example 9 were produced in the same manner as in Example 1, except that the resistive layer according to Example 9 was used instead of the resistive layer according to Example 1.
A resistive layer according to Example 10 made of a material including 10 weight % of SnO2 and 5 weight % of SiO2 in addition to In2O3 was formed in the same manner as in Example 1, except that a target material including In2O3, SnO2, and SiO2 was used and the sputtering conditions were changed so that the thickness of the resistive layer and the sheet resistance of the resistive layer would be as shown in Table 1. In the formation of the resistive layer according to Example 10, the amorphous film obtained by the sputtering was crystallized by a heat treatment performed under the same conditions as in Example 1. A sample A (not having undergone the chemical immersion treatment) and sample B (having undergone the chemical immersion treatment) according to Example 10 were produced in the same manner as in Example 1, except that the resistive layer according to Example 10 was used instead of the resistive layer according to Example 1.
A film made of amorphous ITO including 10 weight % of tin oxide was formed on a 38-μm-thick PET film (DIAFOIL manufactured by Mitsubishi Chemical Corporation) by a DC magnetron sputtering method. The film was crystallized by a heat treatment in air at a temperature of 150° C. for 3 hours. An electrical conductive layer according to Example 11 was formed in this manner. The thickness of the electrical conductive layer according to Example 11 was 120 nm. The sheet resistance of the electrical conductive layer according to Example 11 was 20Ω/□. A sample A (not having undergone the chemical immersion treatment) and sample B (having undergone the chemical immersion treatment) according to Example 11 were produced in the same manner as in Example 1, except that the electrical conductive layer according to Example 11 was used instead of the electrical conductive layer according to Example 1.
A resistive layer according to Comparative Example 1 made of a polycrystalline-structured material including ZnO as a main component and 3 weight % of Ga2O3 was formed on a 38-μm-thick PET film (DIAFOIL manufactured by Mitsubishi Chemical Corporation) using a target material including ZnO and Ga2O3 by a DC magnetron sputtering method, in which the sputtering conditions were adjusted so that the thickness of the resistive layer and sheet resistance of the resistive layer would be as shown in Table 1. In the formation of the resistive layer according to Comparative Example 1, no heat treatment was performed after the sputtering. A sample A (not having undergone the chemical immersion treatment) and sample B (having undergone the chemical immersion treatment) according to Comparative Example 1 were produced in the same manner as in Example 1, except that the resistive layer according to Comparative Example 1 was used instead of the resistive layer according to Example 1.
A resistive layer according to Comparative Example 2 made of an amorphous ITO including 10 weight % of tin oxide was formed on a 38-μm-thick PET film (DIAFOIL manufactured by Mitsubishi Chemical Corporation) using ITO as a target material by a DC magnetron sputtering method, in which the sputtering conditions were adjusted so that the thickness and sheet resistance of the resistive layer would be as shown in Table 1. A sample A (not having undergone the chemical immersion treatment) and sample B (having undergone the chemical immersion treatment) according to Comparative Example 2 were produced in the same manner as in Example 1, except that the resistive layer according to Comparative Example 2 was used instead of the resistive layer according to Example 1.
A resistive layer according to Comparative Example 3 made of an amorphous ITO including 7.5 weight % of tin oxide was formed in the same manner as in Comparative Example 2, except that ITO was used as a target material and the sputtering conditions were changed so that the thickness of the resistive layer and the sheet resistance of the resistive layer would be as shown in Table 1. A sample A (not having undergone the chemical immersion treatment) and sample B (having undergone the chemical immersion treatment) according to Comparative Example 3 were produced in the same manner as in Example 1, except that the resistive layer according to Comparative Example 3 was used instead of the resistive layer according to Example 1.
A resistive layer according to Comparative Example 4 made of an ITO including 2.5 weight % of tin oxide was formed in the same manner as in Example 1, except that ITO was used as a target material and the sputtering conditions were changed so that the thickness of the resistive layer and the sheet resistance of the resistive layer would be as shown in Table 1. In the formation of the resistive layer according to Comparative Example 4, the amorphous ITO film obtained by the sputtering was crystallized by a heat treatment performed under the same conditions as in Example 1. A sample A (not having undergone the chemical immersion treatment) and sample B (having undergone the chemical immersion treatment) according to Comparative Example 4 were produced in the same manner as in Example 1, except that the resistive layer according to Comparative Example 4 was used instead of the resistive layer according to Example 1.
A resistive layer according to Comparative Example 5 made of an ITO including 2.5 weight % of tin oxide was formed in the same manner as in Example 1, except that ITO was used as a target material and the sputtering conditions were changed so that the thickness of the resistive layer and the sheet resistance of the resistive layer would be as shown in Table 1. In the formation of the resistive layer according to Comparative Example 5, the amorphous ITO film obtained by the sputtering was crystallized by a heat treatment performed under the same conditions as in Example 1. A sample A (not having undergone the chemical immersion treatment) and sample B (having undergone the chemical immersion treatment) according to Comparative Example 5 were produced in the same manner as in Example 1, except that the resistive layer according to Comparative Example 5 was used instead of the resistive layer according to Example 1.
A resistive layer according to Comparative Example 6 made of an ITO including 7.5 weight % of tin oxide was formed in the same manner as in Example 1, except that ITO was used as a target material and the sputtering conditions were changed so that the thickness of the resistive layer and the sheet resistance of the resistive layer would be as shown in Table 1. In the formation of the resistive layer according to Comparative Example 6, the amorphous ITO film obtained by the sputtering was crystallized by a heat treatment performed under the same conditions as in Example 1. A sample A (not having undergone the chemical immersion treatment) and sample B (having undergone the chemical immersion treatment) according to Comparative Example 6 were produced in the same manner as in Example 1, except that the resistive layer according to Comparative Example 6 was used instead of the resistive layer according to Example 1.
A resistive layer according to Comparative Example 7 made of a polycrystalline-structured material including ZnO as a main component and 3 weight % of Al2O3 was formed in the same manner as in Comparative Example 1, except that a target material including ZnO and Al2O3 was used and the sputtering conditions were changed so that the thickness of the resistive layer and the sheet resistance of the resistive layer would be as shown in Table 1. In the formation of the resistive layer according to Comparative Example 7, no heat treatment was performed after the sputtering. A sample A (not having undergone the chemical immersion treatment) and sample B (having undergone the chemical immersion treatment) according to Comparative Example 7 were produced in the same manner as in Example 1, except that the resistive layer according to Comparative Example 7 was used instead of the resistive layer according to Example 1.
As shown in Table 1, it is suggested that good chemical resistance can be exhibited when the resistive layer has a polycrystalline structure, includes indium oxide as a main component, and has a sheet resistance of 260 to 500Ω/□ and a specific resistance of 5×10−4 Ω·cm or more.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2017-116299 | Jun 2017 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2018/012604 | 3/27/2018 | WO | 00 |
