The disclosure relates to a material that can suppress electromagnetic interference, and in particular, relates to an electromagnetic wave absorber.
With the continuous development of communication technology, designing an electronic component module to be equipped with characteristics such as high density, thinness, ultra-high frequency, and multi-functions, has become a trend. However, the distances among the electronic components in the abovementioned electronic component module may thereby decrease, so strong electromagnetic interference (EMI) may be generated among the components.
Currently, solutions to the above electromagnetic interference problem include coating of a metal layer on the outer surface of the electronic component module to reflect the electromagnetic waves, so as to achieve the effect of electromagnetic interference suppression. However, this solution still cannot reduce the radiated electromagnetic interference generated inside the electronic component module nor the high-order harmonics generated due to the resonance effect.
Regarding the abovementioned radiated electromagnetic interference and the high-order harmonics generated due to the resonance effect, at present, in order to reduce the phenomenon of electromagnetic interference, a specific magnetic material is formed in the electronic component module for absorption. However, the electromagnetic waves that the currently-available magnetic materials can absorb are of low frequency (<50 GHz), so it is difficult for the currently-available magnetic materials to be applied to the next-generation communication systems (sixth-generation communication systems).
The disclosure provides an electromagnetic wave absorber capable of reducing the phenomenon of electromagnetic interference.
An embodiment of the disclosure provides an electromagnetic wave absorber including a substrate and a plurality of magnetic material bodies. The plurality of magnetic material bodies are disposed on the substrate in an array, so that the electromagnetic wave absorber has a plurality of electromagnetic wave absorption frequencies in addition to an electromagnetic wave characteristic frequency of the plurality of magnetic material bodies. A ratio of one of the plurality of electromagnetic wave absorption frequencies to the electromagnetic wave characteristic frequency is greater than 1 and less than or equal to 6.
Based on the above, the electromagnetic wave absorber provided by the disclosure can absorb electromagnetic waves in at least two frequency bands. In detail, first the electromagnetic wave absorber provided by the disclosure can absorb electromagnetic waves with the same or similar frequency as the electromagnetic wave characteristic frequency of the magnetic material bodies. Further, the plurality of magnetic material bodies are disposed on the substrate in an array in the disclosure, so that a surface lattice resonance effect occurs between adjacent magnetic material bodies. As such, the electromagnetic wave absorber provided by the disclosure can have multiple electromagnetic wave absorption frequencies in addition to the abovementioned electromagnetic wave characteristic frequency, and therefore, can absorb high-frequency electromagnetic waves in other frequency bands (the frequencies of which are greater than the electromagnetic wave characteristic frequency of the magnetic material bodies). Based on the above, the electromagnetic wave absorber of the disclosure can be used in the next-generation communication systems to reduce the phenomenon of electromagnetic interference generated in the systems.
The disclosure may be understood by referring to the following detailed description with reference to the accompanying drawings. It is noted that for comprehension of the reader and simplicity of the drawings, in the drawings provided in the disclosure, only a part of the electronic device is shown, and certain devices in the drawings are not necessarily drawn to actual scale. Moreover, the quantity and the size of each device in the drawings are only schematic and exemplary and are not intended to limit the scope of protection provided in the disclosure.
Directional terminologies mentioned in the disclosure, such as “top”, “bottom”, “front”, “back”, “left”, “right”, and so forth, refer to directions in the reference accompanying drawings. Accordingly, the directional terminologies provided herein serve to describe rather than limiting the disclosure. In the accompanying drawings, each figure illustrates methods applied in particular embodiments and general features of structures and/or materials in the embodiments. However, these figures should not be construed or defined as the scope covered by the particular embodiments. For instance, relative dimensions, thicknesses, and positions of various layers, regions, and/or structures may be reduced or enlarged for clarity.
The terminologies “about”, “equal to”, “equivalent to” or “same”, “substantially” or “approximately” are generally interpreted as being within 10% of a given value or range, or interpreted as being within 5%, 3%, 2%, 1%, or 0.5% of a given value or range.
It should be understood that the following embodiments may replace, reorganize, and mix the features in several different embodiments to complete other embodiments without departing from the spirit of the disclosure. As long as the features of the embodiments do not violate the spirit of the disclosure or conflict each other, they may be mixed and matched as desired.
Reference will now be made in detail to the exemplary embodiments of the disclosure, and the same reference numbers are used in the drawings and descriptions to indicate the same or similar parts.
With reference to
The substrate SB1 may be used to carry, for example, the plurality of magnetic material bodies M1. In some embodiments, a material of the substrate SB1 may include resin, but the disclosure is not limited thereto. In other embodiments, the material of the substrate SB1 and a material of the magnetic material bodies M1 are the same as each other. In still other embodiments, the material of the substrate SB1 may include a conductive material. In addition, in some embodiments, the substrate SB1 may include a single-layer structure or a multi-layer structure. In this embodiment, the substrate SB1 is a single-layer structure, but the disclosure is not limited thereto.
In some embodiments, a thickness h of the substrate SB1 is 0.05 mm to 50 mm or 0.1 mm to 5 mm. For example, the thickness h of the substrate SB1 may be 0.4 mm to 0.8 mm, but the disclosure is not limited thereto.
In some embodiments, the substrate SB1 has a dielectric coefficient of 1 to 50. For instance, the dielectric coefficient of the substrate SB1 may be 2 to 5, but the disclosure is not limited thereto.
The plurality of magnetic material bodies M1 are disposed on the substrate SB1, for example, and can effectively absorb incident electromagnetic waves. In detail, a characteristic frequency of the plurality of magnetic material bodies M1 can match frequencies of electromagnetic waves to be absorbed, so that the electromagnetic waves incident on the plurality of magnetic material bodies M1 can be attenuated or eliminated through the resonance absorption phenomenon. In this embodiment, the plurality of magnetic material bodies M1 are arranged in an array on the substrate SB1. Through the above design, the adjacent magnetic material bodies M1 may generate a surface lattice resonance effect between each other, so that a characteristic frequency greater than the plurality of magnetic material bodies M1 themselves can be absorbed.
In general, by arranging the plurality of magnetic material bodies M1 on the substrate SB1 in an array, the electromagnetic wave absorber 10 of this embodiment can absorb electromagnetic waves in at least two frequency bands. In other words, in addition to the electromagnetic wave characteristic frequency of the plurality of magnetic material bodies M1, a plurality of electromagnetic wave absorption frequencies in addition to the electromagnetic wave characteristic frequency are further added and included in the electromagnetic wave absorber 10 of this disclosure, so that the electromagnetic wave absorber 10 of this disclosure may be applied to absorb electromagnetic wave frequency bands of higher frequencies.
In some embodiments, the electromagnetic wave characteristic frequency of the plurality of magnetic material bodies M1 is 0.1 MHz to 1 THz. For instance, the electromagnetic wave characteristic frequency of the plurality of magnetic material bodies M1 may be 0.5 GHz, 50 GHz, 150 GHz, or 250 GHz, but the disclosure is not limited thereto.
In some embodiments, the material of the plurality of magnetic material bodies M1 includes a magnetic element oxide. The magnetic element may be iron (Fe), cobalt (Co), nickel (Ni), manganese (Mn), chromium (Cr), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), or a combination of the above elements. For instance, the material of the plurality of magnetic material bodies M1 may be an iron oxide, a cobalt oxide, or a cobalt iron oxide, but the disclosure is not limited thereto. In some other embodiments, the material of the plurality of magnetic material bodies M1 may include a magnetic element oxide doped with other elements, which may be represented by the following formula, for example: MxFe3-x oxide, where M is an element doped into a magnetic element oxide (e.g., iron oxide), the oxidation number of M may be +1, +2, +3, +4, +5, or +6, and x may be greater than or equal to 0 and less than 1 and may be, for example, 0.1, 0.15, 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, 0.5, 0.55, 0.6, 0.65, 0.7, 0.75, 0.8, 0.85, 0.9, or 0.95.
In some embodiments, the element doped into the iron oxide may be independently selected from at least one of the group consisting of molybdenum (Mo), zirconium (Zr), magnesium (Mg), calcium (Ca), yttrium (Y), titanium (Ti), and silver (Ag), aluminum (Al), barium (Ba), gallium (Ga), rhodium (Rh), nickel (Ni), iron (Fe), cobalt (Co), nickel (Ni), manganese (Mn), chromium (Cr), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), and lanthanide elements. In this embodiment, the element doped into the iron oxide includes barium (Ba), but the disclosure is not limited thereto. Based on the above, by doping an appropriate element into the iron oxide, the characteristic frequency of the plurality of magnetic material bodies M1 may be changed for absorbing electromagnetic waves with different frequencies.
In some embodiments, a shape of each magnetic material body M1 may include a polygonal prism shape, a cylindrical prism shape, a polygonal cone shape, a conical shape, or a combination thereof. Herein, polygonal shapes of the polygonal prism shape and the polygonal cone shape may include a trigonal shape, a quadrilateral shape, a hexagonal shape, an octagonal shape, or a dodecagonal shape. In this embodiment, as shown in
In some embodiments, a thickness mh of one of the magnetic material bodies M1 is 0.01 mm to 50 mm. For instance, the thickness mh of one of the plurality of magnetic material bodies M1 may be 0.05 mm to 0.5 mm, but the disclosure is not limited thereto.
In some embodiments, a dielectric coefficient of one of the magnetic material bodies M1 is 1 to 50. For instance, the dielectric coefficient of one of the plurality of magnetic material bodies M1 may be 2 to 20, but the disclosure is not limited thereto.
In some embodiments, one of the plurality of magnetic material bodies M1 has a width a in a normal direction n of the substrate SB. The width a of each magnetic material body M1 conforms to, for example, the following relational expression 1:
Taking the embodiment shown in
In some embodiments, a pitch p is provided between adjacent magnetic material bodies M1. The pitch p between adjacent magnetic material bodies M1 conforms to, for example, the following relational expression 2:
Based on the above, by allowing the electromagnetic wave absorber 10 of this embodiment to have the above design, the electromagnetic wave absorber 10 may have multiple electromagnetic wave absorption frequency bands and electromagnetic wave absorption frequency bands of higher frequencies, so that high frequency electromagnetic waves may be effectively absorbed. The electromagnetic wave absorber 10 of this embodiment may therefore be applied more widely, that is, may be applied to the next generation communication systems.
It is worth noting that the electromagnetic wave characteristic frequency and an electromagnetic wave absorption rate of the electromagnetic wave absorber 10 may be known by conducting the following experimental examples to evaluate the performance of the electromagnetic wave absorber 10 in the electromagnetic wave absorption spectrum, and description thereof is not provided herein.
With reference to
The radome 100 may be used to, for example, protect each component in the antenna module 1 from environmental influences. The electromagnetic wave absorber 10 may be disposed on, for example, the radome 100, for example, to reduce electromagnetic wave interference generated among various components (e.g., the antenna component 200 and the electronic components 300). The antenna component 200 and the plurality of electronic components 300 may be electrically connected to each other through, for example, the redistribution structure 400.
With reference to
In detail, in this embodiment, the substrate SB2 includes a first substrate SB21 and a second substrate SB22 stacked on each other, and the plurality of magnetic material bodies M1 are disposed on the second substrate SB22. In other words, the plurality of magnetic material bodies M1 and the first substrate SB21 are disposed on two opposite surfaces of the second substrate SB22, for example.
In this embodiment, a material of the first substrate SB21 includes a conductive material. For instance, the material of the first substrate SB21 may include copper or aluminum, but the disclosure is not limited thereto. In this embodiment, a material of the second substrate SB22 includes resin, which may be the same as or similar to the material of the substrate SB1 in the above embodiment, so description thereof is not repeatedly provided herein.
With reference to
In detail, in this embodiment, each magnetic material body M2 has a bottom surface S1 and a top surface S2 in the normal direction n of the substrate SB1. Herein, the bottom surface S1 has a width a1 that is greater than or equal to a width a2 of the top surface S2, so that a ratio of a cross-sectional area of the bottom surface S1 of the magnetic material body M2 to a cross-sectional area of the top surface S2 is ≥1. In some embodiments, a ratio of an area of the bottom surface S1 to an area of the top surface S2 (i.e., a ratio of a square of the width a1 to a square of the width a2) is 1 to 4.
With reference to
In detail, in this embodiment, the substrate SB3 includes a first substrate SB31, a second substrate SB32, and a third substrate SB33 stacked on one another, and the plurality of magnetic material bodies M1 are disposed on the third substrate SB33.
In this embodiment, a material of the first substrate SB31 includes a conductive material. For instance, the material of the first substrate SB31 may include copper or aluminum, but the disclosure is not limited thereto. In this embodiment, a material of the second substrate SB32 includes resin, which may be the same as or similar to the material of the substrate SB1 in the above embodiment, so description thereof is not repeatedly provided herein. In this embodiment, a material of the third substrate SB33 and the material of the magnetic material bodies M1 are the same.
With reference to
In detail, in this embodiment, the substrate SB4 includes a first substrate SB41 and a second substrate SB42 stacked on each other, and the plurality of magnetic material bodies M1 are disposed on the second substrate SB42.
In this embodiment, a material of the first substrate SB41 includes a conductive material. For instance, the material of the first substrate SB41 may include copper or aluminum, but the disclosure is not limited thereto. In this embodiment, a material of the second substrate SB42 and the material of the magnetic material bodies M1 are the same.
The following experimental examples are used to illustrate the disclosure. But these experimental examples are provided for description only and are presented as examples and are not intended to be used to limit the scope of the disclosure.
In this experimental example, a terahertz time domain spectrometer (THz-TDS) is used to measure the electromagnetic wave absorption rate at each frequency of the electromagnetic wave absorber in the following examples.
In Example 1, the structure of the electromagnetic wave absorber 10 shown in
(1) The electromagnetic wave characteristic frequency of the magnetic material bodies M1 is 50 GHz (twice the electromagnetic wave characteristic frequency is 100 GHz). (2) The dielectric coefficient of each magnetic material body M1 is 4. (3) The dielectric coefficient of the substrate SB1 is 4.4. (4) The magnetic permeability coefficient of the substrate SB1 is 1. (5) fp in the relational expression 1 used to express the width of each magnetic material body M1 is 0.125. (6) sp in the relational expression 2 used to express the pitch p between adjacent magnetic material bodies M1 is 0.5. (7) The thickness h of the substrate SB1 is 0.4 mm. (8) The thickness mh of each magnetic material body M1 is 0.4 mm.
In Example 2, the structure of the electromagnetic wave absorber 10 shown in
In Example 3, the structure of the electromagnetic wave absorber 10 shown in
With the use of a terahertz time domain spectrometer, electromagnetic waves with different frequencies are incident on the electromagnetic wave absorber 10 of Example 1 to Example 3, so as to measure their electromagnetic wave absorption rates at each frequency, and the absorption spectrum graphs shown in
With reference to
With reference to
With reference to
It can be known from the absorption spectrum graphs of the electromagnetic wave absorber 10 of the above Example 1 to Example 3 that in addition to the electromagnetic wave characteristic frequency of the plurality of magnetic material bodies M1, the electromagnetic wave absorber 10 is also added with a plurality of electromagnetic wave absorption frequencies due to the surface lattice resonance effect. Therefore, the electromagnetic wave absorber 10 of Example 1 to Example 3 may have electromagnetic wave characteristic absorption peaks in multiple frequency bands.
Further, it can also be known from the above absorption spectrum graphs of the electromagnetic wave absorber 10 of Example 1 to Example 3 that the electromagnetic wave absorption rate of the first electromagnetic wave characteristic absorption peak (F/Fm=50 GHZ) decreases as sp in the relational expression 2 increases (i.e., the pitch p between adjacent magnetic material bodies M1 increases).
In Example 4, the structure of the electromagnetic wave absorber 10 shown in FIG. 1A and
In Example 5, the structure of the electromagnetic wave absorber 10 shown in
In Example 6, the structure of the electromagnetic wave absorber 10 shown in
With the use of a terahertz time domain spectrometer, electromagnetic waves with different frequencies are incident on the electromagnetic wave absorber 10 of Example 4 to Example 6, so as to measure their electromagnetic wave absorption rates at each frequency, and the absorption spectrum graphs shown in
With reference to
With reference to
With reference to
It can be known from the absorption spectrum graphs of the electromagnetic wave absorber 10 of the above Example 4 to Example 6 that in addition to the electromagnetic wave characteristic frequency of the plurality of magnetic material bodies M1, the electromagnetic wave absorber 10 is also added with a plurality of electromagnetic wave absorption frequencies due to the surface lattice resonance effect. Therefore, the electromagnetic wave absorber 10 of Example 4 to Example 6 may have electromagnetic wave characteristic absorption peaks in multiple frequency bands.
Further, it can also be known from the above absorption spectrum graphs of the electromagnetic wave absorber 10 of Example 4 to Example 6 that the electromagnetic wave absorption rate of the first electromagnetic wave characteristic absorption peak (F/Fm=50 GHZ) increases as the thickness mh of each magnetic material body M1 increases. Further, when the thickness mh increases from 0.1 mm to 0.5 mm, the electromagnetic wave absorption peak with the strongest absorption intensity shifts to low frequency.
In Example 7, the structure of the electromagnetic wave absorber 20 shown in
(1) The electromagnetic wave characteristic frequency of the magnetic material bodies M1 is 50 GHz (twice the electromagnetic wave characteristic frequency is 100 GHz). (2) The dielectric coefficient of each magnetic material body M1 is 4. (3) The dielectric coefficient of the substrate SB2 is 4.1. (4) The magnetic permeability coefficient of the substrate SB2 is 1. (5) fp in the relational expression 1 used to express the width of each magnetic material body M1 is 0.05. (6) sp in the relational expression 2 used to express the pitch p between adjacent magnetic material bodies M1 is 1. (7) The thickness h of the substrate SB2 is 0.4 mm. (8) The thickness mh of each magnetic material body M1 is 0.5 mm.
In Example 8, the structure of the electromagnetic wave absorber 20 shown in
In Example 9, the structure of the electromagnetic wave absorber 20 shown in
With the use of a terahertz time domain spectrometer, electromagnetic waves with different frequencies are incident on the electromagnetic wave absorber 20 of Example 7 to Example 9, so as to measure their electromagnetic wave absorption rates at each frequency, and the absorption spectrum graphs shown in
With reference to
With reference to
With reference to
It can be known from the absorption spectrum graphs of the electromagnetic wave absorber 20 of the above Example 7 to Example 9 that in addition to the electromagnetic wave characteristic frequency of the plurality of magnetic material bodies M1, the electromagnetic wave absorber 20 is also added with a plurality of electromagnetic wave absorption frequencies due to the surface lattice resonance effect. Therefore, the electromagnetic wave absorber 20 of Example 7 to Example 9 may have electromagnetic wave characteristic absorption peaks in multiple frequency bands.
Further, it can also be known from the above absorption spectrum graphs of the electromagnetic wave absorber 20 of Example 7 to Example 9 that the electromagnetic wave absorption rate of the first electromagnetic wave characteristic absorption peak (F/Fm=50 GHZ) grows as fp in the relational expression 1 increases (i.e., the width a between magnetic material bodies M1 increases). Further, the absorption rate of F/Fm in the range of 1 to 6 becomes more average as fp in the relational expression 1 increases.
In Example 10, the structure of the electromagnetic wave absorber 20 shown in
In Example 11, the structure of the electromagnetic wave absorber 20 shown in
With the use of a terahertz time domain spectrometer, electromagnetic waves with different frequencies are incident on the electromagnetic wave absorber 20 of Example 10 to Example 11, so as to measure their electromagnetic wave absorption rates at each frequency, and the absorption spectrum graphs shown in
With reference to
With reference to
It can be known from the absorption spectrum graphs of the electromagnetic wave absorber 20 of the above Example 10 to Example 11 that in addition to the electromagnetic wave characteristic frequency of the plurality of magnetic material bodies M1, the electromagnetic wave absorber 20 is also added with a plurality of electromagnetic wave absorption frequencies due to the surface lattice resonance effect. Therefore, the electromagnetic wave absorber 20 of Example 10 to Example 11 may have electromagnetic wave characteristic absorption peaks in multiple frequency bands.
Further, from the above absorption spectrum graphs of the electromagnetic wave absorber 20 of Example 10 to Example 11, it can also be known that when the substrate SB2 has different dielectric coefficients, the electromagnetic wave absorber 20 of Example 10 to Example 11 can still have electromagnetic wave characteristic absorption peaks in multiple frequency bands.
The parameters in Example 12 are the same as those of the electromagnetic wave absorber 20 in Example 10, and the only difference is: the shape of each magnetic material body M1 is a triangular prism.
The parameters in Example 13 are the same as those of the electromagnetic wave absorber 20 in Example 10, and the only difference is: the shape of each magnetic material body M1 is a square prism.
The parameters in Example 14 are the same as those of the electromagnetic wave absorber 20 in Example 10, and the only difference is: the shape of each magnetic material body M1 is an octagonal prism.
The parameters in Example 15 are the same as those of the electromagnetic wave absorber 20 in Example 10, and the only difference is: the shape of each magnetic material body M1 is a cylindrical prism.
With the use of a terahertz time domain spectrometer, electromagnetic waves with different frequencies are incident on the electromagnetic wave absorber 20 of Example 12 to Example 15, so as to measure their electromagnetic wave absorption rates at each frequency, and the absorption spectrum graphs shown in
With reference to
With reference to
With reference to
With reference to
It can be known from the absorption spectrum graphs of the electromagnetic wave absorber 20 of the above Example 12 to Example 15 that in addition to the electromagnetic wave characteristic frequency of the plurality of magnetic material bodies M1, the electromagnetic wave absorber 20 is also added with a plurality of electromagnetic wave absorption frequencies due to the surface lattice resonance effect. Therefore, the electromagnetic wave absorber 20 of Example 12 to Example 15 may have electromagnetic wave characteristic absorption peaks in multiple frequency bands.
Further, from the above absorption spectrum graphs of the electromagnetic wave absorber 20 of Example 12 to Example 15, it can also be known that when the shapes of the magnetic material bodies M1 are different,
In Example 16, the structure of the electromagnetic wave absorber 30 shown in
(1) The electromagnetic wave characteristic frequency of the magnetic material bodies M2 is 50 GHz (twice the electromagnetic wave characteristic frequency is 100 GHz). (2) The dielectric coefficient of each magnetic material body M2 is 4. (3) The dielectric coefficient of the substrate SB2 is 4.4. (4) The magnetic permeability coefficient of the substrate SB2 is 1. (5) fp in the relational expression 1 used to express the width of each magnetic material body M2 is 0.15. (6) sp in the relational expression 2 used to express the pitch p between adjacent magnetic material bodies M2 is 1. (7) The thickness h of the substrate SB2 is 0.4 mm. (8) The thickness mh of each magnetic material body M2 is 0.4 mm. (9) The ratio of the area of the bottom surface S1 to the area of the top surface S2 of each magnetic material body M2 (i.e., the ratio of the square of the width a1 to the square of the width a2) is 1.
In Example 17, the structure of the electromagnetic wave absorber 30 shown in
In Example 18, the structure of the electromagnetic wave absorber 30 shown in
With the use of a terahertz time domain spectrometer, electromagnetic waves with different frequencies are incident on the electromagnetic wave absorber 30 of Example 16 to Example 18, so as to measure their electromagnetic wave absorption rates at each frequency, and the absorption spectrum graphs shown in
With reference to
With reference to
With reference to
It can be known from the absorption spectrum graphs of the electromagnetic wave absorber 30 of the above Example 16 to Example 18 that in addition to the electromagnetic wave characteristic frequency (F) of the plurality of magnetic material bodies M1, the electromagnetic wave absorber 30 is also added with a plurality of electromagnetic wave absorption frequencies due to the surface lattice resonance effect. Therefore, the electromagnetic wave absorber 30 of Example 16 to Example 18 may have electromagnetic wave characteristic absorption peaks in multiple frequency bands.
Further, it can also be known from the above absorption spectrum graphs of the electromagnetic wave absorber 20 of Example 16 to Example 18 that the electromagnetic wave absorption rate of the first electromagnetic wave characteristic absorption peak (F/Fm=50 GHZ) drops as the ratio of the area of the bottom surface S1 to the area of the top surface S2 of each magnetic material body M2 increases. However, the electromagnetic wave absorber 30 of Example 16 to Example 18 may still have electromagnetic wave characteristic absorption peaks in multiple frequency bands.
In Example 19, the structure of the electromagnetic wave absorber 40 shown in
(1) The electromagnetic wave characteristic frequency of the magnetic material bodies M1 is 50 GHz (twice the electromagnetic wave characteristic frequency is 100 GHz). (2) The dielectric coefficient of each magnetic material body M1 is 4. (3) The dielectric coefficient of the substrate SB3 is 4.4. (4) The magnetic permeability coefficient of the substrate SB3 is 1. (5) fp in the relational expression 1 used to express the width of each magnetic material body M1 is 0.25. (6) The pitch p between adjacent magnetic material bodies M1 is 2.848. (7) The thickness h of the substrate SB3 is 2.8 mm, where a thickness sh of the third substrate SB33 is 2 mm. (8) The thickness mh of each magnetic material body M2 is 0.2 mm.
In Example 20, the structure of the electromagnetic wave absorber 40 shown in
With the use of a terahertz time domain spectrometer, electromagnetic waves with different frequencies are incident on the electromagnetic wave absorber 40 of Example 19 to Example 20, so as to measure their electromagnetic wave absorption rates at each frequency, and the absorption spectrum graphs shown in
With reference to
With reference to
It can be known from the absorption spectrum graphs of the electromagnetic wave absorber 40 of the above Example 19 to Example 20 that in addition to the electromagnetic wave characteristic frequency of the plurality of magnetic material bodies M1, the electromagnetic wave absorber 40 is also added with a plurality of electromagnetic wave absorption frequencies due to the surface lattice resonance effect. Therefore, the electromagnetic wave absorber 40 of Example 19 to Example 20 may have electromagnetic wave characteristic absorption peaks in multiple frequency bands.
Further, it can also be known from the above absorption spectrum graphs of the electromagnetic wave absorber 40 of Example 19 to Example 20 that the electromagnetic wave absorption rate of the first electromagnetic wave characteristic absorption peak (F/Fm=50 GHZ) grows as the thickness sh of the third substrate SB33 in the substrate SB3 increases.
In Example 21, the structure of the electromagnetic wave absorber 50 shown in
(1) The electromagnetic wave characteristic frequency of the magnetic material bodies M1 is 50 GHz (twice the electromagnetic wave characteristic frequency is 100 GHz). (2) The dielectric coefficient of each magnetic material body M1 is 4. (5) fp in the relational expression 1 used to express the width of each magnetic material body M1 is 0.15. (6) sp in the relational expression 2 used to express the pitch p between adjacent magnetic material bodies M1 is 1. (7) The thickness h of the substrate SB4 is 0.4 mm. (8) The thickness mh of each magnetic material body M2 is 0.2 mm.
In Example 22, the structure of the electromagnetic wave absorber 50 shown in
In Example 23, the structure of the electromagnetic wave absorber 50 shown in
With the use of a terahertz time domain spectrometer, electromagnetic waves with different frequencies are incident on the electromagnetic wave absorber 50 of Example 21 to Example 23, so as to measure their electromagnetic wave absorption rates at each frequency, and the absorption spectrum graphs shown in
With reference to
With reference to
With reference to
It can be known from the absorption spectrum graphs of the electromagnetic wave absorber 50 of the above Example 21 to Example 23 that in addition to the electromagnetic wave characteristic frequency of the plurality of magnetic material bodies M1, the electromagnetic wave absorber 50 is also added with a plurality of electromagnetic wave absorption frequencies due to the surface lattice resonance effect. Therefore, the electromagnetic wave absorber 50 of Example 21 to Example 23 may have electromagnetic wave characteristic absorption peaks in multiple frequency bands.
Further, it can also be known from the above absorption spectrum graphs of the electromagnetic wave absorber 50 of Example 21 to Example 23 that the electromagnetic wave absorption rate of the first electromagnetic wave characteristic absorption peak (F/Fm=50 GHZ) grows as the thickness h of the substrate SB4 increases.
In Example 24, the structure of the electromagnetic wave absorber 10 shown in
In Example 25, the structure of the electromagnetic wave absorber 10 shown in
In Example 26, the structure of the electromagnetic wave absorber 10 shown in
With the use of a terahertz time domain spectrometer, electromagnetic waves with different frequencies are incident on the electromagnetic wave absorber 10 of Example 24 to Example 26, so as to measure their electromagnetic wave absorption rates at each frequency, and the absorption spectrum graphs shown in
With reference to
With reference to
With reference to
It can be known from the absorption spectrum graphs of the electromagnetic wave absorber 10 of the above Example 24 to Example 26 that in addition to the electromagnetic wave characteristic frequency of the plurality of magnetic material bodies M1, the electromagnetic wave absorber 10 is also added with a plurality of electromagnetic wave absorption frequencies due to the surface lattice resonance effect. Therefore, the electromagnetic wave absorber 40 of Example 24 to Example 26 may have electromagnetic wave characteristic absorption peaks in multiple frequency bands.
Further, from the above absorption spectrum graphs of the electromagnetic wave absorber 10 of Example 24 to Example 26, it can be used to absorb incident electromagnetic waves with different frequencies.
In Example 27, the structure of the electromagnetic wave absorber 10 shown in
With the use of a terahertz time domain spectrometer (“TeraFlash pro” system from Toptica Company), electromagnetic waves with different frequencies are incident on the electromagnetic wave absorber 10 of Example 27, so as to measure their electromagnetic wave absorption rates at each frequency, and the absorption spectrum graphs shown in
With reference to
It can be known from the absorption spectrum graph of the electromagnetic wave absorber 10 of the above Example 27 that in addition to the electromagnetic wave characteristic frequency of the plurality of magnetic material bodies M1, the electromagnetic wave absorber 10 is also added with a plurality of electromagnetic wave absorption frequencies due to the surface lattice resonance effect. Therefore, the electromagnetic wave absorber 10 of Example 27 may have electromagnetic wave characteristic absorption peaks in multiple frequency bands.
Further, from the above absorption spectrum graph of the electromagnetic wave absorber 10 of Example 27, it can be used to absorb incident electromagnetic waves with different frequencies.
The electromagnetic wave absorber used in Comparative Example 1 has a structure formed by one layer of magnetic material body, has a rectangular shape, and provides the following parameters.
(1) The electromagnetic wave characteristic frequency Fm of the magnetic material body is 50 GHz. (2) The dielectric coefficient of the magnetic material body is 4. (5) A length and the thickness of the magnetic material body are each 9 mm. (8) The thickness of the magnetic material body is 0.4 mm.
The electromagnetic wave absorber used in Comparative Example 2 has a structure in which one layer of magnetic material body and one layer of substrate are stacked on each other, has a rectangular shape, and provides the following parameters.
(1) The electromagnetic wave characteristic frequency of the magnetic material body is 50 GHz. (2) The dielectric coefficient of the magnetic material body is 4. (3) The dielectric coefficient of the substrate is 4.4. (4) The magnetic permeability coefficient of the substrate is 1. (5) The length and the thickness of the magnetic material body are each 9 mm. (7) The thickness h of the substrate is 0.4 mm. (8) The thickness of the magnetic material body is 0.4 mm.
With the use of a terahertz time domain spectrometer, electromagnetic waves with different frequencies are incident on the electromagnetic wave absorber of Comparative Example 1 and Comparative Example 2, so as to measure their electromagnetic wave absorption rates at each frequency, and the absorption spectrum graphs shown in
With reference to
With reference to
In view of the foregoing, by arranging the plurality of magnetic material bodies on the substrate in an array, the electromagnetic wave absorber provided by the disclosure can absorb electromagnetic waves in at least two frequency bands. In detail, the electromagnetic wave absorber provided by the disclosure can absorb electromagnetic waves with the same or similar frequency as the electromagnetic wave characteristic frequency of the magnetic material bodies. Further, a surface lattice resonance effect will occur between adjacent magnetic material bodies. As such, the electromagnetic wave absorber provided by the disclosure can have multiple electromagnetic wave absorption frequencies in addition to the abovementioned electromagnetic wave characteristic frequency, and therefore, can absorb high-frequency electromagnetic waves in other frequency bands (the frequencies of which are greater than the electromagnetic wave characteristic frequency of the magnetic material bodies). Based on the above, the electromagnetic wave absorber of the disclosure can be used in the next-generation communication systems to reduce the phenomenon of electromagnetic interference generated in the systems.
This application claims the priority benefit of U.S. provisional application Ser. No. 63/434,940, filed on Dec. 23, 2022. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
Number | Date | Country | |
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63434940 | Dec 2022 | US |