The present invention relates to an electron beam emitter with increased electron transmission efficiency by en electron emission source having both high work function and low work function surfaces, creating emission trajectories that are matched to the transmission pattern of the e-beam window.
Conventionally, an electron beam emitter includes an electron emission source that can emit electrons and a vacuum chamber that contains the electron emission source. The vacuum chamber has a transmission window that can transmit electrons. The transmission window includes foil that transmits electrons and a grid that supports the foil. The grid rises in temperature as it completely absorbs electrons from the electron emission source. Thus, a cooling mechanism is provided on the periphery of the transmission window to remove the excess energy and keep the grid at an acceptable operating temperature. In summary, the electron beam emitter accelerates electrons, which are emitted from the electron emission source, in the vacuum chamber and passes the accelerated electrons through the foil of the transmission window (the e-beam window) so as to emit electron beams to the outside (atmospheric side) of the vacuum chamber.
Generally, in a typical electron beam emitter shown in
As the electron e− exposed surface of the grid 10b is comparable to the electron e− exposed surface of the foil 10a, the fractional foil 12 absorption versus full absorption at the grid 10 leads to low transmission efficiency of electrons e− in prior art designs.
An objective of the present invention is to provide an electron beam emitter that has high electron transmission efficiency that allows for either
There are prior patents (e.g., U.S. Pat. No. 8,339,024) that achieve this goal by intercepting the waste beam with an additional structure, however, these concepts will result in internal high temperatures that would create undesired outgassing and additional thermal management requirements. The novelty of this invention is in eliminating the waste portion of the beam at the source and providing the most efficient solution.
In order to attain the objective, this invention is an electron beam emitter comprising: an electron emission source capable of emitting electrons; a vacuum chamber containing the electron emission source; and a transmission window that keeps airtightness of the vacuum chamber and is capable of transmitting the electrons from the electron emission source, the transmission window including a transmission portion that transmits the electrons and a non-transmission portion that blocks the electrons, the electron emission source including an emission portion that emits the electrons and a non-emission portion that does not emit the electrons, the emission portion having a lower work function than the non-emission portion, the non-emission portion being prepared so as to prevent the electrons from reaching the non-transmission portion.
With this configuration, the electron beam emitter can increase electron transmission efficiency allowing either low temperature operations or high current density output within the limits of the system.
[First Embodiment]
An electron beam emitter according to a first embodiment of the present invention will be described below with reference to the accompanying drawings.
As shown in
The transmission window 5 will be described below.
As shown in
The electron emission source 2, that is, the essence of the present invention, is specifically described below.
As shown in
A specific configuration of the electron emission source 2 will be described below.
The cathode 21 of the electron emission source 2 may be a disc-type cathode (hereinafter, will be called a disc cathode 21D) shown in
For the layout of the layer part 22 on the cathode 21, for example, patterning is selected from (1) to (4):
(1) CVD or PECVD With a Mask
The cathode 21 covered with a mask is subjected to CVD or PECVD (Plasma-Enhanced CVD) using the material of the layer part 22. The material is not deposited an portions covered with the mask and thus the portions serve as the emission portions. The material forms the layer part 22 on portions not covered with the mask, the portions serving as the non-emission portions.
(2) Etching After Vapor Deposition
The cathode 21 is deposited with the material of the layer part 22. After that, on a film formed by vapor deposition, portions corresponding to the emission portions are removed by etching so as to expose the cathode 21. Thus, the portions corresponding to the exposed cathode 21 serve as the emission portions, whereas the unremoved portions of the film serve as the non-emission portions.
(3) Mechanical Removal After Coating
The cathode 21 is coated with the material of the layer part 22. After that, on a film formed by coating, portions corresponding to the emission portions are removed by mechanical scraping so as to expose the cathode 21. Thus, the portions corresponding to the exposed cathode 21 serve as the emission portions, whereas the unremoved portions of the film serve as the non-emission portions.
(4) Spray Coating With a Mask
The cathode 21 is covered with a mask and then undergoes spray coating with the material of the layer part 22. Portions covered with the mask are not deposited with the material and thus serve as the emission portions, whereas the material forms the layer part 22 on portions not covered with the mask, the portions serving as the non-emission portions.
For example, the cathode 21 and the layer part 22 are made of the following materials: if the cathode 21 is composed of crystals of Hafnium Carbide (HfC) or Lanthanum Hexa-Boride (LaB6), the layer part 22 is made of pyrolytic graphite. The crystal of Hafnium Carbide or Lanthanum Hexa-Boride has a lower work function than pyrolytic graphite.
For example, the layout of the layer part 22 is designed as follows:
First, the trajectories of electrons e− emitted from the single cathode 21 are simulated. Subsequently, the electrons e− with the simulated trajectories are tracked after being categorized into the electrons e− reaching the foil 50 of the transmission window 5 and the electrons e− reaching the grid 51 of the transmission window 5. According to the tracking, the cathode 21 is categorized into portions for emitting the electrons e− reaching the foil 50 (hereinafter, will be called indispensable portions) and portions for emitting the electrons e− reaching the grid 51 (hereinafter, will be called dispensable portions). These steps are repeated to increase the accuracy of categorization. The layer part 22 is located on the dispensable portions. The layout of the layer part 22 does not need to completely match with the dispensable portions as long as the layout contains all the dispensable portions.
The effects of the electron beam emitter 1 will be discussed below.
When a proper voltage is applied from the power supply to the cathode 21 of the electron emission source 2, as shown in
Thus, according to the electron beam emitter 1, all electrons e− emitted from the electron emission source 2 reach the foil 50, thereby increasing the transmission efficiency of electrons e−.
Moreover, according to the electron beam emitter 1, electrons e− emitted from the electron emission source 2 do not reach the grid 51, thereby suppressing a temperature rise of the transmission window 5.
Due to higher transmission efficiency of electrons e− and suppression of a temperature rise of the transmission window 5, the configuration of the cooling unit is simplified more than a conventional device with the same maximum irradiation amount of electron beams.
Furthermore, due to higher transmission efficiency of electrons e− and suppression of a temperature rise of the transmission window 5, the maximum irradiation amount of electron beams is larger than that of the conventional device including the cooling unit with an identical configuration.
In the first embodiment, the specific materials of the cathode 21 and the layer part 22 were described. The materials are not particularly limited. The cathode 21 may be made of any material as long as the material has a lower work function than the material of the layer part 22. In other words, the layer part 22 may be made of any material as long as the material has a higher work function than the material of the cathode 21.
[Second Embodiment]
As shown in
Differences from the first embodiment will be mainly described below. The same configurations as those of the first embodiment will be indicated by the reference numerals and the explanation thereof is omitted.
The cathode 21 according to the second embodiment of the present invention has a higher work function than the layer part 23. In other words, a material having a lower work function than the cathode 21 is deposited as the layer part 23 on the cathode 21. Thus, on the emitting surface of the cathode 21, portions having the layer part 23 serve as emission portions for emitting electrons e− while portions not having the layer part 23 serve as non-emission portions that do not emit electrons e−. The layout of the layer part 23 is designed such that emitted electrons e− reach only as far as the foil 50 without reaching a grid 51.
For example, the cathode 21 and the layer part 23 according to the second embodiment of the present invention are made of the following materials: if a disc cathode 21D is made of Iridium (Ir) or a wire cathode 21W is made of Tungsten (W), the layer part 23 is made of Barium Oxide (BaO). Naturally, iridium or Tungsten has a higher work function than Barium Oxide.
Also in the electron beam emitter 1 according to the second embodiment of the present invention, emitted electrons e− reach only as far as the foil 50 without reaching the grid 51. Thus, the electron beam emitter 1 according to the second embodiment of the present invention has the same effect as the electron beam emitter 1 according to the first embodiment.
In the second embodiment, the specific materials of the cathode 21 and the layer part 23 were described. The materials are not particularly limited. The cathode 21 may be made of any material, as long as the material has a higher work function than the material of the layer part 23. In other words, the layer part 23 may be made of any material as long as the material has a lower work function than the material of the cathode 21.
In the first and second embodiments, the disc cathode 21D and the wire cathode 21W were described as examples of the cathode 21. The cathode 21 is not particularly limited as long as the non-emission portions are deposited such that electrons e− do not reach the grid 51.
The vacuum pump 4 connected to the vacuum chamber 3 in the first and second embodiments may not be connected to the vacuum chamber 3.
In the first and second embodiments, the coolant 32 is used for the cooling unit. The coolant 32 may be replaced with cooling air, that is, the cooling unit may be an air-cooled unit. In the case of an air-cooled unit, cooling air may be caused to impinge on the overall transmission window 5 or only the foil 50.
In the first and second embodiments, the transmission window 5 includes the foil 50 and the grid 51. The transmission window 5 is not limited to this configuration as long as the transmission window 5 has a transmission portion that transmits electrons and a non-transmission portion that does not transmit electrons. The transmission window may be formed by patterning a material (e.g., etching a pattern on a Silicon disk) with a certain thickness so as to have recessed portions. In this case, the recessed portions serve as transmission portions while other portions serve as non-transmission portions.
Furthermore, although detailed description is omitted in the first and second embodiments, an electrostatic lens is disposed near the cathode 21 such that electrons e− emitted from the emitting surface of the cathode 21 travel in straight lines.
Number | Name | Date | Kind |
---|---|---|---|
3967150 | Lien et al. | Jun 1976 | A |
4499405 | Loda | Feb 1985 | A |
4873468 | Miram et al. | Oct 1989 | A |
5612588 | Wakalopulos | Mar 1997 | A |
7795792 | Arnold | Sep 2010 | B2 |
8339024 | Walther et al. | Dec 2012 | B2 |
20020135290 | Avnery | Sep 2002 | A1 |
20040183032 | Fink et al. | Sep 2004 | A1 |
20070278928 | Lee et al. | Dec 2007 | A1 |
Entry |
---|
Isr in PCT/JP2015/002321 dated Jul. 30, 2015. |
Number | Date | Country | |
---|---|---|---|
20160079028 A1 | Mar 2016 | US |