Claims
- 1. An exit window for an electron beam emitter through which electrons pass in an electron beam, the exit window comprising:
a structural foil for metal to metal bonding with the electron beam emitter, the structural foil having a central opening formed therethrough; and a window layer of high thermal conductivity extending over the central opening of the structural foil and providing a high thermal conductivity region through which the electrons can pass.
- 2. The exit window of claim 1 in which the window layer is a layer of diamond.
- 3. The exit window of claim 2 in which the structural foil is titanium foil.
- 4. The exit window of claim 3 further comprising an intermediate layer of silicon having a central opening formed therethrough corresponding to the central opening through the structural foil, the layer of silicon being between the layer of diamond and the structural foil.
- 5. The exit window of claim 3 in which the titanium foil is about 10 to 1000 microns thick.
- 6. The exit window of claim 5 in which the diamond layer is about 3 to 20 microns thick.
- 7. The exit window of claim 4 in which the silicon layer is about 0.25 to 1 mm thick.
- 8. The exit window of claim 2 in which the diamond layer is supported by a support plate of the electron beam emitter.
- 9. An exit window for an electron beam emitter through which electrons pass in an electron beam, the exit window comprising:
a structural foil for metal to metal bonding with the electron beam emitter, the structural foil having a central opening formed therethrough; an intermediate layer of silicon having a central opening therethrough corresponding to the central opening through the structural foil; and a window layer of diamond extending over the central openings of the layers of silicon and the structural foil, the layer of silicon being between the layer of diamond and the structural foil.
- 10. An electron beam emitter comprising:
a vacuum chamber; an electron generator positioned within the vacuum chamber for generating electrons; and an exit window on the vacuum chamber through which the electrons exit the vacuum chamber in an electron beam, the exit window comprising a structural foil for metal to metal bonding with the vacuum chamber of the electron beam emitter, the structural foil having a central opening formed therethrough, and a window layer of high thermal conductivity extending over the central opening of the structural foil and providing a high thermal conductivity region through which the electrons can pass.
- 11. The electron beam emitter of claim 10 in which the window layer is a layer of diamond.
- 12. The electron beam emitter of claim 11 in which the structural foil is titanium foil.
- 13. The electron beam emitter of claim 12 further comprising an intermediate layer of silicon having a central opening formed therethrough corresponding to the central opening through the structural foil, the layer of silicon being between the layer of diamond and the structural foil.
- 14. The electron beam emitter of claim 12 in which the titanium foil is about 10 to 1000 microns thick.
- 15. The electron beam emitter of claim 14 in which the diamond layer is about 3 to 20 microns thick.
- 16. The electron beam emitter of claim 13 in which the silicon layer is about 0.25 to 1 mm thick.
- 17. The electron beam emitter of claim 9 further comprising a support plate for supporting the diamond layer of the exit window.
- 18. A method of forming an exit window for an electron beam emitter through which electrons pass in an electron beam comprising:
forming a window layer of high thermal conductivity over a substrate; forming a central opening through the substrate such that the window layer extends over the central opening and provides a high thermal conductivity region through which electrons can pass; and extending a structural foil outwardly from the window layer for metal to metal bonding with the electron beam emitter, the structural foil having a central opening formed therethrough.
- 19. The method of claim 18 further comprising forming the window layer from a layer of diamond.
- 20. The method of claim 19 in which the structural foil forms the substrate.
- 21. The method of claim 19 in which the substrate is an intermediate layer of silicon and the structural foil is titanium foil, the layer of silicon being between the layer of diamond and the structural foil.
- 22. The method of claim 21 in which the titanium foil is formed about 10 to 1000 microns thick.
- 23. The method of claim 22 in which the diamond layer is formed about 3 to 20 microns thick.
- 24. The method of claim 21 in which the silicon layer is formed about 0.25 to 1 mm thick.
- 25. A method of forming an exit window for an electron beam emitter through which electrons pass in an electron beam comprising:
forming a window layer of diamond over an intermediate substrate of silicon; forming an opening through the silicon such that the layer of diamond extends over the central opening and provides a high thermal conductivity region through which the electrons can pass; and extending a structural foil outwardly from the layer of diamond for metal to metal bonding with the electron beam emitter, the structural foil having a central opening formed therethrough corresponding with the central opening through the silicon, the layer of silicon being between the layer of diamond and the structural foil.
- 26. A method of forming an electron beam emitter comprising:
providing a vacuum chamber; positioning an electron generator within the vacuum chamber for generating electrons; and mounting an exit window on the vacuum chamber through which the electrons exit the vacuum chamber in an electron beam, the exit window comprising a structural foil for metal to metal bonding with the vacuum chamber of the electron beam emitter, the structural foil having a central opening formed therethrough, and a window layer extending over the central opening of the structural foil and providing a high thermal conductivity region through which the electrons can pass.
RELATED APPLICATION
[0001] This application is a continuation-in-part of U.S. application Ser. No. 10/103,539, filed Mar. 20, 2002, which is a continuation-in-part of U.S. application Ser. No. 09/813,929, filed Mar. 21, 2001. The entire teachings of the above applications are incorporated herein by reference.
Continuation in Parts (2)
|
Number |
Date |
Country |
Parent |
10103539 |
Mar 2002 |
US |
Child |
10751676 |
Jan 2004 |
US |
Parent |
09813929 |
Mar 2001 |
US |
Child |
10103539 |
Mar 2002 |
US |