Patent Grant
9390878
This application claims all benefits accruing under 35 U.S.C. §119 from China Patent Application 201410024419.0, filed on Jan. 20, 2014 in the China Intellectual Property Office, disclosure of which is incorporated herein by reference.
1. Technical Field
The present disclosure relates to an electron emission source, an electron emission device, and an electron emission display with the electron emission device, especially a cold cathode electron emission device with carbon nanotubes and the electron emission display with the same.
2. Description of Related Art
Electron emission display device is an integral part of the various vacuum electronics devices and equipment. In the field of display technology, electron emission display device can be widely used in automobiles, home audio-visual appliances, industrial equipment, and other fields.
Typically, the electron emission source in the electron emission display device has two types: hot cathode electron emission source and the cold cathode electron emission source. The cold cathode electron emission source comprises surface conduction electron-emitting source, field electron emission source, metal-insulator-metal (MIM) electron emission sources, and metal-insulator-semiconductor-metal (MISM) electron emission source, etc.
In traditional MISM electron emission source, the electrons need to have sufficient electron average kinetic energy to escape through the upper electrode to a vacuum. However, in traditional MISM electron emission source, since the barrier is often higher than the average kinetic energy of electrons, the electron emission in the electron emission device is low, and the display effect of the electron emission display is not satisfied.
What is needed, therefore, is to provide an electron emission source, an electron emission device, and an electron emission display that can overcome the above-described shortcomings.
Many aspects of the embodiments can be better understood with reference to the following drawings. The components in the drawings are not necessarily drawn to scale, the emphasis instead being placed upon clearly illustrating the principles of the embodiments. Moreover, in the drawings, like reference numerals designate corresponding parts throughout the several views.
The disclosure is illustrated by way of example and not by way of limitation in the figures of the accompanying drawings in which like references indicate similar elements. It should be noted that references to “an” or “one” embodiment in this disclosure are not necessarily to the same embodiment, and such references mean at least one.
Referring to
Furthermore, the electron emission source 10 can be disposed on a substrate 106, and the second electrode 105 is applied on a surface of the substrate 106. The substrate 106 supports the electron emission source 10. A material of the substrate 106 can glass, quartz, ceramics, diamond, silicon, or other hard plastic materials. The material of the substrate 106 can also be resins and other flexible materials. In one embodiment, the substrate 106 is silica.
The electron collection layer 103 is sandwiched between the insulating layer 104 and the semiconductor layer 102. The first electrode 101 is located on the semiconductor layer 102. The first electrode 101 is insulated from the second electrode 105 by the insulating layer 104. The electron collection layer 103 collects and storage the electrons. The semiconductor layer 102 accelerates the electrons, thus the electrons can have enough energy to escape from the first electrode 101.
A material of the insulating layer 104 can be a hard material such as aluminum oxide, silicon nitride, silicon oxide, or tantalum oxide. The material of the insulating layer 104 can also be a flexible material such as benzocyclobutene (BCB), acrylic resin, or polyester. A thickness of the insulating layer 104 can range from about 50 nanometers to 100 micrometers. In one embodiment, the insulating layer 104 is tantalum oxide with a thickness of 100 nanometers.
The semiconductor layer 102 is sandwiched between the first electrode 101 and the electron collection layer 103. The semiconductor layer 102 plays a role of accelerating electrons. The electrons are accelerated in the semiconductor layer 102. A material of the semiconductor layer 102 can be a semiconductor material, such as zinc sulfide, zinc oxide, magnesium zinc oxide, magnesium sulfide, cadmium sulfide, cadmium selenide, or zinc selenide. A thickness of the semiconductor layer 102 can range from about 3 nanometers to about 100 nanometers. In one embodiment, the material of the semiconductor layer 102 is zinc sulfide having a thickness of 50 nanometers.
The electron collection layer 103 is sandwiched between the semiconductor layer 102 and the insulating layer 104. The electron collection layer 103 is a conductive layer comprising a conductive material. The material of the electron collection layer 103 can be gold, platinum, scandium, palladium, hathium, or other metal or metal alloy.
Furthermore, the material of the electron collection layer 103 can also be carbon nanotubes or graphene. A thickness of the electron collection layer 103 can range from about 10 nanometers to about 1 micrometer.
In one embodiment, the electron collection layer 103 can comprise a carbon nanotube layer. The carbon nanotube layer comprises a plurality of carbon nanotubes. The carbon nanotubes in the electron collection layer 103 extend parallel to the surface of the electron collection layer 103.
The carbon nanotube layer includes a plurality of carbon nanotubes. The carbon nanotubes in the carbon nanotube layer can be single-walled, double-walled, or multi-walled carbon nanotubes. The length and diameter of the carbon nanotubes can be selected according to need. The thickness of the carbon nanotube layer can be in a range from about 10 nm to about 100 μm, for example, about 10 nm, 100 nm, 200 nm, 1 μm, 10 μm or 50 μm.
The carbon nanotube layer forms a pattern. The patterned carbon nanotube layer defines a plurality of apertures. The apertures can be dispersed uniformly. The apertures extend throughout the carbon nanotube layer along the thickness direction thereof. The aperture can be a hole defined by several adjacent carbon nanotubes, or a gap defined by two substantially parallel carbon nanotubes and extending along axial direction of the carbon nanotubes. The size of the aperture can be the diameter of the hole or width of the gap, and the average aperture size can be in a range from about 10 nm to about 500 μm, for example, about 50 nm, 100 nm, 500 nm, 1 μm, 10 μm, 80 μm or 120 μm. The hole-shaped apertures and the gap-shaped apertures can exist in the patterned carbon nanotube layer at the same time. The sizes of the apertures within the same carbon nanotube layer can be different. The smaller the size of the apertures, the less dislocation defects will occur during the process of growing first semiconductor layer 120. In one embodiment, the sizes of the apertures are in a range from about 10 nm to about 10 μm.
The carbon nanotubes of the carbon nanotube layer can be orderly arranged to form an ordered carbon nanotube structure or disorderly arranged to form a disordered carbon nanotube structure. The term ‘disordered carbon nanotube structure’ includes, but is not limited to, a structure where the carbon nanotubes are arranged along many different directions, and the aligning directions of the carbon nanotubes are random. The number of the carbon nanotubes arranged along each different direction can be substantially the same (e.g. uniformly disordered). The disordered carbon nanotube structure can be isotropic. The carbon nanotubes in the disordered carbon nanotube structure can be entangled with each other. The term ‘ordered carbon nanotube structure’ includes, but is not limited to, a structure where the carbon nanotubes are arranged in a consistently systematic manner, e.g., the carbon nanotubes are arranged approximately along a same direction and/or have two or more sections within each of which the carbon nanotubes are arranged approximately along a same direction (different sections can have different directions).
In one embodiment, the carbon nanotubes in the carbon nanotube layer are arranged to extend along the direction substantially parallel to the surface of the semiconductor layer 102. In one embodiment, all the carbon nanotubes in the carbon nanotube layer are arranged to extend along the same direction. In another embodiment, some of the carbon nanotubes in the carbon nanotube layer are arranged to extend along a first direction, and some of the carbon nanotubes in the carbon nanotube layer are arranged to extend along a second direction, perpendicular to the first direction.
In one embodiment, the carbon nanotube layer is a free-standing structure and can be drawn from a carbon nanotube array. The term “free-standing structure” means that the carbon nanotube layer can sustain the weight of itself when it is hoisted by a portion thereof without any significant damage to its structural integrity. Thus, the carbon nanotube layer can be suspended by two spaced supports. The free-standing carbon nanotube layer can be laid on the insulating layer 104 directly and easily.
The carbon nanotube layer can be a substantially pure structure of the carbon nanotubes, with few impurities and chemical functional groups. The carbon nanotube layer can be a composite including a carbon nanotube matrix and non-carbon nanotube materials. The non-carbon nanotube materials can be graphite, graphene, silicon carbide, boron nitride, silicon nitride, silicon dioxide, diamond, amorphous carbon, metal carbides, metal oxides, or metal nitrides. The non-carbon nanotube materials can be coated on the carbon nanotubes of the carbon nanotube layer or filled in the apertures. In one embodiment, the non-carbon nanotube materials are coated on the carbon nanotubes of the carbon nanotube layer so the carbon nanotubes can have a greater diameter and the apertures can a have smaller size. The non-carbon nanotube materials can be deposited on the carbon nanotubes of the carbon nanotube layer by CVD or physical vapor deposition (PVD), such as sputtering.
The carbon nanotube layer can include at least one carbon nanotube film, at least one carbon nanotube wire, or a combination thereof. In one embodiment, the carbon nanotube layer can include a single carbon nanotube film or two or more stacked carbon nanotube films. Thus, the thickness of the carbon nanotube layer can be controlled by the number of the stacked carbon nanotube films. The number of the stacked carbon nanotube films can be in a range from about 2 to about 100, for example, about 10, 30, or 50. In one embodiment, the carbon nanotube layer can include a layer of parallel and spaced carbon nanotube wires. The carbon nanotube layer can also include a plurality of carbon nanotube wires crossed or weaved together to form a carbon nanotube net. The distance between two adjacent parallel and spaced carbon nanotube wires can be in a range from about 0.1 μm to about 200 μm. In one embodiment, the distance between two adjacent parallel and spaced carbon nanotube wires can be in a range from about 10 μm to about 100 μm. The size of the apertures can be controlled by controlling the distance between two adjacent parallel and spaced carbon nanotube wires. The length of the gap between two adjacent parallel carbon nanotube wires can be equal to the length of the carbon nanotube wire. It is understood that any carbon nanotube structure described can be used with all embodiments.
In one embodiment, the carbon nanotube layer includes at least one drawn carbon nanotube film. A drawn carbon nanotube film can be drawn from a carbon nanotube array that is able to have a film drawn therefrom. The drawn carbon nanotube film includes a plurality of successive and oriented carbon nanotubes joined end-to-end by van der Waals attractive force therebetween. The drawn carbon nanotube film is a free-standing film. Referring to
Referring to
The carbon nanotube wire can be untwisted or twisted. Treating the drawn carbon nanotube film with a volatile organic solvent can form the untwisted carbon nanotube wire. Specifically, the organic solvent is applied to soak the entire surface of the drawn carbon nanotube film. During the soaking, adjacent parallel carbon nanotubes in the drawn carbon nanotube film will bundle together, due to the surface tension of the organic solvent as it volatilizes. Thus, the drawn carbon nanotube film will be shrunk into untwisted carbon nanotube wire. Referring to
The twisted carbon nanotube wire can be formed by twisting a drawn carbon nanotube film using a mechanical force to turn the two ends of the drawn carbon nanotube film in opposite directions. Referring to
The electron collection layer 103 can also be a graphene layer. The graphene layer can include at least one graphene film. The graphene film, namely a single-layer graphene, is a single layer of continuous carbon atoms. The single-layer graphene is a nanometer-thick two-dimensional analog of fullerenes and carbon nanotubes. When the graphene layer includes the at least one graphene film, a plurality of graphene films can be stacked on each other or arranged coplanar side by side. The thickness of the graphene layer can be in a range from about 0.34 nanometers to about 10 micrometers. For example, the thickness of the graphene layer can be 1 nanometer, 10 nanometers, 200 nanometers, 1 micrometer, or 10 micrometers. The single-layer graphene can have a thickness of a single carbon atom. In one embodiment, the graphene layer is a pure graphene structure consisting of graphene. Because the single-layer graphene has great conductivity, thus the electrons can be easily collected and accelerated to the semiconductor layer 102.
The graphene layer can be prepared and transferred to the substrate by graphene powder or graphene film. The graphene film can also be prepared by the method of chemical vapor deposition (CVD) method, a mechanical peeling method, electrostatic deposition method, a silicon carbide (SiC) pyrolysis, or epitaxial growth method. The graphene powder can prepared by liquid phase separation method, intercalation stripping method, cutting carbon nanotubes, preparation solvothermal method, or organic synthesis method.
In one embodiment, the electron collection layer 103 is a drawn carbon nanotube film having a thickness of 5 nanometers to 50 nanometers. The carbon nanotube film has good tensile conductivity and electron collecting effect. Furthermore, the carbon nanotube film has good mechanical properties, which can effectively improve the lifespan of the electron emission source 10.
The first electrode 101 is a thin conductive metal film. A material of the first electrode 101 can be gold, platinum, scandium, palladium, or hafnium metal. The thickness of the first electrode 101 can range from about 10 nanometers to about 100 micrometers, such as 10 nanometers, 50 nanometers. In one embodiment, the first electrode 101 is molybdenum film having a thickness of 100 nanometers. Furthermore, the material of the first electrode 101 may also be carbon nanotube layer or graphene layer. The plurality of carbon nanotubes in the carbon nanotube layer form a conductive network. The carbon nanotube layer can also define a plurality of apertures. Thus the electrons can be easily escaped from the first electrode 101. The material of the second electrode 105 can be same as the first electrode 101.
The electron emission source 10 works in the alternating current (AC) driving mode. The working principle of the electron emission source 10 is: in the negative half cycle, the potential of the second electrode 105 is high, and the electrons are injected into the semiconductor layer 102 from the first electrode 101. While the electrons reach the electron collection layer 103, the electrons will be collected and stored in the electron collection layer 103. An interface between the electron collection layer 103 and insulating layer 104 forms an interface state. In the positive half cycle, due to the higher potential of the carbon nanotube layer of the first electrode 101, the electrons stored on the interface state are pulled to the semiconductor layer 102 and accelerated in the semiconductor layer 102. Because the semiconductor layer 102 is in contact with the first electrode 101, a part of high-energy electrons can rapidly pass through the carbon nanotube layer of the first electrode 101.
Referring to
(S11) locating a second electrode 105 on a surface of a substrate 106;
(S12) depositing an insulating layer 104 on the second electrode 105;
(S13) applying an electron collection layer 103 on the insulating layer 104;
(S14) locating a semiconductor layer 102 on the electron collection layer 103; and
(S15) applying a first electrode 101 on the semiconductor layer 102.
In step (S11), the substrate 106 can be rectangular. The material of the substrate 106 can be insulating material such as glass, ceramic, or silicon dioxide. In one embodiment, the substrate 106 is a silicon dioxide.
The preparation method of the second electrode 105 can be magnetron sputtering method, vapor deposition method, or an atomic layer deposition method. In one embodiment, the second electrode 105 is the molybdenum metal film formed by vapor deposition, and the thickness of the second electrode 105 is about 100 nanometers.
In step (S12), the preparation method of the insulating layer 104 can be the magnetron sputtering method, the vapor deposition method, or the atomic layer deposition method. In one embodiment, the insulating layer 104 is tantalum oxide formed by atomic layer deposition method, and the thickness of the insulating layer 104 is about 100 nanometers.
In step (S13), the method of forming the electron collector layer 103 can be selected according to the material. While the material of the electron collector layer 103 is metal or metal alloy, the electron collection layer 103 can be formed by magnetron sputtering, vapor deposition, or atomic layer deposition. While the electron collector layer 103 comprises carbon nanotube layer, the electron collection layer 103 can be formed by directly locating a drawn carbon nanotube film, a flocculate carbon nanotube film, or a pressed carbon nanotube film on the insulating layer 104. While the material of the electron collector layer 103 is graphene, the electron collection layer 103 can be formed by applying a graphene layer on the insulating layer 104. In one embodiment, the electron collection layer 103 is formed by directly locating a carbon nanotube film drawn from a carbon nanotube array. The thickness of the electron collector layer 103 ranges from about 5 nanometers to about 50 nanometers.
In step (S14), the method of forming semiconductor layer 102 can be similar to the method of forming the insulating layer 104. In one embodiment, the semiconductor layer 102 is zinc sulfide layer formed by a vapor deposition method, and the thickness of the semiconductor layer 102 is about 50 nanometers.
In step (S15), the method of forming the first electrode 101 can be same as the method of forming the electron collection layer 103. In one embodiment, the drawn carbon nanotube film is applied as the first electrode 101.
The electron emission source 10 can have the following advantages. The electron collection layer 103 is located between the semiconductor layer 102 and the insulating layer 104, thus the electron collection layer 103 can effectively collect and store the electrons between the semiconductor layer 102 and the insulating layer 104, and the electron emission efficiency of the electron emission source 10 can be improved compared to the traditional MISM electron emission source.
Referring to
The structure of electron emission source 20 is similar to the structure of electron emission source 10, except that the pair of bus electrodes 107 is located on the first electrode 101.
The pair of bus electrodes 107 are spaced from each other and electrically connected to the first electrode 101 in order to supply current. Each bus electrode 107 is a bar-shaped electrode.
While the first electrode 101 comprises the plurality of carbon nanotubes, the pair of bus electrodes 107 can be applied on the two opposite sides of the first electrode 101 along the extending direction of the carbon nanotubes. The extending direction of the bar-shaped bus electrode 107 is perpendicular to the extending direction of the plurality of carbon nanotubes of the first electrode 101. Thus the current can be uniformly distributed in the first electrode 101.
A shape of the bus electrode 107 can be bar-shaped, square, triangular, rectangular, etc. A material of the bus electrode 107 can be gold, platinum, scandium, palladium, hathium, or metal alloy. In one embodiment, the bus electrode 107 is bar-shaped platinum electrode. The pair of bar-shaped bus electrodes 107 are parallel with and spaced from each other.
Referring to
The electron emission unit 30 is similar to the electron emission source structure 10 described above, except that the plurality of electron emission units 30 share the common insulating layer 104. The plurality of electron emission units 30 can work independently from each other. In detail, the first electrodes 101 in adjacent two of the plurality of electron emission units 30 are spaced apart from each other, the semiconductor layers 102 in adjacent two of the plurality of electron emission units 30 are spaced apart from each other, and the second electrodes 105 in adjacent two of the plurality of electron emission units 30 are also spaced apart from each other. In one embodiment, a distance between adjacent two semiconductor layers 102 is about 200 nanometers, a distance between adjacent two first electrodes 101 is about 200 nanometers, and a distance between the adjacent two electrodes 105 is about 200 nanometers.
An embodiment of a method of making electron emission device 300 comprises:
(S21) locating a plurality of second electrodes 105 on a surface of a substrate 106, wherein the plurality of second electrodes 105 are spaced from each other;
(S22) depositing an insulating layer 104 on the plurality of second electrodes 105;
(S23) applying an electron collection layer 103 on the insulating layer 104;
(S24) forming a plurality of semiconductor layer 102 by locating a semiconductor layer preform on the electron collection layer 103 and patterning the semiconductor layer preform; and
(S25) applying a plurality of first electrodes 101 on the plurality of semiconductor layer 102.
The method of making the electron emission device 300 is similar to the method of making the electron emission source 10, except that the plurality of second electrodes 105 is applied on the substrate 106 and spaced from each other.
In step (S21), the method of forming the plurality of second electrodes 105 can be screen printing method, magnetron sputtering method, vapor deposition method, atomic layer deposition method. In one embodiment, the plurality of second electrodes 105 are formed via the vapor deposition method comprising:
providing a mask layer having a plurality of openings;
deposing a conductive layer on the mask layer; and
removing the mask layer.
The material of the mask layer can be polymethyl methacrylate (PMMA) or silicone compound (HSQ). The size and the position of the openings in the mask layer can be selected according to the requirement of the distribution of the plurality of electron emitting units 30. In one embodiment, the material of the second electrode 105 is molybdenum. The number of the second electrode 105 is 16, and the number of the electron emission unit 30 is also 16.
In step (S25), the method for forming the first electrode 101 can be selected according to the material of the first electrode 101. While the material of the first electrode 101 is conductive metal, the first electrode can be formed by sputtering, atomic layer deposition, vapor deposition method. While the first electrode 101 is graphene or carbon nanotubes, the first electrode 101 can be formed by chemical vapor deposition. The carbon nanotube layer or graphene membrane is etched to form the first electrodes 101 spaced apart.
In step (S24), the semiconductor layer preform can be patterned via plasma etching, laser etching, or wet etching. In one embodiment, the semiconductor layer preform is patterned according to the distribution of the first electrode 101. Thus each of the plurality of electron emission units 30 comprises one electrode 101, one semiconductor layer 102, and one second electrode 105.
Furthermore, the electron collection layer 103 can also be patterned. Thus the first electrode 101, the semiconductor layer 102, the electron collection layer 103, and the second electrode 105 in the plurality of electron emission units 30 are spaced from each other. The plurality of electron emission units 30 share common insulating layer 104. The electron collection layer 103 can be patterned by plasma etching method, laser etching method, or wet etching method.
Referring to
The electron emission device 400 is similar to the electron emission device 300, except that the electron emission device 400 further comprises the plurality of row electrodes 401 and the plurality of column electrodes 402 electrically connected to the plurality of electron emission units 40.
The plurality of row electrodes 401 is parallel with and spaced from each other. Similarly, the plurality of column electrodes 402 are parallel with and spaced from each other. The plurality of column electrodes 402 are insulated from the plurality of row electrodes 402 through the insulating layer 104. The adjacent two row electrodes 401 are intersected with the adjacent two row electrodes 401 to form a grid.
A section is defined between the adjacent two row electrodes 401 and the adjacent two column electrodes 402. The electron emission unit 40 is received in one of sections and electrically connected to the row electrode 401 and the column electrode 402. The row electrode 401 and the column electrode 402 can electrically connect to the electron emission unit 40 via two electrode leads 403 respectively to supply current for the electron emission unit 40.
In one embodiment, the plurality of column electrodes 402 are perpendicular to the plurality of row electrodes 401.
The plurality of electron emission units 40 form an array with a plurality of rows and columns. The plurality of first electrodes 101 in the plurality of electron emission units 40 are spaced apart from each other. The plurality of second electrodes 105 in the plurality of electron emission units 40 are also spaced apart from each other. The plurality of semiconductor layers 102 in the plurality of electron emission units 40 can be spaced apart from each other.
In one embodiment, the plurality of electron collection layer 103 in the plurality of electron emission units 40 can connect to each other to form an integrated structure. It means that the plurality of electron collection layer 103 form a continuous layered structure, and the plurality of electron emission units 40 share a common electron collection layer 103.
Referring to
The anode structure 510 comprises a glass substrate 512, an anode 514 on the glass substrate 512, and phosphor layer 516 coated on the anode 514. The anode structure 510 is supported by an insulating support 518. The substrate 106, the glass substrate 512, and the insulating support 518 form a sealed space. The anode 514 can be indium tin oxide (ITO) film. The phosphor layer 516 face to the plurality of electron emission units 40.
In detail, the phosphor layer 516 face to the first electrode 101 to receive electrons emitted from the first electrode 101. In application, different voltages are applied to the first electrode 101, the second electrode 105, and the anode 514 of the electron emission display 500. In one embodiment, the second electrode 105 is at the ground or zero voltage, the voltage applied on the first electrode 101 is several tens of volts, and the voltage applied on the anode 514 is a few hundred volts. The electrons emitted from the first electrode 101 of the electron emission unit 40 are driven under the electric filed to move toward the phosphor layer 516. The electrons eventually reaches the anode structure 510 and bombarded the phosphor layer 516 coated on the anode 514. Thus fluorescence can be activated from the phosphor layer 516. Referring to
Referring to
The electron emission device 600 is similar to the electron emission device 400, except that the electron emission device 600 comprises the plurality of bar-shaped first electrodes 1010 and the plurality of bar-shaped second electrodes 1050.
The first direction can be defined as the X direction, and the second direction can be defined as the Y direction that intersects with the X direction. The Z direction is defined as a third direction perpendicular to both the X direction and Y direction. The plurality of first electrodes 1010 are aligned along a plurality of rows, and the plurality of second electrodes 1050 are aligned along a plurality of columns. Thus the plurality of first electrodes 1010 and the plurality of second electrodes 1050 are overlapped with each other at the plurality of intersections. An electron emission unit 60 is formed at each intersection in the electron emission device 600. The electron emission unit 60 comprises the semiconductor layer 102, the electron collection layer 103, and the insulating layer 104 sandwiched between the first electrode 1010 and the second electrode 1050 at the intersection, and the semiconductor layer 102 is in contact with the first electrode 1010.
The plurality of electron emission units 60 can be spaced from each other and aligned along a plurality of rows and a plurality of columns. The semiconductor layers 102 in the plurality of electron emission units 60 are also spaced apart from each other. The plurality of semiconductor layers 102 aligned along the same row are electrically connected to the same first electrode 101. The plurality of semiconductor layers 102 aligned along the same column are electrically connected to the same second electrode 105. Thus the plurality of electron emission units 60 aligned along the same rows share the same first electrode 101, and the plurality of electron emission units 60 aligned along the same columns share the same second electrode 105.
Furthermore, the plurality of electron emission units 60 can share a common electron collection layer 103. The plurality of electron emission units 60 can also share a common insulating layer 104. In one embodiment, the electron collection layer 103 in the plurality of electron emission units 60 are spaced apart from each other, and the insulating layer 104 in the plurality of electron emission units 60 are also spaced apart from each other.
While a voltage is applied between the first electrode 1010 and the second electrode 1050, the electrons can be emitted from each of the plurality of electron emission units 60 at the intersections.
In application, different voltages can be applied to the first electrode 1010, the second electrode 1050, and the anode 514. The second electrode 1050 can be applied with a ground or zero voltage, the voltage applied on the first electrode 1010 can be tens of volts to hundreds of volts. An electric field is formed between the first electrode 1010 and the second electrode 1050 at the intersection. The electrons pass through the semiconductor layer 102 and emit from the first electrode 1010.
An embodiment of a method of making electron emission device 600 comprises:
(S31) forming a plurality of second electrodes 1050 on a surface of a substrate 106, wherein the plurality of second electrodes 1050 are spaced from each other and extend along a first direction;
(S32) depositing an insulating layer 104 on the plurality of second electrodes 1050;
(S33) applying an electron collection layer 103 on the insulating layer 104;
(S34) forming a plurality of semiconductor layers 102 by locating a semiconductor preform on the electron collection layer 103 and patterning the semiconductor layer preform; and
(S25) applying a plurality of first electrodes 1010 on the plurality of semiconductor layer 102 according to the plurality of second electrodes 105, wherein the plurality of first electrodes 1010 are spaced from each other and extend along a second direction.
The method of making electron emission device 600 in present embodiment is similar to the method of making electron emission device 300. The first direction can be intersected with the second direction.
Furthermore, the electron collection layer 103 and the insulating layer 104 can also be patterned according the patterned structure of the first electrode 1010.
Referring to
The electron emission display 700 is similar to the electron emission display 500, except that the plurality of first electrodes 101 are connected with each other to form a plurality of bar-shaped first electrodes 1010 along a first direction. Furthermore, the plurality of second electrodes 105 are connected with each other to form the plurality of second electrodes 1050 along a second direction.
The electrons emitted from the surface of the first electrodes 1010 at the intersection and bombard the phosphor layer 516 coated on the anode 514. Thus fluorescence is generated from the electron emission display 700.
Depending on the embodiment, certain of the steps of methods described may be removed, others may be added, and the sequence of steps may be altered. It is also to be understood that the description and the claims drawn to a method may include some indication in reference to certain steps. However, the indication used is only to be viewed for identification purposes and not as a suggestion as to an order for the steps.
It is to be understood that the above-described embodiments are intended to illustrate rather than limit the disclosure. Variations may be made to the embodiments without departing from the spirit of the disclosure as claimed. It is understood that any element of any one embodiment is considered to be disclosed to be incorporated with any other embodiment. The above-described embodiments illustrate the scope of the disclosure but do not restrict the scope of the disclosure.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2014 1 0024419 | Jan 2014 | CN | national |
| Number | Name | Date | Kind |
|---|---|---|---|
| 8846437 | Singh et al. | Sep 2014 | B2 |
| 9136117 | Li et al. | Sep 2015 | B2 |
| 20030036332 | Talin | Feb 2003 | A1 |
| 20040085010 | Takeuchi | May 2004 | A1 |
| 20050116214 | Mammana | Jun 2005 | A1 |
| 20050145835 | Yoo | Jul 2005 | A1 |
| 20060138933 | Yoo | Jun 2006 | A1 |
| 20060186786 | Iwamatsu | Aug 2006 | A1 |
| 20060291905 | Hirakawa | Dec 2006 | A1 |
| 20070018552 | Cho | Jan 2007 | A1 |
| 20080211401 | Nakada | Sep 2008 | A1 |
| 20080248310 | Kim | Oct 2008 | A1 |
| 20100039014 | Kim | Feb 2010 | A1 |
| 20100215402 | Nagaoka | Aug 2010 | A1 |
| 20110169276 | Akamatsu | Jul 2011 | A1 |
| 20110221328 | Nemanich | Sep 2011 | A1 |
| 20110254431 | Hirakawa | Oct 2011 | A1 |
| 20120074874 | Hirata | Mar 2012 | A1 |
| 20150206691 | Liu | Jul 2015 | A1 |
| 20150206692 | Liu | Jul 2015 | A1 |
| 20150206693 | Liu | Jul 2015 | A1 |
| 20150206694 | Liu | Jul 2015 | A1 |
| 20150206695 | Liu | Jul 2015 | A1 |
| 20150206696 | Liu | Jul 2015 | A1 |
| 20150206697 | Liu | Jul 2015 | A1 |
| 20150206699 | Liu | Jul 2015 | A1 |
| Number | Date | Country |
|---|---|---|
| 100530744 | Aug 2009 | CN |
| 201222863 | Jun 2012 | TW |
| 518632 | Jan 2013 | TW |
| 201314986 | Apr 2013 | TW |
| 201339087 | Oct 2013 | TW |
| Number | Date | Country | |
|---|---|---|---|
| 20150206689 A1 | Jul 2015 | US |
