Claims
- 1. A method of fabricating a transmission mode gallium arsenide electron emitter comprising the steps of:
- preparing a p-doped gallium arsenide seed crystal for epitaxial growth;
- epitaxially growing an n-doped gallium aluminum arsenide etch stop layer onto the gallium arsenide prepared crystal;
- epitaxially growing a p-doped gallium aluminum arsenide passivating window layer onto said etch stop layer;
- epitaxially growing a p-doped gallium arsenide emitting layer onto said passivating window layer;
- preferentially etching away the gallium arsenide seed crystal from the etch stop layer in a desired active region while leaving a mechanical support ring around the periphery of the device; and
- applying ohmic contact means to the emitter layer for effecting a photocathode structure.
- 2. The photocathode resulting from the practice of the fabrication technique of claim 1.
- 3. The method of claim 1 wherein the seed crystal, the etch stop layer and the passivating window are all preferentially etched to provide a desired active region on one surface of the emitter layer while leaving a plural layered mechanical support ring around the periphery of the emitter layer; and
- ion implanting the desired active region of the emitter layer for effecting the minimization of backsurface recombination velocity;
- whereby the responsive bandwidth of the photocathode is broadened.
- 4. The photocathode resulting from the practice of the fabrication technique of claim 3.
Government Interests
The invention described herein may be manufactured, used, and licensed by or for the Government for governmental purposes without the payment to us of any royalty thereon.
US Referenced Citations (7)