ELECTRON EMITTER

Abstract

Provided is a piezoelectric-film-type electron emitter of high durability exhibiting suppressed reduction in electron emission quantity, which reduction would otherwise occur with repeated use of the electron emitter. The electron emitter includes a substrate, a lower electrode, an emitter layer, and an upper electrode. The upper electrode has a plurality of openings, and an emitter section located on the top surface of the emitter layer is exposed through the openings to a reduced-pressure atmosphere. The electron emitter is configured so that when a pulse drive voltage Va is applied between the lower electrode and the upper electrode, electrons are accumulated on the emitter section, and then the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of high oxidation number which can serve as an oxidizing agent by being converted into an oxide of the transition metal of lower oxidation number.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

Various other objects, features, and many of the attendant advantages of the present invention will be readily appreciated as the same becomes better understood with reference to the following detailed description of the preferred embodiments when considered in connection with the accompanying drawings, in which:

FIG. 1 is a cross-sectional view schematically showing a display to which an electron emitter according to an embodiment of the present invention is applied;

FIG. 2 is an enlarged cross-sectional view showing essential portions of the electron emitter of FIG. 1;

FIG. 3 shows an equivalent circuit of the electron emitter of FIG. 1;

FIG. 4 shows another equivalent circuit of the electron emitter of FIG. 1;

FIG. 5 is a diagram showing the waveform of a drive voltage Va applied to the electron emitter of FIG. 1;

FIGS. 6A to 6C are schematic representations for explaining operation of the electron emitter of FIG. 1;

FIGS. 7A to 7C are schematic representations for explaining operation of the electron emitter of FIG. 1; and

FIG. 8 shows the Q-V hysteresis of a dielectric material.

Claims

1. An electron emitter comprising: an emitter layer which comprises a primary component comprising a ferroelectric composition represented by the following formula (I): PbxSrpLaq(Mgy/3Nb2/3)aTibZrcO3  (I)

2. An electron emitter according to claim 1, wherein the transition metal is at least one of manganese, iron, chromium, cobalt, tungsten, and molybdenum.

3. An electron emitter according to claim 2, wherein the ferroelectric composition contains at least one of silicon oxide, nickel oxide, and cerium oxide.

4. An electron emitter comprising: an emitter layer which comprises a primary component comprising a ferroelectric composition, and an additional component comprising a transition metal oxide of high oxidation number which can serve as an oxidizing agent by being converted into an oxide of the transition metal of lower oxidation number, the emitter layer having an emitter section provided in a reduced-pressure atmosphere;a first electrode provided in the vicinity of the emitter section of the emitter layer; anda second electrode provided on the emitter layer, the electron emitter being configured so that when a predetermined driving electric field is applied to the emitter section through application of a predetermined drive voltage between the first electrode and the second electrode, electrons are emitted from the emitter section toward the reduced-pressure atmosphere.

5. An electron emitter according to claim 4, wherein the ferroelectric composition contains a lead magnesium niobate-lead zirconate-lead titanate ternary solid solution composition.

6. An electron emitter according to claim 5, wherein lead contained in the ferroelectric composition is partially substituted by lanthanum and/or strontium.

7. An electron emitter according to claim 6, wherein the ferroelectric composition contains at least one of silicon oxide, nickel oxide, and cerium oxide.

8. An electron emitter according to claim 7, wherein the transition metal is at least one of manganese, iron, chromium, cobalt, tungsten, and molybdenum.