Patent Application
20090153014
1. Field of the Invention
The present invention relates to an electron-emitting device, an electron source, and an image display apparatus.
2. Description of the Related Art
Electron-emitting devices include a field emission type (FE type) electron-emitting device and a surface conduction type electron-emitting device.
The FE type electron-emitting device is a device that applies a voltage between a cathode electrode (and an electron-emitting film arranged thereon) and a gate electrode to elicit electrons from the cathode electrode (or the electron-emitting film) by the voltage (electric field) into a vacuum. Thus, an operating electric field greatly depends on a work function of the cathode electrode (electron-emitting film) to be used and a shape thereof. It is generally believed that a cathode electrode (electron-emitting film) with a small work function needs to be selected.
Conventionally, an electron-emitting device capable of emitting electrons in a low electric field is desired and also an emitted electron beam that focuses is desired (Naturally, an easy manufacturing process is also desired).
Diamond whose surface is terminated with hydrogen is a typical material having a negative electron affinity. An electron-emitting device using the surface of diamond having a negative electron affinity as an electron-emitting surface is disclosed in Japanese Patent Application Laid-Open (JP-A) No. 9-199001, the specification of U.S. Pat. No. 5,283,501, the specification of U.S. Pat. No. 5,180,951, and V. V. Zhinov, J. Liu et al., “Environmental effect on the electron emission from diamond surfaces”, J. Vac. Sci. Technol., B16 (3), May/June 1998, pp. 1188-1193.
However, it is difficult to form a film of diamond having a uniform thickness in a large area, producing a problem in a process of manufacturing an electron-emitting device. It is also difficult to make surface roughness of a diamond film smaller and thus, a problem of emitted electrons being broadened arises. Thus, electron-emitting devices using a thin film of diamond-like carbon or amorphous carbon are under development, but there is a problem that such devices are hard to drive due to a high electric field for electron emission.
A technique to form a dipole layer on the surface of an electron-emitting film is disclosed in Japanese Patent Application Laid-Open (JP-A) No. 2005-26209 as a conventional art in view of the above problems. With a dipole layer formed on the surface of an electron-emitting film, it becomes possible for the electron-emitting device to emit electrons in a low electric field.
An electron-emitting device having the dipole layer is considered to have an effect according to a magnitude of polarization of the dipole layer.
Thus, an object of the present invention is to provide a field emission type electron-emitting device that realizes electron emission in a lower electric field, can emit electrons at a low voltage with a high degree of efficiency, and whose manufacturing process is easy, an electron source, and an image display apparatus.
To achieve the above object, an electron-emitting device according to the present invention is an electron-emitting device having a cathode electrode, an insulating film provided on the cathode electrode, and a dipole layer provided on the insulating film, wherein the dipole layer is formed by terminating the insulating film with an NH group.
Also, an electron-emitting device according to the present invention is an electron-emitting device having a cathode electrode and an insulating film provided on the cathode electrode and formed from material having carbon as a main component, wherein a surface of the insulating film is terminated with an NH group.
Also, an electron source according to the present invention includes a plurality of the electron-emitting devices.
Also, an image display apparatus according to the present invention includes the electron source and a light emitting member that emits light by irradiation with electrons.
According to the present invention, a field emission type electron-emitting device that realizes electron emission in a lower electric field, can emit electrons at a low voltage with a high degree of efficiency, and whose manufacturing process is easy, an electron source, and an image display apparatus can be provided.
Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to attached drawings.
A preferred embodiment of the present invention will exemplarily be described below in detail with reference to drawings. However, if not specifically mentioned, sizes, materials, shapes, relative configuration thereof and the like of components described in the embodiment do not limit the scope of the present invention to those described only.
A method of manufacturing an electron-emitting device will be described below in detail using
(Step 1)
First, the cathode electrode 102 is formed on a substrate whose surface is sufficiently cleaned. The substrate (the substrate 101) may be selected from quartz glass, glass whose impurity content such as Na is reduced, soda lime glass, a layered body obtained by forming SiO2 on a silicon substrate or the like by a sputtering method, and an insulating substrate of ceramic such as alumina. Roughness of the surface of the substrate 101 is preferably smaller than 1/10 of a thickness of the substrate 101 in RMS (Root Mean Square) notation.
The cathode electrode 102 generally has conductivity and is formed by general vacuum film formation technique such as the evaporation method and sputtering method, or photolithography technique. Material of the cathode electrode 102 is suitably selected from metals, alloys and the like. Metals to be used include, for example, Be, Mg, Ti, Zr, Hf, V, Nb, Ta, Mo, W, Al, Cu, Ni, Cr, Au, Pt, and Pd, and alloys to be used include those alloys generated by these metals. The thickness of the cathode electrode 102 is set in the range of several tens of nm to several mm and preferably in the range of several hundreds of nm to several μm. Roughness of the surface of the cathode electrode 102 is preferably smaller than 1/10 of the thickness of the cathode electrode 102 in RMS notation. More specifically, roughness of the surface of the cathode electrode 102 is preferably 1 nm or less in RMS notation. Also, the surface of the cathode electrode 102 and that of the substrate 101 are preferably parallel to each other.
(Step 2)
Next, the insulating film 103 is formed on the cathode electrode. The insulating film 103 is formed by general vacuum film formation technique such as the evaporation method and sputtering method, or photolithography technique. The material of the insulating film 103 is preferably a material having carbon as a main component such as carbon and carbon compounds, but need not be limited to materials having carbon as a main component. The insulating film 103 may contain both carbon and carbon compounds. The insulating film 103 preferably has conductive particles dispersed and located therein or contains conductive particles. Metallic particles are preferably used as conductive particles. The size of conductive particles is set in the range of 1 nm to 10 nm and preferably set to about several nm. Materials of conductive particles to be used include metals such as Be, Mg, Mn, Ti, Zr, Hf, V, Nb, Ta, Mo, W, Al, Cu, Ni, Cr, Co, Fe, Ni, Au, Pt, and Pd, or alloys generated by using these metals. The material having carbon as a main component is suitably selected, for example, from diamond-like carbon and amorphous carbon. These are preferable because they contain sp3 carbon. The thickness of the insulating film 103 is set in the range of 20 nm or less and preferably set in the range of 10 nm or less. Roughness of the surface of the insulating film 103 is preferably smaller than 1/10 of the thickness of the insulating film 103 in RMS notation. If metal is dispersed inside the insulating film 103, the thickness of the insulating film 103 is defined to be the smallest value of values obtained by subtracting the thickness of the metal from the overall thickness.
(Step 3)
Next, the surface of the insulating film 103 is terminated with an NH group. The method of terminating with an NH group will be described using
Plasma can be suitably selected from high-frequency plasma, remote plasma, and microwave plasma. The treatment gas inlet A and the treatment gas inlet B are used to introduce a treatment gas. In the present embodiment, the treatment gas is suitably selected so that both hydrogen atoms and nitrogen atoms are contained such as a gas mixture of hydrogen and nitrogen and that of nitrogen and a hydrocarbon-based gas. Gases containing hydrogen atoms or nitrogen atoms include, for example, N2, NH4, H2, CH4, C2H4, and C2H2. If a treatment gas contains hydrogen atoms and nitrogen atoms, the treatment gas may not be a gas mixture. The treatment gas may be diluted by an inert gas. With the treatment gas containing both hydrogen atoms and nitrogen atoms, the surface of the insulating film 103 is terminated with an NH group.
The sample (device) may be heated by the substrate heating heater 410. The surface of the insulating film 103 can be terminated with an NH group only by heating the device in a treatment gas.
A dipole layer 104 is formed on the insulating film by the termination treatment.
An electron-emitting device can be produced by the above steps.
The method of manufacturing an electron-emitting device will be described below in detail using
(Step 1)
First, the cathode electrode 202 is formed on a substrate whose surface is sufficiently cleaned. The substrate (the substrate 201) may be selected from quartz glass, glass whose impurity content such as Na is reduced, soda lime glass, a layered body obtained by forming SiO2 on a silicon substrate or the like by a sputtering method, and an insulating substrate of ceramic such as alumina. Roughness of the surface of the substrate 201 is preferably smaller than 1/10 of a thickness of the substrate 201 in RMS (Root Mean Square) notation.
The cathode electrode 202 generally has conductivity and is formed by general vacuum film formation technique such as the evaporation method and sputtering method, or photolithography technique. Material of the cathode electrode 202 is suitably selected from metals, alloys and the like. Metals to be used include, for example, Be, Mg, Ti, Zr, Hf, V, Nb, Ta, Mo, W, Al, Cu, Ni, Cr, Au, Pt, and Pd, and alloys to be used include those alloys generated by these metals. The thickness of the cathode electrode 202 is set in the range of several tens of nm to several mm and preferably in the range of several hundreds of nm to several μm. Roughness of the surface of the cathode electrode 202 is preferably smaller than 1/10 of the thickness of the cathode electrode 202 in RMS notation. More specifically, roughness of the surface of the cathode electrode 202 is preferably 1 nm or less in RMS notation. Also, the surface of the cathode electrode 202 and that of the substrate 201 are preferably parallel to each other.
(Step 2)
Next, the insulating film 203 is formed on the cathode electrode. The insulating film 203 is formed by general vacuum film formation technique such as the evaporation method and sputtering method, or photolithography technique. The material of the insulating film 203 is preferably a material having carbon as a main component such as carbon and carbon compounds, but need not be limited to materials having carbon as a main component. The insulating film 203 may contain both carbon and carbon compounds. The insulating film 203 preferably has conductive particles dispersed and located therein or contains conductive particles. Metallic particles are preferably used as conductive particles. The size of the conductive particles is set in the range of 1 nm to 10 nm and preferably set to about several nm. Materials of conductive particles to be used include metals such as Be, Mg, Mn, Ti, Zr, Hf, V, Nb, Ta, Mo, W, Al, Cu, Ni, Cr, Co, Fe, Ni, Au, Pt, and Pd, or alloys generated by using these metals. The material having carbon as a main component is suitably selected, for example, from diamond-like carbon and amorphous carbon. These are preferable because they contain sp3 carbon. The thickness of the insulating film 203 is set in the range of 20 nm or less and preferably set in the range of 10 nm or less. Roughness of the surface of the insulating film 203 is preferably smaller than 1/10 of the thickness of the insulating film 203 in RMS notation. If metal is dispersed inside the insulating film 203, the thickness of the insulating film 203 is defined to be the smallest value of values obtained by subtracting the thickness of the metal from the overall thickness.
(Step 3)
Next, the insulating layer 204 is deposited. The insulating layer 204 is formed by a general vacuum film formation method such as the sputtering method, the CVD method, or the vacuum evaporation method. The thickness of the insulating layer 204 is set in the range of several nm to several μm and preferably selected from the range of 10 nm to 100 nm. The material of the insulating layer 204 is preferably a material with high voltage tightness capable of withstanding a high electric field such as SiO2, SiN, Al2O3, CaF, and undoped diamond.
(Step 4)
Next, the gate electrode 205 is deposited on the insulating layer 204. The gate electrode 205 has, like the cathode electrode 202, conductivity and is formed by general vacuum film formation technique such as the evaporation method and sputtering method, or photolithography technique. Material of the gate electrode 205 is suitably selected from metals or the like. Metals to be used include, for example, Be, Mg, Ti, Zr, Hf, V, Nb, Ta, Mo, W, Al, Cu, Ni, Cr, Au, Pt, and Pd, and alloys to be used include those alloys generated by these metals. The thickness of the gate electrode 205 is set in the range of several nm to several tens of μm and preferably in the range of several tens of nm to several μm.
(Step 5)
Next, a mask pattern 206 is formed by photolithography technique.
(Step 6)
Next, the mask pattern 206 is used as a mask to remove a portion of the gate electrode 205 and a portion of the insulating layer 204 by drying etching.
(Step 7)
Next, a portion of the insulating layer 204 is further removed by wet etching. It is preferable to perform treatment by the wet etching by using a solvent that makes an etching rate of the insulating layer 204 higher than that of the gate electrode 205 and the insulating film 203 and also does not degrade the insulating film 203.
(Step 8)
Next, the surface of the insulating film 203 is terminated with an NH group. The method of terminating with an NH group will be described using
Plasma can be suitably selected from high-frequency plasma, remote plasma, and microwave plasma. The treatment gas inlet A and the treatment gas inlet B are used to introduce a treatment gas. In the present embodiment, the treatment gas is suitably selected so that both hydrogen atoms and nitrogen atoms are contained such as a gas mixture of hydrogen and nitrogen and that of nitrogen and a hydrocarbon-based gas. Gases containing hydrogen atoms or nitrogen atoms include, for example, N2, NH4, H2, CH4, C2H4, and C2H2. If a treatment gas contains hydrogen atoms and nitrogen atoms, the treatment gas may not be a gas mixture. The treatment gas may be diluted by an inert gas. With the treatment gas containing both hydrogen atoms and nitrogen atoms, the surface of the insulating film 203 is terminated with an NH group.
The sample (device) may be heated by the substrate heating heater 410. The surface of the insulating film 203 can be terminated with an NH group only by heating the device (substrate 201) in a treatment gas.
A dipole layer 207 is formed on the insulating film by the termination treatment.
Thus, an electron-emitting device according to the present embodiment can be produced by a very simple manufacturing process.
By setting the electron-emitting device produced in this manner inside a vacuum chamber 301 as shown in
A driving principle of an electron-emitting device according to the present embodiment will be described using
The thickness of the insulating film 72 can be determined by the driving voltage, and is preferably determined to be 20 nm or less and particularly preferably 10 nm or less. A lower limit of thickness of insulating film 72 may be a value so that a barrier (the insulating film 72 and a vacuum barrier) is formed to be tunneled the electrons 76 supplied from the cathode electrode 71 when the electron-emitting device is driving, but the lower limit is preferably set at 1 nm or more from the viewpoint of film formation reproducibility.
Thus, in an electron-emitting device according to the present embodiment, with the surface of the insulating film 72 always showing a positive electron affinity, a definite ratio of ON/OFF of amounts of electron emission when selected and not selected can be ensured.
In the example in
Accordingly, as shown in
Since, as described above, the vacuum barrier 74 is also lowered together with application of the driving voltage V [V] and also the spatial distance thereof is similarly shortened like the insulating film 72, the vacuum barrier 74 can also be made to be tunneled through. Accordingly, electron emission into a vacuum is realized.
An electron-emitting device according to the present embodiment and conventional art will be compared below.
Japanese Patent Application Laid-Open No. 2005-26209 discloses a technique to positively polarize the hydrogen atom (δ+) slightly by terminating the surface of the insulating film 72 with the hydrogen atom 82. Accordingly, atoms (for example, carbon atoms) at the surface of the insulating film 72 are negatively polarized (δ−) slightly to form the dipole layer (electric double layer) 80. In the present embodiment, a dipole generated between a nitrogen atom and a hydrogen atom, that is, a dipole whose polarization is larger than that generated between a carbon atom and a hydrogen atom is formed by terminating the surface of the insulating film 72 with two atoms of a nitrogen atom and a hydrogen atom. Thus, the band of the insulating film 72 is bent more sharply. Accordingly, the electron-emitting device becomes capable of emitting electrons at a lower driving voltage.
Japanese Patent Application Laid-Open (JP-A) No. 2002-274819 discloses an amorphous or microcrystalline carbon nitride film having an NH termination on a conductive whisker. Since the surface of the insulating film of an electron-emitting device according to the present embodiment is flat, electrons that focus can be emitted. Thus, a high-resolution image display apparatus can be provided. Moreover, semiconductor processes can be used, because the insulating film is plane, and therefore, manufacturing costs can be reduced.
<Application Examples>
Application examples of an electron-emitting device according to the present embodiment will be described below. An electron source can be constituted, for example, by arranging a plurality of electron-emitting devices according to the present embodiment on a substrate. Then, using the electron source, an image display apparatus can be constituted.
(Electron Source)
Various kinds of arrangement of electron-emitting devices are adopted. As an example, electron-emitting devices are arranged in the X direction and the Y direction in a matrix form. One side of electrodes of a plurality of electron-emitting devices arranged in the same row is commonly connected to a wiring in the X direction and the other side of electrodes of a plurality of electron-emitting devices arranged in the same column is commonly connected to a wiring in the Y direction. This is called a simple matrix arrangement. An electron source in the simple matrix arrangement will be described below using
In
M wirings Dx1, Dx2, . . . , Dxm, are the X-direction wirings 502, and can be constituted by conductive metal formed by using the vacuum evaporation method, printing method, sputtering method or the like. The material, thickness, and width of a wiring are suitably designed. N wirings Dy1, Dy2, . . . , Dyn, are the Y-direction wirings 503, and are formed in the same as the X-direction wiring 502. An interlayer insulating layer (not shown) is provided between the m X-direction wirings 502 and the n Y-direction wirings 503 to electrically separate the X-direction wirings 502 and the Y-direction wirings 503 (numbers n and m are positive integers).
The interlayer insulating layer (not shown) is constituted by SiO2 or the like formed by using the vacuum evaporation method, printing method, sputtering method or the like. The interlayer insulating layer is formed in a desired shape all over the electron source substrate 501 forming the X-direction wirings 502 or in a portion thereof. The thickness, material, and manufacturing method of the interlayer insulating layer are suitably designed so that a potential difference in intersections of the X-direction wirings 502 and the Y-direction wirings 503 can be withstood. The X-direction wirings 502 and the Y-direction wirings 503 are each pulled out as external terminals.
The electron-emitting device 504 has a pair of electrodes (a gate electrode and a cathode electrode). In the example in
A portion or all of component elements of the material constituting the X-direction wirings 502 and the Y-direction wirings 503, that constituting the wiring, and that constituting the pair of electrodes may be the same or different from one another. These materials are suitably selected, for example, from the material of the device electrodes. If the material constituting the device electrodes and wiring material are the same, a wiring connected to a device electrode can be considered as a device electrode.
A scanning signal application means (not shown) is connected to the X-direction wiring 502. The scanning signal application means applies a scanning signal to the electron-emitting device 504 connected to the selected X-direction wiring. On the other hand, a modulating signal generation means (not shown) is connected to the Y-direction wiring 503. The modulation signal generation means applies a modulation signal modulated in accordance with an input signal to each column of the electron-emitting device 504. The driving voltage applied to each electron-emitting device is supplied as a difference voltage between the scanning signal and modulation signal applied to the device.
(Image Display Apparatus)
In the above constitution, individual devices are selected using a simple matrix wiring and can be driven independently. An image display apparatus constituted using the electron source will be described using
In
In the image display apparatus, a voltage is applied to each electron-emitting devices 615 via the container external terminals Dox1 to Doxm and Doy1 to Doyn. Each of the electron-emitting devices 615 emits electrons in accordance the applied voltage.
The emitted electrons are accelerated by applying a high voltage to the metal back 605 or a transparent electrode (not shown) via a high-voltage terminal 614.
The accelerated electrons collide against the phosphor film 604 to form an image by light emission being generated.
In addition to a display apparatus of TV broadcasting and a display apparatus of a videoconference system, computer and the like, an image display apparatus according to the present embodiment can also be used as an image formation apparatus as an optical printer constituted by using a photosensitive drum or the like.
Examples of the present invention will be described below in detail.
A concrete method of manufacturing an electron-emitting device in the present example will be described below in detail using
(Step 1)
First, quartz (SiO2) as the substrate 101 was adequately cleaned and a film of Pt as the cathode electrode 102 was formed to a thickness of 200 nm on the substrate 101 by the sputtering method.
(Step 2)
Next, a DLC film containing plenty of Pt particles was formed on the cathode electrode 102 as the insulating film 103 using the co-sputtering method. The thickness of the insulating film 103 was set at about 10 nm and Pt concentrations in the insulating film 103 were about 20%.
(Step 3)
Next, the surface of the insulating film 103 was terminated with an NH group using the apparatus in
An electron-emitting device in the present example was produced by undergoing the above steps.
Electron emission characteristics of the produced electron-emitting device were measured by applying a voltage between the anode electrode and cathode electrode in the apparatus shown in
A concrete method of manufacturing an electron-emitting device in the present example will be described below in detail using
(Step 1)
First, quartz (SiO2) as the substrate 101 was adequately cleaned and a film of Pt as the cathode electrode 102 was formed to a thickness of 200 nm on the substrate 101 by the sputtering method.
(Step 2)
Next, a DLC film containing plenty of Co particles was formed on the cathode electrode 102 as the insulating film 103 using the co-sputtering method. The thickness of the insulating film 103 was set at about 10 nm and Co concentrations in the insulating film 103 were about 20%.
(Step 3)
Next, the surface of the insulating film 103 was terminated with an NH group using the apparatus in
An electron-emitting device in the present example was produced by undergoing the above steps.
Electron emission characteristics of the produced electron-emitting device were measured by applying a voltage between the anode electrode and cathode electrode in the apparatus shown in
A concrete method of manufacturing an electron-emitting device in the present example will be described below in detail using
(Step 1)
First, quartz (SiO2) as the substrate 101 was adequately cleaned and a film of Pt as the cathode electrode 102 was formed to a thickness of 200 nm on the substrate 101 by the sputtering method.
(Step 2)
Next, a DLC film was formed on the cathode electrode 102 using the filament CVD method. Then, Co particles of 1 atm % were implanted into the DLC film using an ion-implantation technique. The insulating film 103 was produced by the step. The thickness of the insulating film 103 was set at about 10 nm.
(Step 3)
Next, the surface of the insulating film 103 was terminated with an NH group using the apparatus in
An electron-emitting device in the present example was produced by undergoing the above steps.
Electron emission characteristics of the produced electron-emitting device were measured by applying a voltage between the anode electrode and cathode electrode in the apparatus shown in
A concrete method of manufacturing an electron-emitting device in the present example will be described below in detail using
(Step 1)
First, quartz (SiO2) as the substrate 201 was adequately cleaned and a film of Pt as the cathode electrode 202 was formed to a thickness of 200 nm on the substrate 201 by the sputtering method.
(Step 2)
Next, a DLC film containing plenty of Co particles was formed on the cathode electrode 202 as the insulating film 203 using the co-sputtering method. The thickness of the insulating film 203 was set at about 10 nm and Co concentrations in the insulating film 203 were about 25%.
(Step 3)
Next, a film of SiO2 as the insulating layer 204 was formed to a thickness of about 1,000 nm on the insulating film 203 by the plasma CVD method using SiH4 and N2O as material gases.
(Step 4)
Next, a film of Pt as the gate electrode 205 was formed to a thickness of 100 nm on the insulating layer 204 by the sputtering method.
(Step 5)
Next, a positive type photo resist (OFPR5000/manufactured by Tokyo Ohka Kogyo Co., Ltd.) was spin-coated by the photolithography method and a photo-mask pattern was exposed and developed to form the mask pattern 206 of resist having an opening of 5 μm in diameter.
(Step 6)
Next, a portion of the gate electrode 205 and a portion of the insulating layer 204 were removed by dry etching. Removal of a portion of the gate electrode 205 (Pt) was carried out under conditions of an Ar gas as an etching gas, 200 W of etching power, and 1 Pa of etching pressure. Removal of a portion of the insulating layer 204 was carried out under conditions of a gas mixture of CF4 and H2 as an etching gas, 150 W of etching power, and 1.5 Pa of etching pressure. The gate electrode corresponding to the position of the opening of the resist was removed by the present step. The insulating layer 204 was etched until the thickness thereof was almost halved. Like the gate electrode 205, only the insulating layer 204 corresponding to the position of the opening of the resist was removed.
(Step 7)
Next, a remaining mask pattern was removed by a peeling liquid (peeling liquid 104/manufactured by Tokyo Ohka Kogyo Co., Ltd.). Then, a portion of the insulating layer 204 was further removed by soaking the insulating layer 204 (SiO2) in BHF. After the wet etching, the device was cleaned with water for 10 minutes. An opening of the gate electrode and insulating layer was formed at the position of the opening of the resist by the present step. Also, the insulating film 203 was exposed in the opening by the present step.
(Step 8)
Next, the surface of the insulating film 203 was terminated with an NH group using the apparatus in
An electron-emitting device in the present example was produced by undergoing the above steps.
The electron-emitting device produced in the present example was arranged in a vacuum chamber, as shown in
An image display apparatus using the electron-emitting device in Example 4 was provided. As shown in
The present invention can provide, as described above, an electron-emitting device capable of emitting electrons at a low threshold. Further, the present invention can provide an electron-emitting device capable of emitting electrons at a low voltage with a high degree of efficiency and whose manufacturing process is easy. Moreover, an electron source and an image display apparatus superior in performance can be realized by applying an electron-emitting device of the present invention.
While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.
This application claims the benefit of Japanese Patent Application No. 2007-323177, filed on Dec. 14, 2007, which is thereby incorporated by reference herein in its entirety.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2007-323177 | Dec 2007 | JP | national |
