Claims
- 1. An electron emitting device for causing electron emission by a current supply in a coarse thin resistor film, wherein said coarse thin resistor film is composed of at least a coarse thin silicon film provided thereon with, in succession, a first layer formed of a silicide of a work function reducing material and a second layer formed of an oxide of said work function reducing material, said work function reducing material being capable of reducing a work function of the coarse thin resistor film.
- 2. An electron emitting device according to claim 1, wherein said work function reducing material is an alkali metal.
Priority Claims (2)
Number |
Date |
Country |
Kind |
61-156265 |
Jul 1986 |
JPX |
|
61-210588 |
Sep 1986 |
JPX |
|
Parent Case Info
This application is a continuation, of application Ser. No. 08/213,521 filed Mar. 16, 1994, now abandoned, which is a divisional application of Ser. No. 874,218 filed Apr. 27, 1992, now U.S. Pat. No. 5,527,050, which is a continuation of application Ser. No. 525,314, filed May 21, 1990, abandoned, which is a continuation of application Ser. No. 370,125, filed Jun. 20, 1989, abandoned, which is a continuation of application Ser. No. 069,215, filed Jul. 2, 1987, abandoned.
US Referenced Citations (6)
Non-Patent Literature Citations (2)
Entry |
"Electrical Conduction and Electron Emissionof Discontinuous Thin Films" by G. Dittmer; An International Journal on Their Science and Technology; vol. 9 (1972); pp. 317-328. |
"Interaction of Al layers with Polgingstalline Si"; K. Nakamura et al.; Journal of Applied Physics, vol. 46, No. 11; Nov. 1975, pp. 4678-4684. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
874218 |
Apr 1992 |
|
Continuations (4)
|
Number |
Date |
Country |
Parent |
213521 |
Mar 1994 |
|
Parent |
525314 |
May 1990 |
|
Parent |
370125 |
Jun 1989 |
|
Parent |
69215 |
Jul 1987 |
|