The present application claims priority to Japanese Patent Application No. 2012-037547 filed on Feb. 23, 2012, the entire contents of this application being incorporated herein by reference in its entirety.
The technical field relates to electronic components and methods of manufacturing the electronic components. More specifically, the technical field relates to electronic components including a multilayer body formed by stacking a plurality of insulating layers, and to methods of manufacturing the electronic components.
Examples of known existing electronic components include an electronic component disclosed in Japanese Unexamined Patent Application Publication No. 2000-236157. In the electronic component disclosed in Japanese Unexamined Patent Application Publication No. 2000-236157, a plurality of insulating layers are stacked on an insulating substrate. A plurality of helical coil conductors are stacked together with the insulating layers. Via hole conductors extending through the insulating layers connect the plurality of the helical coil conductors to one another. The electronic component disclosed in Japanese Unexamined Patent Application Publication No. 2000-236157 is manufactured using a photolithography method.
The present disclosure provides an electronic component in which the occurrence of disconnections between line conductor layers and via hole conductor can be suppressed and a method of manufacturing the electronic component.
An electronic component according to an embodiment of the present disclosure includes: a multilayer body formed by stacking a plurality of insulating layers including a first insulating layer and a second insulating layer; a conductor layer provided on the first insulating layer; a line conductor layer provided on the second insulating layer, which is provided on an upper side of the first insulating layer in a stacking direction; and a via hole conductor that connects an end portion of the line conductor layer to the conductor layer and that extends through the second insulating layer in the stacking direction. In the via hole conductor, a connection surface connected to the line conductor layer is formed of a circular portion and a protrusion. The protrusion protrudes from the circular portion in a first direction in which the line conductor layer extends from the end portion.
A method of manufacturing the electronic component described above includes: forming the first insulating layer; forming the conductor layer on the first insulating layer; forming, on the conductor layer, the second insulating layer in which the via hole connected to the conductor layer is formed; and forming the via hole conductor by filling a conductor into the via hole and forming the line conductor layer on the second insulating layer, using a photolithography method. In the forming of the second insulating layer, the via hole conductor having an upper end surface formed of a circular portion and a protrusion protruding from the circular portion in the first direction is formed.
Embodiments according to the present disclosure can suppress the occurrence of disconnections between line conductor layers and via hole conductor layers.
The inventors realized that in the electronic component disclosed in Japanese Unexamined Patent Application Publication No. 2000-236157, disconnections may occur between the via hole conductors and the coil conductor patterns.
The coil conductor pattern 502a is provided on the insulating layer 504a. The insulating layer 504b is provided on the coil conductor pattern 502a and the insulating layer 504a. The coil conductor pattern 502b is provided on the insulating layer 504b. The via hole conductor 500 extends through the insulating layer 504b in the stacking direction and connects the coil conductor pattern 502a and the coil conductor pattern 502b.
The via hole conductor 500 and the coil conductor pattern 502b described above are formed using a photolithography method. The via hole conductor 500 and the coil conductor pattern 502b shrink when the via hole conductor 500 and the coil conductor pattern 502b are dried. In particular, a portion at which the via hole conductor 500 and the coil conductor pattern 502b are connected to each other, which has a larger volume than other portions, considerably shrinks. As a result, the via hole conductor 500 shrinks in the thickness direction of the insulating layer 504b and, hence, becomes thinner than the insulating layer 504b. Consequently, disconnections may occur between the coil conductor pattern 502a and the via hole conductor 500 and between the via hole conductor 500 and the coil conductor pattern 502b.
Hereinafter, an electronic component and a method of manufacturing the electric component according to exemplary embodiments of the present disclosure that can address the above-described shortcoming will now be described with reference to the figures.
As illustrated in
The multilayer body 12 is shaped like a rectangular parallelepiped, and is formed by stacking rectangular insulating layers 15 and 16a to 16h (16) in this order from the positive z-axis direction side to the negative z-axis direction side, as illustrated in
The coil L includes coil conductor layers 18a to 18g, sometimes collectively referred to herein as coil conductor layers 18, and via hole conductors V1 to V6, sometimes collectively referred to herein as via hole conductors V. The coil conductor layers 18a to 18g, which are respectively provided on the insulating layers 16b to 16h, are line conductor layers revolving around the respective intersections of the diagonals of the insulating layers 16b to 16h, when viewed in plan from the z-axis direction.
A first end of the coil conductor layer 18a extends to the negative x-axis direction side end surface of the multilayer body 12. A second end of the coil conductor layer 18g extends to the positive x-axis direction side end surface of the multilayer body 12.
The via hole conductors V1 to V6 respectively extend through the insulating layers 16b to 16g in the z-axis direction and connect the corresponding ends of the coil conductor layers 18a to 18g that neighbor one another in the z-axis direction. In more detail, the via hole conductor V1 connects the second end of the coil conductor layer 18a to a first end of the coil conductor layer 18b. The via hole conductor V2 connects the second end of the coil conductor layer 18b to a first end of the coil conductor layer 18c. The via hole conductor V3 connects the second end of the coil conductor layer 18c to a first end of the coil conductor layer 18d. The via hole conductor V4 connects the second end of the coil conductor layer 18d to a first end of the coil conductor layer 18e. The via hole conductor V5 connects the second end of the coil conductor layer 18e to a first end of the coil conductor layer 18f. The via hole conductor V6 connects the second end of the coil conductor layer 18f to the first end of the coil conductor layer 18g. The coil L formed in the manner described above extends in the z-axis direction in a helical shape.
The external electrode 14a covers the negative x-axis direction side end of the multilayer body 12, and is connected to the first end of the coil conductor layer 18a. The external electrode 14b covers the positive x-axis direction side end of the multilayer body 12, and is connected to the second end of the coil conductor layer 18g. As a result, the coil L is connected between the external electrodes 14a and 14b.
The electronic component 10 has a configuration described below in order to suppress the occurrence of disconnections between the coil conductor layers 18 and the via hole conductors V. The via hole conductor V6 will be described below as an example.
The insulating layer 16g (second insulating layer) is stacked on the positive z-axis direction side of the insulating layer 16h (first insulating layer). The coil conductor layer 18g (conductor layer) is provided on the insulating layer 16h. The coil conductor layer 18g extends in the x-axis direction. The coil conductor layer 18f (line conductor) is provided on the insulating layer 16g. The coil conductor layer 18f extends in the x-axis direction. The first end of the coil conductor layer 18g and the second end of the coil conductor layer 18f are superposed with each other when viewed in plan from the z-axis direction.
The via hole conductor V6 connects the second end of the coil conductor layer 18f to the first end of the coil conductor layer 18g, and extends through the insulating layer 16g in the z-axis direction. Hereinafter, a surface of the via hole conductor V6 connected to the coil conductor layer 18f is called a connection surface S1.
The connection surface S1 is formed of a circular portion P1 and a protrusion P2. The circular portion P1 is shaped like a circle when viewed in plan from the z-axis direction. The protrusion P2, when viewed in plan from the z-axis direction, protrudes from the circular portion P1 in a direction in which the coil conductor layer 18f extends from the second end of the coil conductor layer 18f (i.e., the negative x-axis direction). The protrusion P2 is shaped like a triangle. The angle θ of the apex of the protrusion P2 is preferably between 15 degrees and 60 degrees inclusive. The optimal value of the angle θ is 30 degrees.
As a result of the connection surface S1 being formed of the circular portion P1 and the protrusion P2, the via hole conductor V6 has the shape of a protrusion P4 combined with a truncated cone P3. The truncated cone P3 has a shape whose diameter becomes smaller from the positive z-axis direction side to the negative z-axis direction side. The protrusion P4 has the shape of a triangular pyramid in which the amount of protrusion from the truncated cone P3 becomes smaller from the positive z-axis direction side to the negative z-axis direction side. In the embodiment shown in
Note that since the via hole conductors V1 to V5 can have the same shape as the via hole conductor V6, description thereof is not provided as it can be understood from the above description.
Hereinafter, an exemplary method of manufacturing the electronic component 10 will be described with reference to the figures.
First, an insulating layer 116h is formed using a photolithography method. Specifically, as illustrated in
Next, as illustrated in
Next, the coil conductor layer 18g is formed on the insulating layer 116h using, for example, a photo lithography method. Specifically, as illustrated in
Next, as illustrated in
Next, a portion of the conductor layer 118g which has not been hardened is removed using a developing solution. As a result, the coil conductor layer 18g is developed, as illustrated in
Next, an insulating layer 116g in which a via hole h6 connected to the coil conductor layer 18g is formed is formed on the coil conductor layer 18g using a photolithography method. Specifically, as illustrated in
Next, as illustrated in
Next, a portion of the insulating layer 116g which has not been hardened is removed using a development solution. As a result, referring to
Next, using a photolithography method, the via hole h6 is filled with a conductor, thereby forming the via hole conductor V6 having a diameter of 50 μm, and the coil conductor layer 18f is formed on the insulating layer 116g. Specifically, as illustrated in
Next, as illustrated in
Next, a portion of the conductor layer 118f which has not been hardened is removed using a development solution. As a result, the coil conductor layer 18f is developed as illustrated in
After that, by repeating the process steps illustrated in
Next, as illustrated in
Next, as illustrated in
Next, as illustrated in
Finally, as illustrated in
The electronic component 10 configured as described above and the method of manufacturing the electronic component 10 allow for suppression of the occurrence of disconnections between the coil conductor layers 18 and the via hole conductors V. In more detail, as illustrated in
Hence, the connection surface S1 of the via hole conductor V6 is formed of the circular portion P1 and the protrusion P2. The protrusion P2 protrudes in a direction in which the coil conductor layer 18f obtained by developing the conductor layer 118f extends. As a result, the via hole conductor V6 has the shape of the protrusion P4 combined with the truncated cone P3. Hence, even when the conductor layer 118f shrinks, connection between the protrusion P4 and the conductor layer 118f can be maintained. Consequently, disconnection between the conductor layer 118f and the via hole conductor V6 can be prevented from occurring.
In the electronic component 10, the angle θ of the apex of the protrusion P2 is preferably between 15 degrees and 60 degrees inclusive. As a result of the angle θ being 15 degrees or more, a developing solution is allowed to easily penetrate into the protrusion P4, and the protrusion P4 shaped like a triangular pyramid having a sufficiently large size is formed. As a result of the angle θ being 60 degrees or less, the diameter of the via hole conductors V is prevented from becoming too large. When the angle θ is larger than 60 degrees, a developing solution penetrates into the protrusion P4 too much and the protrusion P4 becomes too large. In this case, the length of the protrusion P4 becomes too large and the protrusion P4 may protrude from the coil conductor layer 18 and come in contact with another coil conductor layer 18. Hence, it is preferable that the angle θ be 60 degrees or less. Note that the optimal value of the angle θ is 30 degrees.
Although ways of suppressing disconnection may include forming the coil conductor layers 18 in such a manner as to have a large thickness in advance, when the ratio of the thickness of the insulating layers 16 in the z-axis direction to the thickness of the coil conductor layers 18 in the z-axis direction is 1.0 or less, the thickness of the insulating layers 16 in the z-axis direction becomes small. Hence, the distance between the coil conductor layers 18 becomes small and stray capacitance between the coil conductor layers 18 becomes large. As a result, the Q characteristics of the coil of the electronic component 10 are degraded. Consequently, in the electronic component 10, it is preferable that the ratio of the thickness of the insulating layers 16 in the z-axis direction to the thickness of the coil conductor layers 18 in the z-axis direction be larger than 1.0.
It is preferable that the thickness of the conductor layers 118 in the z-axis direction before sintering be larger than or equal to 6 μm. This is because when the thickness of the conductor layers 118 in the z-axis direction before sintering is smaller than 6 μm, it is difficult to form the coil conductor layers 18.
Hereinafter, a via hole conductor V6 according to a first exemplary modification will be described with reference to the figures.
When the coil conductor layer 18g extends in the y-axis direction and the coil conductor layer 18f extends in the x-axis direction, the via hole conductor V6 is provided in a corner formed by the coil conductor layers 18f and 18g. In this case, the protrusion P2 may face in a slanting direction with respect to the x-axis direction. As can be seen in
Hereinafter, a via hole conductor Va according a second exemplary modification and a via hole conductor Vb according to a third exemplary modification will be described with reference to the figures.
As illustrated in
The electronic component 10 configured as described above and the manufacturing method are not limited to the electronic component 10 and the manufacturing method according to the embodiments described above, and various modifications are possible within the scope of the disclosure.
The dimensions of the electronic component 10 are exemplary, and not limited to those described in the embodiments. Examples of the dimensions of the electronic component 10 will be described below.
The size of the electronic component 10: 0.2 mm×0.2 mm×0.6 mm, 0.5 mm×0.5 mm×1.0 mm
As described above, embodiments consistent with the present disclosure are useful in electronic components and methods of manufacturing them, and in particular have an advantage in suppression of disconnections between line conductor layers and via hole conductor layers.
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