The present invention is related to calibration of temperature sensitive devices, and more particularly, to an electronic device and a method for calibrating a temperature related scattering matrix of a temperature sensitive device.
In order to estimate an impedance of an output load, a scattering matrix (S-matrix) of a front-end device connected to the output load needs to be derived first. Related arts typically require a vector network analyzer (VNA) to directly probe the front-end device for estimating the S-matrix of the front-end device. However, utilizing the VNA to obtain information of the S-matrix during a mass production flow of electronic devices is time consuming for device testing. In addition, when the front-end device is temperature sensitive, the S-matrix may vary in response to temperature variation, and the estimation of the impedance of the output load may be inaccurate if the temperature is not fixed.
Thus, there is a need for a novel architecture and an associated method, to allow the S-matrix of the front-end device to be estimated and compensated under variant temperature without using the VNA.
An objective of the present invention is to provide an electronic device and a method for calibrating a temperature related scattering matrix of a temperature sensitive device, which can estimate the temperature related scattering matrix with corresponding temperature calibration and compensation.
At least one embodiment of the present invention provides an electronic device. The electronic device comprises a temperature sensitive device and a calibration kit, wherein the calibration kit is connected to an output port of the temperature sensitive device. The temperature sensitive device is configured to transmit a desired signal and receive a forward signal and a reverse signal in response to the desired signal. The calibration kit is configured to provide a switchable impedance. During a first phase, the electronic device operates in a first temperature, and multiple first calculation results are calculated according to the forward signal and the reverse signal by setting the switchable impedance to be multiple impedances, respectively. During a second phase, the electronic device operates in a second temperature, and multiple second calculation results are calculated according to the forward signal and the reverse signal by setting the switchable impedance to be the multiple impedances, respectively. In addition, a temperature related scattering matrix (S-matrix) of the temperature sensitive device is calibrated according to the multiple first calculation results and the multiple second calculation results.
At least one embodiment of the present invention provides a method for calibrating a temperature related S-matrix of a temperature sensitive device. The method comprises: utilizing the temperature sensitive device to transmit a desired signal and receive a forward signal and a reverse signal in response to the desired signal; utilizing a calibration kit connected to an output port of the temperature sensitive device to provide a switchable impedance; during a first phase, configuring the temperature sensitive device to operate in a first temperature, and calculating multiple first calculation results according to the forward signal and the reverse signal by setting the switchable impedance to be multiple impedances, respectively; during a second phase, configuring the temperature sensitive device to operates in a second temperature, and calculating multiple second calculation results according to the forward signal and the reverse signal by setting the switchable impedance to be the multiple impedances, respectively; and calibrating the temperature related S-matrix of the temperature sensitive device according to the multiple first calculation results and the multiple second calculation results.
The electronic device and the method provided by the embodiments of the present invention can estimate the S-matrix under at least two different temperatures, to thereby estimate the impact of the S-matrix due to temperature variation, and corresponding calibration terms can be applied to the S-matrix. In addition, the embodiments of the present invention will not greatly increase additional costs. Thus, the present invention can solve the problem of the related art without introducing any side effect or in a way that is less likely to introduce side effects.
These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
Certain terms are used throughout the following description and claims, which refer to particular components. As one skilled in the art will appreciate, electronic equipment manufacturers may refer to a component by different names. This document does not intend to distinguish between components that differ in name but not in function. In the following description and in the claims, the terms “include” and “comprise” are used in an open-ended fashion, and thus should be interpreted to mean “include, but not limited to . . . ”.
For a purpose of estimating an impedance on a node which is connected to the load device 50 without using a vector network analyzer (VNA), measurement can be performed on an input port of the temperature sensitive device 100 (e.g. a left-side port thereof shown in figures). A scattering matrix (S-matrix) from the input port of the temperature sensitive device 100 to the node connected to the load device 50 need to be derived first, and the impedance on the node connected to the load device 50 can be derived based on the measurement on the input port of the temperature sensitive device 100 and the S-matrix mentioned above. In practice, the BPF 120 is typically a temperature sensitive circuit, which makes the S-matrix mentioned above be temperature related. Thus, the present invention is aimed at estimating the impact on the S-matrix due to temperature variation, to thereby apply associated compensation term(s) to the S-matrix.
In this embodiment, the temperature sensitive device 100 is configured to transmit a desired signal and receive a forward signal and a reverse signal in response to the desired signal. In detail, the coupler 130 is configured to control signal transmission of the desired signal, the forward signal and the reverse signal. For example, the coupler 130 is configured to transmit the desired signal to the BPF 120 (e.g. from the input port P1 to the output port P2 of the coupler 130) and the DPDT switch 140 (which is connected to the coupled port P3 and the isolated port P4 of the coupler 130) and receive the forward signal (e.g. from the input port P1 to the coupled port P3 of the coupler 130) and the reverse signal from the BPF 120 (e.g. from the output port P2 to the isolated port P4 of the coupler 130) from the BPF 120. In addition, the OSL kit 110 is configured to provide a switchable impedance.
During a first phase, the electronic device 10 may operate in a first temperature, and multiple first calculation results may be calculated according to the forward signal and the reverse signal by setting the switchable impedance to be multiple impedances, respectively. During a second phase, the electronic device 10 may operate in a second temperature, and multiple second calculation results may be calculated according to the forward signal and the reverse signal by setting the switchable impedance to be the multiple impedances, respectively. Furthermore, a temperature related S-matrix of the temperature sensitive device 100 (which may be an example, of the S-matrix from the input port of the temperature sensitive device 100 to the node connected to the load device 50 mentioned above) can be calibrated according to the multiple first calculation results and the multiple second calculation results.
In this embodiment, the modem 170 is configured to generate the multiple first calculation results according to the forward signal and the reverse signal during the first phase and generate the multiple second calculation results according to the forward signal and the reverse signal during the second phase. In addition, the modem 170 may calibrate the temperature related S-matrix according to the multiple first calculation results and the multiple second calculation results. In detail, the TX path of the transceiver 160 may transmit the desired signal to the coupler 130, and the RX path of the transceiver 160 may receive the forward signal via the coupled port P3 of the coupler 130 and receive the reverse signal via the isolated port P4 of the coupler 130, to allow the modem 170 to receive the forward signal and the reverse signal via the transceiver 160. In addition, the DPDT switch 140 is configured to selectively connect the coupled port P3 of the coupler 130 to the RX path of the transceiver 160 or connect the isolated port P4 of the coupler 130 to the RX path of the transceiver 160. Thus, the transceiver 160 may receive the forward signal for the modem 170 when the DPDT switch 140 connects the coupled port P3 to the RX path of the transceiver 160, and the transceiver 160 may receive the reverse signal for the modem 170 when the DPDT switch 140 connects the isolated port P4 to the RX path of the transceiver 160.
As the multiple first calculation results are generated according to the forward signal and the reverse signal which are measured under the first temperature, a first S-matrix corresponding to the first temperature can be derived according to the multiple first calculation results (e.g. calculated according to the multiple first calculation results by the modem 170). In addition, as the multiple second calculation results are generated according to the forward signal and the reverse signal which are measured under the second temperature, a second S-matrix corresponding to the second temperature can be derived according to the multiple second calculation results (e.g. calculated according to the multiple second calculation results by the modem 170). Thus, the modem 170 may calibrate the temperature related S-matrix according to the first S-matrix and the second S-matrix.
During the first phase, the electronic device 10 may operate in the first temperature, and multiple results of the impedance Γm can be derived by measuring the forward signal and the reverse signal under conditions of different values of the switchable impedance of the OSL kit 110. For example, the impedance Γm may be Γm1 when the switchable impedance of the input OSL kit 110 is set to be Γa1, the impedance Γm may be Γm2 when the input switchable impedance of the input OSL kit 110 is set to be Γa2, and the impedance Γm may be Γm3 when the input switchable impedance of the input OSL kit 110 is set to be Γa3, where the impedances Γm1, Γm2 and Γm3 derived during the first phase (e.g. the impedances Γm1, Γm2 and Γm3 derived under a condition where the electronic device 10 operates in the first temperature) may be examples of the multiple first calculation results, and an equation related to the above parameters may be derived according to the first S-matrix such as an error matrix error_matrix_temp(temp1) characterized by parameters {x_temp1, y_temp1, z_temp1} as follows:
In this embodiment, the impedances Γa1, Γa2, Γa3 are different from one another. More particularly, it is preferred to make the impedances Γa1, Γa2 and Γa3 be as much far as possible in Smith Chart. For example, the OSL kit 110 may be configured as an open circuit, a short circuit and a predetermined load (e.g. 50-ohm load), respectively, making Γa1=1 (the open circuit), Γa2=−1 (the short circuit) and Γa3=0 (the predetermined load). Thus, the S-parameters e00 and e11 and a product of the S-parameters e10 and e01 can be derived during the first phase, which may be examples of the multiple first calculation results. More particularly, a parameter e10e01(temp 1) may represent the product of the S-parameters e10 and e01 under the first temperature, where the parameter e10e01(temp1)=x_temp1−y_temp1×z_temp1, and a phase phasetemp1 (e.g. a phase of the parameter e10e01(temp1)) corresponding to the error matrix error_matrix_temp(temp1) can be calculated.
During the second phase, the electronic device 10 may operate in the second temperature. By a procedure similar to that of the first phase, the impedances Γm1, Γm2 and Γm3 can be derived by measuring the forward signal and the reverse signal under conditions of different values of the calibration impedance of the OSL kit 110, where the impedances Γm1, Γm2 and Γm3 derived during the second phase (e.g. the impedances Γm1, Γm2 and Γm3 derived under a condition where the electronic device 10 operates in the second temperature) may be examples of the multiple second calculation results, and another equation may be derived according to the second S-matrix such as an error matrix error_matrix_temp(temp2) characterized by parameters {x_temp2, y_temp2, z_temp2} as follows:
As mentioned above, the impedances Γa1, Fa2, Γa3 are different from one another. More particularly, it is preferred to make the impedances Γa1, Γa2 and Fa3 be as much far as possible in Smith Chart. For example, the OSL kit 110 may be configured as an open circuit, a short circuit and a predetermined load (e.g. 50-ohm load), respectively, making σa1=1 (the open circuit), Γa2=−1 (the short circuit) and Γa3=0 (the predetermined load). Thus, the S-parameters e00 and e11 and the product of the S-parameters e10 and e01 can be derived during the second phase, which may be examples of the multiple second calculation results. More particularly, a parameter e10e01(temp2) may represent the product of the S-parameters e10 and e01 under the second temperature, where the parameter e10e01(temp2)=x_temp2−y_temp2×z_temp2, and a phase phasetemp2 (e.g. a phase of the parameter e10e01(temp2)) corresponding to the error matrix error_matrix_temp(temp2) can be calculated.
Based on the above derivation, the modem 170 may calibrate the temperature related S-matrix such as an error matrix error_matrix_temp according to the error matrix error_matrix_temp(temp1) and the error matrix error_matrix_temp(temp2). More particularly, a temperature-to-phase relationship of the error matrix error_matrix_temp is generated according to the phase phasetemp1 corresponding to the error matrix error_matrix_temp(temp1) and the phase phasetemp2 corresponding to the error matrix error_matrix_temp(temp2). For example, a compensation coefficient α related to the temperature-to-phase relationship may be calculated according to a phase difference between the phase phasetemp1 and the phase phasetemp2 and a temperature difference between the first temperature (which may be represented by temp1) and the second temperature (which may be represented by temp2) as follows:
According the above derivation, the temperature related S-matrix such as the error matrix error_matrix_temp under an arbitrary temperature temp may be expressed as follows:
By applying the above equation, the temperature related S-matrix may be calibrated regarding the temperature variation.
It should be noted that the temperature-to-phase relationship can be derived according to conditions of at least two temperatures (e.g. two or more temperatures). In addition, the temperature-to-phase relationship is not limited to be modeled as a linear relationship. For example, the temperature-to-phase relationship may be modeled as a polynomial function for being applied to the temperature related S-matrix, but the present invention is not limited thereto.
In addition, the above calibration merely considers impacts on phases of the parameters within the error matrix error_matrix_temp, where impacts on gains of the parameters within the error matrix error_matrix_temp are ignored, but the present invention is not limited thereto. For example, a temperature-to-gain relationship of the temperature related S-matrix may be generated according to a first gain corresponding to the first S-matrix (e.g. a gain of any of the parameters e10e01−e00e11, e00 and e11 derived under the first temperature) and a second gain corresponding to the second S-matrix (e.g. a gain of any of the parameters e10e01-e00e11, e00 and e11 derived under the first temperature). A compensation coefficient related to the temperature-to-gain relationship is calculated according to a gain difference between the first gain and the second gain and a temperature difference between the first temperature and the second temperature.
In one embodiment, the temperature related S-matrix such as the error matrix error_matrix_temp under an arbitrary temperature temp may be obtain by considering both a gain error and a phase error of each parameter within the error matrix error_matrix_temp caused by temperature variation, such as the gain error and the phase error of a parameter Δe (e.g. Δe=e10e01−e00e11), the gain error and the phase error of the parameter e00, and the gain error and the phase error of the parameter e11. In detail, the electronic device 10 may be set to operate in multiple temperatures (e.g. temperatures T0, T1, . . . , and TN, where N is a positive integer) to derive the parameters Δe, e00 and e11 under the multiple temperatures, and the gain error and the phase error of each of the parameters Δe, e00 and e11 can be derived for estimating the error matrix error_matrix_temp with respect to an arbitrary temperature temp.
For example, the electronic device 10 may be set to operate in a temperature Tn, where Tn may be any of the temperatures T0, T1, . . . , and TN. The impedance Γm can be derived by measuring the forward signal and the reverse signal under the conditions of the different values of the switchable impedance of the OSL kit 110. For example, the impedance Γm may be Γm1(Tn) when the switchable impedance of the input OSL kit 110 is set to be Fai under the temperature Tn, the impedance Γm may be Γm2(Tn) when the input switchable impedance of the input OSL kit 110 is set to be Γa2 under the temperature Tn, and the impedance Γm may be Γm3(Tn) when the input switchable impedance of the input OSL kit 110 is set to be Γa3 under the temperature Tn. Thus, the parameters Δe, e00 and e11 under the temperature Tn, such as Δe(Tn), e00(Tn) and e11(Tn), may be derived as follows:
As mentioned above, it is preferred to make the impedances Γa1, Γa2 and Γa3 be as much far as possible in Smith Chart. Thus, the OSL kit 110 may be configured as an open circuit, a short circuit and a predetermined load (e.g. 50-ohm load), respectively, making Γa1=1 (the open circuit), Γa2=−1 (the short circuit) and Γa3=0 (the predetermined load), but the present invention is not limited thereto.
By setting the temperature Tn to be T0, T1, . . . , and TN, multiple calculation results of the parameters Δe(Tn), e00(Tn) and e11(Tn) under these temperatures can be derived, such as {Δe(T0), e00(T0), e11(T0)}, {Δe(T1), e00(T1), e11(T1)} and {Δe(T2), e00(T2), e11(T2)}. With these calculation results, compensation coefficients (e.g. a gain compensation coefficient and a phase compensation coefficient) of each of the parameters Δe(Tn), e00(Tn) and e11(Tn) may be further estimated. For example, a phase slope pa (e.g. a phase error rate with respect to temperature variation) of the parameter Δe may be calculated according to phase values of {Δe(T0), Δe(T1), . . . , Δe(TN)}, and a gain slope gd (e.g. a gain error rate with respect to temperature variation) of the parameter Δe may be calculated according to gain values (e.g. amplitude values) of {Δe(T0), Δe(T1), . . . , Δe(TN)}. A phase slope p0 (e.g. a phase error rate with respect to temperature variation) of the parameter e00 may be calculated according to phase values of {e00(T0), e00(T1), . . . , e00(TN)}, and a gain slope g0 (e.g. a gain error rate with respect to temperature variation) of the parameter e00 may be calculated according to gain values (e.g. amplitude values) of {e00(T0), e00(T1), . . . , e00(TN)}. A phase slope p1 (e.g. a phase error rate with respect to temperature variation) of the parameter e11 may be calculated according to phase values of {e11(T0), e11(T1), . . . , e11(TN)}, and a gain slope g1 (e.g. a gain error rate with respect to temperature variation) of the parameter e11 may be calculated according to gain values (e.g. amplitude values) of {e11(T0), e11(T1), . . . , e11(TN)}.
According to the compensation coefficients mentioned above (e.g. the phase slope pd, the gain slope gd, the phase slope p0, the gain slope g0, the phase slope p1 and the gain slope g1), the parameters Δe, e00 and e11 with respect to a present temperature T, such as Δe(T), e00(T) and e11(T) may be expresses as follows:
Tr may represent a temperature of which corresponding OSL calibration is done. That is, the parameters Δe, e00 and e11 under the temperature Tr, such as Δe(Tr), e00(Tr) and e11(Tr), are known (e.g. any of the temperatures T0, T1, . . . , and TN may be an example of the temperature Tr). Thus, when the temperature changes to the present temperature T, the parameters Δe(T), e00(T) and e11(T) under the present temperature T can be updated based on the known parameters such as Δe(Tr), e00(Tr) and e11(Tr) and the present temperature T with the equations shown above, in order to compensate the error caused by the temperature variation.
In Step S310, the electronic device 10 may utilize the temperature sensitive device 100 to transmit a desired signal and receive a forward signal and a reverse signal in response to the desired signal.
In Step S320, the electronic device 10 may utilize the calibration kit 110 connected to the output port of the temperature sensitive device 100 to provide a switchable impedance.
In Step S330, during a first phase, the electronic device 10 may configure the temperature sensitive device 100 to operate in a first temperature, and calculate multiple first calculation results according to the forward signal and the reverse signal by setting the switchable impedance to be multiple impedances, respectively.
In Step S340, during a second phase, the electronic device 10 may configure the temperature sensitive device 100 to operates in a second temperature, and calculate multiple second calculation results according to the forward signal and the reverse signal by setting the switchable impedance to be the multiple impedances, respectively.
In Step S350, the electronic device 10 may calibrate the temperature related S-matrix of the temperature sensitive device 100 according to the multiple first calculation results and the multiple second calculation results.
T0 summarize, the electronic device 10 and the method provided by the embodiments of the present invention can utilize the OSL kit 110 to derive the temperature related S-matrix under different temperature, to thereby calculate associated term(s) for calibrating the temperature related S-matrix. In addition, the embodiments of the present invention will not greatly increase overall costs. Thus, the present invention can solve the problem of the related art without introducing any side effect or in a way that is less likely to introduce side effects.
Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.