Patent Application
20240251637
This application claims priority to and benefit, under 35 U.S.C. § 119, of Korean Patent Application No. 10-2023-0006300 filed on Jan. 16, 2023 in the Korean Intellectual Property Office, the entire content of which is incorporated herein by reference.
One or more embodiments relate to an electronic device including an organic photodiode and an organic light-emitting device.
Organic photodiodes (OPDs) use an organic semiconductor to absorb incident light and convert it into a current. OPDs are advantageous over inorganic photodiodes, such as silicon photodetectors, in terms of ease of processing, cost reduction, application to flexible devices, and mass production, due to the characteristics of organic materials. In addition, by having a high extinction coefficient and being able to selectively absorb light in a specific wavelength according to a molecular structure, organic materials are advantageous in terms of sensitivity improvement, wavelength selectivity, and high integration.
The structures of OPDs are similar to those of organic light-emitting devices (OLEDs). In both devices, a photoactive layer or an emission layer may be included between a hole transport layer and an electron transport layer that are arranged between electrodes. Using such structural similarity, an OPD may be integrated into an OLED and used for fingerprint recognition.
One or more embodiments include an electronic device including an organic photodiode having improved external quantum efficiency (EQE) and an organic light-emitting device.
Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments of the disclosure.
According to one or more embodiments, the first subpixel of the organic light-emitting device may further include a first optical auxiliary layer between the first common layer and the emission layer.
The organic photodiode may receive light of the same wavelength as that of light emitted by the first subpixel.
The first subpixel may emit green light, red light, or near-infrared light.
The organic light-emitting device may further include at least one additional subpixel, and
Thicknesses of the first optical auxiliary layer and the additional optical auxiliary layer may be proportional to the wavelengths of light emitted by the subpixel including the first optical auxiliary layer and the subpixel including the additional optical auxiliary layer, respectively.
In an embodiment, the first subpixel of the organic light-emitting device may further include a second optical auxiliary layer arranged between the first subpixel electrode and the first common layer.
The organic light-emitting device may further include at least one additional subpixel, and
The additional subpixel may include a second subpixel and a third subpixel, and
The additional subpixel may include a second subpixel, a third subpixel, and a fourth subpixel, and
The optical auxiliary electrode may include indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), In2O3, indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), zinc tin oxide (ZTO), fluorine doped tin oxide (FTO), gallium tin oxide (GTO), gallium doped zinc oxide (GZO), ZnO, TiO, tungsten oxide, molybdenum oxide, or a combination thereof.
The first optical auxiliary electrode may have a thickness in a range of about 250 Å to about 2,000 Å.
The photoactive layer may have a thickness in a range of about 150 Å to about 1,000 Å.
The emission layer may have a thickness in a range of about 300 Å to about 700 Å.
The organic photodiode has a resonance distance identical to that of the first subpixel.
The first optical auxiliary electrode has a thickness identical to that of the second optical auxiliary electrode.
Thicknesses of the second optical auxiliary layer and the additional optical auxiliary electrode may each be proportional to the wavelengths of light emitted by the subpixel including the second optical auxiliary electrode and the subpixel including the additional optical auxiliary electrode.
The first optical auxiliary electrode has a thickness identical to that of the second optical auxiliary electrode.
According to one or more embodiments,
The above and other aspects, features, and advantages of certain embodiments of the disclosure will be more apparent from the following description taken in conjunction with the accompanying drawings, in which:
Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects of the present description. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b or c” indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.
It should be understood that embodiments that are illustrated in the drawings and are described in the detailed description are examples of the inventive concept, and various modifications are contemplated. An effect and a characteristic of the disclosure, and a method of accomplishing these will be apparent when referring to embodiments described with reference to the drawings. The disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
It will be understood that although the terms “first,” “second,” etc. used herein may be used to describe various components, these components should not be limited by these terms. These components are only used to distinguish one component from another.
An expression used in the singular encompasses the expression of the plural, unless it has a clearly different meaning in the context.
In the following embodiments, when various components such as layers, films, regions, plates, etc. are said to be “on” another component, this may include not only a case in which other components are “directly on” the layers, films, regions, or plates, but also a case in which other components may be placed therebetween. Sizes of elements in the drawings may be exaggerated for convenience of explanation. In other words, because sizes and thicknesses of components in the drawings are arbitrarily illustrated for convenience of explanation, the following embodiments are not limited thereto.
It will be further understood that the terms “includes” and/or “comprises” used herein specify the presence of stated features or elements, but do not preclude the presence or addition of one or more other features or elements. Unless defined otherwise, the terms “include” or “have” may refer to both the case of consisting of features or components described in a specification and the case of further including other components.
An organic photodiode included in an electronic device will be described with reference to
Referring to
One of the first electrode 110 and the second electrode 150 may be an anode, and the other may be a cathode. For example, the first electrode 110 may be an anode, and the second electrode 150 may be a cathode.
The optical auxiliary electrode 112 may adjust an optical distance to cause an optical microcavity of the organic photodiode. When the optical distance is optimized, the intensity of light from the second electrode may be increased by the optical microcavity, and thus, light absorption in the photoactive layer may be increased, thereby increasing efficiency of light conversion to a current. The optical auxiliary electrode 112 may include a transparent conductive metal oxide. The optical auxiliary electrode 112 may include, for example, indium tin oxide (ITO), indium zinc dioxide (IZO), aluminum zinc oxide (AZO), In2O3, indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), zinc tin oxide (ZTO), fluorine doped tin oxide (FTO), gallium tin oxide (GTO), gallium doped zinc oxide (GZO), ZnO, TiO, tungsten oxide, molybdenum oxide, or a combination thereof.
The thickness of the optical auxiliary electrode 112 may be determined according to the wavelength of light to be received.
In the organic photodiode, a distance CD1 between the anode 110 and the photoactive layer 130 may be roughly determined by Equation (1):
wherein, in Equation (1), m denotes a resonance order, λ denotes a receiving wavelength, and n denotes a refractive index of a layer corresponding to CD1. For example, when m is 3, λ is 530 nm (green light), and n is 2, CD1 may be a value of about 330 nm. Because the refractive indices of the optical auxiliary electrode 112 and the organic layer are different from each other, and the organic layer has a multi-layer structure, an error occurs between the value calculated in Equation (1) and the actual experimental optimal value, and thus, there is an acceptable range through simulation. In the device according to the present embodiment, a CD1 value may be a sum of the thickness of the hole transport region 120 and the optical auxiliary electrode 112.
The optical auxiliary electrode 112 may have a thickness in a range of about 250 Å to about 2,000 Å. In an embodiment, when the organic photodiode receives green light having a wavelength of about 500 nm to about 550 nm, the optical auxiliary electrode 112 may have a thickness of about 250 Å to about 500 Å. In an embodiment, when the organic photodiode receives red light having a wavelength of about 600 nm to about 650 nm, the optical auxiliary electrode 112 may have a thickness of about 600 Å to about 900 Å. In an embodiment, when the organic photodiode receives near-infrared light having a wavelength of about 800 nm to about 1,000 nm, the optical auxiliary electrode 112 may have a thickness of about 1,300 Å to about 2,000 Å.
The photoactive layer 130 may absorb incident light to form excitons, and charges are separated from the excitons to form electrons and holes.
The holes generated in the photoactive layer 130 may move to the first electrode 110 through the hole transport region 120, and the electrons generated in the photoactive layer 130 may move to the second electrode 150 through the electron transport region 140, thereby generating photocurrent and detecting light.
In an embodiment, the photoactive layer 130 may include a p-type semiconductor layer including a p-type semiconductor and an n-type semiconductor layer including the n-type semiconductor, wherein the p-type semiconductor layer and the n-type semiconductor layer form a PN junction. The PN junction may include, for example, a planar heterojunction or a bulk heterojunction.
Since the p-type organic semiconductor acts as an electron donor, and the n-type organic semiconductor acts as an electron acceptor, excitons can be efficiently divided into holes and electrons by photo-induced charge separation occurring at the interface between the p-type semiconductor layer and the n-type semiconductor layer. Furthermore, as the photoactive layer is separated into the p-type semiconductor layer and the n-type semiconductor layer, the holes and electrons generated at the interface may be easily captured and moved.
In one or more embodiments, the photoactive layer 130 may be a mixed layer in which the p-type semiconductor and the n-type semiconductor are mixed. In this case, the p-type semiconductor and the n-type semiconductor may be co-deposited.
The p-type semiconductor may include a compound serving as an electron donor. The p-type organic semiconductor may be, for example, borone subphthalocyanine chloride (SubPc), boron subnaphthalocyanine chloride (SubNc), copper(II)phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), or a combination thereof, but embodiments of the disclosure are not limited thereto.
The n-type organic semiconductor may include a compound serving as an electron acceptor. For example, the n-type organic semiconductor may include 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA), N,N′-di(propoxyethyl)perylene-3,4,9,10-tetracarboxylic diimide (PTCDI), naphthalene tetracarboxylic anhydride (NTCDA), naphthalenetetracarboxylic diimide (NTCDI), or a derivative thereof, a fullerene derivative, or a combination thereof. R in the below Equation denotes a substituent such as an aryl group:
A thickness of the photoactive layer 130 may be in a range of about 50 Å to about 1,000 Å, for example, in a range of about 150 Å to about 1,000 Å, about 150 Å to about 700 Å, or about 200 Å to about 500 Å.
The first electrode 110, the second electrode 150, the hole transport region 120, and the electron transport region 140 of the organic photodiode 10 may each be formed of the same materials as materials for forming an anode, a cathode, a hole transport region, and an electron transport region of an organic light-emitting device, respectively.
Referring to
An electron transport layer 141 and an electron injection layer 143 are arranged between the photoactive layer 130 and the second electrode 150. In an embodiment, an additional layer such as a hole blocking layer (not shown) may be further included between the photoactive layer 130 and the electron transport layer 121.
A description of the photoactive layer 130 of the organic photodiode 20 may be as described for the photoactive layer 130 of the organic photodiode 10 of
Hereinafter, the layers that are commonly used with the organic light-emitting device among the layers constituting the organic photodiodes 10 and 20 of
In
The first electrode 110 may be formed by, for example, depositing or sputtering a material for forming the first electrode 110 on the substrate. When the first electrode 110 is an anode, the material for forming the first electrode 110 may be a high-work function material.
The first electrode 110 may be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. When the first electrode 110 is a transmissive electrode, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or a combination thereof may be used as a material for forming the first electrode 110. In an embodiment, to form the first electrode 110 as a semi-transmissive electrode or a reflective electrode, magnesium (Mg), silver (Ag), aluminum (AI), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), or a combination thereof may be used as the material for forming the first electrode 110.
The first electrode 110 may have a single-layered structure consisting of a single layer or a multi-layered structure including a plurality of layers. For example, the first electrode 110 may have a three-layered structure of ITO/Ag/ITO.
The organic photodiode 10 or 20 according to an embodiment may include a charge auxiliary layer that facilitates the transport of holes and electrons separated from the photoactive layer 130. The charge auxiliary layer may include a hole injection layer and a hole transport layer to facilitate the transport of holes, and an electron transport layer and an electron injection layer to facilitate the transport of electrons.
The charge auxiliary layer and layers included therein arranged between the first electrode 110 and the photoactive layer 130 may be collectively referred to as the hole transport region 120. The hole transport region 120 may facilitate the transport of holes generated in the photoactive layer 130.
The hole transport region 120 may include a hole transport layer, a hole injection layer, an electron blocking layer, or a combination thereof.
The hole transport region may include a hole transporting material. For example, the hole transporting material may include a compound represented by Formula 201, a compound represented by Formula 202, or a combination thereof:
wherein, in Formulae 201 and 202,
For example, each of Formulae 201 and 202 may include at least one of groups represented by Formulae CY201 to CY217:
R10b and R10c in Formulae CY201 to CY217 are as described for R10a, ring CY201 to ring CY204 may each independently be a C3-C20 carbocyclic group or a C1-C20 heterocyclic group, and at least one hydrogen in Formulae CY201 to CY217 may be unsubstituted or substituted with R10a.
In an embodiment, ring CY201 to ring CY204 in Formulae CY201 to CY217 may each independently be a benzene group, a naphthalene group, a phenanthrene group, or an anthracene group.
In one or more embodiments, each of Formulae 201 and 202 may include at least one of groups represented by Formulae CY201 to CY203.
In one or more embodiments, Formula 201 may include at least one of the groups represented by Formulae CY201 to CY203 and at least one of the groups represented by Formulae CY204 to CY217.
In one or more embodiments, in Formula 201, xa1 may be 1, R201 may be a group represented by one of Formulae CY201 to CY203, xa2 may be 0, and R202 may be a group represented by one of Formulae CY204 to CY207.
In one or more embodiments, each of Formulae 201 and 202 may not include a group represented by one of Formulae CY201 to CY203.
In one or more embodiments, each of Formulae 201 and 202 may not include a group represented by one of Formulae CY201 to CY203, and may include at least one of the groups represented by Formulae CY204 to CY217.
In one or more embodiments, each of Formulae 201 and 202 may not include a group represented by one of Formulae CY201 to CY217.
For example, the hole transporting material may include one of Compounds HT1 to HT46, m-MTDATA, TDATA, 2-TNATA, NPB(NPD), —NPB, TPD, Spiro-TPD, Spiro-NPB, methylated NPB, TAPC, HMTPD, 4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline/dodecylbenzenesulfonic acid (PANI/DBSA), poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS), polyaniline/camphor sulfonic acid (PANI/CSA), polyaniline/poly(4-styrenesulfonate) (PANI/PSS), or a combination thereof:
A thickness of the hole transport region may be in a range of about 50 Å to about 10,000 Å, for example, about 100 Å to about 4,000 Å. When the hole transport region includes a hole injection layer, a hole transport layer, or a combination thereof, a thickness of the hole injection layer may be in a range of about 100 Å to about 9,000 Å, for example, about 100 Å to about 1,000 Å, and a thickness of the hole transport layer may be in a range of about 50 Å to about 2,000 Å, for example, about 100 Å to about 1,500 Å. When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer are within these ranges, satisfactory hole transporting characteristics may be obtained without a substantial increase in driving voltage.
The electron blocking layer may be a layer that prevents electron leakage from the active layer 130 to the hole transport region. The hole transporting material as described above may be included in the electron blocking layer.
[p-Dopant]
The hole transport region may further include, in addition to these materials, a charge-generation material for the improvement of conductive properties. The charge-generation material may be uniformly or non-uniformly dispersed in the hole transport region (for example, in the form of a single layer consisting of a charge-generation material).
The charge-generation material may be, for example, a p-dopant.
For example, the lowest unoccupied molecular orbital (LUMO) energy level of the p-dopant may be −3.5 eV or less.
In one or more embodiments, the p-dopant may include a quinone derivative, a cyano group-containing compound, a compound including element EL1 and element EL2, or a combination thereof.
Examples of the quinone derivative are TCNQ, F4-TCNQ, etc.
Examples of the cyano group-containing compound are HAT-CN and a compound represented by Formula 221 below.
In Formula 221,
R221 to R223 may each independently be a C3-C60 carbocyclic group unsubstituted or substituted with at least one R10a or a C1-C60 heterocyclic group unsubstituted or substituted with at least one R10a, and
In the compound including element EL1 and element EL2, element EL1 may be metal, metalloid, or a combination thereof, and element EL2 may be non-metal, metalloid, or a combination thereof.
Examples of the metal are an alkali metal (for example, lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metal (for example, beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metal (for example, titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.); post-transition metal (for example, zinc (Zn), indium (In), tin (Sn), etc.); and lanthanide metal (for example, lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.).
Examples of the metalloid are silicon (Si), antimony (Sb), and tellurium (Te).
Examples of the non-metal are oxygen (O) and halogen (for example, F, Cl, Br, I, etc.).
Examples of the compound including element EL1 and element EL2 are metal oxide, metal halide (for example, metal fluoride, metal chloride, metal bromide, or metal iodide), metalloid halide (for example, metalloid fluoride, metalloid chloride, metalloid bromide, or metalloid iodide), metal telluride, or a combination thereof.
Examples of the metal oxide are tungsten oxide (for example, WO, W2O3, WO2, WO3, W2O5, etc.), vanadium oxide (for example, VO, V2O3, VO2, V2O5, etc.), molybdenum oxide (MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.), and rhenium oxide (for example, ReO3, etc.).
Examples of the metal halide are alkali metal halide, alkaline earth metal halide, transition metal halide, post-transition metal halide, and lanthanide metal halide.
Examples of the alkali metal halogen may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, and CsI.
Examples of the alkaline earth metal halide are BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2), SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, and BaI2.
Examples of the transition metal halide are titanium halide (for example, TiF4, TiCl4, TiBr4, TiI4, etc.), zirconium halide (for example, ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), hafnium halide (for example, HfF4, HfCl4, HfBr4, HfI4, etc.), vanadium halide (for example, VF3, VCl3, VBr3, VI3, etc.), niobium halide (for example, NbF3, NbCl3, NbBr3, NbI3, etc.), tantalum halide (for example, TaF3, TaCl3, TaBr3, TaI3, etc.), chromium halide (for example, CrF3, CrCl3, CrBr3, CrI3, etc.), molybdenum halide (for example, MoF3, MoCl3, MoBr3, MoI3, etc.), tungsten halide (for example, WF3, WCl3, WBr3, WI3, etc.), manganese halide (for example, MnF2, MnCl2, MnBr2, MnI2, etc.), technetium halide (for example, TcF2, TcCl2, TcBr2, TcI2, etc.), rhenium halide (for example, ReF2, ReCl2, ReBr2, ReI2, etc.), iron halide (for example, FeF2, FeCl2, FeBr2, FeI2, etc.), ruthenium halide (for example, RuF2, RuCl2, RuBr2, RuI2, etc.), osmium halide (for example, OsF2, OsCl2, OsBr2, OsI2, etc.), cobalt halide (for example, CoF2, CoCl2, CoBr2, CoI2, etc.), rhodium halide (for example, RhF2, RhCl2, RhBr2, RhI2, etc.), iridium halide (for example, IrF2, IrCl2, IrBr2, IrI2, etc.), nickel halide (for example, NiF2, NiCl2, NiBr2, NiI2, etc.), palladium halide (for example, PdF2, PdCl2, PdBr2, PdI2, etc.), platinum halide (for example, PtF2, PtCl2, PtBr2, PtI2, etc.), copper halide (for example, CuF, CuCl, CuBr, CuI, etc.), silver halide (for example, AgF, AgCl, AgBr, AgI, etc.), and gold halide (for example, AUF, AuCl, AuBr, AuI, etc.).
Examples of the post-transition metal halide are zinc halide (for example, ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), indium halide (for example, InI3, etc.), and tin halide (for example, SnI2, etc.).
Examples of the lanthanide metal halide are YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3 SmCl3, YbBr, YbBr2, YbBr3 SmBr3, YbI, YbI2, YbI3, and SmI3.
An example of the metalloid halide is antimony halide (for example, SbCl5, etc.).
Examples of the metal telluride are alkali metal telluride (for example, Li2Te, Na2Te, K2Te, Rb2Te, Cs2Te, etc.), alkaline earth metal telluride (for example, BeTe, MgTe, CaTe, SrTe, BaTe, etc.), transition metal telluride (for example, TiTe2, ZrTe2, HfTe2, V2Te3, Nb2Te3, Ta2Te3, Cr2Te3, Mo2Te3, W2Te3, MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc.), post-transition metal telluride (for example, ZnTe, etc.), and lanthanide metal telluride (for example, LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.).
The charge auxiliary layer and layers included therein arranged between the photoactive layer 130 and the second electrode 150 may be collectively referred to as the electron transport region 140. The electron transport region 140 may facilitate the transport of electrons generated in the photoactive layer 130.
The electron transport region may have: i) a single-layered structure consisting of a single layer consisting of a single material, ii) a single-layered structure consisting of a single layer consisting of a plurality of different materials, or iii) a multi-layered structure including a plurality of layers including different materials.
The electron transport region may include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or a combination thereof.
For example, the electron transport region may have an electron transport layer/electron injection layer structure, a hole blocking layer/electron transport layer/electron injection layer structure, an electron control layer/electron transport layer/electron injection layer structure, or a buffer layer/electron transport layer/electron injection layer structure, the constituting layers of each structure being sequentially stacked from an emission layer.
In an embodiment, the electron transport region (for example, the buffer layer, the hole blocking layer, the electron control layer, or the electron transport layer in the electron transport region) may include a metal-free compound including at least one IT electron-deficient nitrogen-containing C1-C60 cyclic group.
For example, the electron transport region may include a compound represented by Formula 601 below:
For example, when xe11 in Formula 601 is 2 or more, two or more of Ar601(s) may be linked to each other via a single bond.
In other embodiments, Ar601 in Formula 601 may be a substituted or unsubstituted anthracene group.
In other embodiments, the electron transport region may include a compound represented by Formula 601-1:
For example, xe1 and xe611 to xe613 in Formulae 601 and 601-1 may each independently be 0, 1, or 2.
The electron transport region may include one of Compounds ET1 to ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, TAZ, NTAZ, or a combination thereof:
A thickness of the electron transport region may be from about 100 Å to about 5,000 Å, for example, about 160 Å to about 4,000 Å. When the electron transport region includes a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, or a combination thereof, the thickness of the buffer layer, the hole blocking layer, or the electron control layer may each independently be from about 20 Å to about 1000 Å, for example, about 30 Å to about 300 Å, and the thickness of the electron transport layer may be from about 100 Å to about 1000 Å, for example, about 150 Å to about 500 Å. When the thickness of the buffer layer, the hole blocking layer, the electron control layer, the electron transport layer, and/or the electron transport region are within these ranges, satisfactory electron transporting characteristics may be obtained without a substantial increase in driving voltage.
The electron transport region (for example, the electron transport layer in the electron transport region) may further include, in addition to the materials described above, a metal-containing material.
The metal-containing material may include an alkali metal complex, an alkaline earth metal complex, or a combination thereof. The metal ion of an alkali metal complex may be a Li ion, a Na ion, a K ion, a Rb ion, or a Cs ion, and the metal ion of an alkaline earth metal complex may be a Be ion, a Mg ion, a Ca ion, a Sr ion, or a Ba ion. A ligand coordinated with the metal ion of the alkali metal complex or the alkaline earth-metal complex may include a hydroxyquinoline, a hydroxyisoquinoline, a hydroxybenzoquinoline, a hydroxyacridine, a hydroxyphenanthridine, a hydroxyphenyloxazole, a hydroxyphenylthiazole, a hydroxyphenyloxadiazole, a hydroxyphenylthiadiazole, a hydroxyphenylpyridine, a hydroxyphenylbenzimidazole, a hydroxyphenylbenzothiazole, a bipyridine, a phenanthroline, a cyclopentadiene, or a combination thereof.
For example, the metal-containing material may include a Li complex. The Li complex may include, for example, Compound ET-D1 (LiQ) or ET-D2:
The electron transport region may include an electron injection layer that facilitates the injection of electrons from the second electrode 150. The electron injection layer may directly contact the second electrode 150.
The electron injection layer may have: i) a single-layered structure consisting of a single layer consisting of a single material, ii) a single-layered structure consisting of a single layer consisting of a plurality of different materials, or iii) a multi-layered structure including a plurality of layers including different materials.
The electron injection layer may include an alkali metal, alkaline earth metal, a rare earth metal, an alkali metal-containing compound, alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or a combination thereof.
The alkali metal may include Li, Na, K, Rb, Cs, or a combination thereof. The alkaline earth metal may include Mg, Ca, Sr, Ba, or a combination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd, or a combination thereof.
The alkali metal-containing compound, the alkaline earth metal-containing compound, and the rare earth metal-containing compound may be oxides, halides (for example, fluorides, chlorides, bromides, or iodides), or tellurides of the alkali metal, the alkaline earth metal, and the rare earth metal, or a combination thereof.
The alkali metal-containing compound may include: alkali metal oxides, such as Li2O, Cs2O, or K2O; alkali metal halides, such as LiF, NaF, CsF, KF, LiI, NaI, CsI, or KI; or a combination thereof. The alkaline earth metal-containing compound may include an alkaline earth metal compound, such as BaO, SrO, CaO, BaxSr1-xO (wherein x is a real number satisfying the condition of 0<x<1), BaxCa1-xO (wherein x is a real number satisfying the condition of 0<x<1), or the like. The rare earth metal-containing compound may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or a combination thereof. In one or more embodiments, the rare earth metal-containing compound may include lanthanide metal telluride. Examples of the lanthanide metal telluride are LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, and Lu2Te3.
The alkali metal complex, the alkaline earth-metal complex, and the rare earth metal complex may include i) one of ions of the alkali metal, the alkaline earth metal, and the rare earth metal and ii), as a ligand bonded to the metal ion, for example, a hydroxyquinoline, a hydroxyisoquinoline, a hydroxybenzoquinoline, a hydroxyacridine, a hydroxyphenanthridine, a hydroxyphenyloxazole, a hydroxyphenylthiazole, a hydroxyphenyloxadiazole, a hydroxyphenylthiadiazole, a hydroxyphenylpyridine, a hydroxyphenyl benzimidazole, a hydroxyphenylbenzothiazole, a bipyridine, a phenanthroline, a cyclopentadiene, or a combination thereof.
The electron injection layer may consist of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or a combination thereof, as described above. In one or more embodiments, the electron injection layer may further include an organic material (for example, a compound represented by Formula 601).
In one or more embodiments, the electron injection layer may consist of: i) an alkali metal-containing compound (for example, an alkali metal halide); or ii) a) an alkali metal-containing compound (for example, an alkali metal halide), and b) an alkali metal, an alkaline earth metal, a rare earth metal, or a combination thereof. For example, the electron injection layer may be a KI:Yb co-deposited layer, an RbI:Yb co-deposited layer, a LiF:Yb co-deposited layer, or the like.
When the electron injection layer further includes an organic material, an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth-metal complex, a rare earth metal complex, or a combination thereof may be uniformly or non-uniformly dispersed in a matrix including the organic material.
A thickness of the electron injection layer may be in a range of about 1 Å to about 100 Å, and, for example, about 3 Å to about 90 Å. When the thickness of the electron injection layer is within the ranges described above, satisfactory electron injection characteristics may be obtained without a substantial increase in driving voltage.
The second electrode 150 is arranged on the photoactive layer 130. The second electrode 150 may be a cathode, which is an electron injection electrode, and as the material for the second electrode 150, a metal, an alloy, an electrically conductive compound, or a combination thereof, each having a low-work function, may be used.
The second electrode 150 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), ytterbium (Yb), silver-ytterbium (Ag—Yb), ITO, IZO, or a combination thereof. The second electrode 150 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.
The second electrode 150 may have a single-layered structure or a multi-layered structure including a plurality of layers.
A first capping layer (not shown) may be arranged outside the first electrode 110, and/or a second capping layer (not shown) may be arranged outside the second electrode 150.
The first capping layer and/or the second capping layer may prevent impurities, such as water, oxygen, and the like, from entering the organic photodiode 10 or 20, thereby increasing the reliability of the organic photodiode 10 or 20.
The first capping layer and the second capping layer may each include a material having a refractive index of 1.6 or more (at 589 nm).
The first capping layer and the second capping layer may each independently be an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or an organic-inorganic composite capping layer including an organic material and an inorganic material.
At least one of the first capping layer and the second capping layer may each independently include carbocyclic compounds, heterocyclic compounds, amine group-containing compounds, porphine derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, alkali metal complexes, alkaline earth metal complexes, or a combination thereof. Optionally, the carbocyclic compound, the heterocyclic compound, and the amine group-containing compound may be substituted with a substituent including O, N, S, Se, Si, F, Cl, Br, I, or a combination thereof. In one or more embodiments, at least one of the first capping layer and the second capping layer may each independently include an amine group-containing compound.
For example, at least one of the first capping layer and the second capping layer may each independently include a compound represented by Formula 201, a compound represented by Formula 202, or a combination thereof.
In one or more embodiments, at least one of the first capping layer and the second capping layer may each independently include one of Compounds HT28 to HT33, one of Compounds CP1 to CP6, β-NPB, or a combination thereof:
Details of the organic light-emitting device of the electronic device are described below. In the disclosure, the organic light-emitting device may include a plurality of pixels, and one pixel may include a plurality of subpixels. The subpixels may each independently emit different colors. In the disclosure, each subpixel may be seen as a single device, and thus, may be called an organic light-emitting device. Because the first electrode, the second electrode, the hole transport region, and the electron transport region of the organic light-emitting device are commonly used with the organic photodiode, details of the optical auxiliary layer and the emission layer of the organic light-emitting device are described below.
An optical auxiliary layer may adjust an optical distance for the microresonance of the organic light-emitting device. The optical auxiliary layer may be arranged between the hole transport region and the emission layer. The optical auxiliary layer may have a thickness proportional to the emission wavelength of the organic light-emitting device. For example, an optical auxiliary layer of a green organic light-emitting device having a wavelength in a range of about 500 nm to about 550 nm may have a thickness in a range of about 250 Å to about 500 Å. For example, an optical auxiliary layer of a red organic light-emitting device having a wavelength in a range of about 600 nm to about 650 nm may have a thickness in a range of about 650 Å to about 900 Å. For example, an optical auxiliary layer of a far-infrared organic light-emitting device having a wavelength in a range of about 800 nm to about 1,000 nm may have a thickness in a range of about 1,300 Å to about 1,800 Å.
Because the optical auxiliary layer is arranged between the hole transport region and the emission layer, the optical auxiliary layer may include a hole transport layer material. For example, the optical auxiliary layer may be formed of the same material as that of the hole transport layer.
The emission layer may be a red emission layer, a green emission layer, a blue emission layer, or a white emission layer. The emission layer may have a structure consisting of a red luminescent material, a green luminescent material, or a blue luminescent material only, or a structure in which these luminescent materials are mixed.
The emission layer may have a thickness in a range of about 300 Å to about 700 Å.
The emission layer may include a host and a dopant. The dopant may include a phosphorescent dopant, a fluorescent dopant, or a combination thereof.
The amount of the dopant in the emission layer may be from about 0.01 part by weight to about 15 parts by weight based on 100 parts by weight of the host.
In one or more embodiments, the emission layer may include a quantum dot.
Meanwhile, the emission layer may include a delayed fluorescence material. The delayed fluorescence material may act as a host or a dopant in the emission layer.
In an embodiment, the host may include a compound represented by Formula 301:
[Ar301]xb11-[(L301)xb1-R301]xb21 Formula 301
In Formula 301,
For example, when xb11 in Formula 301 is 2 or more, two or more of Ar301(s) may be linked to each other via a single bond.
In one or more embodiments, the host may include a compound represented by Formula 301-1, a compound represented by Formula 301-2, or a combination thereof:
In Formulae 301-1 and 301-2,
In one or more embodiments, the host may include an alkali earth metal complex, a post-transition metal complex, or a combination thereof. For example, the host may include a Be complex (for example, Compound H55), an Mg complex, a Zn complex, or a combination thereof.
In an embodiment, the host may include one of Compounds H1 to H126, 9,10-di(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN), 9,10-di-(2-naphthyl)-2-t-butyl-anthracene (TBADN), 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP), 1,3-di-9-carbazolylbenzene (mCP), 1,3,5-tri(carbazol-9-yl)benzene (TCP), or a combination thereof:
In one or more embodiments, the phosphorescent dopant may include at least one transition metal as a central metal.
The phosphorescent dopant may include a monodentate ligand, a bidentate ligand, a tridentate ligand, a tetradentate ligand, a pentadentate ligand, a hexadentate ligand, or a combination thereof.
The phosphorescent dopant may be electrically neutral.
For example, the phosphorescent dopant may include an organometallic compound represented by Formula 401:
M(L401)xc1(L402)xc2 Formula 401
Formula 402
For example, in Formula 402, i) X401 may be nitrogen, and X402 may be carbon, or ii) each of X401 and X402 may be nitrogen.
In one or more embodiments, when xc1 in Formula 402 is 2 or more, two ring A401(s) in two or more of L401(s) may be optionally linked to each other via T402, which is a linking group, or two ring A402(s) may be optionally linked to each other via T403, which is a linking group (see Compounds PD1 to PD4 and PD7). T402 and T403 may each be as described for T401.
L402 in Formula 401 may be an organic ligand. For example, L402 may include a halogen group, a diketone group (for example, an acetylacetonate group), a carboxylic acid group (for example, a picolinate group), —C(═O), an isonitrile group, —CN group, a phosphorus group (for example, a phosphine group, a phosphite group, etc.), or a combination thereof.
The phosphorescent dopant may include, for example, one of the following Compounds PD1 to PD40 or a combination thereof, but embodiments of the disclosure are not limited thereto:
The fluorescent dopant may include an amine group-containing compound, a styryl group-containing compound, or a combination thereof.
For example, the fluorescent dopant may include a compound represented by Formula 501:
For example, Ar501 in Formula 501 may be a condensed cyclic group (for example, an anthracene group, a chrysene group, or a pyrene group) in which three or more monocyclic groups are condensed together.
In one or more embodiments, xd4 in Formula 501 may be 2.
For example, the fluorescent dopant may include: one of Compounds FD1 to FD36; DPVBi; DPAVBi; or a combination thereof:
The emission layer may include a delayed fluorescence material.
In the present specification, the delayed fluorescence material may be selected from compounds capable of emitting delayed fluorescent light based on a delayed fluorescence emission mechanism.
The delayed fluorescence material included in the emission layer may act as a host or a dopant depending on the type of other materials included in the emission layer.
In one or more embodiments, the difference between the triplet energy level (eV) of the delayed fluorescence material and the singlet energy level (eV) of the delayed fluorescence material may be greater than or equal to 0 eV and less than or equal to 0.5 eV. When the difference between the triplet energy level of the delayed fluorescence material and the singlet energy level of the delayed fluorescence material satisfies the above-described range, up-conversion from the triplet state to the singlet state of the delayed fluorescence materials may effectively occur, and thus, the luminescence efficiency of the light-emitting device 10 may be improved.
For example, the delayed fluorescence material may include i) a material including at least one electron donor (for example, a IT electron-rich C3-C60 cyclic group, such as a carbazole group) and at least one electron acceptor (for example, a sulfoxide group, a cyano group, or a π electron-deficient nitrogen-containing C1-C60 cyclic group), and ii) a material including a C8-C60 polycyclic group in which two or more cyclic groups are condensed while sharing boron (B).
Examples of the delayed fluorescence material may include at least one of the following compounds DF1 to DF9:
The emission layer may include a quantum dot.
The term “quantum dots” as used herein refers to crystals of a semiconductor compound, and may include any material capable of emitting light of various emission wavelengths according to the size of the crystals.
A diameter of the quantum dot may be, for example, in a range of about 1 nm to about 10 nm.
The quantum dot may be synthesized by a wet chemical process, a metal organic chemical vapor deposition process, a molecular beam epitaxy process, or any process similar thereto.
The wet chemical process is a method including mixing a precursor material with an organic solvent and then growing a quantum dot particle crystal. When the crystal grows, the organic solvent naturally acts as a dispersant coordinated on the surface of the quantum dot crystal and controls the growth of the crystal so that the growth of quantum dot particles can be controlled through a process which costs lower, and is easier than vapor deposition methods, such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
The quantum dot may include Group II-VI semiconductor compounds, Group III-V semiconductor compounds, Group III-VI semiconductor compounds, Group I-III-VI semiconductor compounds, Group IV-VI semiconductor compounds, a Group IV element or compound, or a combination thereof.
Examples of the Group II-VI semiconductor compound are a binary compound, such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, or MgS; a ternary compound, such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, or MgZnS; a quaternary compound, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, or HgZnSTe; or a combination thereof.
Examples of the Group III-V semiconductor compound are a binary compound, such as GaN, GaP, GaAs, GaSb, AlN, AlP, AIAs, AlSb, InN, InP, InAs, InSb, or the like; a ternary compound, such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, or the like; a quaternary compound, such as GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or the like; or a combination thereof. Meanwhile, the Group III-V semiconductor compound may further include a Group II element. Examples of the Group III-V semiconductor compound further including a Group II element are InZnP, InGaZnP, InAlZnP, etc.
Examples of the Group III-VI semiconductor compound are: a binary compound, such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, or InTe; a ternary compound, such as InGaS3, or InGaSe3; and a combination thereof.
Examples of the Group I-III-VI semiconductor compound are: a ternary compound, such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, or AgAlO2; or a combination thereof.
Examples of the Group IV-VI semiconductor compound are: a binary compound, such as SnS, SnSe, SnTe, PbS, PbSe, or PbTe; a ternary compound, such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, or SnPbTe; a quaternary compound, such as SnPbSSe, SnPbSeTe, or SnPbSTe; or a combination thereof.
The Group IV element or compound may include: a single element, such as Si or Ge; a binary compound, such as SiC or SiGe; or a combination thereof.
Each element included in a multi-element compound such as the binary compound, the ternary compound, and the quaternary compound may be present at a uniform concentration or non-uniform concentration in a particle.
Meanwhile, the quantum dot may have a single structure in which the concentration of each element in the quantum dot is uniform, or a core-shell dual structure. For example, the material included in the core and the material included in the shell may be different from each other.
The shell of the quantum dot may act as a protective layer that prevents chemical degeneration of the core to maintain semiconductor characteristics, and/or as a charging layer that imparts electrophoretic characteristics to the quantum dot. The shell may be a single layer or a multi-layer. The interface between the core and the shell may have a concentration gradient in which the concentration of an element existing in the shell decreases toward the center of the core.
Examples of the shell of the quantum dot may be an oxide of metal, metalloid, or non-metal, a semiconductor compound, and a combination thereof. Examples of the oxide of metal, metalloid, or non-metal are a binary compound, such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO; a ternary compound, such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4; and a combination thereof. Examples of the semiconductor compound are, as described herein, a Group II-VI semiconductor compound; a Group III-V semiconductor compound; a Group III-VI semiconductor compound; a Group I-III-VI semiconductor compound; a Group IV-VI semiconductor compound; and a combination thereof. For example, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or a combination thereof.
A full width at half maximum (FWHM) of the emission wavelength spectrum of the quantum dot may be about 45 nm or less, for example, about 40 nm or less, for example, about 30 nm or less, and within these ranges, color purity or color reproducibility may be increased. In addition, since light emitted through the quantum dot is emitted in all directions, the wide viewing angle may be improved.
In addition, the quantum dot may be in the form of a spherical particle, a pyramidal particle, a multi-arm particle, a cubic nanoparticle, a nanotube particle, a nanowire particle, a nanofiber particle, or a nanoplate particle.
Since the energy band gap may be adjusted by controlling the size of the quantum dot, light having various wavelength bands may be obtained from the quantum dot emission layer. Accordingly, by using quantum dot of different sizes, a light-emitting device that emits light of various wavelengths may be implemented. In one or more embodiments, the size of the quantum dot may be selected to emit red, green and/or blue light. In addition, the size of the quantum dot may be configured to emit white light by combination of light of various colors.
An electronic device including the organic photodiode and the organic light-emitting device may be provided.
The electronic device according to an embodiment including, side by side, an organic photodiode and an organic light-emitting device, may include;
The organic photodiode may detect light emitted from the organic light-emitting device and reflected from a subject. The organic light-emitting device may include at least one subpixel.
In an embodiment, the organic light-emitting device may include a first subpixel, and the organic photodiode may detect light emitted from the first subpixel of the organic light-emitting device and reflected from a subject.
In an embodiment, the organic light-emitting device may include a plurality of subpixels. The organic light-emitting device may include, for example, two to five subpixels. The organic light-emitting device may include, for example, a first subpixel, a second subpixel, and a third subpixel, and the organic photodiode may detect light emitted from the first subpixel of the organic light-emitting device and reflected from a subject.
In an embodiment, the subpixels of the organic light-emitting device may further include an optical auxiliary layer arranged between the hole transport region and the emission layer. That is, to adjust the optical distance for microresonance, the organic photodiode may use the optical auxiliary electrode on the first electrode, and the organic light-emitting device may use the optical auxiliary layer on the hole transport region. The optical auxiliary layer may consist of an organic material.
In one or more embodiments, at least one of the subpixels may include an optical auxiliary electrode between the first electrode and the hole transport region instead of the optical auxiliary layer.
In an embodiment, an optical auxiliary electrode is arranged in the first subpixel among the organic light-emitting device including the plurality of subpixels, and the optical auxiliary layer may be arranged in some of or all of the subpixels excluding the first subpixel. That is, the first subpixel of the organic photodiode and the organic light-emitting device may use an optical auxiliary electrode, and some or all of the other subpixels of the organic light-emitting device may use an optical auxiliary layer. In this case, the organic photodiode has a thickness identical to that of the optical auxiliary electrode of the first subpixel. In an embodiment, at least one of the subpixels excluding the first subpixel may not include an optical auxiliary layer.
In one or more embodiments, the optical auxiliary electrode may be arranged in every subpixel of the organic light-emitting device. That is, the organic photodiode and the organic light-emitting device may both use the optical auxiliary electrode.
The thickness of the optical auxiliary electrode in the organic light-emitting device may be proportional to the wavelength of light emitted from the subpixel in which the optical auxiliary electrode is included. In an embodiment, at least one of the subpixels excluding the first subpixel may not include an optical auxiliary electrode.
When an optical auxiliary layer on the hole transport region is used in the organic photodiode and the organic light-emitting device of the related art, the higher the resolution, that is, the smaller the size of the device, the harder it may be for the auxiliary layer to be patterned into layers for an organic photodiode and an organic light-emitting device. Therefore, the optical auxiliary layers of the organic photodiode and the neighboring subpixel of the organic light-emitting device may be connected to each other, resulting in a lateral current leakage by the optical auxiliary layer. On the other hand, according to the present embodiment, because the optical auxiliary electrode of the organic photodiode and the optical auxiliary layer of the organic light-emitting device are formed in different layers, there may be more margin for patterning, and the lateral current leakage by the optical auxiliary layer may be reduced.
In addition, by using the optical auxiliary electrode instead of the optical auxiliary layer emission layer consisting of organic materials, the thickness of the organic layer between the first electrode and the second electrode in the organic photodiode may decrease, thereby increasing an extraction field, leading to an increase in external quantum efficiency. Furthermore, when using an organic optical auxiliary layer in the organic photodiode as in the related art, an additional organic deposition chamber is required, but when using the optical auxiliary electrode according to the present embodiment, an additional deposition chamber is not necessary, and thus, the process may be simplified.
In and embodiment, the first subpixel may be adjacent to the organic photodiode.
The organic photodiode may receive light of the same wavelength as that of light emitted by the first subpixel. In this case, the organic photodiode has a resonance distance identical to that of the first subpixel.
The plurality of subpixels may each independently emit light of the same color or different colors. The plurality of subpixels may each independently emit, for example, red light, green light, or blue light. For example, the organic light-emitting device may include three subpixels, and the subpixels may each independently emit red light, green light, or blue light. The plurality of subpixels may emit light of any color other than red light, green light, and blue light. The plurality of subpixels may each independently emit light of different colors that may generate white light when mixed together. In an embodiment, one of the plurality of subpixels may emit far-infrared light, and the other subpixels may emit light of different colors. One of the plurality of subpixels may emit far-infrared light, and the other subpixels may each independently emit light of different colors that may generate white light when mixed together. For example, the organic light-emitting device may include four subpixels, and the subpixels may each independently emit far-infrared light, red light, green light, or blue light.
The thickness of the optical auxiliary layer in each subpixel may be independent of each other. In this case, the thickness of the optical auxiliary layer may be proportional to the wavelength of light emitted from the subpixel in which the optical auxiliary layer is included.
The organic photodiode and the organic light-emitting device may use the first electrode, the second electrode, the hole transport region and electron transport region, and the capping layer as a common layer. In the disclosure, the hole transport region may be referred to as the first common layer, and the electron transport region may be referred to as the second common layer.
In an embodiment, the first electrode of each subpixel of the organic photodiode and the organic light-emitting device and organic light emitting elements may be patterned and electrically separated from each other.
The organic photodiode and the organic light-emitting device may form a pixel, and the electronic device may include a plurality of the pixels.
The electronic device may be applied to all electronic products using a display panel. The electronic device may be applied to a display apparatus having various functions, for example, a fingerprint sensor, a blood pressure sensor, an oxygen saturation measurement, a touch sensor, a light sensor, a proximity sensor, and the like.
Referring to
The substrates 601 and 602 may each independently be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer (not shown) and a thin-film transistor (not shown) may be arranged on the substrate 601.
The buffer layer serves to prevent infiltration of impurities through the substrate 601 and provide a flat surface on the substrate 601. The thin-film transistor is arranged on the buffer layer, and may include an activation layer, a gate electrode, a source electrode, and a drain electrode.
In an embodiment, the thin-film transistor may be electrically connected to the organic light-emitting device 500 to drive the same. One of the source electrode and the drain electrode may be electrically connected to the first electrode 510 of the organic light-emitting device 500.
In one or more embodiments, the thin-film transistor may be electrically connected to the organic photodiode 400. One of the second electrode and the drain electrode may be electrically connected to the first electrode 410 of the organic photodiode 400.
In an embodiment, the first electrode 410 may be an anode, and the second electrode 450 may be a cathode. That is, by applying a reverse bias between the first electrode 410 and the second electrode 450 to drive the organic photodiode 400, the electronic device 100 may detect light incident on the organic photodiode 400, generate charges, and extract a current.
In an embodiment, the first electrode 510 may be an anode, and the second electrode 450 may be a cathode. That is, in the organic light-emitting device 500, holes injected to the first electrode 510 and electrons injected to the second electrode 450 recombine in the emission layer 530 to form excitons, and the excitons may transition from an excited state to a ground state, thereby generating light.
The first electrodes 410 and 510 are separated from each other and patterned, and are electrically separated, and thus, the organic photodiode 400 and the organic light-emitting device 500 may form independent subpixels. Descriptions of the first electrodes 410 and 510 be as described for the anode 110 provided herein.
A pixel defining layer 405 may be formed at edges of the first electrodes 410 and 510. The pixel defining layer 405 defines a pixel region, and may electrically separate the first electrodes 410 and 510 from each other. The pixel define layer 405 may include, for example, known various organic insulating material (for example, silicone-based materials, and the like), inorganic insulating materials, or organic/inorganic composite insulating materials. The pixel define layer 405 may be a transmissive film that transmits visible light, or a blocking film that blocks visible light.
The optical auxiliary electrode 412 is a layer for adjusting the optical distance for microresonance of the organic photodiode 400. The optical auxiliary electrode 412 may be as previously described herein.
The first common layer 420 and the second common layer 440 may be arranged as common layers over both the organic photodiode 400 and the organic light-emitting device 500. The first common layer 420 may include, for example, a hole injection layer, a hole transport layer, an electron blocking layer, or a combination thereof. The second common layer 440 may include, for example, a buffer layer, a hole blocking layer, an electron transport layer, an electron injection layer, or a combination thereof. The first common layer 420 and the second common layer 440 may each be defined as described herein.
As such, since the electronic device 100 uses common layers over the organic photodiode 400 and the organic light-emitting device 500, the two devices may be arranged in-pixel in the electronic device 100. In this regard, a manufacturing process of the electronic device 100 may be also simplified.
In the organic light-emitting device 500, the optical auxiliary layer 524 is arranged on the first common layer 420. The optical auxiliary layer 524 may adjust the optical distance for the microresonance of the organic light-emitting device 500. The optical auxiliary layer 524 may be as previously described herein.
In the organic photodiode 400, the photoactive layer 430 is arranged on the first common layer 420. In the organic light-emitting device 500, the emission layer 530 is formed on the optical auxiliary layer 524. The emission layer 530 may be formed by using one or more known light-emitting materials. For example, as the light-emitting material, an organic material, an inorganic material, or a quantum dot may be used. The photoactive layer 430 may be understood by referring to the descriptions provided herein, and the emission layer 530 may be understood by referring to the descriptions below.
The second common layer 440 and the second electrode 450 may be formed as common layers on the photoactive layer 430 and the emission layer 530 throughout the organic photodiode 400 and the organic light-emitting device 500. The second electrode 450 may be as described for the cathode 150 provided herein.
A capping layer (not shown) may be arranged on the second electrode 450. A material that can be used for the capping layer may include an organic material and/or inorganic material as described above. The capping layer may serve not only to protect the organic photodiode 400 and the organic light-emitting device 500, but also to help light generated from the organic light-emitting device 500 emitted efficiently. A description of the capping layer (not shown) may refer to that of the capping layer provided in the specification.
An encapsulation portion 490 may be arranged on the capping layer. The encapsulation portion 490 may be arranged on the organic photodiode 400 and the organic light-emitting device 500, and thus may serve to protect the organic photodiode 400 and the organic light-emitting device 500 from moisture or oxygen. The encapsulation portion 490 may include: an inorganic film including silicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide, indium zinc oxide, or a combination thereof; an organic film including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, an acrylic resin (for example, polymethyl methacrylate, polyacrylic acid, or the like), an epoxy-based resin (for example, aliphatic glycidyl ether (AGE), or the like), or a combination thereof; or a combination of the inorganic film and the organic film.
The electronic apparatus 100 may be, for example, a display apparatus. Since the electronic device 100 includes both the organic photodiode 400 and the organic light-emitting device 500, the electronic apparatus 100 may be a display apparatus that exhibits a function of light detection.
Referring to
The organic photodiode 400 includes a first electrode 410, an optical auxiliary electrode 412, a first common layer 420, a first auxiliary layer 427, a photoactive layer 430, a second common layer 440, and a second electrode 450.
The first organic light-emitting device 501 includes a first electrode 511, the first common layer 420, a first auxiliary layer 521, a first emission layer 531, the second common layer 440, and the second electrode 450.
The second organic light-emitting device 502 includes a first electrode 512, the first common layer 420, a second auxiliary layer 522, a second emission layer 532, the second common layer 440, and the second electrode 450.
The third organic light-emitting device 503 includes a first electrode 513, the first common layer 420, a third auxiliary layer 523, a third emission layer 533, the second common layer 440, and the second electrode 450.
The organic photodiode 400 may be electrically connected to the thin-film transistor to drive the organic photodiode 400. The first electrode 410 of the organic photodiode 400 may be electrically connected to one of a source electrode and a drain electrode of the thin-film transistor.
Each of the organic light-emitting devices 501, 502, and 503 may be electrically connected to different thin-film transistors to drive the organic light-emitting devices 501, 502, and 503. Each of the first electrodes 511, 512, and 513 in the organic light-emitting devices 501, 502, and 503 may be electrically connected to one of a source electrode and a drain electrode of different thin-film transistors.
In an embodiment, the first electrodes 511, 512, and 513 may each be an anode, and the second electrode 450 may be a cathode. That is, in the organic light-emitting devices 501, 502, and 503, holes injected to the first electrodes 511, 512, and 513 and electrons injected to the second electrode 450 may recombine in the emission layers 531, 532, and 533 to form excitons, and the excitons may transition from an excited state to a ground state, thereby generating light.
Descriptions of the first electrodes 410, 511, 512, and 513 may be understood by referring to the descriptions of the anode 110.
The optical auxiliary electrode 412 is a layer for adjusting the optical distance for microresonance of the organic photodiode 400. The optical auxiliary electrode 412 may be as previously described herein.
The pixel defining layer 405 is formed at the edge of the first electrodes 410, 511, 512, and 513. The pixel defining layer 405 defines a pixel region, and may electrically separate the first electrodes 410, 511, 512, and 513 from each other. The pixel define layer 405 may include, for example, known various organic insulating material (for example, silicone-based materials, and the like), inorganic insulating materials, or organic/inorganic composite insulating materials. The pixel define layer 405 may be a transmissive film that transmits visible light, or a blocking film that blocks visible light.
The first common layer 420 and the second common layer 440 may be arranged as common layers over the organic photodiode 400 and the first organic light-emitting device 501, the second organic light-emitting device 502, and the third organic light-emitting device 503. The first common layer 420 may include, for example, a hole injection layer, a hole transport layer, an electron blocking layer, or a combination thereof. The second common layer 440 may include, for example, a buffer layer, a hole blocking layer, an electron transport layer, an electron injection layer, or a combination thereof.
On the first common layer 420, the optical auxiliary layers 521 and 522 are formed to correspond to the organic light-emitting devices 501 and 502, respectively. The optical auxiliary layers 521 and 522 may be understood by referring to the descriptions of the optical auxiliary layer.
On the first common layer 420, the photoactive layer 430 is formed to correspond to the organic photodiode 400.
On the first common layer 420, the emission layers 531, 532, and 533 are formed to correspond to the organic light-emitting devices 501, 502, and 503, respectively.
The first emission layer 531 may emit first-color light, the second emission layer 532 may emit second-color light, and the third emission layer 533 may emit third-color light.
A maximum emission wavelength of the first color light, a maximum emission wavelength of the second color light, and a maximum emission wavelength of the third color light may be identical to or different from each other. For example, each of the maximum emission wavelength of the first-color light and the maximum emission wavelength of the second-color light may be longer than the maximum emission wavelength of the third-color light.
In an embodiment, the first color light may be red light, the second color light may be green light, and the third color light may be blue light, but embodiments of the disclosure are not limited thereto. Therefore, the electronic device 100 may emit full color light. The first color light, the second color light, and the third color light are not limited to red light, green light, and blue light, respectively, and may be a combination of light of different colors, as long as mixed light thereof is white light.
The first emission layer 531, the second emission layer 532, and the third emission layer 533 may each be formed by using various luminescent materials known in the art. For example, as the light-emitting material, an organic material, an inorganic material, or a quantum dot may be used.
The organic photodiode 400, the first organic light-emitting device 501, the second organic light-emitting device 502, and the third organic light-emitting device 503 may all form a pixel, and may each be a sub-pixel constituting the pixel.
In an embodiment, the pixel may include at least one organic photodiode 400.
The second common layer 440 and the second electrode 450 may be sequentially formed over the photoactive layer 430 and the emission layers 531, 532, and 533.
A capping layer (not shown) may be arranged on the second electrode 450.
An encapsulation portion 490 may be arranged on the capping layer. The encapsulation portion 490 may be arranged on the organic photodiode 400 and the organic light-emitting devices 501, 502, and 503, and thus may serve to protect the organic photodiode 400 and the organic light-emitting devices 501, 502, and 503 from moisture or oxygen. The encapsulation portion 490 may include: an inorganic film including silicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide, indium zinc oxide, or a combination thereof; an organic film including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, an acrylic resin (for example, polymethyl methacrylate, polyacrylic acid, or the like), an epoxy-based resin (for example, aliphatic glycidyl ether (AGE), or the like), or a combination thereof; or a combination of the inorganic film and the organic film.
The electronic device 200 may be a display apparatus. Since the electronic device 200 includes the organic photodiode 400 and the first organic light-emitting device 501, the second organic light-emitting device 502, and the third organic light-emitting device 503, the electronic device 200 may be a full-color display apparatus that exhibits a function of light detection.
The electronic device 200 of
For example, red light, green light, and blue light may be emitted from the organic light-emitting devices 501, 502, and 503, respectively.
The electronic device 200 according to an embodiment may have a function of detecting prints of an object, e.g., a finger that is in contact with the electronic device. For example, as illustrated in
As shown in
The layers included in the hole transport region, the activation layer, and the layers included in the electron transport region may be formed in certain regions by using one or more suitable methods selected from vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, ink-jet printing, laser-printing, and laser-induced thermal imaging (LITI).
When the layers of the hole transport region, the activation layer, and the layers of the electron transport region are formed by vacuum deposition, deposition conditions may be selected from within a deposition temperature of about 100° C. to about 500° C., a vacuum degree of about 10−8 torr to about 10−3 torr, and a deposition rate of about 0.01 Å/sec to about 100 Å/sec, in consideration of the material and structure of a layer to be formed.
The term “C3-C60 carbocyclic group” as used herein refers to a cyclic group consisting of carbon only as a ring-forming atom and having three to sixty carbon atoms, and the term “C1-C60 heterocyclic group” as used herein refers to a cyclic group that has one to sixty carbon atoms and further has, in addition to carbon, a heteroatom as a ring-forming atom. The C3-C60 carbocyclic group and the C1-C60 heterocyclic group may each be a monocyclic group consisting of one ring or a polycyclic group in which two or more rings are condensed with each other. For example, the C1-C60 heterocyclic group has 3 to 61 ring-forming atoms.
The “cyclic group” as used herein may include the C3-C60 carbocyclic group, and the C1-C60 heterocyclic group.
The term “π electron-rich C3-C60 cyclic group” as used herein refers to a cyclic group that has three to sixty carbon atoms and does not include *—N═*′ as a ring-forming moiety, and the term “π electron-deficient nitrogen-containing C1-C60 cyclic group” as used herein refers to a heterocyclic group that has one to sixty carbon atoms and includes *—N═*′ as a ring-forming moiety.
For example,
The terms “the cyclic group, the C3-C60 carbocyclic group, the C1-C60 heterocyclic group, the π electron-rich C3-C60 cyclic group, or the π electron-deficient nitrogen-containing C1-C60 cyclic group” as used herein refer to a group condensed to any cyclic group, a monovalent group, or a polyvalent group (for example, a divalent group, a trivalent group, a tetravalent group, etc.) according to the structure of a formula for which the corresponding term is used. In an embodiment, “a benzene group” may be a benzo group, a phenyl group, a phenylene group, or the like, which may be easily understand by one of ordinary skill in the art according to the structure of a formula including the “benzene group.”
Examples of the monovalent C3-C60 carbocyclic group and the monovalent C1-C60 heterocyclic group are a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group. Examples of the divalent C3-C60 carbocyclic group and the monovalent C1-C60 heterocyclic group are a C3-C10 cycloalkylene group, a C1-C10 heterocycloalkylene group, a C3-C10 cycloalkenylene group, a C1-C10 heterocycloalkenylene group, a C6-C60 arylene group, a C1-C60 heteroarylene group, a divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group.
The term “C1-C60 alkyl group” as used herein refers to a linear or branched aliphatic hydrocarbon monovalent group that has one to sixty carbon atoms, and specific examples thereof are a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, an n-pentyl group, a tert-pentyl group, a neopentyl group, an isopentyl group, a sec-pentyl group, a 3-pentyl group, a sec-isopentyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, an n-heptyl group, an isoheptyl group, a sec-heptyl group, a tert-heptyl group, an n-octyl group, an isooctyl group, a sec-octyl group, a tert-octyl group, an n-nonyl group, an isononyl group, a sec-nonyl group, a tert-nonyl group, an n-decyl group, an isodecyl group, a sec-decyl group, and a tert-decyl group. The term “C1-C60 alkylene group” as used herein refers to a divalent group having the same structure as the C1-C60 alkyl group.
The term “C2-C60 alkenyl group” as used herein refers to a monovalent hydrocarbon group having at least one carbon-carbon double bond in the middle or at the terminus of the C2-C60 alkyl group, and examples thereof are an ethenyl group, a propenyl group, and a butenyl group. The term “C2-C60 alkenylene group” as used herein refers to a divalent group having the same structure as the C2-C60 alkenyl group.
The term “C2-C60 alkynyl group” as used herein refers to a monovalent hydrocarbon group having at least one carbon-carbon triple bond in the middle or at the terminus of the C2-C60 alkyl group, and examples thereof include an ethynyl group, a propynyl group, and the like. The term “C2-C60 alkynylene group” as used herein refers to a divalent group having the same structure as the C2-C60 alkynyl group.
The term “C1-C60 alkoxy group” as used herein refers to a monovalent group represented by —OA101 (wherein A101 is the C1-C60 alkyl group), and examples thereof include a methoxy group, an ethoxy group, and an isopropyloxy group.
The term “C3-C10 cycloalkyl group” as used herein refers to a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, and examples thereof are a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, an adamantanyl group, a norbornanyl group (or bicyclo[2.2.1]heptyl group), a bicyclo[1.1.1]pentyl group, a bicyclo[2.1.1]hexyl group, and a bicyclo[2.2.2]octyl group. The term “C3-C10 cycloalkylene group” as used herein refers to a divalent group having the same structure as the C3-C10 cycloalkyl group.
The term “C1-C10 heterocycloalkyl group” as used herein refers to a monovalent cyclic group of 1 to 10 carbon atoms, further including, in addition to carbon atoms, at least one heteroatom, as ring-forming atoms, and specific examples are a 1,2,3,4-oxatriazolidinyl group, a tetrahydrofuranyl group, and a tetrahydrothiophenyl group. The term “C1-C10 heterocycloalkylene group” as used herein refers to a divalent group having the same structure as the C1-C10 heterocycloalkyl group.
The term C3-C10 cycloalkenyl group used herein refers to a monovalent cyclic group that has three to ten carbon atoms and at least one carbon-carbon double bond in the ring thereof and no aromaticity, and specific examples thereof are a cyclopentenyl group, a cyclohexenyl group, and a cycloheptenyl group. The term “C3-C10 cycloalkenylene group” as used herein refers to a divalent group having the same structure as the C3-C10 cycloalkenyl group.
The term “C1-C10 heterocycloalkenyl group” as used herein refers to a monovalent cyclic group of 1 to 10 carbon atoms, further including, in addition to carbon atoms, at least one heteroatom, as ring-forming atoms, and having at least one carbon-carbon double bond in the cyclic structure thereof. Examples of the C1-C10 heterocycloalkenyl group include a 4,5-dihydro-1,2,3,4-oxatriazolyl group, a 2,3-dihydrofuranyl group, and a 2,3-dihydrothiophenyl group. The term “C1-C10 heterocycloalkenylene group” as used herein refers to a divalent group having the same structure as the C1-C10 heterocycloalkenyl group.
The term “C6-C60 aryl group” as used herein refers to a monovalent group having a carbocyclic aromatic system of 6 to 60 carbon atoms, and the term “C6-C60 arylene group” as used herein refers to a divalent group having a carbocyclic aromatic system of 6 to 60 carbon atoms. Examples of the C6-C60 aryl group are a phenyl group, a pentalenyl group, a naphthyl group, an azulenyl group, an indacenyl group, an acenaphthyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a heptalenyl group, a naphthacenyl group, a picenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, and an ovalenyl group. When the C6-C60 aryl group and the C6-C60 arylene group each include two or more rings, the rings may be condensed with each other.
The term “C1-C60 heteroaryl group” as used herein refers to a monovalent group having a heterocyclic aromatic system of 1 to 60 carbon atoms, further including, in addition to carbon atoms, at least one heteroatom, as ring-forming atoms. The term “C1-C60 heteroarylene group” as used herein refers to a divalent group having a heterocyclic aromatic system of 1 to 60 carbon atoms, further including, in addition to carbon atoms, at least one heteroatom, as ring-forming atoms. Examples of the C1-C60 heteroaryl group are a pyridinyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, a benzoquinolinyl group, an isoquinolinyl group, a benzoisoquinolinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a quinazolinyl group, a benzoquinazolinyl group, a cinnolinyl group, a phenanthrolinyl group, a phthalazinyl group, and a naphthyridinyl group. When the C1-C60 heteroaryl group and the C1-C60 heteroarylene group each include two or more rings, the rings may be condensed with each other.
The term “monovalent non-aromatic condensed polycyclic group” as used herein refers to a monovalent group (for example, having 8 to 60 carbon atoms) having two or more rings condensed to each other, only carbon atoms as ring-forming atoms, and no aromaticity in its entire molecular structure. Examples of the monovalent non-aromatic condensed polycyclic group are an indenyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, an indenophenanthrenyl group, and an indeno anthracenyl group. The term “divalent non-aromatic condensed polycyclic group” as used herein refers to a divalent group having the same structure as the monovalent non-aromatic condensed polycyclic group described above.
The term “monovalent non-aromatic condensed heteropolycyclic group” as used herein refers to a monovalent group (for example, having 1 to 60 carbon atoms) having two or more rings condensed to each other, further including, in addition to carbon atoms, at least one heteroatom, as ring-forming atoms, and having non-aromaticity in its entire molecular structure. Examples of the monovalent non-aromatic condensed heteropolycyclic group are a pyrrolyl group, a thiophenyl group, a furanyl group, an indolyl group, a benzoindolyl group, a naphthoindolyl group, an isoindolyl group, a benzoisoindolyl group, a naphthoisoindolyl group, a benzosilolyl group, a benzothiophenyl group, a benzofuranyl group, a carbazolyl group, a dibenzosilolyl group, a dibenzothiophenyl group, a dibenzofuranyl group, an azacarbazolyl group, an azafluorenyl group, an azadibenzosilolyl group, an azadibenzothiophenyl group, an azadibenzofuranyl group, a pyrazolyl group, an imidazolyl group, a triazolyl group, a tetrazolyl group, an oxazolyl group, an isoxazolyl group, a thiazolyl group, an isothiazolyl group, an oxadiazolyl group, a thiadiazolyl group, a benzopyrazolyl group, a benzimidazolyl group, a benzoxazolyl group, a benzothiazolyl group, a benzoxadiazolyl group, a benzothiadiazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an imidazotriazinyl group, an imidazopyrazinyl group, an imidazopyridazinyl group, an indeno carbazolyl group, an indolocarbazolyl group, a benzofurocarbazolyl group, a benzothienocarbazolyl group, a benzosilolocarbazolyl group, a benzoindolocarbazolyl group, a benzocarbazolyl group, a benzonaphthofuranyl group, benzonaphthothiophenyl group, a benzonaphthosilolyl group, a benzofurodibenzofuranyl group, a benzofurodibenzothiophenyl group, and a benzothienodibenzothiophenyl group. The term “divalent non-aromatic condensed heteropolycyclic group” as used herein refers to a divalent group having the same structure as the monovalent non-aromatic condensed heteropolycyclic group described above.
The term “C6-C60 aryloxy group” as used herein indicates —OA102 (wherein A102 is a C6-C60 aryl group), and the term “C6-C60 arylthio group” as used herein indicates —SA103 (wherein A103 is a C6-C60 aryl group).
The term “C7-C60 aryl alkyl group” used herein refers to -A104A105 (where A104 may be a C1-C54 alkylene group, and A105 may be a C6-C59 aryl group), and the term C2-C60 heteroaryl alkyl group” used herein refers to -A106A107 (where A106 may be a C1-C59 alkylene group, and A107 may be a C1-C59 heteroaryl group).
The term “R10a” as used herein refers to:
The term “heteroatom” as used herein refers to any atom other than a carbon atom. Examples of the heteroatom are O, S, N, P, Si, B, Ge, Se, and a combination thereof.
The term “third-row transition metal” used herein includes hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), and the like.
The term “Ph” as used herein refers to a phenyl group, the term “Me” as used herein refers to a methyl group, the term “Et” as used herein refers to an ethyl group, the term “tert-Bu” or “But” as used herein refers to a tert-butyl group, and the term “OMe” as used herein refers to a methoxy group.
The term “biphenyl group” as used herein refers to “a phenyl group substituted with a phenyl group.” In other words, the “biphenyl group” is a substituted phenyl group having a C6-C60 aryl group as a substituent.
The term “terphenyl group” as used herein refers to “a phenyl group substituted with a biphenyl group.” In other words, the “terphenyl group” is a substituted phenyl group having, as a substituent, a C6-C60 aryl group substituted with a C6-C60 aryl group.
The expression “* and *” as used herein, unless defined otherwise, each refer to a binding site to a neighboring atom in a corresponding formula or moiety.
Hereinafter, the manufacture of electronic devices according to embodiments of the disclosure and evaluation results thereof will be described with reference to examples.
A display element including, side by side, an organic photodiode and a green organic light-emitting device was manufactured.
An IZO optical auxiliary electrode having a thickness of 300 Å was formed in an organic photodiode region on an anode substrate of ITO 100 Å/Ag 1,000 Å/ITO 100 Å, the substrate having an anode pattern formed thereon, by sputtering. The substrate on which the optical auxiliary electrode is formed was cleaned with alcohol and pure water each for 10 minutes, and then cleaned by exposure to ultraviolet rays and ozone for 10 minutes.
HAT-CN was vacuum-deposited on the substrate on which the optical auxiliary electrode is formed to form a hole injection layer having a thickness of 100 Å, and HT3 was vacuum-deposited on the hole injection layer to form a hole transport layer having a thickness of 1,200 Å.
Compound OC1 was deposited on the hole transport layer of the organic light-emitting device region to form an optical auxiliary layer having a thickness of 350 Å.
SubPc was deposited on the hole transport layer of the organic photodiode region to form a layer having a thickness of 80 Å, and C60 was deposited on the layer at a thickness of 340 Å, thereby forming a photoactive layer having a thickness of 420 Å.
Compounds H36, H39, and PD41 were co-deposited on the hole transport layer of the organic light-emitting device region at a weight ratio of 45:45:10 to form a green emission layer having a thickness of 380 Å.
Then, BAlq was vacuum-deposited on the photoactive layer and the emission layer to form a hole blocking layer having a thickness of 50 Å, and ET1 was vacuum-deposited on the hole blocking layer to form an electron transport layer having a thickness of 310 Å.
15 Å of Liq was formed on the electron transport layer to form an electron injection layer, and 85 Å of MgAg was deposited on the electron injection layer to form a cathode. Compound OC1 was deposited on the cathode to form a capping layer having a thickness of 850 Å, thereby completing the manufacture of an electronic device including, side by side, an organic photodiode and a green organic light-emitting device.
A device was manufactured in the same manner as in Example 1 except that an optical auxiliary electrode was formed at a thickness of 300 Å in each of the organic photodiode region and the organic light-emitting device region, and an optical auxiliary layer was not formed on the hole transport layer of the organic light-emitting device region.
A device was manufactured in the same manner as in Example 1 except that an optical auxiliary electrode of the organic photodiode having a thickness of 750 Å was formed, an optical auxiliary layer in the organic light-emitting device region having a thickness of 750 Å was formed, an emission layer in the organic light-emitting device region was formed as a red emission layer having a thickness of 420 Å by co-depositing Compounds H127 and PD11 at a weight ratio of 100:2, and SubNc was used instead of SubPc in the photoactive layer in the organic photodiode region.
A device was manufactured in the same manner as in Example 3 except that an optical auxiliary electrode was formed at a thickness of 750 Å in each of the organic photodiode region and the organic light-emitting device region, and an optical auxiliary layer was not formed on the hole transport layer of the organic light-emitting device region.
A device was manufactured in the same manner as in Example 1 except that an optical auxiliary electrode was not formed in the organic photodiode region, and an optical auxiliary layer having a thickness of 350 Å was formed in each of the organic photodiode region and the organic light-emitting device region.
A device was manufactured in the same manner as in Example 3 except that an optical auxiliary electrode was not formed in the organic photodiode region, and an optical auxiliary layer having a thickness of 750 Å was formed in each of the organic photodiode region and the organic light-emitting device region.
The EQE, dark current density, and lateral current leakage of the devices manufactured according to Examples 1 to 4 and Comparative Examples 1 and 2 were measured by using an external quantum efficiency measurement device (K3100, MacScience, Korea) and a current meter (Keithley, Tektronix, U.S.A.), and the results thereof are shown in Table 1.
Referring to Table 1, the EQE of Examples 1 and 2 were found to be higher than that of Comparative Example 1, the lateral current leakage of Examples 1 and 2 was found to be lower than that of Comparative Example 1, and the dark current density of Example 1 was found to be lower those of Comparative Examples 1 and 2. These values would make Examples 1 and 2 more desirable than Comparative Examples 1 and 2.
In addition, the EQE of Examples 3 and 4 were found to be higher than that of Comparative Example 2, the lateral current leakage of Examples 3 and 4 was found to be lower than that of Comparative Example 2, and the current densities of Examples 3 and 4 were found to be lower than that of Comparative Example 2. These values would make Examples 3 and 4 more desirable than Comparative Example 2.
In the electronic device according to the one or more embodiments, because the optical auxiliary electrode is additionally formed on the anode instead of using an organic optical auxiliary layer to adjust the optical distance for microresonance in the organic photodiode, formation of the organic optical auxiliary layer at a high resolution may be easy, the EQE may be improved due to the decrease in the thickness of the organic layer, and the lateral current leakage through the organic optical auxiliary layer between the neighboring organic photodiode and organic light-emitting device may be decreased.
It should be understood that embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments. While one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the following claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2023-0006300 | Jan 2023 | KR | national |
