The present invention relates to the field of electronic power supply, and more particularly to an electronic system enabling to produce multiple power supply output voltages using only one regulation loop.
Existing electronic circuits are not designed to be supplied with the same power supply voltage. For example some digital circuit may require a 1.2 V power supply, whereas a flash memory requires a 1.5 V power supply.
As a result, any electronic system needs to have a power supply able to output the power supply voltage required for the components it includes.
Most electronic systems comprise multiple sub-blocks which cannot be all supplied with the same voltage. Consequently, such systems must include a power supply unit able to deliver multiple different power supply output voltages at the same time.
The architecture shown on
Consequently, there is a need for an electronic system including a power supply able to output a plurality of different power supply output voltage to various sub-blocks, with a lower silicon area and current consumption than existing power supply architectures.
For this purpose and according to a first aspect, this invention therefore relates to an electronic system comprising:
Such a system enables to generate as many power supply output voltages as required by the sub-blocks of the system to be powered up, with only one amplifier and one regulation loop.
In an embodiment, a last stage of said amplifier comprises at least one component configured such that when the potential at one of its terminals is set to a first power supply reference voltage, a second power supply reference voltage is generated at the other terminal of said component.
It enables to generate easily multiple different voltage outputs of the amplifier with reduced silicon area cost and current consumption.
Said component may be among a resistance, a diode, a MOS transistor, or a switched capacitor.
Said sub blocks may be among a flash memory, a digital circuit, an analog circuit or an input/output interface.
As an example, said first sub block may be a digital circuit to be supplied with a first power supply output voltage equal to 1.2 V, a second sub block may be a flash memory to be supplied with a second power supply output voltage equal to 1.5 V and said component may be a resistance set to a value equal to 300 mV divided by the current flowing through it.
According to a second aspect, this invention therefore relates also to a System-On-Chip comprising an electronic system according to the first aspect.
To the accomplishment of the foregoing and related ends, one or more embodiments comprise the features hereinafter fully described and particularly pointed out in the claims.
The following description and the annexed drawings set forth in detail certain illustrative aspects and are indicative of but a few of the various ways in which the principles of the embodiments may be employed. Other advantages and novel features will become apparent from the following detailed description when considered in conjunction with the drawings and the disclosed embodiments are intended to include all such aspects and their equivalents.
According to a first aspect, as shown on
Such an electronic system may be embedded in a portable electronic device. It may for example be included in a smartcard chip or included in a System-On-Chip (SOC).
In order to generate the voltages to be supplied to the sub-blocks, the system 1 also includes a differential amplifier 3. This amplifier has a specific design with a plurality of outputs. An input reference voltage VRF is applied to a first input of the amplifier. In the example show on
In order to make the amplifier output constant voltages equal to desired values, the system comprises a capacitor less voltage regulation loop with a transistor feedback. This loop is connected on one end to a second input of the amplifier. In the example of
The voltage at the second input of the amplifier is noted VFB. The loop is connected on the other end to a first output of the amplifier, outputting a power supply reference voltage VG1. This loop includes a first MOS transistor 40 and a variable resistor 5. In the example shown on
The voltage at the source of the first transistor is noted VDD_VFB, the resistance between the source of the first transistor and the second input of the amplifier is noted Rup, the resistance between the second input of the amplifier and the ground is noted Rdown. In such a configuration, when the amplifier is supposed to be ideal (VRF=VFB), VDD_VFB and VG1 verify the following equation:
VDD_VFB=VRF*(Rup+Rdown)/Rdown=VG1−VTH
Finally, in order to supply various power supply output voltages to the sub-blocks of the system, the system includes a plurality of additional MOS transistors 41, 42 . . . . Each output of the amplifier is connected to the gate of one of these additional MOS transistors and the drain or source of each additional transistor is connected to one of the sub-blocks of the system in order to supply it with its required voltage.
In the example of
The first transistor 40 has a grid width W and a grid length L. The first additional transistor 41 has a grid width W1 and a grid length L1. Let's introduce scaling factor m1 defined by the relation: W1/L1=m1*W/L. If the currents flowing out of the sources of the first transistor and of the first additional transistor are respectively named IFB and IDD1, IFB is proportional to W/L*(VG1-VDD_FB-VTH)2 and IDD1 to W1/L1*(VG1-VDD1-VTH)2. For a given value of IDD1 drained by the first sub-block, the ratio W1/L1 of the first additional transistor may be set such that IFB*L/W=IDD1*L1/W1, ie m1=IDD1/IFB, with IFB equal to VDD_FB/(Rup+Rdown). In such a configuration, the power supply output voltage VDD1 supplied to the first sub-block by the first additional MOS transistor 41 connected to the first output of the amplifier is almost equal to the voltage VDD_VFB at the source of the first transistor of the regulation loop, which also has its gate connected to the first output of the amplifier, i.e. VDD1=VDD_VFB.
Consequently, in order to supply the first sub-block with its required power supply output voltage VDD1, the input reference voltage VRF and the variable resistor are configured such that a first sub block is supplied with its required power supply output voltage VDD1 by the MOS transistor it is connected to. Said differently, VRF and Rup/(Rup+Rdown) are set such that:
VRF*(Rup+Rdown)/Rdown=VDD1
Which leads to VG1=VDD1+VTH
Such equations do not take into account voltage fluctuations or offsets due to design imperfections such that the fact that the amplifier is not ideal, variations of the input reference voltage VRF . . . . In order to take into account such imperfections, VDD1 and VG1 may be accurately set by performing a trimming process.
In addition, for each additional transistor i, the voltage VDDi at its terminal connected to the sub-block it supplies and the power supply reference voltage VGi supplied by the output of the amplifier to which its gate is connected verify the following equation: VGi=VDDi+VTHi with VTHi the threshold voltage of the transistor. As described here above for the first additional transistor, the ratio grid width/grid length (Wi/Li=mi*W/L) of each additional transistor may be set to have the desired current flowing out of the source of the transistor towards its sub-block.
In order to supply every sub-blocks with their required power supply output voltage, the amplifier is configured to output on each of its outputs a different power supply reference voltage VG1, VG2 . . . such that each sub block other than the first sub block is supplied with its required power supply output voltage (VDD2 . . . ) by the MOS transistor it is connected to. Said differently, the amplifier is configured to output on its output i a voltage VGi such that VGi=VDDi+VTHi which ensures that the sub-block supplied by the ith additional transistor connected to this output will be supplied with its required power supply output voltage VDDi.
In order to generate a plurality of power supply reference voltages, additional components which generate a voltage offset may be included in the amplifier. More precisely, the last stage of the amplifier may comprise at least one component configured such that when the potential at one of its terminals is set to a first power supply reference voltage VG1, a second power supply reference voltage VG2 . . . is generated at the other terminal of said component.
Such a component may for example be a resistance, a diode, a MOS transistor, switched capacitors . . . .
An example of such an architecture of the amplifier is given on
In such an example, when such an amplifier is used in the configuration of
When VDDi is lower than VDD1, a negative offset is needed. In such a case the component to be added to the amplifier may be inserted between the first output of the amplifier and the output transistor NOUT.
As a result, the system according to the invention enables to generate as many power supply output voltages as required by the sub-blocks of the system to be powered up, with only one amplifier and one regulation loop. Silicon area and power consumption are reduced. Only one trimming process is required to set precisely all the power supply output voltages to their required values.
Number | Date | Country | Kind |
---|---|---|---|
19306329 | Oct 2019 | EP | regional |
Filing Document | Filing Date | Country | Kind |
---|---|---|---|
PCT/EP2020/077420 | 9/30/2020 | WO |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO2021/069281 | 4/15/2021 | WO | A |
Number | Name | Date | Kind |
---|---|---|---|
6570371 | Volk | May 2003 | B1 |
20050231280 | Kurokawa | Oct 2005 | A1 |
20090302815 | Tanzawa | Dec 2009 | A1 |
20100109435 | Ahmadi | May 2010 | A1 |
20120038390 | Raghavan | Feb 2012 | A1 |
20120205978 | Wong | Aug 2012 | A1 |
20140062594 | Sbuell | Mar 2014 | A1 |
20160072447 | Seth | Mar 2016 | A1 |
Entry |
---|
Karki, James, Fully-Differential Amplifiers, Sep. 2016, Texas Instruments, p. 4 (Year: 2016). |
International Search Report (PCT/ISA/210) and Written Opinion (PCT/ISA/237) dated Dec. 1, 2020, by the European Patent Office as the International Searching Authority for current International Application No. PCT/EP2020/077420—[13 pages]. |
Number | Date | Country | |
---|---|---|---|
20230152869 A1 | May 2023 | US |