Claims
- 1. A method of making an electronically tunable dielectric material comprising:
mixing particles of at least one electronically tunable dielectric material and a total of from about 1 to about 80 weight percent of particles of at least two additional metal oxide materials; and sintering the material.
- 2. The method of claim 1, wherein the electronically tunable dielectric particles and the additional metal oxide particles have average particle sizes of from about 0.1 to about 5 micron.
- 3. The method of claim 1, wherein the electronically tunable dielectric particles and the additional metal oxide particles have average particle sizes of from about 1.5 to about 2.5 micron.
- 4. The method of claim 1, wherein the additional metal oxide phases comprise a total of from about 3 to about 65 weight percent of the material.
- 5. The method of claim 1, wherein the additional metal oxide phases comprise a total of from about 5 to about 60 weight percent of the material.
- 6. The method of claim 1, wherein the additional metal oxide phases comprise a total of from about 10 to about 50 weight percent of the material.
- 7. The method of claim 1, wherein the dielectric material consists essentially of two of the additional metal oxide phases.
- 8. The method of claim 7, wherein the two additional metal oxide phases have a weight ratio of from about 1:100 to about 100:1.
- 9. The method of claim 7, wherein the two additional metal oxide phases have a weight ratio of from about 1:10 to about 10:1.
- 10. The method of claim 7, wherein the two additional metal oxide phases have a weight ratio of from about 1:5 to about 5:1.
- 11. The method of claim 1, wherein the at least one electronically tunable dielectric phase is selected from barium strontium titanate, barium titanate, strontium titanate, barium calcium titanate, barium calcium zirconium titanate, lead titanate, lead zirconium titanate, lead lanthanum zirconium titanate, lead niobate, lead tantalate, potassium strontium niobate, sodium barium niobate/potassium phosphate, potassium niobate, lithium niobate, lithium tantalate, lanthanum tantalate, barium calcium zirconium titanate, sodium nitrate, and combinations thereof.
- 12. The method of claim 1, wherein the at least one electronically tunable dielectric phase comprises barium strontium titanate.
- 13. The method of claim 12, wherein the barium strontium titanate is of the formula BaxSr1-xTiO3, where x is from about 0.15 to about 0.6.
- 14. The method of claim 1, wherein the additional metal oxide phases comprise oxides of at least two metals selected from Be, Mg, Ca, Sr, Ba, Ra, Li, Na, K, Rb, Cs, Al, Zr, Zn, Fr, B, Fe, Mn, Cu, Cr, Ti, Ta, Nb, Mo, W, Ni, Pd, Pb, Bi, Si, Sn, Hf and rare earths.
- 15. The method of claim 1, wherein the additional metal oxide phases comprise oxides of at least two metals selected from Mg, Si, Ca, Zr, Ti and Al.
- 16. The method of claim 1, wherein the additional metal oxide phases comprise at least two Mg-containing compounds.
- 17. The method of claim 16, further comprising at least one Mg-free compound.
- 18. The method of claim 17, wherein the Mg-free compound comprises an oxide of a metal selected from Si, Ca, Zr, Ti and Al.
- 19. The method of claim 17, wherein the Mg-free compound comprises a rare earth oxide.
- 20. The method of claim 1, wherein the additional metal oxide phases comprise a Mg-containing compound and a Mg-free compound.
- 21. The method of claim 20, wherein the Mg-free compound comprises an oxide of a metal selected from Si, Ca, Zr, Ti and Al.
- 22. The method of claim 1, wherein the additional metal oxide phases comprise at least one material selected from Mg2SiO4, MgO, CaTiO3, MgZrSrTiO6, MgTiO3, MgAl2O4, WO3, SnTiO4, ZrTiO4, CaSiO3, CaSnO3, CaWO4, CaZrO3, MgTa2O6, MgZrO3, MnO2, PbO, Bi2O3 and La2O3.
- 23. The method of claim 1, wherein the additional metal oxide phases comprise at least one material selected Mg2SiO4, MgO, CaTiO3, MgZrSrTiO6, MgTiO3, MgAl2O4, MgTa2O6 and MgZrO3.
- 24. The method of claim 1, wherein the material has a tunability of at least 25 percent at 8V/micron.
- 25. The method of claim 1, wherein the material has a tunability of at least 30 percent at 8V/micron.
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a divisional of patent application Ser. No. 09/768,690 entitled, “Electronically Tunable, Low-Loss Ceramic Materials Including A Tunable Dielectric Phase And Multiple Metal Oxide Phases” filed Jan. 24, 2001 by Louise C. Sengupta.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09768690 |
Jan 2001 |
US |
Child |
10687506 |
Oct 2003 |
US |