Patent Grant
9372419
The present invention relates to an electrophotographic photosensitive member, and a process cartridge and an electrophotographic apparatus each including the electrophotographic photosensitive member.
An electrophotographic photosensitive member using an organic photo-conductive material (organic electrophotographic photosensitive member) has been intensively studied and developed in recent years.
The electrophotographic photosensitive member basically includes a support and a photosensitive layer formed on the support. In actuality, however, various layers are provided in many cases between the support and the photosensitive layer for the purposes of, for example, covering defects in the surface of the support, protecting the photosensitive layer from electrical destruction, enhancing chargeability, and improving charge injection blocking property from the support to the photosensitive layer.
Of the layers to be provided between the support and the photosensitive layer, a layer containing metal oxide particles is known as a layer to be provided for the purpose of covering defects in the surface of the support. The layer containing metal oxide particles generally has high electro-conductivity (for example, an initial volume resistivity of 1.0×108 to 2.0×1013 Ω·cm) as compared to that of a layer not containing metal oxide particles, and even when the thickness of the layer is increased, a residual potential at the time of forming an image is difficult to increase. Therefore, the layer containing metal oxide particles covers defects in the surface of the support easily. When such layer having high electro-conductivity (hereinafter referred to as “conductive layer”) is provided between the support and the photosensitive layer to cover defects in the surface of the support, an allowable range of defects in the surface of the support is enlarged. As a result, an allowable range of the support to be used is enlarged. Thus, an advantage of enhancing productivity of an electrophotographic photosensitive member is provided.
Patent Literature 1 discloses a technology involving using, in a conductive layer between a support and a photosensitive layer, a titanium oxide particle coated with tin oxide doped with phosphorus or tungsten. In addition, Patent Literature 2 discloses a technology involving using, in a conductive layer between a support and a photosensitive layer, a titanium oxide particle coated with tin oxide doped with phosphorus, tungsten, or fluorine.
In addition, Patent Literature 3 discloses a technology involving incorporating, into the undercoat layer of an electrophotographic photosensitive member obtained by sequentially laminating the undercoat layer, an intermediate layer, and a photosensitive layer on a conductive support, two kinds of metal oxide particles having different average particle diameters. In addition, Patent Literature 4 discloses the following technology. Two or more kinds of electro-conductive particles having different primary particle diameters are incorporated into the intermediate layer of an electrophotographic photosensitive member obtained by laminating the intermediate layer and a photosensitive layer on a conductive support in the stated order, a ratio “A:B” between the average particle diameters of primary particles A having the largest average particle diameter of the electro-conductive particles and primary particles B having the smallest average particle diameter thereof is set to 12:1 to 30:1, and the average particle diameter of the primary particles B is set to 0.05 μm or less. In addition, Patent Literature 4 discloses a technology involving using a tin oxide particle doped with tantalum in the intermediate layer of the electrophotographic photosensitive member.
In addition, Patent Literatures 5 and 6 each describe a technology involving using a tin oxide particle doped with niobium in a conductive layer or an intermediate layer between a support and a photosensitive layer.
In recent years, the following opportunity has been increasing: a large amount of images identical to each other are output from one and the same electrophotographic photosensitive member in a short time period.
In such case, the direction of movement of a recording medium (such as a transfer material (e.g., paper) or an intermediate transfer member) in an electrophotographic photosensitive member and a vertical direction (longitudinal direction when the electrophotographic photosensitive member is cylindrical) do not deviate from each other. Accordingly, for example, when a solid black image or a half-tone image is output after a large amount of images each including vertical lines 306 (lines parallel to the direction of movement of the recording medium) like an image 301 of
In particular, the following opportunity has been recently increasing as compared with olden times in association with the lengthening of the lifetime of an electrophotographic photosensitive member: a large amount of images identical to each other are output from one and the same electrophotographic photosensitive member in a short time period. Accordingly, even in a conventional electrophotographic photosensitive member that has heretofore been able to be sufficiently used, the case where the pattern memory occurs when a large amount of images identical to each other are output in a short time period has started to become apparent. In this respect, each of the electrophotographic photosensitive members including conventional conductive layers disclosed in Patent Literatures 1 to 6 has sometimes involved the emergence of the case where the pattern memory occurs.
On the other hand, in the case of a conductive layer containing a binding material and metal oxide particles, a crack is liable to occur in the conductive layer even when the volume resistivity of the conductive layer is reduced merely by increasing the content of the metal oxide particles in the conductive layer in order that an increase in residual potential at the time of image formation may be suppressed. Accordingly, the following necessity arises: while the occurrence of the crack of the conductive layer is suppressed, the occurrence of a pattern memory is suppressed and the increase of the residual potential is suppressed.
In view of the foregoing, the present invention is directed to providing an electrophotographic photosensitive member in which a residual potential hardly increases at the time of image formation, a pattern memory hardly occurs, and the crack of a conductive layer hardly occurs, and a process cartridge and an electrophotographic apparatus each including the electrophotographic photosensitive member.
According to one aspect of the present invention, there is provided an electrophotographic photosensitive member, including: a support; a conductive layer formed on the support; and a photosensitive layer formed on the conductive layer, in which: the conductive layer contains a titanium oxide particle coated with tin oxide doped with phosphorus, a tin oxide particle doped with phosphorus, and a binding material; and when a total volume of the conductive layer is represented by VT, a total volume of the titanium oxide particle coated with tin oxide doped with phosphorus in the conductive layer is represented by V1P, and a total volume of the tin oxide particle doped with phosphorus in the conductive layer is represented by V2P, the VT, the V1P, and the V2P satisfy the following expressions (1) and (2).
2≦{(V2P/VT)/(V1P/VT)}×100≦25 (1)
15≦{(V1P/VT)+(V2P/VT)}×100≦45 (2)
According to another aspect of the present invention, there is provided an electrophotographic photosensitive member, including: a support; a conductive layer formed on the support; and a photosensitive layer formed on the conductive layer, in which: the conductive layer contains a titanium oxide particle coated with tin oxide doped with tungsten, a tin oxide particle doped with tungsten, and a binding material; and when a total volume of the conductive layer is represented by VT, a total volume of the titanium oxide particle coated with tin oxide doped with tungsten in the conductive layer is represented by V1W, and a total volume of the tin oxide particle doped with tungsten in the conductive layer is represented by V2W, the VT, the V1W, and the V2W satisfy the following expressions (6) and (7).
2≦{(V2W/VT)/(V1W/VT)}×100×25 (6)
15×{(V1W/VT)+(V2W/VT)}×100≦45 (7)
According to still another aspect of the present invention, there is provided an electrophotographic photosensitive member, including: a support; a conductive layer formed on the support; and a photosensitive layer formed on the conductive layer, in which: the conductive layer contains a titanium oxide particle coated with tin oxide doped with fluorine, a tin oxide particle doped with fluorine, and a binding material; and when a total volume of the conductive layer is represented by VT, a total volume of the titanium oxide particle coated with tin oxide doped with fluorine in the conductive layer is represented by V1F, and a total volume of the tin oxide particle doped with fluorine in the conductive layer is represented by V2F, the VT, the V1F, and the V2F satisfy the following expressions (11) and (12).
2≦{(V2F/VT)/(V1F/VT)}×100×25 (11)
15≦{(V1F/VT)+(V2F/VT)}×100≦45 (12)
According to still another aspect of the present invention, there is provided an electrophotographic photosensitive member, including: a support; a conductive layer formed on the support; and a photosensitive layer formed on the conductive layer, in which: the conductive layer contains a titanium oxide particle coated with tin oxide doped with niobium, a tin oxide particle doped with niobium, and a binding material; and when a total volume of the conductive layer is represented by VT, a total volume of the titanium oxide particle coated with tin oxide doped with niobium in the conductive layer is represented by V1Nb, and a total volume of the tin oxide particle doped with niobium in the conductive layer is represented by V2Nb, the VT, the V1Nb, and the V2Nb satisfy the following expressions (16) and (17).
2≦{(V2Nb/VT)/V1Nb/VT)}×100≦25 (16)
15≦{(V1Nb/VT)+(V2Nb/VT)}×100≦45 (17)
According to still another aspect of the present invention, there is provided an electrophotographic photosensitive member, including: a support; a conductive layer formed on the support; and a photosensitive layer formed on the conductive layer, in which: the conductive layer contains a titanium oxide particle coated with tin oxide doped with tantalum, a tin oxide particle doped with tantalum, and a binding material; and when a total volume of the conductive layer is represented by VT, a total volume of the titanium oxide particle coated with tin oxide doped with tantalum in the conductive layer is represented by V1Ta, and a total volume of the tin oxide particle doped with tantalum in the conductive layer is represented by V2Ta, the VT, the V1Ta, and the V2Ta satisfy the following expressions (21) and (22).
2≦{(V2Ta/VT)/(V1Ta/VT)}×100≦25 (21)
15≦{(V1Ta/VT)+(V2Ta/VT)}×100≦45 (22)
According to still another aspect of the present invention, there is provided a process cartridge detachably mountable to a main body of an electrophotographic apparatus, in which the process cartridge integrally supports: the above-described electrophotographic photosensitive member; and at least one device selected from the group consisting of a charging device, a developing device, a transferring device, and a cleaning device.
According to still another aspect of the present invention, there is provided an electrophotographic apparatus, including: the above-described electrophotographic photosensitive member; a charging device; an exposing device; a developing device; and a transferring device.
According to the present invention, there is provided the electrophotographic photosensitive member in which a residual potential hardly increases at the time of image formation, a pattern memory hardly occurs, and the crack of a conductive layer hardly occurs, and the process cartridge and the electrophotographic apparatus each including the electrophotographic photosensitive member.
Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings.
An electrophotographic photosensitive member of the present invention is an electrophotographic photosensitive member including a support, a conductive layer formed on the support, and a photosensitive layer formed on the conductive layer.
The photosensitive layer may be a single-layer type photosensitive layer obtained by incorporating a charge-generating substance and a charge-transporting substance into a single layer, or may be a laminated type photosensitive layer obtained by laminating a charge-generating layer containing a charge-generating substance and a charge-transporting layer containing a charge-transporting substance. In addition, an undercoat layer may be provided between the conductive layer and photosensitive layer to be formed on the support as required.
A support having electro-conductivity (conductive support) is preferred as the support, and for example, a metal support formed of a metal such as aluminum, an aluminum alloy, or stainless steel can be used. When aluminum or an aluminum alloy is used, an aluminum tube produced by a production method including an extrusion process and a drawing process, or an aluminum tube produced by a production method including an extrusion process and an ironing process can be used. Such aluminum tube provides good dimensional accuracy and good surface smoothness without the cutting of its surface, and is advantageous in terms of cost. However, burr-like protruding defects are liable to occur on the uncut surface of the aluminum tube. Accordingly, it is particularly effective to provide the conductive layer.
In the electrophotographic photosensitive member of the present invention, any one of the following combinations of metal oxide particles as well as a binding material is used in the conductive layer to be formed on the support:
One of the features lies in that in each of the combinations (p), (w), (f), (nb), and (ta) of metal oxide particles, phosphorus (P), tungsten (W), fluorine (F), niobium (Nb), or tantalum (Ta) is common to the element with which tin oxide is doped. It should be noted that the titanium oxide particles are particles of titanium oxide (TiO2) and the tin oxide particles are particles of tin oxide (SnO2).
Hereinafter, the titanium oxide particle coated with tin oxide doped with phosphorus is also represented as “P-doped tin oxide-coated titanium oxide particles” and the tin oxide particle doped with phosphorus is also represented as “P-doped tin oxide particles.” In addition, the titanium oxide particle coated with tin oxide doped with tungsten is also represented as “W-doped tin oxide-coated titanium oxide particles” and the tin oxide particle doped with tungsten is also represented as “W-doped tin oxide particles.” In addition, the titanium oxide particle coated with tin oxide doped with fluorine is also represented as “F-doped tin oxide-coated titanium oxide particles” and the tin oxide particle doped with fluorine is also represented as “F-doped tin oxide particles.” In addition, the titanium oxide particle coated with tin oxide doped with niobium is also represented as “Nb-doped tin oxide-coated titanium oxide particles” and the tin oxide particle doped with niobium is also represented as “Nb-doped tin oxide particles.” In addition, the titanium oxide particle coated with tin oxide doped with tantalum is also represented as “Ta-doped tin oxide-coated titanium oxide particles” and the tin oxide particle doped with tantalum is also represented as “Ta-doped tin oxide particles.”
Further, in the electrophotographic photosensitive member of the present invention, in the case where the combination of metal oxide particles to be incorporated into the conductive layer is the combination (p), when the total volume of the conductive layer is represented by VT, the volume of the P-doped tin oxide-coated titanium oxide particles in the conductive layer is represented by V1P, and the volume of the P-doped tin oxide particles in the conductive layer is represented by V2P, VT, V1P, and V2P satisfy the following expressions (1) and (2).
2≦{(V2P/VT)/(V1P/VT)}×100≦25 (1)
15×{(V1P/VT)+(V2P/VT)}×100≦45 (2)
Further, in the case where the combination of metal oxide particles to be incorporated into the conductive layer is the combination (w), when the total volume of the conductive layer is represented by VT, the volume of the W-doped tin oxide-coated titanium oxide particles in the conductive layer is represented by V1W, and the volume of the W-doped tin oxide particles in the conductive layer is represented by V2W, VT, V1W, and V2W satisfy the following expressions (6) and (7).
2×{(V2W/VT)/(V1W/VT)}×100≦25 (6)
15≦{(V1W/VT)+(V2W/VT)}×100≦45 (7)
Further, in the case where the combination of metal oxide particles to be incorporated into the conductive layer is the combination (f), when the total volume of the conductive layer is represented by VT, the volume of the F-doped tin oxide-coated titanium oxide particles in the conductive layer is represented by V1F, and the volume of the F-doped tin oxide particles in the conductive layer is represented by V2F, VT, V1F, and V2F satisfy the following expressions (11) and (12).
2≦{(V2F/VT)/(V1F/VT)}×100≦25 (11)
15≦{(V1F/VT)+(V2F/VT)}×100≦45 (12)
Further, in the case where the combination of metal oxide particles to be incorporated into the conductive layer is the combination (nb), when the total volume of the conductive layer is represented by VT, the volume of the Nb-doped tin oxide-coated titanium oxide particles in the conductive layer is represented by V1Nb, and the volume of the Nb-doped tin oxide particles in the conductive layer is represented by V2Nb, VT, V1Nb, and V2Nb satisfy the following expressions (16) and (17).
2≦{(V2Nb/VT)/(V1Nb/VT)}×100≦25 (16)
15≦{(V1Nb/VT)+(V2Nb/VT)}×100≦45 (17)
Further, in the case where the combination of metal oxide particles to be incorporated into the conductive layer is the combination (ta), when the total volume of the conductive layer is represented by VT, the volume of the Ta-doped tin oxide-coated titanium oxide particles in the conductive layer is represented by V1Ta, and the volume of the Ta-doped tin oxide particles in the conductive layer is represented by V2Ta, VT, V1Ta, and V2Ta satisfy the following expressions (21) and (22).
2≦{(V2Ta/VT)/(V1Ta/VT)}×100×25 (21)
15≦{(V1Ta/VT)+(V2Ta/VT)}×100≦45 (22)
Hereinafter, V1P, V1W, V1F, V1Nb, and V1Ta are also collectively represented as “V1,” and V2P, V2W, V2F, V2Nb, and V2Ta are also collectively represented as “V2.” In addition, the P-doped tin oxide-coated titanium oxide particles, the W-doped tin oxide-coated titanium oxide particles, the F-doped tin oxide-coated titanium oxide particles, the Nb-doped tin oxide-coated titanium oxide particles, and the Ta-doped tin oxide-coated titanium oxide particles are also collectively represented as “a first metal oxide particle,” and the P-doped tin oxide particles, the W-doped tin oxide particles, the F-doped tin oxide particles, the Nb-doped tin oxide particles, and the Ta-doped tin oxide particles are also collectively represented as “a second metal oxide particle.”
The inventors of the present invention have made extensive studies to suppress the occurrence of a pattern memory. As a result, the inventors have found that the pattern memory is suppressed by the formation of a good electro-conductive path over a wide range in the conductive layer, in other words, uniform movement of charge in the conductive layer. This is probably because local retention or storage of the charge in the conductive layer hardly occurs. However, the retention or storage of the charge may not largely correlate with the volume resistivity or electric resistance of the conductive layer because the retention or storage is a local phenomenon. The formation of a good electro-conductive path in the conductive layer for suppressing the pattern memory requires the formation of an electro-conductive path that passes both the first metal oxide particle and the second metal oxide particle. To this end, the following necessity may arise for suppressing the occurrence of the pattern memory: instead of the formation of the conductive layer containing only the first metal oxide particle or the conductive layer containing only the second metal oxide particle, the first metal oxide particle and the second metal oxide particle are caused to exist in the conductive layer at a certain ratio, and then an electro-conductive path that passes both the first metal oxide particle and the second metal oxide particle is formed. That is, it may be necessary to satisfy the expression (1), (6), (11), (16), or (21). When the value for {(V2/VT)/(V1/VT)}×100 is less than 2, the ratio of the amount of the second metal oxide particle to the amount of the first metal oxide particle becomes insufficient. Accordingly, it is assumed that the situation becomes close to that in the case of the conductive layer containing only the first metal oxide particle and hence an electro-conductive path good for suppressing the occurrence of the pattern memory cannot be formed. On the other hand, when the value for {(V2/VT)/(V1/VT)}×100 is more than 25, the ratio of the amount of the second metal oxide particle to the amount of the first metal oxide particle becomes excessive. Accordingly, it is assumed that the situation becomes close to that in the case of the conductive layer containing only the second metal oxide particle and hence an electro-conductive path good for suppressing the occurrence of the pattern memory cannot be formed. When the following expression (3), (8), (13), (18), or (23) is satisfied, a suppressing effect on the occurrence of the pattern memory becomes additionally significant because the ratio between the first metal oxide particle and the second metal oxide particle becomes the ratio at which an electro-conductive path additionally good for suppressing the occurrence of the pattern memory can be formed.
5≦{(V2P/VT)/(V1P/VT)}×100≦20 (3)
5≦{(V2W/VT)/(V1W/VT)}×100≦20 (8)
5≦{(V2F/VT)/(V1F/VT)}×100≦20 (13)
5≦{(V2Nb/VT)/(V1Nb/VT)}×100≦20 (18)
5≦{(V2Ta/VT)/(V1Ta/VT)}×100≦20 (23)
In addition, the formation of the electro-conductive path that passes the first metal oxide particle and the second metal oxide particle in the conductive layer may require that the sum of the contents of the first metal oxide particle and a second metal oxide particle in the conductive layer fall within a certain range. That is, it may be necessary to satisfy the expression (2), (7), (12), (17), or (22). When the value for {(V1+V2)/VT}×100 is less than 15, the retention or storage of the charge in the conductive layer is liable to occur and hence an increase in residual potential is liable to be large in the case of repeated use of the electrophotographic photosensitive member. The value for {(V1+V2)/VT}×100 is more preferably 20 or more. On the other hand, when the value for {(V1+V2)/VT}×100 is more than 45, the amount of the binding material becomes relatively small and hence a crack is liable to occur in the conductive layer. The value for {(V1+V2)/VT}×100 is more preferably 40 or less. That is, the following expression (4), (9), (14), (19), or (24) is more preferably satisfied.
20≦{(V1P/VT)+(V2P/VT)}×100≦40 (4)
20≦{(V1W/VT)+(V2W/VT)}×100≦40 (9)
20≦{(V1F/VT)+(V2F/VT)}×100≦40 (14)
20≦{(V1Nb/VT)+(V2Nb/VT)}×100≦40 (19)
20≦{(V1Ta/VT)+(V2Ta/VT)}×100≦40 (24)
As described above, it is necessary to satisfy the expressions (1) and (2) simultaneously, to satisfy the expressions (6) and (7) simultaneously, to satisfy the expressions (11) and (12) simultaneously, to satisfy the expressions (16) and (17) simultaneously, or to satisfy the expressions (21) and (22) simultaneously for obtaining an electrophotographic photosensitive member in which a residual potential hardly increases at the time of image formation, a pattern memory hardly occurs, and the crack of a conductive layer hardly occurs.
With regard to the present invention, in the case where the combination of the metal oxide particles to be incorporated into the conductive layer is, for example, a combination of a titanium oxide particle coated with tin oxide doped with antimony and a tin oxide particle doped with antimony, or a combination of titanium oxide particles coated with oxygen-deficient tin oxide and oxygen-deficient tin oxide particles, the suppressing effect on the occurrence of the pattern memory deteriorates as compared with that in the case where the combination of the metal oxide particles to be incorporated into the conductive layer is the combination (p), (w), (f), (nb), or (ta).
In addition, even when a species (dopant) to be doped into tin oxide is phosphorus, tungsten, fluorine, niobium, or tantalum, in the case where a species to be doped into tin oxide of the first metal oxide particle and a species to be doped into tin oxide of the second metal oxide particle differ from each other such as the case where the combination of the metal oxide particles to be incorporated into the conductive layer is a combination of a titanium oxide particle coated with tin oxide doped with phosphorus and a tin oxide particle doped with tungsten, the suppressing effect on the occurrence of the pattern memory similarly deteriorates as compared with that in the case of the combination (p), (w), (f), (nb), or (ta) in which the species to be doped are identical to each other. This is probably because of the following reason: when the species to be doped into tin oxide of the first metal oxide particle and the species to be doped into tin oxide of the second metal oxide particle are identical to each other, the electrical properties, surface properties, and work functions of the first metal oxide particle and a second metal oxide particle become physical properties closest to each other in a comprehensive manner, and hence it becomes easy for the charge to move uniformly in the conductive layer.
In addition, in the case where the combination of the metal oxide particles to be incorporated into the conductive layer is the combination (p), when the abundance ratio of phosphorus to tin oxide in the P-doped tin oxide-coated titanium oxide particles is represented by R1P [atom %] and the abundance ratio of phosphorus to tin oxide in the P-doped tin oxide particles is represented by R2P [atom %], the following expression (5) is preferably satisfied.
0.9≦R2P/R1P≦1.1 (5)
In addition, in the case where the combination of the metal oxide particles to be incorporated into the conductive layer is the combination (w), when the abundance ratio of tungsten to tin oxide in the W-doped tin oxide-coated titanium oxide particles is represented by R1W [atom %] and the abundance ratio of tungsten to tin oxide in the W-doped tin oxide particles is represented by R2W [atom %], the following expression (10) is preferably satisfied.
0.9≦R2W/R1W≦1.1 (10)
In addition, in the case where the combination of the metal oxide particles to be incorporated into the conductive layer is the combination (f), when the abundance ratio of fluorine to tin oxide in the F-doped tin oxide-coated titanium oxide particles is represented by R1F [atom %] and the abundance ratio of fluorine to tin oxide in the F-doped tin oxide particles is represented by R2F [atom %], the following expression (15) is preferably satisfied.
0.9≦R2F/R1F≦1.1 (15)
In addition, in the case where the combination of the metal oxide particles to be incorporated into the conductive layer is the combination (nb), when the abundance ratio of niobium to tin oxide in the Nb-doped tin oxide-coated titanium oxide particles is represented by R1Nb [atom %] and the abundance ratio of niobium to tin oxide in the Nb-doped tin oxide particles is represented by R2Nb [atom %], the following expression (20) is preferably satisfied.
0.9≦R2Nb/R1Nb≦1.1 (20)
In addition, in the case where the combination of the metal oxide particles to be incorporated into the conductive layer is the combination (ta), when the abundance ratio of tantalum to tin oxide in the Ta-doped tin oxide-coated titanium oxide particles is represented by R1Ta [atom %] and the abundance ratio of tantalum to tin oxide in the Ta-doped tin oxide particles is represented by R2Ta [atom %], the following expression (25) is preferably satisfied.
0.9≦R2Ta/R1Ta≦1.1 (25)
Hereinafter, R1P, R1W, R1F, R1Nb, and R1Ta are also collectively represented as “R1,” and R2P, R2W, R2F, R2Nb, and R2Ta are also collectively represented as “R2.”
As represented by the expression (5), (10), (15), (20), or (25), the abundance ratios of phosphorus, tungsten, fluorine, niobium, or tantalum in tin oxide of the first metal oxide particle and tin oxide of the second metal oxide particle are preferably as close as possible to each other. In other words, the ratio R2/R1 is preferably as close as possible to 1.0, and specifically, the ratio is preferably 0.9 or more and 1.1 or less. When the ratio R2/R1 is 0.9 or more and 1.1 or less, an electro-conductive path additionally good for suppressing the occurrence of the pattern memory is formed and hence the suppressing effect on the occurrence of the pattern memory becomes additionally significant.
The measurement of R1 and R2 can be performed by STEM-EDX after taking out the conductive layer of the electrophotographic photosensitive member according to an FIB method. In addition, the measurement of V1 and V2 can be performed by the slice and view of an FIB-SEM after taking out the conductive layer of the electrophotographic photosensitive member according to the FIB method.
First, the measurement of R1 and R2 is described.
Sampling for the STEM-EDX analysis was performed as described below.
The sampling is performed with a supporting base made of copper (Cu) by an FIB-μ sampling method. An apparatus used by the inventors of the present invention is an FB-2000A μ-Sampling System (trade name) manufactured by Hitachi High-Technologies Corporation. The sampling was performed so that the horizontal and longitudinal sizes of a sample became such sizes that a measurement range could be secured, and the thickness of the sample became 150 nm.
The STEM-EDX analysis was performed as described below.
The inventors of the present invention have performed the analysis with a field emission electron microscope (HRTEM) (trade name: JEM2100F) manufactured by JEOL Ltd. and a JED-2300T (trade name) (having a resolution of 133 eV or less) (energy dispersive X-ray spectroscopy) manufactured by JEOL Ltd. as an EDX portion.
Analysis conditions were set as described below.
The measurement range measured 3.6 μm long by 3.4 μm wide by 150 nm thick.
The abundance ratio of phosphorus to tin oxide in the P-doped tin oxide particles, the abundance ratio of phosphorus to tin oxide in the P-doped tin oxide-coated titanium oxide particles, the abundance ratio of tungsten to tin oxide in the W-doped tin oxide particles, the abundance ratio of tungsten to tin oxide in the W-doped tin oxide-coated titanium oxide particles, the abundance ratio of fluorine to tin oxide in the F-doped tin oxide particles, the abundance ratio of fluorine to tin oxide in the F-doped tin oxide-coated titanium oxide particles, the abundance ratio of niobium to tin oxide in the Nb-doped tin oxide particles, the abundance ratio of niobium to tin oxide in the Nb-doped tin oxide-coated titanium oxide particles, the abundance ratio of tantalum to tin oxide in the Ta-doped tin oxide particles, or the abundance ratio of tantalum to tin oxide in the Ta-doped tin oxide-coated titanium oxide particles can be determined from an atomic ratio because the identification of an element can be performed by the STEM-EDX.
The sampling was similarly performed ten times to provide ten samples, followed by the measurement. The average of a total of ten R1's and the average of a total of ten R2's were each defined as a value for R1 or R2 in the conductive layer of the electrophotographic photosensitive member as a measuring object.
Next, the measurement of the ratios (V1/VT) and (V2/VT) is described.
The volume of the P-doped tin oxide-coated titanium oxide particles and the volume of the P-doped tin oxide particles, and their ratios in the conductive layer can be determined by identifying tin oxide doped with phosphorus and titanium oxide based on their difference in contrast of the slice and view of the FIB-SEM. When the species to be doped into tin oxide is an element except phosphorus such as tungsten, fluorine, niobium, or tantalum, the volumes and the ratios in the conductive layer can be similarly determined.
Conditions for the slice and view in the present invention were set as described below.
The analysis is performed in a region measuring 2 μm wide by 2 μm long, information on each cross-section is integrated, and the volumes V1 and V2 per space measuring 2 μm wide by 2 μm long by 2 μm thick (VT=8 μm3) are determined. In addition, the measurement is performed under an environment having a temperature of 23° C. and a pressure of 1×10−4 Pa. It should be noted that a Strata 400S (sample tilt: 52°) manufactured by FEI Company can also be used as a processing and observation apparatus.
The sampling was similarly performed ten times to provide ten samples, followed by the measurement. A value obtained by dividing the average of a total of ten volumes V1 per 8 μm3 by VT (8 μm3) was defined as the ratio (V1/VT) in the conductive layer of the electrophotographic photosensitive member as a measuring object. In addition, a value obtained by dividing the average of a total of ten volumes V2 per 8 μm3 by VT (8 μm3) was defined as a value for the ratio (V2/VT) in the conductive layer of the electrophotographic photosensitive member as a measuring object.
It should be noted that the areas of identified tin oxide doped with phosphorus and titanium oxide were obtained from the information on each cross-section through image analysis. The image analysis was performed with the following image processing software.
Image processing software: Image-Pro Plus manufactured by Media Cybernetics
Of the metal oxide particles to be used in the present invention, the first metal oxide particle has a coating layer constituted of tin oxide doped with phosphorus, tungsten, fluorine, niobium, or tantalum, and a core particle constituted of titanium oxide. In addition, the first metal oxide particle is such a structure that the core particle is coated with the coating layer.
The ratio (coating ratio) of tin oxide (SnO2) in the first metal oxide particle to be used in the present invention is preferably 10 to 60% by mass. A tin raw material needed for producing tin oxide (SnO2) needs to be blended at the time of the production of the first metal oxide particle for controlling the coating ratio of tin oxide (SnO2). For example, when tin chloride (SnCl4) as a tin raw material is used, the blending needs to be performed in consideration of the amount of tin oxide (SnO2) to be produced from tin chloride (SnCl4). Although tin oxide (SnO2) constituting the coating layer of each of the first metal oxide particle to be used in the present invention is doped with phosphorus (P), tungsten (W), fluorine (F), niobium (Nb), or tantalum (Ta), the coating ratio is a value calculated from the mass of tin oxide (SnO2) with respect to the total mass of tin oxide (SnO2) and titanium oxide (TiO2) without any consideration of the mass of phosphorus (P), tungsten (W), fluorine (F), niobium (Nb), or tantalum (Ta) with which tin oxide (SnO2) is doped.
In addition, it is preferred that tin oxide (SnO2) in the first metal oxide particle or a second metal oxide particle be doped with phosphorus (P), tungsten (W), fluorine (F), niobium (Nb), or tantalum (Ta) in an amount (doping ratio) of 0.1 to 10 mass % with respect to tin oxide (SnO2) (in terms of mass of the tin oxide containing no phosphorus (P), tungsten (W), fluorine (F), niobium (Nb), and tantalum (Ta)).
It should be noted that a method of producing the first metal oxide particle (P-doped tin oxide-coated titanium oxide particles, W-doped tin oxide-coated titanium oxide particles, F-doped tin oxide-coated titanium oxide particles, Nb-doped tin oxide-coated titanium oxide particles, or Ta-doped tin oxide-coated titanium oxide particles) is also disclosed in Japanese Patent Application Laid-Open No. H06-207118 and Japanese Patent Application Laid-Open No. 2004-349167.
In addition, a method of producing the second metal oxide particle (P-doped tin oxide particles, W-doped tin oxide particles, F-doped tin oxide particles, Nb-doped tin oxide particles, or Ta-doped tin oxide particles) is also disclosed in Japanese Patent No. 3365821, Japanese Patent Application Laid-Open No. H02-197014, Japanese Patent Application Laid-Open No. H09-278445, and Japanese Patent Application Laid-Open No. H10-53417.
A particulate shape, a spherical shape, a needle shape, a fibrous shape, a columnar shape, a rod shape, a spindle shape, a plate shape, and other analogous shapes can each be used as the shape of a titanium oxide (TiO2) particle as the core particle in each of the first metal oxide particle to be used in the present invention. Of those, a spherical shape is preferred from such a viewpoint that an image defect such as a black spot hardly occurs.
In addition, any one of the crystal forms such as rutile, anatase, brookite, and amorphous forms can be used as the crystal form of the titanium oxide (TiO2) particle as the core particle in each of the first metal oxide particle to be used in the present invention. In addition, any one of the production methods such as a sulfuric acid method and a hydrochloric acid method can be adopted as the production method.
In the present invention, a first reason why the first metal oxide particle having the core particles (titanium oxide (TiO2) particles) are used is as described below. Tin oxide (SnO2) constituting the coating layer of each of the first metal oxide particle has higher electro-conductivity than that of titanium oxide (TiO2) constituting each core particle and charge received by the second metal oxide particle containing tin oxide (SnO2) propagates mainly through the coating layer containing tin oxide (SnO2) in each of the first metal oxide particle, i.e., the transfer of the charge between tin oxide (SnO2) is mainly performed, and hence the transfer of the charge between the first metal oxide particle and the second metal oxide particle becomes smooth, and the charge uniformly moves in the conductive layer.
A second reason why the first metal oxide particle having the core particles (titanium oxide (TiO2) particles) are used is that an improvement in dispersibility of the second metal oxide particle in a conductive-layer coating solution is achieved. When the second metal oxide particle is used without the use of the first metal oxide particle, the aggregation of the second metal oxide particle is liable to occur in the conductive-layer coating solution to enlarge their average particle diameter, and hence protrusive seeding defects occur in the surface of the conductive layer to be formed or the stability of the conductive-layer coating solution reduces in some cases. In addition, the suppressing effect on the pattern memory is not sufficiently obtained.
A third reason why the first metal oxide particle having the core particles (titanium oxide (TiO2) particles) are used is that the titanium oxide (TiO2) particles as the core particles of the first metal oxide particle each have low transparency as a particle and hence easily cover defects in the surface of the support. In contrast, for example, when barium sulfate particles are used as the core particles, the particles each have high transparency as a particle and hence a material for covering the defects in the surface of the support may be separately needed.
The particle diameter of each of the titanium oxide (TiO2) particles as the core particles of the first metal oxide particle to be used in the present invention is preferably 0.05 μm or more and 0.40 μm or less from the viewpoint of adjusting the average particle diameter of the first metal oxide particle to a preferred range to be described later.
The powder resistivity of the first metal oxide particle to be used in the present invention is preferably 1.0×101 Ω·cm or more and 1.0×106 Ω·cm or less, more preferably 1.0×102 Ω·cm or more and 1.0×105 Ω·cm or less.
The powder resistivity of the second metal oxide particle to be used in the present invention is preferably 1.0×100 Ω·cm or more and 1.0×105 Ω·cm or less, more preferably 1.0×101 Ω·cm or more and 1.0×104 Ω·cm or less.
The powder resistivity of the first metal oxide particle to be used in the present invention is preferably lower than the powder resistivity of the titanium oxide (TiO2) particles as the core particles of the first metal oxide particle.
A method of measuring the powder resistivity of metal oxide particles such as the first metal oxide particle or a second metal oxide particle to be used in the present invention is as described below.
The powder resistivity of metal oxide particles such as the first metal oxide particle or a second metal oxide particle to be used in the present invention, or of the core particles of composite particles like the first metal oxide particle to be used in the present invention is measured under a normal-temperature and normal-humidity (23° C./50% RH) environment. In the present invention, a resistivity meter manufactured by Mitsubishi Chemical Corporation (trade name: Loresta GP (Hiresta UP when the powder resistivity exceeded 1.0×107 Ω·cm)) was used as a measuring apparatus. The metal oxide particles as measuring objects are compressed into a pellet-shaped sample for measurement at a pressure of 500 kg/cm2. A voltage of 100 V is applied. The core particles are subjected to the measurement before the formation of the coating layer.
The conductive layer can be formed by applying the conductive-layer coating solution containing a solvent, the binding material, and the first metal oxide particle and the second metal oxide particle onto the support, and drying and/or curing the resultant coating film.
The conductive-layer coating solution can be prepared by dispersing the first metal oxide particle and the second metal oxide particle together with the binding material into the solvent. As a dispersion method, there are given, for example, methods using a paint shaker, a sand mill, a ball mill, and a liquid collision type high-speed disperser.
Examples of the binding material to be used in the conductive layer include resins such as a phenol resin, polyurethane, polyamide, polyimide, polyamide-imide, polyvinyl acetal, an epoxy resin, an acrylic resin, a melamine resin, and polyester. The resins may be used alone or in combination of two or more kinds thereof. Further, of those resins, from the viewpoints of, for example, suppression of migration (dissolution) into another layer, adhesiveness with the support, dispersibility and dispersion stability of the particles of the present invention, and solvent resistance after layer formation, a curable resin is preferred, and a thermosetting resin is more preferred. Further, of the thermosetting resins, a thermosetting phenol resin and thermosetting polyurethane are preferred. In the case of using the curable resin as the binding material in the conductive layer, the binding material to be contained in the conductive-layer coating solution is a monomer and/or an oligomer of the curable resin.
Examples of the solvent to be used in the conductive-layer coating solution include alcohols such as methanol, ethanol, and isopropanol, ketones such as acetone, methyl ethyl ketone, and cyclohexanone, ethers such as tetrahydrofuran, dioxane, ethylene glycol monomethyl ether, and propylene glycol monomethyl ether, esters such as methyl acetate and ethyl acetate, and aromatic hydrocarbons such as toluene and xylene.
In addition, a surface roughness providing material for roughening the surface of the conductive layer may be incorporated into the conductive-layer coating solution in order to suppress the occurrence of interference fringes on an output image due to the interference of light reflected at the surface of the conductive layer. Resin particles having an average particle diameter of 1 μm or more and 5 μm or less are preferred as the surface roughness providing material. Examples of the resin particles include particles of curable resins such as a curable rubber, a polyurethane, an epoxy resin, an alkyd resin, a phenol resin, a polyester, a silicone resin, and an acryl-melamine resin. Of those, particles of a silicone resin that hardly aggregate are preferred. The density (0.5 to 2 g/cm3) of the resin particles is small as compared with the densities (4 to 8 g/cm3) of the first metal oxide particle and a second metal oxide particle to be used in the present invention, and hence the surface of the conductive layer can be efficiently roughened at the time of the formation of the conductive layer. In this regard, however, when the content of the surface roughness providing material in the conductive layer increases, the volume resistivity of the conductive layer tends to increase in some cases. Accordingly, the content of the surface roughness providing material in the conductive-layer coating solution is preferably 1 to 80% by mass with respect to the binding material in the conductive-layer coating solution for adjusting the volume resistivity of the conductive layer to 2.0×1013 Ω·cm or less. In the present invention, the densities [g/cm3] of the first metal oxide particle, the second metal oxide particle, the binding material (provided that when the binding material was liquid, a cured product thereof was subjected to the measurement), the silicone particles, and the like were determined with a dry auto-densimeter as described below. A helium gas purge was performed ten times as a pretreatment for particles as measuring objects at a temperature of 23° C. and a maximum pressure of 19.5 psig with a dry auto-densimeter manufactured by Shimadzu Corporation (trade name: Accupyc 1330) and a container having a capacity of 10 cm3. After that, a fluctuation in pressure in a sample chamber of 0.0050 psig/min was used as a pressure equilibrium judgment value as to whether a pressure in the container reached equilibrium. When the fluctuation was equal to or less than the value, the pressure was defined as being in an equilibrium state and then the measurement was initiated to measure any such density [g/cm3] automatically.
In addition, a leveling agent for improving the surface property of the conductive layer may be incorporated into the conductive-layer coating solution. In addition, pigment particles may be incorporated into the conductive-layer coating solution for additionally improving the coverage of the conductive layer.
In addition, the average particle diameter of the first metal oxide particle (P-doped tin oxide-coated titanium oxide particles, W-doped tin oxide-coated titanium oxide particles, F-doped tin oxide-coated titanium oxide particles, Nb-doped tin oxide-coated titanium oxide particles, or Ta-doped tin oxide-coated titanium oxide particles) in the conductive-layer coating solution is preferably 0.10 μm or more and 0.45 μm or less, more preferably 0.15 μm or more and 0.40 μm or less. When the average particle diameter is less than 0.10 μm, the reaggregation of the first metal oxide particle is liable to occur after the preparation of the conductive-layer coating solution and hence the stability of the conductive-layer coating solution may reduce. When the average particle diameter is more than 0.45 μm, the surface of the conductive layer roughens to promote the occurrence of local injection of charge into the photosensitive layer, and hence a black spot on the white background of an output image may become conspicuous.
In addition, the average particle diameter of the second metal oxide particle (P-doped tin oxide particles, W-doped tin oxide particles, F-doped tin oxide particles, Nb-doped tin oxide particles, or Ta-doped tin oxide particles) in the conductive-layer coating solution is preferably 0.01 μm or more and 0.45 μm or less, more preferably 0.01 μm or more and 0.10 μm or less.
The average particle diameters of metal oxide particles such as the first metal oxide particle and a second metal oxide particle in the conductive-layer coating solution can be determined by the following liquid phase sedimentation method or cross-sectional observation with an SEM.
First, the conductive-layer coating solution is diluted with the solvent used for its preparation so that its transmittance may fall within the range of 0.8 to 1.0. Next, a histogram of the average particle diameter (volume average particle diameter) and particle size distribution of the metal oxide particles is created with an ultracentrifugal automatic particle size distribution analyzer. In the present invention, the measurement was performed with an ultracentrifugal automatic particle size distribution analyzer (trade name: CAPA 700) manufactured by HORIBA, Ltd. as the ultracentrifugal automatic particle size distribution analyzer under the condition of a number of rotation of 3,000 rpm.
From the viewpoint of covering defects in the surface of the support, the thickness of the conductive layer is preferably 10 μm or more and 40 μm or less, more preferably 15 μm or more and 35 μm or less.
It should be noted that, in the present invention, as an apparatus for measuring the thickness of each layer of the electrophotographic photosensitive member including the conductive layer, FISHERSCOPE mms manufactured by Fisher Instruments K.K. was used.
The volume resistivity of the conductive layer is preferably 1.0×108 Ω·cm or more and 2.0×1013 Ω·cm or less. When a layer having a volume resistivity of 2.0×1013 Ω·cm or less is provided on the support as a layer for covering the defects in the surface of the support, the flow of charge is hardly disrupted at the time of image formation and hence a residual potential hardly increases. Meanwhile, when the volume resistivity of the conductive layer is 1.0×108 Ω·cm or more, the quantity of the charge flowing in the conductive layer at the time of the charging of the electrophotographic photosensitive member does not become excessively large and hence fogging due to an increase in dark attenuation of the electrophotographic photosensitive member hardly occurs.
A method of measuring the volume resistivity of the conductive layer of the electrophotographic photosensitive member is described with reference to
The volume resistivity of the conductive layer is measured under a normal-temperature and normal-humidity (23° C./50% RH) environment. A copper tape 203 (manufactured by Sumitomo 3M Limited, Type No. 1181) is attached to the surface of a conductive layer 202 and is used as an electrode on the front surface side of the conductive layer 202. In addition, a support 201 is used as an electrode on the back side of the conductive layer 202. A power source 206 for applying a voltage between the copper tape 203 and the support 201, and a current measurement appliance 207 for measuring a current flowing between the copper tape 203 and the support 201 are placed. In addition, a copper wire 204 is mounted on the copper tape 203 for applying a voltage to the copper tape 203 and then the copper wire 204 is fixed to the copper tape 203 by attaching a copper tape 205 similar to the copper tape 203 from above the copper wire 204 so that the copper wire 204 may not protrude from the copper tape 203. A voltage is applied to the copper tape 203 with the copper wire 204.
When a background current value in the case where no voltage is applied between the copper tape 203 and the support 201 is represented by I0 [A], a current value in the case where a voltage of −1 V formed only of a DC voltage (DC component) is applied is represented by I [A], the thickness of the conductive layer 202 is represented by d [cm], and the area of the electrode (copper tape 203) on the front surface side of the conductive layer 202 is represented by S [cm2], a value represented by the following expression (26) is defined as a volume resistivity p [Ω·cm] of the conductive layer 202.
ρ=1/(I−I0)×S/d [Ω·cm] (26)
This measurement is preferably performed with an appliance capable of measuring a minute current as the current measurement appliance 207 because a minute current quantity whose absolute value is 1×10−6 A or less is measured in the measurement. Examples of such appliance include a pA meter (trade name: 4140B) manufactured by Yokogawa Hewlett-Packard and a high resistance meter (trade name: 4339B) manufactured by Agilent Technologies.
It should be noted that the volume resistivity of the conductive layer measured in a state where only the conductive layer is formed on the support and that measured in a state where only the conductive layer is left on the support by peeling each layer (such as the photosensitive layer) on the conductive layer from the electrophotographic photosensitive member show the same value.
In order to prevent the injection of a charge from the conductive layer to the photosensitive layer, an undercoat layer (barrier layer) having electric barrier property may be provided between the conductive layer and the photosensitive layer.
The undercoat layer can be formed by coating the conductive layer with an undercoat-layer coating solution containing a resin (binder material) and drying the resultant coating film.
Examples of the resin (binder material) to be used in the undercoat layer include a polyvinyl alcohol, a polyvinyl methyl ether, a polyacrylic acids, a methylcellulose, an ethylcellulose, a polyglutamic acid, casein, starch, and other water-soluble resins, a polyamide, a polyimide, a polyamide-imide, a polyamic acid, a melamine resin, an epoxy resin, a polyurethane, and a polyglutamate. Of those, thermoplastic resins are preferred to effectively express the electric barrier property of the undercoat layer. Of the thermoplastic resins, a thermoplastic polyamide is preferred. The polyamide is preferably a copolymerized nylon.
The thickness of the undercoat layer is preferably 0.1 μm or more and 2.0 μm or less.
In addition, an electron-transporting substance (electron-accepting substance such as an acceptor) may be contained in the undercoat layer to prevent the flow of charge from being disrupted in the undercoat layer.
Examples of the electron-transporting substance include electron-withdrawing substances such as 2,4,7-trinitrofluorenone, 2,4,5,7-tetranitrofluorenone, chloranil, and tetracyanoquinodimethane, and polymers of those electron-withdrawing substances.
The photosensitive layer is provided on the conductive layer (undercoat layer).
Examples of the charge-generating substance to be used in the photosensitive layer include: azo pigments such as monoazo, disazo, and trisazo; phthalocyanine pigments such as metal phthalocyanine and non-metal phthalocyanine; indigo pigments such as indigo and thioindigo; perylene pigments such as perylene acid anhydride and perylene acid imide; polycyclic quinone pigments such as anthraquinone and pyrenequinone; squarylium dyes; pyrylium salts and thiapyrylium salts; triphenylmethane dyes; quinacridone pigments; azulenium salt pigments; cyanine dyes; xanthene dyes; quinonimine dyes; and styryl dyes. Of those, metal phthalocyanines such as oxytitanium phthalocyanine, hydroxygallium phthalocyanine, and chlorogallium phthalocyanine are preferred.
When the photosensitive layer is a laminated type photosensitive layer, the charge-generating layer can be formed by applying a charge-generating-layer coating solution, which is prepared by dispersing a charge-generating substance into a solvent together with a binder material, and then drying the resultant coating film. As a dispersion method, there are given, for example, methods using a homogenizer, an ultrasonic wave, a ball mill, a sand mill, an attritor, and a roll mill.
Examples of the binder material to be used in the charge-generating layer include a polycarbonate, a polyester, a polyarylate, a butyral resin, a polystyrene, a polyvinyl acetal, a diallyl phthalate resin, an acrylic resin, a methacrylic resin, a vinyl acetate resin, a phenol resin, a silicone resin, a polysulfone, a styrene-butadiene copolymer, an alkyd resin, an epoxy resin, a urea resin, and a vinyl chloride-vinyl acetate copolymer. Those binder materials may be used alone or as a mixture or a copolymer of two or more kinds thereof.
The ratio of the charge-generating substance to the binder material (charge-generating substance:binder material) falls within the range of preferably 10:1 to 1:10 (mass ratio), more preferably 5:1 to 1:1 (mass ratio).
Examples of the solvent to be used in the charge-generating-layer coating solution include an alcohol, a sulfoxide, a ketone, an ether, an ester, an aliphatic halogenated hydrocarbon, and an aromatic compound.
The thickness of the charge-generating layer is preferably 5 μm or less, more preferably 0.1 μm or more and 2 μm or less.
Further, any of various sensitizers, antioxidants, UV absorbers, plasticizers, and the like may be added to the charge-generating layer as required. Further, an electron-transporting substance (electron-accepting substance such as an acceptor) may be contained in the charge-generating layer to prevent the flow of charge from being disrupted in the charge-generating layer.
Examples of the electron-transporting substance include electron-withdrawing substances such as 2,4,7-trinitrofluorenone, 2,4,5,7-tetranitrofluorenone, chloranil, and tetracyanoquinodimethane, and polymers of those electron-withdrawing substances.
Examples of the charge-transporting substance to be used in the photosensitive layer include a triarylamine compound, a hydrazone compound, a styryl compound, a stilbene compound, a pyrazoline compound, an oxazole compound, a thiazole compound, and a triarylmethane compound.
When the photosensitive layer is a laminated type photosensitive layer, the charge-transporting layer can be formed by applying a charge-transporting-layer coating solution, which is prepared by dissolving a charge-transporting substance and a binder material in a solvent, and then drying the resultant coating film.
Examples of the binder material to be used in the charge-transporting layer include an acrylic resin, a styrene resin, a polyester, a polycarbonate, a polyarylate, a polysulfone, a polyphenylene oxide, an epoxy resin, a polyurethane, an alkyd resin, and an unsaturated resin. Those binder materials may be used alone or as a mixture or a copolymer of two or more kinds thereof.
The ratio of the charge-transporting substance to the binder material (charge-transporting substance:binder material) preferably falls within the range of 2:1 to 1:2 (mass ratio).
Examples of the solvent to be used in the charge-transporting-layer coating solution include: ketones such as acetone and methyl ethyl ketone; esters such as methyl acetate and ethyl acetate; ethers such as dimethoxymethane and dimethoxyethane; aromatic hydrocarbons such as toluene and xylene; and hydrocarbons each substituted by a halogen atom, such as chlorobenzene, chloroform, and carbon tetrachloride.
The thickness of the charge-transporting layer is preferably 3 μm or more and 40 μm or less, more preferably 4 μm or more and 30 μm or less from the viewpoints of charging uniformity and image reproducibility.
Further, an antioxidant, a UV absorber, or a plasticizer may be added to the charge-transporting layer as required.
When the photosensitive layer is a single-layer type photosensitive layer, the single-layer type photosensitive layer can be formed by applying a single-layer-type-photosensitive-layer coating solution containing a charge-generating substance, a charge-transporting substance, a binder material, and a solvent, and then drying the resultant coating film. As the charge-generating substance, the charge-transporting substance, the binder material, and the solvent, for example, those of various kinds described above can be used.
Further, a protective layer may be formed on the photosensitive layer to protect the photosensitive layer. The protective layer can be formed by applying a protective-layer coating solution containing a resin (binder material), and then drying and/or curing the resultant coating film.
The thickness of the protective layer is preferably 0.5 μm or more and 10 μm or less, more preferably 1 μm or more and 8 μm to less.
In the application of each of the coating solutions corresponding to the respective layers, coating methods such as dip coating, spray coating, spinner coating, roller coating, Meyer bar coating, and blade coating may be employed.
In
The circumferential surface of the electrophotographic photosensitive member 1 to be driven to rotate is uniformly charged at a positive or negative predetermined potential by a charging device (such as a primary charging device or a charging roller) 3, and then receives exposure light (image exposure light) 4 emitted from an exposing device (not shown) such as a slit exposure or a laser-beam scanning exposure. Thus, electrostatic latent images corresponding to images of interest are sequentially formed on the circumferential surface of the electrophotographic photosensitive member 1. A voltage to be applied to the charging device 3 may be only a DC voltage, or may be a DC voltage superimposed with an AC voltage.
The electrostatic latent images formed on the circumferential surface of the electrophotographic photosensitive member 1 are converted into toner images by development with toner of a developing device 5. Subsequently, the toner images formed on the circumferential surface of the electrophotographic photosensitive member 1 are transferred to a transfer material (such as paper) P by a transfer bias from a transferring device (such as a transfer roller) 6. The transfer material P is fed with a transfer material feeding device (not shown) to a portion (abutment portion) between the electrophotographic photosensitive member 1 and the transferring device 6 in synchronization with the rotation of the electrophotographic photosensitive member 1.
The transfer material P which has received the transfer of the toner images is separated from the circumferential surface of the electrophotographic photosensitive member 1, introduced to a fixing device 8, subjected to image fixation, and then printed as an image-formed product (print or copy) out of the apparatus.
The circumferential surface of the electrophotographic photosensitive member 1 after the transfer of the toner images undergoes removal of the remaining toner after the transfer by a cleaning device (such as a cleaning blade) 7. Further, the circumferential surface of the electrophotographic photosensitive member 1 is subjected to a neutralization process with pre-exposure light 11 from a pre-exposing device (not shown) and then repeatedly used in image formation. It should be noted that, when the charging device is a contact-charging device such as a charging roller, the pre-exposure is not always required. It should also be noted that, when the electrophotographic apparatus adopts a cleaner-less system, the cleaning device is not always required.
The electrophotographic photosensitive member 1 and at least one structural component selected from the charging device 3, the developing device 5, the transferring device 6, the cleaning device 7, and the like may be housed in a container and then integrally supported as a process cartridge. In addition, the process cartridge may be detachably mountable to the main body of an electrophotographic apparatus. In
Hereinafter, the present invention is described in more detail by way of specific examples, provided that the present invention is not limited thereto. It should be noted that the term “part(s)” in each of Examples and Comparative Examples means “part(s) by mass,” the term “average particle diameter” means “average primary particle diameter,” the unit “%” of a coating ratio in each table means “% by mass,” and the unit “%” of a doping ratio (doping amount) means “% by mass.” In addition, densities in Examples and the tables are each a value determined by the foregoing method and are each represented in the unit of “g/cm3.”
<Preparation Examples of Conductive-Layer Coating Solutions>
(Preparation Example of Conductive-Layer Coating Solution CP-1)
112.00 Parts of P-doped tin oxide-coated titanium oxide particles (average primary particle diameter: 230 nm, powder resistivity: 5,000 Ω·cm, amount (doping ratio) of phosphorus doped into tin oxide: 4.50% by mass, coating ratio: 45% by mass, density: 5.1 g/cm3) as a first metal oxide particle, 3.00 parts of P-doped tin oxide particles (average primary particle diameter: 20 nm, powder resistivity: 300 Ω·cm, amount (doping ratio) of phosphorus doped into tin oxide: 3.60% by mass, density: 6.8 g/cm3) as a second metal oxide particle, 266.67 parts of a phenol resin (trade name: PLYOPHEN J-325, manufactured by DIC Corporation, resin solid content: 60% by mass) as a binding material, and 120 parts of 1-methoxy-2-propanol as a solvent were loaded into a sand mill using 465 parts of glass beads each having a diameter of 0.8 mm, and were then subjected to a dispersion treatment under the following dispersion treatment conditions to provide a dispersion solution: a disc rotation number of 2,000 rpm, a dispersion treatment time of 4.5 hours, and a setting temperature of cooling water of 18° C.
The glass beads were removed from the dispersion solution with a mesh. After that, 5.00 parts of silicone resin particles (trade name: TOSPEARL 120, manufactured by Momentive Performance Materials Inc., average particle diameter: 2 μm) as a surface roughness providing material and 0.30 part of a silicone oil (trade name: SH28PA, manufactured by Dow Corning Toray Silicone Co., Ltd.) as a leveling agent were added to the dispersion solution, and then the mixture was stirred for 30 minutes to prepare a conductive-layer coating solution CP-1.
(Preparation Examples of Conductive-Layer Coating Solutions CP-2 to CP-93, CP-141 to CP-233, CP-281 to CP-373, CP-421 to CP-513, and CP-561 to CP-653)
Conductive-layer coating solutions CP-2 to CP-93, CP-141 to CP-233, CP-281 to CP-373, CP-421 to CP-513, and CP-561 to CP-653 were prepared by the same operations as those of the preparation example of the conductive-layer coating solution CP-1 except that the kind (including a coating ratio, a doping ratio, and a density, the same holds true for the following) and amount of the first metal oxide particle, the kind (including a doping ratio and a density, the same holds true for the following) and amount of the second metal oxide particle, and the amount of the binding material were changed as shown in Tables 1 to 3, 8 to 10, 15 to 17, 44 to 46, and 49 to 51.
It should be noted that P-doped tin oxide-coated titanium oxide particles used as the first metal oxide particle in the preparation of the conductive-layer coating solutions CP-2 to CP-93 had a powder resistivity of 5,000 Ω·cm.
In addition, P-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-7, CP-13, CP-19, CP-24, CP-29, CP-35, CP-40, CP-45, CP-50, CP-55, CP-61, CP-66, CP-71, CP-77, CP-83, and CP-89 had a powder resistivity of 300 Ω·cm.
In addition, P-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-2, CP-8, CP-14, CP-20, CP-25, CP-30, CP-36, CP-41, CP-46, CP-51, CP-56, CP-62, CP-67, CP-72, CP-78, CP-84, and CP-90 had a powder resistivity of 250 Ω·cm. In addition, P-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-3, CP-6, CP-9, CP-12, CP-15, CP-18, CP-21, CP-26, CP-31, CP-34, CP-37, CP-42, CP-47, CP-52, CP-57, CP-60, CP-63, CP-68, CP-73, CP-76, CP-79, CP-82, CP-85, CP-88, and CP-91 had a powder resistivity of 200 Ω·cm.
In addition, P-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-4, CP-10, CP-16, CP-22, CP-27, CP-32, CP-38, CP-43, CP-48, CP-53, CP-58, CP-64, CP-69, CP-74, CP-80, CP-86, and CP-92 had a powder resistivity of 150 Ω·cm.
In addition, P-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-5, CP-11, CP-17, CP-23, CP-28, CP-33, CP-39, CP-44, CP-49, CP-54, CP-59, CP-65, CP-70, CP-75, CP-81, CP-87, and CP-93 had a powder resistivity of 100 Ω·cm.
In addition, W-doped tin oxide-coated titanium oxide particles used as the first metal oxide particle in the preparation of the conductive-layer coating solutions CP-141 to CP-233 had a powder resistivity of 3,000 Ω·cm.
In addition, W-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-141, CP-147, CP-153, CP-159, CP-164, CP-169, CP-175, CP-180, CP-185, CP-190, CP-195, CP-201, CP-206, CP-211, CP-217, CP-223, and CP-229 had a powder resistivity of 180 Ω·cm.
In addition, W-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-142, CP-148, CP-154, CP-160, CP-165, CP-170, CP-176, CP-181, CP-186, CP-191, CP-196, CP-202, CP-207, CP-212, CP-218, CP-224, and CP-230 had a powder resistivity of 140 Ω·cm.
In addition, W-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-143, CP-146, CP-149, CP-152, CP-155, CP-158, CP-161, CP-166, CP-171, CP-174, CP-177, CP-182, CP-187, CP-192, CP-197, CP-200, CP-203, CP-208, CP-213, CP-216, CP-219, CP-222, CP-225, CP-228, and CP-231 had a powder resistivity of 100 Ω·cm.
In addition, W-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-144, CP-150, CP-156, CP-162, CP-167, CP-172, CP-178, CP-183, CP-188, CP-193, CP-198, CP-204, CP-209, CP-214, CP-220, CP-226, and CP-232 had a powder resistivity of 70 Ω·cm.
In addition, W-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-145, CP-151, CP-157, CP-163, CP-168, CP-173, CP-179, CP-184, CP-189, CP-194, CP-199, CP-205, CP-210, CP-215, CP-221, CP-227, and CP-233 had a powder resistivity of 30 Ω·cm.
In addition, F-doped tin oxide-coated titanium oxide particles used as the first metal oxide particle in the preparation of the conductive-layer coating solutions CP-281 to CP-373 had a powder resistivity of 5,000 Ω·cm.
In addition, F-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-281, CP-287, CP-293, CP-299, CP-304, CP-309, CP-315, CP-320, CP-325, CP-330, CP-335, CP-341, CP-346, CP-351, CP-357, CP-363, and CP-369 had a powder resistivity of 300 Ω·cm.
In addition, F-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-282, CP-288, CP-294, CP-300, CP-305, CP-310, CP-316, CP-321, CP-326, CP-331, CP-336, CP-342, CP-347, CP-352, CP-358, CP-364 and CP-370 had a powder resistivity of 270 Ω·cm.
In addition, F-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-283, CP-286, CP-289, CP-292, CP-295, CP-298, CP-301, CP-306, CP-311, CP-314, CP-317, CP-322, CP-327, CP-332, CP-337, CP-340, CP-343, CP-348, CP-353, CP-356, CP-359, CP-362, CP-365, CP-368, and CP-371 had a powder resistivity of 220 Ω·cm.
In addition, F-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-284, CP-290, CP-296, CP-302, CP-307, CP-312, CP-318, CP-323, CP-328, CP-333, CP-338, CP-344, CP-349, CP-354, CP-360, CP-366, and CP-372 had a powder resistivity of 170 Ω·cm.
In addition, F-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-285, CP-291, CP-297, CP-303, CP-308, CP-313, CP-319, CP-324, CP-329, CP-334, CP-339, CP-345, CP-350, CP-355, CP-361, CP-367, and CP-373 had a powder resistivity of 130 Ω·cm.
In addition, Nb-doped tin oxide-coated titanium oxide particles used as the first metal oxide particle in the preparation of the conductive-layer coating solutions CP-421 to CP-513 had a powder resistivity of 6,500 Ω·cm.
In addition, Nb-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-421, CP-427, CP-433, CP-439, CP-444, CP-449, CP-455, CP-460, CP-465, CP-470, CP-475, CP-481, CP-486, CP-491, CP-497, CP-503, and CP-509 had a powder resistivity of 400 Ω·cm.
In addition, Nb-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-422, CP-428, CP-434, CP-440, CP-445, CP-450, CP-456, CP-461, CP-466, CP-471, CP-476, CP-482, CP-487, CP-492, CP-498, CP-504, and CP-510 had a powder resistivity of 360 Ω·cm.
In addition, Nb-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-423, CP-426, CP-429, CP-432, CP-435, CP-438, CP-441, CP-446, CP-451, CP-454, CP-457, CP-462, CP-467, CP-472, CP-477, CP-480, CP-483, CP-488, CP-493, CP-496, CP-499, CP-502, CP-505, CP-508, and CP-511 had a powder resistivity of 330 Ω·cm.
In addition, Nb-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-424, CP-430, CP-436, CP-442, CP-447, CP-452, CP-458, CP-463, CP-468, CP-473, CP-478, CP-484, CP-489, CP-494, CP-500, CP-506, and CP-512 had a powder resistivity of 300 Ω·cm.
In addition, Nb-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-425, CP-431, CP-437, CP-443, CP-448, CP-453, CP-459, CP-464, CP-469, CP-474, CP-479, CP-485, CP-490, CP-495, CP-501, CP-507, and CP-513 had a powder resistivity of 270 Ω·cm.
In addition, Ta-doped tin oxide-coated titanium oxide particles used as the first metal oxide particle in the preparation of the conductive-layer coating solutions CP-561 to CP-653 had a powder resistivity of 4,500 Ω·cm.
In addition, Ta-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-561, CP-567, CP-573, CP-579, CP-584, CP-589, CP-595, CP-600, CP-605, CP-610, CP-615, CP-621, CP-626, CP-631, CP-637, CP-643, and CP-649 had a powder resistivity of 270 Ω·cm.
In addition, Ta-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-562, CP-568, CP-574, CP-580, CP-585, CP-590, CP-596, CP-601, CP-606, CP-611, CP-616, CP-622, CP-627, CP-632, CP-638, CP-644, and CP-650 had a powder resistivity of 200 Ω·cm.
In addition, Ta-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-563, CP-566, CP-569, CP-572, CP-575, CP-578, CP-581, CP-586, CP-591, CP-594, CP-597, CP-602, CP-607, CP-612, CP-617, CP-620, CP-623, CP-628, CP-633, CP-636, CP-639, CP-642, CP-645, CP-648, and CP-651 had a powder resistivity of 160 Ω·cm.
In addition, Ta-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-564, CP-570, CP-576, CP-582, CP-587, CP-592, CP-598, CP-603, CP-608, CP-613, CP-618, CP-624, CP-629, CP-634, CP-640, CP-646, and CP-652 had a powder resistivity of 110 Ω·cm.
In addition, Ta-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-565, CP-571, CP-577, CP-583, CP-588, CP-593, CP-599, CP-604, CP-609, CP-614, CP-619, CP-625, CP-630, CP-635, CP-641, CP-647, and CP-653 had a powder resistivity of 65 Ω·cm.
(Preparation Examples of Conductive-Layer Coating Solutions CP-94 to CP-140, CP-234 to CP-280, CP-374 to CP-420, CP-514 to CP-560, and CP-654 to CP-700)
Conductive-layer coating solutions CP-94 to CP-140, CP-234 to CP-280, CP-374 to CP-420, CP-514 to CP-560, and CP-654 to CP-700 were prepared by the same operations as those of the preparation example of the conductive-layer coating solution CP-1 except that: the kind and amount of the first metal oxide particle, the kind and amount of the second metal oxide particle, the amount of the binding material, and the amount of the silicone resin particles were changed as shown in Tables 3, 4, 11, 12, 18, 19, 46, 47, 52, and 53; and the operation for the dispersion treatment was carried out by adding 30.00 parts of uncoated titanium oxide particles (powder resistivity: 5.0×107 Ω·cm, average particle diameter: 210 nm, density: 4.2 g/cm3) at the time of the operation for the dispersion treatment. It should be noted that when the conductive-layer coating solutions CP-139, CP-279, CP-419, CP-559, and CP-699 were prepared, the disc rotation number and dispersion treatment time in the dispersion treatment conditions were changed to 2,500 rpm and 10 hours, respectively. In addition, when the conductive-layer coating solutions CP-140, CP-280, CP-420, CP-560, and CP-700 were prepared, the disc rotation number and dispersion treatment time in the dispersion treatment conditions were changed to 2,500 rpm and 30 hours, respectively.
It should be noted that P-doped tin oxide-coated titanium oxide particles used as the first metal oxide particle in the preparation of the conductive-layer coating solutions CP-94 to CP-140 had a powder resistivity of 5,000 Ω·cm.
In addition, P-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-94, CP-99, CP-104, CP-109, CP-114, CP-119, CP-124, CP-129, and CP-134 had a powder resistivity of 300 Ω·cm.
In addition, P-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-95, CP-100, CP-105, CP-110, CP-115, CP-120, CP-125, CP-130, and CP-135 had a powder resistivity of 250 Ω·cm.
In addition, P-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-96, CP-101, CP-106, CP-111, CP-116, CP-121, CP-126, CP-131, CP-136, CP-139, and CP-140 had a powder resistivity of 200 Ω·cm.
In addition, P-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-97, CP-102, CP-107, CP-112, CP-117, CP-122, CP-127, CP-132, and CP-137 had a powder resistivity of 150 Ω·cm.
In addition, P-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-98, CP-103, CP-108, CP-113, CP-118, CP-123, CP-128, CP-133, and CP-138 had a powder resistivity of 100 Ω·cm.
In addition, W-doped tin oxide-coated titanium oxide particles used as the first metal oxide particle in the preparation of the conductive-layer coating solutions CP-234 to CP-280 had a powder resistivity of 3,000 Ω·cm.
In addition, W-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-234, CP-239, CP-244, CP-249, CP-254, CP-259, CP-264, CP-269, and CP-274 had a powder resistivity of 180 Ω·cm.
In addition, W-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-235, CP-240, CP-245, CP-250, CP-255, CP-260, CP-265, CP-270, and CP-275 had a powder resistivity of 140 Ω·cm.
In addition, W-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-236, CP-241, CP-246, CP-251, CP-256, CP-261, CP-266, CP-271, CP-276, CP-279, and CP-280 had a powder resistivity of 100 Ω·cm.
In addition, W-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-237, CP-242, CP-247, CP-252, CP-257, CP-262, CP-267, CP-272, and CP-277 had a powder resistivity of 70 Ω·cm.
In addition, W-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-238, CP-243, CP-248, CP-253, CP-258, CP-263, CP-268, CP-273, and CP-278 had a powder resistivity of 30 Ω·cm.
In addition, F-doped tin oxide-coated titanium oxide particles used as the first metal oxide particle in the preparation of the conductive-layer coating solutions CP-374 to CP-420 had a powder resistivity of 5,000 Ω·cm.
In addition, F-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-374, CP-379, CP-384, CP-389, CP-394, CP-399, CP-404, CP-409, and CP-414 had a powder resistivity of 300 Ω·cm.
In addition, F-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-375, CP-380, CP-385, CP-390, CP-395, CP-400, CP-405, CP-410, and CP-415 had a powder resistivity of 270 Ω·cm.
In addition, F-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-376, CP-381, CP-386, CP-391, CP-396, CP-401, CP-406, CP-411, CP-416, CP-419, and CP-420 had a powder resistivity of 220 Ω·cm.
In addition, F-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-377, CP-382, CP-387, CP-392, CP-397, CP-402, CP-407, CP-412, and CP-417 had a powder resistivity of 170 Ω·cm.
In addition, F-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-378, CP-383, CP-388, CP-393, CP-398, CP-403, CP-408, CP-413, and CP-418 had a powder resistivity of 130 Ω·cm.
In addition, Nb-doped tin oxide-coated titanium oxide particles used as the first metal oxide particle in the preparation of the conductive-layer coating solutions CP-514 to CP-560 had a powder resistivity of 6,500 Ω·cm.
In addition, Nb-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-514, CP-519, CP-524, CP-529, CP-534, CP-539, CP-544, CP-549, and CP-554 had a powder resistivity of 400 Ω·cm. In addition, Nb-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-515, CP-520, CP-525, CP-530, CP-535, CP-540, CP-545, CP-550, and CP-555 had a powder resistivity of 360 Ω·cm.
In addition, Nb-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-516, CP-521, CP-526, CP-531, CP-536, CP-541, CP-546, CP-551, CP-556, CP-559, and CP-560 had a powder resistivity of 330 Ω·cm.
In addition, Nb-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-517, CP-522, CP-527, CP-532, CP-537, CP-542, CP-547, CP-552, and CP-557 had a powder resistivity of 300 Ω·cm.
In addition, Nb-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-518, CP-523, CP-528, CP-533, CP-538, CP-543, CP-548, CP-553, and CP-558 had a powder resistivity of 270 Ω·cm.
In addition, Ta-doped tin oxide-coated titanium oxide particles used as the first metal oxide particle in the preparation of the conductive-layer coating solutions CP-654 to CP-700 had a powder resistivity of 4,500 Ω·cm.
In addition, Ta-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-654, CP-659, CP-664, CP-669, CP-674, CP-679, CP-684, CP-689, and CP-694 had a powder resistivity of 270 Ω·cm.
In addition, Ta-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-655, CP-660, CP-665, CP-670, CP-675, CP-680, CP-685, CP-690, and CP-695 had a powder resistivity of 200 Ω·cm.
In addition, Ta-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-656, CP-661, CP-666, CP-671, CP-676, CP-681, CP-686, CP-691, CP-696, CP-699, and CP-700 had a powder resistivity of 160 Ω·cm.
In addition, Ta-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-657, CP-662, CP-667, CP-672, CP-677, CP-682, CP-687, CP-692, and CP-697 had a powder resistivity of 110 Ω·cm.
In addition, Ta-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-658, CP-663, CP-668, CP-673, CP-678, CP-683, CP-688, CP-693, and CP-698 had a powder resistivity of 65 Ω·cm.
(Preparation Examples of Conductive-Layer Coating Solutions CP-C1 to CP-C22, CP-C42 to CP-C63, CP-C76 to CP-C97, CP-C107 to CP-C128, and CP-C129 to CP-C150)
Conductive-layer coating solutions CP-C1 to CP-C22, CP-C42 to CP-C63, CP-C76 to CP-C97, CP-C107 to CP-C128, and CP-C129 to CP-C150 were prepared by the same operations as those of the preparation example of the conductive-layer coating solution CP-1 except that the kind and amount of the first metal oxide particle, the kind and amount of the second metal oxide particle, and the amount of the binding material were changed (including a change as to whether or not the first metal oxide particle or the second metal oxide particle were used, the same holds true for the following) as shown in Tables 5, 13, 20, 48, and 54.
It should be noted that P-doped tin oxide-coated titanium oxide particles used as the first metal oxide particle in the preparation of the conductive-layer coating solutions CP-C1 to CP-C9 and CP-C13 to CP-C22 had a powder resistivity of 5,000 Ω·cm.
In addition, P-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-C4 to CP-C22 had a powder resistivity of 200 Ω·cm.
In addition, W-doped tin oxide-coated titanium oxide particles used as the first metal oxide particle in the preparation of the conductive-layer coating solutions CP-C42 to CP-050 and CP-054 to CP-C63 had a powder resistivity of 3,000 Ω·cm.
In addition, W-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-C45 to CP-C63 had a powder resistivity of 100 Ω·cm.
In addition, F-doped tin oxide-coated titanium oxide particles used as the first metal oxide particle in the preparation of the conductive-layer coating solutions CP-C76 to CP-C84 and CP-C88 to CP-C97 had a powder resistivity of 5,000 Ω·cm.
In addition, F-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-C79 to CP-C97 had a powder resistivity of 220 Ω·cm.
In addition, Nb-doped tin oxide-coated titanium oxide particles used as the first metal oxide particle in the preparation of the conductive-layer coating solutions CP-C107 to CP-C115 and CP-C119 to CP-C128 had a powder resistivity of 6,500 Ω·cm.
In addition, Nb-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-C110 to CP-C128 had a powder resistivity of 330 Ω·cm.
In addition, Ta-doped tin oxide-coated titanium oxide particles used as the first metal oxide particle in the preparation of the conductive-layer coating solutions CP-C129 to CP-C137 and CP-C141 to CP-C150 had a powder resistivity of 4,500 Ω·cm.
In addition, Ta-doped tin oxide particles used as the second metal oxide particle in the preparation of the conductive-layer coating solutions CP-C132 to CP-C150 had a powder resistivity of 160 Ω·cm.
(Preparation Examples of Conductive-Layer Coating Solutions CP-C23 to CP-C35, CP-C64 to CP-C71, CP-C98 to CP-C105, CP-C151 to CP-C178, and CP-C179)
Conductive-layer coating solutions CP-C23 to CP-C35, CP-C64 to CP-C71, CP-C98 to CP-C105, and CP-C151 to CP-C179 were prepared by the same operations as those of the preparation example of the conductive-layer coating solution CP-1 except that the kind and amount of the first metal oxide particle, the kind and amount of the second metal oxide particle, and the amount of the binding material were changed as shown in Tables 6, 7, 14, 21, and 55 to 58. It should be noted that in the tables, for example, titanium oxide particles coated with oxygen-deficient tin oxide (oxygen-deficient tin oxide-coated titanium oxide particles) do not correspond to the first metal oxide particle according to the present invention and oxygen-deficient tin oxide particles do not correspond to the second metal oxide particle according to the present invention, but the particles were shown in the respective columns for convenience as examples to be compared with the present invention. The same holds true for the following.
It should be noted that P-doped tin oxide-coated titanium oxide particles used in the preparation of the conductive-layer coating solutions CP-C26 to CP-C28, CP-C31 to CP-C32, CP-C153, and CP-C154 had a powder resistivity of 5,000 Ω·cm.
In addition, P-doped tin oxide-coated barium sulfate particles used in the preparation of the conductive-layer coating solution CP-C35 had a powder resistivity of 5,000 Ω·cm.
In addition, P-doped tin oxide particles used in the preparation of the conductive-layer coating solutions CP-C23 to CP-C25, CP-C29, CP-C30, CP-C35, CP-151, and CP-152 had a powder resistivity of 200 Ω·cm.
In addition, W-doped tin oxide-coated titanium oxide particles used in the preparation of the conductive-layer coating solutions CP-C67 to CP-C69, CP-C104, CP-C157, and CP-C158 had a powder resistivity of 3,000 Ω·cm.
In addition, W-doped tin oxide-coated barium sulfate particles used in the preparation of the conductive-layer coating solution CP-C71 had a powder resistivity of 3,000 Ω·cm.
In addition, W-doped tin oxide particles used in the preparation of the conductive-layer coating solutions CP-C31, CP-C64 to CP-C66, CP-C70, CP-C71, CP-C155, and CP-C156 had a powder resistivity of 100 Ω·cm.
In addition, F-doped tin oxide-coated titanium oxide particles used in the preparation of the conductive-layer coating solutions CP-C30, CP-C70, CP-C101 to CP-C103, CP-C161, and CP-C162 had a powder resistivity of 5,000 Ω·cm.
In addition, F-doped tin oxide-coated barium sulfate particles used in the preparation of the conductive-layer coating solution CP-C105 had a powder resistivity of 5,000 Ω·cm.
In addition, F-doped tin oxide particles used in the preparation of the conductive-layer coating solutions CP-C32, CP-C159, and CP-C160 had a powder resistivity of 220 Ω·cm.
In addition, Nb-doped tin oxide-coated titanium oxide particles used in the preparation of the conductive-layer coating solutions CP-C151, CP-C155, CP-C159, CP-C166 to CP-C168, and CP-C170 had a powder resistivity of 6,500 Ω·cm.
In addition, Nb-doped tin oxide-coated barium sulfate particles used in the preparation of the conductive-layer coating solution CP-C171 had a powder resistivity of 6,500 Ω·cm.
In addition, Nb-doped tin oxide particles used in the preparation of the conductive-layer coating solutions CP-C153, CP-C157, CP-C161, CP-C163 to CP-C165, CP-C169, and CP-C171 had a powder resistivity of 330 Ω·cm.
In addition, Ta-doped tin oxide-coated titanium oxide particles used in the preparation of the conductive-layer coating solutions CP-C152, CP-C156, CP-C160, CP-C169, and CP-C175 to CP-C177 had a powder resistivity of 4,500 Ω·cm.
In addition, Ta-doped tin oxide-coated barium sulfate particles used in the preparation of the conductive-layer coating solution CP-C178 had a powder resistivity of 4,500 Ω·cm.
In addition, Ta-doped tin oxide particles used in the preparation of the conductive-layer coating solutions CP-C154, CP-C158, CP-C162, CP-C170, CP-C172 to CP-C174, and CP-C178 had a powder resistivity of 160 Ω·cm.
In addition, oxygen-deficient tin oxide-coated titanium oxide particles used in the preparation of the conductive-layer coating solutions CP-C23, CP-C64, CP-C98, CP-C163, and CP-C172 had a powder resistivity of 5,000 Ω·cm.
In addition, oxygen-deficient tin oxide-coated barium sulfate particles used in the preparation of the conductive-layer coating solutions CP-C24, CP-C33, CP-C65, CP-C99, CP-C164, CP-C173, and CP-C179 had a powder resistivity of 5,000 Ω·cm.
In addition, Sb-doped tin oxide-coated titanium oxide particles used in the preparation of the conductive-layer coating solutions CP-C25, CP-C34, CP-C66, CP-C100, CP-C165, and CP-C174 had a powder resistivity of 3,000 Ω·cm.
In addition, oxygen-deficient tin oxide particles used in the preparation of the conductive-layer coating solutions CP-C26, CP-C33, CP-C67, CP-C101, CP-C166, CP-C175, and CP-C179 had a powder resistivity of 200 Ω·cm.
In addition, indium tin oxide particles used in the preparation of the conductive-layer coating solutions CP-C27, CP-C68, CP-C102, CP-C167, and CP-C176 had a powder resistivity of 100 Ω·cm.
In addition, Sb-doped tin oxide particles used in the preparation of the conductive-layer coating solutions CP-C28, CP-C34, CP-C69, CP-C103, CP-C168, and CP-C177 had a powder resistivity of 100 Ω·cm.
(Preparation Example of Conductive-Layer Coating Solution CP-C36)
The intermediate-layer coating liquid of Example 1 described in Patent Literature 4 was prepared by the following operations and defined as a conductive-layer coating solution CP-C36.
That is, 20 parts of barium sulfate particles coated with oxygen-deficient tin oxide (coating ratio: 50% by mass, average primary particle diameter: 600 nm, specific gravity: 5.1 (density=5.1 g/cm3)), 100 parts of a tin oxide particle doped with antimony (trade name: T-1, manufactured by Mitsubishi Materials Corporation, average primary particle diameter: 20 nm, powder resistivity: 5 Ω·cm, specific gravity: 6.6 (density=6.6 g/cm3)), 70 parts of a resol-type phenol resin (trade name: PLYOPHEN J-325, manufactured by DIC Corporation, resin solid content: 60%) as a binding material, and 100 parts of 2-methoxy-1-propanol were loaded into a ball mill, and were then subjected to a dispersion treatment for 20 hours to prepare a conductive-layer coating solution CP-C36.
(Preparation Example of Conductive-Layer Coating Solution CP-C37)
A conductive-layer coating solution CP-C37 was prepared by the same operations as those of the preparation example of the conductive-layer coating solution CP-C36 except that the tin oxide particle doped with antimony were changed to a tin oxide particle doped with tantalum (average primary particle diameter: 20 nm, specific gravity: 6.1 (density=6.1 g/cm3)).
(Preparation Example of Conductive-Layer Coating Solution CP-C38)
The conductive layer coating fluid L-7 described in Patent Literature 2 was prepared by the following operations and defined as a conductive-layer coating solution CP-C38.
That is, 46 parts of P-doped tin oxide-coated titanium oxide particles (average primary particle diameter: 220 nm, powder resistivity: 100 Ω·cm, amount (doping ratio) of phosphorus doped into tin oxide: 7% by mass, coating ratio: 15%), 36.5 parts of a phenol resin (trade name: PLYOPHEN J-325, manufactured by DIC Corporation, resin solid content: 60% by mass) as a binding material, and 50 parts of 1-methoxy-2-propanol as a solvent were loaded into a sand mill using glass beads each having a diameter of 0.5 mm, and were then subjected to a dispersion treatment under the following dispersion treatment conditions to provide a dispersion solution: a disc rotation number of 2,500 rpm and a dispersion treatment time of 3.5 hours.
3.9 Parts of silicone resin particles (trade name: TOSPEARL 120, manufactured by Momentive Performance Materials Inc., average particle diameter: 2 μm) as a surface roughness providing material and 0.001 part of a silicone oil (trade name: SH28PA, manufactured by Dow Corning Toray Silicone Co., Ltd.) as a leveling agent were added to the dispersion solution, and then the mixture was stirred to prepare a conductive-layer coating solution CP-C38.
(Preparation Example of Conductive-Layer Coating Solution CP-C39)
The conductive layer coating fluid L-21 described in Patent Literature 2 was prepared by the following operations and defined as a conductive-layer coating solution CP-C39.
That is, 44 parts of P-doped tin oxide-coated titanium oxide particles (average primary particle diameter: 40 nm, powder resistivity: 500 Ω·cm, amount (doping ratio) of phosphorus doped into tin oxide: 8% by mass, coating ratio: 20%), 36.5 parts of a phenol resin (trade name: PLYOPHEN J-325, manufactured by DIC Corporation, resin solid content: 60% by mass) as a binding material, and 50 parts of 1-methoxy-2-propanol as a solvent were loaded into a sand mill using glass beads each having a diameter of 0.5 mm, and were then subjected to a dispersion treatment under the following dispersion treatment conditions to provide a dispersion solution: a disc rotation number of 2,500 rpm and a dispersion treatment time of 3.5 hours.
3.9 Parts of silicone resin particles (trade name: TOSPEARL 120, manufactured by Momentive Performance Materials Inc., average particle diameter: 2 μm) as a surface roughness providing material and 0.001 part of a silicone oil (trade name: SH28PA, manufactured by Dow Corning Toray Silicone Co., Ltd.) as a leveling agent were added to the dispersion solution, and then the mixture was stirred to prepare a conductive-layer coating solution CP-C39.
(Preparation Example of Conductive-Layer Coating Solution CP-C40)
The conductive layer coating fluid 1 described in Patent Literature 1 was prepared by the following operations and defined as a conductive-layer coating solution CP-C40.
That is, 204 parts of P-doped tin oxide-coated titanium oxide particles (powder resistivity: 40 Ω·cm, coating ratio: 35% by mass, amount (doping ratio) of phosphorus doped into tin oxide: 3% by mass), 148 parts of a phenol resin (trade name: PLYOPHEN J-325, manufactured by DIC Corporation, resin solid content: 60% by mass) as a binding material, and 98 parts of 1-methoxy-2-propanol as a solvent were loaded into a sand mill using 450 parts of glass beads each having a diameter of 0.8 mm, and were then subjected to a dispersion treatment under the following dispersion treatment conditions to provide a dispersion solution: a number of rotation of 2,000 rpm, a dispersion treatment time of 4 hours, and a setting temperature of cooling water of 18° C.
The glass beads were removed from the dispersion solution with a mesh. After that, 13.8 parts of silicone resin particles (trade name: TOSPEARL 120, manufactured by Momentive Performance Materials Inc., average particle diameter: 2 μm) as a surface roughness providing material, 0.014 part of a silicone oil (trade name: SH28PA, manufactured by Dow Corning Toray Silicone Co., Ltd.) as a leveling agent, 6 parts of methanol, and 6 parts of 1-methoxy-2-propanol were added to the dispersion solution, and then the mixture was stirred to prepare a conductive-layer coating solution CP-C40.
(Preparation Example of Conductive-Layer Coating Solution CP-C41)
The conductive layer coating fluid 4 described in Patent Literature 1 was prepared by the following operations and defined as a conductive-layer coating solution CP-C41.
That is, 204 parts of P-doped tin oxide-coated titanium oxide particles (powder resistivity: 500 Ω·cm, coating ratio: 35% by mass, amount (doping ratio) of phosphorus (P) doped into tin oxide (SnO2): 0.05% by mass), 148 parts of a phenol resin (trade name: PLYOPHEN J-325, manufactured by DIC Corporation, resin solid content: 60% by mass) as a binding material, and 98 parts of 1-methoxy-2-propanol as a solvent were loaded into a sand mill using 450 parts of glass beads each having a diameter of 0.8 mm, and were then subjected to a dispersion treatment under the following dispersion treatment conditions to provide a dispersion solution: a number of rotation of 2,000 rpm, a dispersion treatment time of 4 hours, and a setting temperature of cooling water of 18° C.
The glass beads were removed from the dispersion solution with a mesh. After that, 13.8 parts of silicone resin particles (trade name: TOSPEARL 120, manufactured by Momentive Performance Materials Inc., average particle diameter: 2 μm) as a surface roughness providing material, 0.014 part of a silicone oil (trade name: SH28PA, manufactured by Dow Corning Toray Silicone Co., Ltd.) as a leveling agent, 6 parts of methanol, and 6 parts of 1-methoxy-2-propanol were added to the dispersion solution, and then the mixture was stirred to prepare a conductive-layer coating solution CP-C41.
(Preparation Example of Conductive-Layer Coating Solution CP-C72)
The conductive layer coating fluid L-10 described in Patent Literature 2 was prepared by the following operations and defined as a conductive-layer coating solution CP-C72.
That is, 53 parts of W-doped tin oxide-coated titanium oxide particles (average primary particle diameter: 220 nm, powder resistivity: 150 Ω·cm, amount (doping ratio) of tungsten doped into tin oxide: 7% by mass, coating ratio: 15%), 36.5 parts of a phenol resin (trade name: PLYOPHEN J-325, manufactured by DIC Corporation, resin solid content: 60% by mass) as a binding material, and 50 parts of 1-methoxy-2-propanol as a solvent were loaded into a sand mill using glass beads each having a diameter of 0.5 mm, and were then subjected to a dispersion treatment under the following dispersion treatment conditions to provide a dispersion solution: a disc rotation number of 2,500 rpm and a dispersion treatment time of 3.5 hours.
The glass beads were removed from the dispersion solution with a mesh. After that, 3.9 parts of silicone resin particles (trade name: TOSPEARL 120, manufactured by Momentive Performance Materials Inc., average particle diameter: 2 μm) as a surface roughness providing material and 0.001 part of a silicone oil (trade name: SH28PA, manufactured by Dow Corning Toray Silicone Co., Ltd.) as a leveling agent were added to the dispersion solution, and then the mixture was stirred to prepare a conductive-layer coating solution CP-C72.
(Preparation Example of Conductive-Layer Coating Solution CP-C73)
The conductive layer coating fluid L-22 described in Patent Literature 2 was prepared by the following operations and defined as a conductive-layer coating solution CP-C73.
That is, 46 parts of W-doped tin oxide-coated titanium oxide particles (average primary particle diameter: 40 nm, powder resistivity: 550 Ω·cm, amount (doping ratio) of tungsten doped into tin oxide: 8% by mass, coating ratio: 20%), 36.5 parts of a phenol resin (trade name: PLYOPHEN J-325, manufactured by DIC Corporation, resin solid content: 60% by mass) as a binding material, and 50 parts of 1-methoxy-2-propanol as a solvent were loaded into a sand mill using glass beads each having a diameter of 0.5 mm, and were then subjected to a dispersion treatment under the following dispersion treatment conditions to provide a dispersion solution: a disc rotation number of 2,500 rpm and a dispersion treatment time of 3.5 hours.
3.9 Parts of silicone resin particles (trade name: TOSPEARL 120, manufactured by Momentive Performance Materials Inc., average particle diameter: 2 μm) as a surface roughness providing material and 0.001 part of a silicone oil (trade name: SH28PA, manufactured by Dow Corning Toray Silicone Co., Ltd.) as a leveling agent were added to the dispersion solution, and then the mixture was stirred to prepare the conductive layer coating fluid L-22 described in Patent Literature 2. The coating solution was defined as the conductive-layer coating solution CP-C73.
(Preparation Example of Conductive-Layer Coating Solution CP-C74)
The conductive layer coating fluid 10 described in Patent Literature 1 was prepared by the following operations and defined as a conductive-layer coating solution CP-C74.
That is, 204 parts of W-doped tin oxide-coated titanium oxide particles (powder resistivity: 25 Ω·cm, coating ratio: 33% by mass, amount (doping ratio) of tungsten doped into tin oxide: 3% by mass), 148 parts of a phenol resin (trade name: PLYOPHEN J-325, manufactured by DIC Corporation, resin solid content: 60% by mass) as a binding material, and 98 parts of 1-methoxy-2-propanol as a solvent were loaded into a sand mill using 450 parts of glass beads each having a diameter of 0.8 mm, and were then subjected to a dispersion treatment under the following dispersion treatment conditions to provide a dispersion solution: a number of rotation of 2,000 rpm, a dispersion treatment time of 4 hours, and a setting temperature of cooling water of 18° C.
The glass beads were removed from the dispersion solution with a mesh. After that, 13.8 parts of silicone resin particles (trade name: TOSPEARL 120, manufactured by Momentive Performance Materials Inc., average particle diameter: 2 μm) as a surface roughness providing material, 0.014 part of a silicone oil (trade name: SH28PA, manufactured by Dow Corning Toray Silicone Co., Ltd.) as a leveling agent, 6 parts of methanol, and 6 parts of 1-methoxy-2-propanol were added to the dispersion solution, and then the mixture was stirred to prepare a conductive-layer coating solution CP-C74.
(Preparation Example of Conductive-Layer Coating Solution CP-C75)
The conductive layer coating fluid 13 described in Patent Literature 1 was prepared by the following operations and defined as a conductive-layer coating solution CP-C75.
That is, 204 parts of W-doped tin oxide-coated titanium oxide particles (powder resistivity: 69 Ω·cm, coating ratio: 33% by mass, amount (doping ratio) of tungsten doped into tin oxide: 0.1% by mass), 148 parts of a phenol resin (trade name: PLYOPHEN J-325, manufactured by DIC Corporation, resin solid content: 60% by mass) as a binding material, and 98 parts of 1-methoxy-2-propanol as a solvent were loaded into a sand mill using 450 parts of glass beads each having a diameter of 0.8 mm, and were then subjected to a dispersion treatment under the following dispersion treatment conditions to provide a dispersion solution: a number of rotation of 2,000 rpm, a dispersion treatment time of 4 hours, and a setting temperature of cooling water of 18° C.
The glass beads were removed from the dispersion solution with a mesh. After that, 13.8 parts of silicone resin particles (trade name: TOSPEARL 120, manufactured by Momentive Performance Materials Inc., average particle diameter: 2 um) as a surface roughness providing material, 0.014 part of a silicone oil (trade name: SH28PA, manufactured by Dow Corning Toray Silicone Co., Ltd.) as a leveling agent, 6 parts of methanol, and 6 parts of 1-methoxy-2-propanol were added to the dispersion solution, and then the mixture was stirred to prepare a conductive-layer coating solution CP-C75.
(Preparation Example of Conductive-Layer Coating Solution CP-C106)
The conductive layer coating fluid L-30 described in Patent Literature 2 was prepared by the following operations and defined as a conductive-layer coating solution CP-C106.
That is, 60 parts of F-doped tin oxide-coated titanium oxide particles (average primary particle diameter: 75 nm, powder resistivity: 300 Ω·cm, amount (doping ratio) of fluorine doped into tin oxide: 7% by mass, coating ratio: 15%), 36.5 parts of a phenol resin (trade name: PLYOPHEN J-325, manufactured by DIC Corporation, resin solid content: 60% by mass) as a binding material, and 50 parts of 1-methoxy-2-propanol as a solvent were loaded into a sand mill using glass beads each having a diameter of 0.5 mm, and were then subjected to a dispersion treatment under the following dispersion treatment conditions to provide a dispersion solution: a disc rotation number of 2,500 rpm and a dispersion treatment time of 3.5 hours.
The glass beads were removed from the dispersion solution with a mesh. After that, 3.9 parts of silicone resin particles (trade name: TOSPEARL 120, manufactured by Momentive Performance Materials Inc., average particle diameter: 2 μm) as a surface roughness providing material and 0.001 part of a silicone oil (trade name: SH28PA, manufactured by Dow Corning Toray Silicone Co., Ltd.) as a leveling agent were added to the dispersion solution, and then the mixture was stirred to prepare a conductive-layer coating solution CP-C106.
An aluminum cylinder (JIS-A3003, aluminum alloy) having a length of 251.5 mm, a diameter of 24 mm, and a thickness of 1.0 mm produced by a production method including an extrusion process and a drawing process was used as a support (cylindrical support).
The conductive-layer coating solution CP-1 was applied onto the support under a 22° C./55% RH environment by dip coating, and then the resultant coating film was dried and thermally cured for 30 minutes at 140° C. to form a conductive layer having a thickness of 20 μm.
The volume resistivity of the conductive layer was measured to be 2.2×1013 Ω·cm.
Next, 4.5 parts of N-methoxymethylated nylon (trade name: Toresin EF-30T, manufactured by Teikoku Chemical Industry Co., Ltd.) and 1.5 parts of a copolymerized nylon resin (trade name: Amilan CM8000, manufactured by Toray Industries, Inc.) were dissolved in a mixed solvent of 65 parts of methanol and 30 parts of n-butanol to prepare an undercoat-layer coating solution. The undercoat-layer coating solution was applied onto the conductive layer by dip coating, and then the resultant coating film was dried for 6 minutes at 70° C. to form an undercoat layer having a thickness of 0.85 μm.
Next, 10 parts of a hydroxygallium phthalocyanine crystal (charge-generating substance) in a crystal form having strong peaks at Bragg angles)(2θ±0.2° in CuKα-characteristic X-ray diffraction of 7.5°, 9.9°, 16.3°, 18.6°, 25.1°, and 28.3°, 5 parts of a polyvinyl butyral (trade name: S-LEC BX-1, manufactured by SEKISUI CHEMICAL, CO., LTD.), and 250 parts of cyclohexanone were loaded into a sand mill using glass beads each having a diameter of 1 mm, and were then subjected to a dispersion treatment under the condition of a dispersion treatment time of 3 hours. After the dispersion treatment, 250 parts of ethyl acetate were added to the treated product to prepare a charge-generating-layer coating solution. The charge-generating-layer coating solution was applied onto the undercoat layer by dip coating, and then the resultant coating film was dried for 10 minutes at 100° C. to form a charge-generating layer having a thickness of 0.12 μm.
Next, 56 parts of an amine compound (charge-transporting substance) represented by the following formula (CT-1):
24 parts of an amine compound (charge-transporting substance) represented by the following formula (CT-2):
90 parts of a polycarbonate (trade name: Z200, manufactured by Mitsubishi Engineering-Plastics Corporation), 10 parts of a siloxane-modified polycarbonate having a repeating structural unit represented by the following formula (B-1) and a repeating structural unit represented by the following formula (B-2) ((B-1):(B-2)=98:2 (molar ratio)):
and 0.9 part of a siloxane-modified polycarbonate having a repeating structural unit represented by the following formula (B-3) and a repeating structural unit represented by the following formula (B-4), and having a terminal structure represented by the following formula (B-5) ((B-3):(B-4)=95:5 (molar ratio)):
were dissolved in a mixed solvent of 300 parts of o-xylene, 250 parts of dimethoxymethane, and 27 parts of methyl benzoate to prepare a charge-transporting-layer coating solution. The charge-transporting-layer coating solution was applied onto the charge-generating layer by dip coating, and then the resultant coating film was dried for 30 minutes at 120° C. to form a charge-transporting layer having a thickness of 18.5 μm. Thus, an electrophotographic photosensitive member 1 including the charge-transporting layer as a surface layer was produced.
With regard to the electrophotographic photosensitive member 1, the abundance ratio of phosphorus to tin oxide in the P-doped tin oxide-coated titanium oxide particles and the abundance ratio of phosphorus to tin oxide in the P-doped tin oxide particles were each determined from an atomic ratio by employing the foregoing method.
Next, the volume of the P-doped tin oxide-coated titanium oxide particles and the volume of the P-doped tin oxide particles were measured by identifying the P-doped tin oxide-coated titanium oxide particles and the P-doped tin oxide particles based on their difference in contrast of the slice and view of the FIB-SEM by employing the foregoing method. The same holds true for the following examples.
Electrophotographic photosensitive members 2 to 700 and C1 to C179 were produced by the same operations as those of Example 1 (production example of the electrophotographic photosensitive member 1) except that the conductive-layer coating solution was changed as shown in Tables 22 to 43 and Tables 59 to 73.
(Evaluation)
An evaluation for a crack was performed by observing the surface of a conductive layer at the stage of the formation of the conductive layer on a support with an optical microscope and by observing an image output from an electrophotographic apparatus (laser beam printer) mounted with a produced electrophotographic photosensitive member.
The image observation was performed as described below.
The produced electrophotographic photosensitive member was mounted on a laser beam printer manufactured by Hewlett-Packard Company (trade name: LaserJet P2055dn) as an evaluation apparatus. The resultant was placed under a normal-temperature and normal-humidity (23° C./50% RH) environment, and then a solid black image, a solid white image, and a half-tone image of a one-dot keima pattern were output, followed by the observation of the output images. The half-tone image of a one-dot keima pattern is a half-tone image of a pattern illustrated in
The degrees of the occurrence of the crack were classified into ranks based on the observation of the images and the following microscopic observation of the conductive layer as described below.
The case where the observation of the surface of the conductive layer with the optical microscope could not confirm the occurrence of any crack was defined as a rank 3. In addition, the case where the observation of the surface of the conductive layer with the optical microscope was able to confirm the occurrence of a crack but an image defect due to the crack was not observed on any one of the solid black image, the solid white image, and the half-tone image of a one-dot keima pattern was defined as a rank 2. In addition, the case where the observation of the surface of the conductive layer with the optical microscope was able to confirm the occurrence of a crack, and an image defect probably due to the crack was observed on any one of the solid black image, the solid white image, and the half-tone image of a one-dot keima pattern was defined as a rank 1. The half-tone image of a one-dot keima pattern is a half-tone image of a pattern illustrated in
An evaluation for a residual potential and an evaluation for a pattern memory were also performed with a laser beam printer manufactured by Hewlett-Packard Company (trade name: LaserJet P2055dn) as an evaluation apparatus.
The evaluation for a pattern memory was performed as described below.
A produced electrophotographic photosensitive member was mounted on the laser beam printer manufactured by Hewlett-Packard Company. The resultant was placed under a low-temperature and low-humidity (15° C./7% RH) environment, and then a durability test involving continuously outputting 15,000 images of a 3-dot and 100-space vertical line pattern in a repeated manner was performed. The degrees of the occurrence of a pattern memory were classified into six ranks as shown in Table 74 according to the manner in which vertical streaks resulting from the hysteresis of the vertical lines were observed on each of four kinds of half-tone images and a solid black image shown in Table 74 output after the test. The number of the rank becomes larger as the extent to which the pattern memory is suppressed improves. It should be noted that the four kinds of half-tone images are a half-tone image of a one-dot keima pattern, a half-tone image with one-dot and one-space lateral lines, a half-tone image with two-dot and three-space lateral lines, and a half-tone image with one-dot and two-space lateral lines.
The evaluation for a residual potential was performed as described below.
Before and after the durability test, residual potentials after continuous output of three solid white images and five solid black images were measured. An increase in residual potential of 10 V or less was defined as a rank 4. In addition, an increase of more than 10 V and 20 V or less was defined as a rank 3. In addition, an increase of more than 20 V and 30 V or less was defined as a rank 2. In addition, an increase of more than 30 V was defined as a rank 1.
Tables 22 to 43 and Tables 59 to 73 show the results.
While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.
This application claims the benefit of Japanese Patent Applications No. 2012-189532, filed on Aug. 30, 2012, No. 2013-077617, filed on Apr. 3, 2013, and No. 2013-177141, filed on Aug. 28, 2013, which are hereby incorporated by reference herein in its entirety.
1 electrophotographic photosensitive member
2 axis
3 charging device (primary charging device)
4 exposure light (image exposure light)
5 developing device
6 transferring device (such as transfer roller)
7 cleaning device (such as cleaning blade)
8 fixing device
9 process cartridge
10 guiding device
11 pre-exposure light
P transfer material (such as paper)
| Number | Date | Country | Kind |
|---|---|---|---|
| 2012-189532 | Aug 2012 | JP | national |
| 2013-077617 | Apr 2013 | JP | national |
| 2013-177141 | Aug 2013 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2013/073860 | 8/29/2013 | WO | 00 |
| Publishing Document | Publishing Date | Country | Kind |
|---|---|---|---|
| WO2014/034960 | 3/6/2014 | WO | A |
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