Claims
- 1. An electrostatic clutch operable by the Johnsen-Rahbek effect, comprising:
- a rotatable drum and a band engageable therewith, said drum including an engageable surface which is a semiconductive surface comprising a layer of substantially pure silicon carbide on a conductive substrate, said layer having a thickness between about 10 .mu.m and 2,500 .mu.m and containing a dopant in an amount effective to cause the resistivity of the layer to be within a range of from about 10.sup.5 to 10.sup.7 ohm-cm.
- 2. An electrostatic clutch as claimed in claim 1, wherein said layer of silicon carbide is an amorphous layer prepared by sputtering.
- 3. An electrostatic clutch as claimed in claim 1, wherein said layer of silicon carbide is a crystalline layer prepared by vapor deposition.
- 4. An electrostatic clutch as claimed in claim 1, wherein said layer of silicon carbide has a thickness between 10 .mu.m and 1,500 .mu.m.
- 5. An electrostatic clutch as claimed in claim 1, wherein said layer of silicon carbide has a thickness of between 100 .mu.m and 500 .mu.m.
- 6. An electrostatic clutch as claimed in claim 1, wherein said dopant is boron.
- 7. An electrostatic clutch as claimed in claim 1, wherein said dopant is aluminum.
- 8. An electrostatic clutch as claimed in claim 1, wherein said dopant is gallium.
- 9. An electrostatic clutch as claimed in claim 1, wherein said dopant is indium.
- 10. An electrostatic clutch as claimed in claim 1, wherein said dopant is thallium.
- 11. An electrostatic clutch as claimed in claim 1, wherein said dopant is nitrogen.
- 12. An electrostatic clutch as claimed in claim 1, wherein said dopant is phosphorous.
- 13. An electrostatic clutch as claimed in claim 1, wherein said dopant is arsenic.
- 14. An electrostatic clutch as claimed in claim 1, wherein said dopant is antimony.
- 15. An electrostatic clutch as claimed in claim 1, wherein said dopant is bismuth.
- 16. An electrostatic clutch as claimed in claim 1, wherein said dopant is hydrogen.
- 17. An electrostatic clutch as claimed in claim 1, wherein said band is formed of stainless steel.
- 18. An electrostatic clutch as claimed in claim 1, wherein said band is formed of a tungsten alloy.
- 19. An electrostatic clutch as claimed in claim 1, wherein said conductive substrate is carbon.
- 20. An electrostatic clutch as claimed in claim 1, wherein said conductive substrate is silicon.
- 21. An electrostatic clutch as claimed in claim 1, wherein said conductive substrate is molybdenum.
- 22. An electrostatic clutch as claimed in claim 1, wherein said conductive substrate is stainless steel.
- 23. An electrostatic clutch as claimed in claim 1, wherein said conductive substrate is a titanium alloy.
- 24. An electrostatic clutch as claimed in claim 1, wherein said conductive substrate is an aluminum alloy.
Parent Case Info
This is a continuation of application Ser. No. 91,310, filed Nov. 5, 1979, now abandoned.
US Referenced Citations (8)
Foreign Referenced Citations (1)
Number |
Date |
Country |
994676 |
Jun 1965 |
GBX |
Continuations (1)
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Number |
Date |
Country |
Parent |
91310 |
Nov 1979 |
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