Claims
- 1. An electrostatic discharge protection apparatus with a silicon control rectifier, comprising:a bottom layer; a P-well, formed on the bottom layer; a first source/drain region, formed in the P-well; a second source/drain region, formed in the P-well; a gate, formed on the P-well between the first and the second source/drain regions; a selective epitaxial growth region, formed on the first source/drain region and adjacent to the gate; and an N+ region, formed in and protruding from the P-well to have a bottom portion adjacent to the bottom layer and a top portion adjacent to the gate.
- 2. The structure according to claim 1, wherein the bottom layer further comprises:a substrate layer, as a bottom portion of the bottom layer; and an insulation layer, formed on the substrate layer.
- 3. The structure according to claim 2, wherein the substrate layer comprises a P-type substrate.
- 4. The structure according to claim 2, wherein the insulation layer comprises a silicon dioxide layer.
- 5. The structure according to claim 1, wherein the gate further comprises a pair of spacers formed on a pair of sidewalls thereon so that the selective epitaxial growth region and the N+ region are adjacent to each of the spacers, respectively.
- 6. The structure according to claim 1, wherein the selective epitaxial growth region comprises a P-type region.
- 7. The structure according to claim 1, wherein each of the first and the second source/drain regions comprises an N-type region with a dopant concentration lower than that of the N+ region.
Priority Claims (1)
Number |
Date |
Country |
Kind |
89108501 A |
May 2000 |
TW |
|
CROSS-REFERENCE TO RELATED APPLICATION
This application claims the priority benefit of Taiwan application serial no. 89108501, filed May 4, 2000.
US Referenced Citations (7)