Claims
- 1. A method of manufacturing an endoluminal stent capable of radially expanding from a first diameter to a second diameter, comprising the steps of:
a. providing a substrate having an exterior surface capable of accommodating metal deposition thereupon; b. depositing a stent-forming metal onto the substrate by a vacuum deposition method; c. removing the substrate from the endoluminal stent formed thereupon.
- 2. The method according to claim 1, wherein step (a) further comprises the step of imparting a pattern onto the exterior surface of the substrate.
- 3. The method according to claim 2, wherein step (b) further comprises the step of depositing the stent-forming metal onto the pattern onto the substrate.
- 4. The method according to claim 1, further comprises the step of depositing a sacrificial layer of a material onto the substrate prior to step (b).
- 5. The method according to claim 1, wherein step (b) is conducted by ion beam-assisted evaporative deposition.
- 6. The method according to claim 1, wherein step (b) is conducted by sputtering.
- 7. The method according to claim 5, wherein the ion beam-assisted evaporative deposition is conducted in the presence of an inert gas.
- 8. The method according to claim 1, wherein the substrate is a cylindrical substrate.
- 9. The method according to claim 1, wherein the substrate is a planar substrate.
- 10. The method according to claim 7, wherein the inert gas is selected from the group consisting of argon, xenon, nitrogen and neon.
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a divisional application and corresponds to and claims priority of pending U.S. utility patent application, Ser. No. 09/433,929, filed Nov. 19, 1999.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09433929 |
Nov 1999 |
US |
Child |
09745304 |
Dec 2000 |
US |