The present application relates generally to systems and methods for energy-resolved x-ray detection.
Many elements have x-ray fluorescence (XRF) lines in the lower energy end of the x-ray spectrum (e.g., having energies in a range below 4 keV and/or wavelengths greater than 0.2 nm, sometimes referred to as “soft” x-rays and/or “tender” x-rays). Detection and energy measurement of such x-rays can be challenging for various reasons, at least some of which include but are not limited to:
Some commercially available low energy x-ray detectors are based on the creation of electron-hole pairs in semiconductor materials (e.g., silicon; germanium), for example, silicon drift detectors, charge-coupled-device (CCD) detector arrays, complementary metal-oxide-semiconductor (CMOS) detector arrays. Other available low energy x-ray detectors utilize electron emission and multiplication from gases, channeltrons, channel plates, avalanche photodiodes, etc., as well as scintillators (e.g., in conjunction with photomultiplier tubes and/or CCD arrays with or without imaging optics). However, most of these commercially available low energy x-ray detectors do not provide energy resolution that is better than ±50 eV. Other commercially available low energy x-ray detectors utilize x-ray microcalorimeters and/or transition-edge x-ray detectors, which can provide energy resolution of 5 eV or better, but that are operated at liquid helium temperatures.
In one aspect disclosed herein, an energy-resolving x-ray detection system is provided, the system comprising at least one x-ray optic configured to receive x-rays having an energy bandwidth with a maximum x-ray energy. The at least one x-ray optic comprises at least one concave surface extending at least partially around and along a longitudinal axis. The at least one concave surface is curved in at least one cross-sectional plane parallel to the longitudinal axis and is configured to direct at least some of the received x-rays into at least one convergent x-ray beam having a minimum beam width in a plane perpendicular to the longitudinal axis. The minimum beam width is at a location and the at least one concave surface has an x-ray reflectivity less than 30% for x-rays having energies greater than one-third of the maximum x-ray energy. The system further comprises at least one energy-dispersive x-ray detector configured to receive at least a portion of the at least one convergent x-ray beam. The at least one energy-dispersive x-ray detector comprises at least one x-ray absorbing element configured to generate detection signals indicative of energies of x-rays absorbed by the at least one x-ray absorbing element. The at least one x-ray absorbing element is within a range of zero to 40 mm from the location of the minimum beam width.
In another aspect disclosed herein, an energy-resolving x-ray detection system is provided, the system comprising at least one x-ray optic configured to receive x-rays having a first energy bandwidth with a first maximum x-ray energy. The at least one x-ray optic comprises at least one substrate comprising a first material and at least one concave surface extending at least partially around and along a longitudinal axis. The at least one concave surface is curved in at least one cross-sectional plane parallel to the longitudinal axis and is configured to direct at least some of the received x-rays into at least one x-ray beam. The at least one concave surface comprises at least one layer on or over at least a portion of the at least one substrate. The at least one layer comprises a second material having a mass density greater than 3 g/cm3 and a thickness greater than 10 nm, the second material different from the first material. The system further comprises at least one energy-dispersive x-ray detector configured to receive at least a portion of the at least one x-ray beam.
In certain embodiments, a distance of the at least one concave surface 114 from the longitudinal axis 120 varies as a function of position along the longitudinal axis 120. For example, the concave surface 114 can comprise an inner surface of a hollow axially symmetric structure (e.g., an axially symmetric tube) having an inner diameter which varies as a function of position along the longitudinal axis 120. In certain such embodiments, at least a portion of the structure can be tapered (e.g., having a first inner diameter at a first position along the longitudinal axis 120 and having a second inner diameter at a second position along the longitudinal axis 120, the second inner diameter smaller than the first inner diameter; a portion of a tapered cone profile). At least a portion of the concave surface 114 of certain embodiments can have a distance from the longitudinal axis 120 that does not vary as a function of position along the longitudinal axis 120. For example, the portion of the concave surface 114 can comprise an inner surface of a structure having an inner diameter that does not substantially vary (e.g., does not vary by more than 10%) as a function of position along the longitudinal axis 120.
In certain embodiments, at least a portion of the concave surface 114 has a profile that comprises a portion of a quadric profile in a cross-sectional plane that comprises the longitudinal axis 120. In certain embodiments, the at least one concave surface 114 comprises multiple portions having cross-sectional profiles (e.g., in a cross-sectional plane that comprises the longitudinal axis 120) comprising corresponding quadric profiles. Examples of quadric profiles compatible with certain embodiments described herein include, but are not limited to: at least one ellipsoid; at least one paraboloid; at least one hyperboloid; or a combination of two or more thereof.
In certain embodiments, the at least one x-ray optic 110 comprises at least one substrate 112 (e.g., comprising glass or silicon oxide) comprises a single, unitary element. For example, the substrate 112 can comprise a hollow axially symmetric structure (e.g., a tube) extending along the longitudinal axis 120 and the at least one concave surface 114 comprises an inner surface of the structure that extends fully around the longitudinal axis 120 (e.g., encircles the longitudinal axis 120; extends 360 degrees around the longitudinal axis 120). In certain other embodiments, the at least one substrate 112 comprises at least one portion of a hollow axially symmetric structure (e.g., a portion of an axially symmetric tube) extending along the longitudinal axis 120 with an inner surface that extends only partially around the longitudinal axis 120 (e.g., less than 360 degrees; in a range of 45 degrees to 315 degrees; in a range of 45 degrees to 360 degrees; in a range of 180 degrees to 360 degrees; in a range of 90 degrees to 270 degrees). In certain embodiments, the at least one substrate 112 comprises multiple substrate portions (e.g., 2, 3, 4, 5, 6, or more) separate from one another (e.g., with spaces between the substrate portions) and distributed around the longitudinal axis 120, with the concave surface 114 of each substrate portion extending at least partially around and along the longitudinal axis 120. For example, the concave surfaces 114 of the multiple substrate portions can each extend around the longitudinal axis 120 by an angle in a range of 15 degrees to 175 degrees, in a range of 30 degrees to 115 degrees, and/or in a range of 45 degrees to 85 degrees.
In certain embodiments, the at least one concave surface 114 has a first linear dimension (e.g., length) parallel to the longitudinal axis 120 in a range of 3 mm to 150 mm, a second linear dimension (e.g., width) perpendicular to the first linear dimension in a range of 1 mm to 50 mm, and a maximum linear dimension (e.g., an inner diameter; a maximum length of a straight line segment joining two points on the concave surface 114) in a range of 1 mm to 50 mm in a plane perpendicular to the longitudinal axis 120, a surface roughness in a range of 0.1 nm to 1 nm, and/or a plurality of surface tangent planes having a range of angles relative to the longitudinal axis 120 in a range of 0.01 radian to 0.5 radian (e.g., in a range of 0.01 radian to 0.4 radian; in a range of 0.01 radian to 0.3 radian; in a range of 0.01 radian to 0.2 radian).
For example,
For another example,
In certain embodiments, the system 100 further comprises at least one layer on or over a portion of the at least one concave surface 114, such that the at least one concave surface 114 has an x-ray reflectivity that varies as a function of incident x-ray energy. For example, the at least one x-ray optic 110 can comprise at least one substrate 112, and the at least one concave surface 114 can comprise at least one surface of the at least one substrate 112 and the at least one layer can be on or over at least a portion of the at least one surface of the at least one substrate 112. The substrate 112 can comprise a first material (e.g., glass; silicon oxide) and the at least one layer can comprise a second material different from the first material (e.g., having a mass density greater than 3 g/cm3 and a thickness greater than 10 nm). For example,
In certain embodiments, the at least one layer can comprise a mosaic crystal structure and/or a plurality of layers (e.g., a multilayer stack; a stack of layers that have been sequentially deposited onto the concave surface 114 and one another, the layers having selected materials and selected thicknesses). The mosaic crystal structure can comprise one or more mosaic graphite crystal structures, including but not limited to, highly oriented pyrolytic graphite (HOPG), highly annealed pyrolytic graphite (HAPG), or a combination thereof, and the at least one mosaic crystal structure can have a thickness in a range of 5 microns to 100 microns (e.g., 10 microns to 100 microns) and a mosaicity (e.g., mosaic spread) in a range of 0.05 degree to 1 degree (e.g., 0.1 degree to 1 degree). The plurality of layers can comprise a first plurality of first layers comprising a first material and a second plurality of second layers comprising a second material, the first layers and the second layers alternating with one another in a direction perpendicular to the concave surface 114. For example, the at first material and the second material of the plurality of alternating layers can have a mass density difference of more than 1 g/cm3 between neighboring layers of the plurality of alternating layers and each of the alternating layers can have a thickness in a range of 1 nm to 9 nm. In certain embodiments, the plurality of layers are formed by at least one of: atomic layer deposition (ALD), chemical-vapor deposition (CVD), sputtering, or a combination of two or more thereof. In certain embodiments, the plurality of layers modifies the critical angle, thereby increasing the solid angle acceptance of the at least one x-ray optic 110. The at least one mosaic crystal structure and/or the plurality of layers can be configured to direct (e.g., diffract) at least some of the x-rays 10 received by the at least one x-ray optic 110 towards the at least one energy-dispersive x-ray detector 130. Examples of a mosaic crystal structure and a plurality of layers compatible with certain embodiments described herein are disclosed in U.S. Provisional Appl. No. 62/680,451, filed Jun. 4, 2018 and U.S. Provisional Appl. No. 62/680,795 filed Jun. 5, 2018, each of which is incorporated in its entirety by reference herein, and in the U.S. non-provisional application entitled “Wavelength Dispersive X-Ray Spectrometer” filed on even date herewith and incorporated in its entirety by reference herein.
In certain embodiments, at least one concave surface 114 has an x-ray reflectivity that is less than 30% for x-rays having energies greater than a predetermined x-ray energy (e.g., 5 keV; 7 keV; 9 keV; one-third of the maximum x-ray energy of the incident x-ray spectrum 300). As used herein, the maximum x-ray energy of the incident x-ray spectrum is the x-ray energy above which the incident x-ray spectrum is equal to zero. For example, for an x-ray tube in which the x-rays are generated by an electron beam bombarding a target material, the maximum x-ray energy of the generated x-rays is equal to the kinetic energy of the electron beam. The x-ray emission spectrum from a sample being irradiated by x-rays from such an x-ray source also has a maximum x-ray energy equal to the kinetic energy of the electron beam. For example, as schematically illustrated in
In certain embodiments, the system 100 further comprises at least one beam stop 180 configured to be placed in the x-ray beam path to stop (e.g., intercept; prevent) x-rays that are propagating along the longitudinal axis 120 but that do not irradiate the at least one x-ray optic 110 from reaching the at least one energy-dispersive x-ray detector 130. The at least one beam stop 180 of certain embodiments defines a cone angle (e.g., less than 3 degrees; less than 50 mrad) centered around the longitudinal axis 120. The at least one beam stop 180 can be positioned at the entrance side of the at least one x-ray optic 110 (see, e.g.,
In certain embodiments, the system 100 further comprises at least one x-ray transmissive aperture 400 between the at least one concave surface 114 and the at least one energy-dispersive x-ray detector 130, and
In certain embodiments, the at least one x-ray transmissive aperture 400 comprises at least one window 430 configured to be transmissive to at least a portion of the at least one convergent x-ray beam 20. For example, the at least one window 430 can be within the at least one orifice 410 of the at least one structure 420 and/or can be outside the at least one orifice 410 (e.g., mounted on a surface of the at least one structure 420). The at least one window 430 can have a thickness in a range of 20 nm to 2 microns and can comprise at least one of: diamond, silicon nitride, silicon carbide, and polymer. In certain embodiments, the at least one window 430 comprises at least one metallic layer having a thickness in a range of 30 nm to 200 nm and comprising at least one of: Al, Sc, Ti, V, Cr, Ni, Co, Cu, Zr, Mo, Ru, Rh, Pd, Ag, La, and alloys and/or combinations thereof.
As schematically illustrated by
In certain embodiments, at least a portion of the at least one x-ray transmissive aperture 400 is positioned within a range of zero to 40 mm from the location of the minimum beam width 22. For example, the at least one x-ray transmissive aperture 400 can be at or near (e.g., within 40 mm; within 20 mm; within 10 mm) the second focus 160 of the example system 100 schematically illustrated in
In certain embodiments the at least one energy-dispersive x-ray detector 130 has an energy resolution in a range of 0.5 eV to 130 eV. In certain embodiments, the at least one energy-dispersive x-ray detector 130 is selected from the group consisting of: a silicon drift x-ray detector (SDD), a superconductor-based x-ray microcalorimeter detector (e.g., comprising a plurality of active elements), a lithium drift Si x-ray detector, a lithium drift Ge x-ray detector, a p-i-n diode x-ray detector (e.g., with an active area with a length or width less than 1 mm), and a transition-edge x-ray detector (e.g., comprising a plurality of active elements). For example, the at least one x-ray absorbing element 132 can comprise a material (e.g., silicon; germanium; superconducting material) and corresponding electronics configured to detect an amount of ionization, electron/hole pair formation, and/or heat produced within the material by an incoming x-ray. In certain embodiments, the at least one energy-dispersive x-ray detector 130 comprises a single x-ray absorbing element 132, while in certain other embodiments, the at least one energy-dispersive x-ray detector 130 comprises a plurality of x-ray absorbing elements 132 arranged is a spatial array.
In certain embodiments, the at least one energy-dispersive x-ray detector 130 comprises a pixel array x-ray detector configured to record a spatial distribution of at least a portion of the x-rays 20 received from the at least one x-ray optic 110. Each pixel of the pixel array can be configured to generate detection signals indicative of the energies of x-rays absorbed by the pixel. For example, as disclosed in U.S. Provisional Appl. No. 62/680,451, filed June 4, 2018 and U.S. Provisional Appl. No. 62/680,795 filed June 5, 2018, each of which is incorporated in its entirety by reference herein, and in U.S. non-provisional application entitled “Wavelength Dispersive X-Ray Spectrometer” filed on even date herewith and incorporated in its entirety by reference herein, the x-rays 20 from the at least one x-ray optic 110 diverge from one another at the location of the minimum beam width 22 such that x-rays 20 with different x-ray energies are spatially distinct from one another due to the Bragg relation, and the x-rays 20 with a range of x-ray energies impinge the x-ray detector 130 across a corresponding range of positions. A spatially-resolving x-ray detector 130 of certain embodiments detects the x-rays 20 with a spatial resolution that can be related to an energy resolution.
In certain embodiments, the pixel array x-ray detector can be one-dimensional (e.g., extending along one dimension; extending along one direction perpendicular to the longitudinal axis 120) or can be two-dimensional (e.g., extending along two orthogonal dimensions; extending along two directions that are perpendicular to one another and to the longitudinal axis 120), with pixel sizes in a range from 1 micron to 200 microns (e.g., in a range of 2 microns to 200 microns; in a range of 3 microns to 200 microns). Example pixel array x-ray detectors 130 compatible with certain embodiments described herein include but are not limited to: direct-detection charge-coupled-device (CCD) detector, complementary metal-oxide-semiconductor (CMOS) detector, energy-resolving x-ray detector, indirect conversion detector comprising an x-ray scintillator, a photon counting detector.
In certain embodiments, the combination of the at least one x-ray optic 110 and the at least one energy-dispersive x-ray detector 130 provides advantages in the detection of soft and tender x-rays as compared to the at least one energy-dispersive x-ray detector 130 alone. For example, by using the at least one x-ray optic 110 to reduce the amount of higher energy x-rays (e.g., x-rays with energies above 10 keV) that impinge the at least one energy-dispersive x-ray detector 130, certain embodiments advantageously improve the signal-to-noise ratio by reducing the background contribution from these higher energy x-rays in the detected x-ray spectrum (e.g., due to incomplete charge collection in silicon drift detector elements), thereby making it easier to identify small peaks in the detected x-ray spectrum (e.g., XRF lines 302 with energies less than or equal to 5 keV, as schematically illustrated in
In certain embodiments, the combination of the at least one x-ray optic 110 and the at least one energy-dispersive x-ray detector 130 provides improved use of limited count rates as compared to the at least one energy-dispersive x-ray detector 130 alone. For example, CCD and CMOS detectors can provide energy resolutions down to about 50 eV, are only able to receive a single x-ray photon per read-out time, and typically use a thin window to prevent background contribution from visible light. Also, superconductor-based x-ray microcalorimeter detectors have high energy resolution (e.g., in a range of 1 eV to 2 eV), but are only able to take relatively low counting rates (e.g., less than 1 KHz/pixel). By reducing the amount of higher energy x-rays (e.g., x-rays with energies above 10 keV) that impinge the at least one energy-dispersive x-ray detector 130, certain embodiments advantageously reduce the fraction of the total number of counts that are due to the x-rays that are not of interest (e.g., higher energy x-rays), so a higher fraction of the limited count rate of such detector is devoted to detection of the soft and tender x-rays of interest (e.g., with energies below 5 keV).
In certain embodiments, the system 100 further comprises a means for calibrating the x-ray energy for each pixel of the pixel array (e.g., using the known x-ray spectrum of the x-rays emitted by the x-ray source). For example, the system 100 can be configured to receive the x-rays 10 emitted from an x-ray source having a known x-ray spectrum and to direct at least some of the received x-rays towards the at least one x-ray detector 130.
In certain embodiments, the system 100 is configured to have x-rays 20 in the 0.1 keV to 4 keV range impinge the at least one energy-dispersive x-ray detector 130, while in certain other embodiments, the range extends as high as 14 keV. Such x-ray energy ranges can be achieved using at least one coating on the at least one concave surface 114, the at least one coating comprising one or more layers having a mass density greater than 3 g/cm3, and the materials, thicknesses, and other parameters of the at least one coating in accordance with certain embodiments described herein are clear in view of the information provided herein. In certain embodiments, the system 100 is a component of an x-ray analysis system comprising an excitation source of radiation and/or particles (e.g., an x-ray source configured to emit x-rays; an electron source configured to emit electrons; a laboratory excitation source) that illuminate a sample (e.g., object being analyzed). In certain embodiments, the excitation source comprises an optical system (e.g., additional x-ray optics; electron optics) placed between the excitation source and the sample to direct and/or focus the radiation and/or particles onto the sample. The sample is configured to emit x-rays (e.g., fluorescence x-rays) in response to the excitation, and the emitted x-rays are received, detected, and analyzed by the system 100.
In certain embodiments, the system 100 (e.g., as schematically illustrated in
It is to be appreciated that the embodiments disclosed herein are not mutually exclusive and may be combined with one another in various arrangements.
The invention described and claimed herein is not to be limited in scope by the specific example embodiments herein disclosed, since these embodiments are intended as illustrations, and not limitations, of several aspects of the invention. Any equivalent embodiments are intended to be within the scope of this invention. Indeed, various modifications of the invention in form and detail, in addition to those shown and described herein, will become apparent to those skilled in the art from the foregoing description. The breadth and scope of the invention should not be limited by any of the example embodiments disclosed herein.
The present application claims the benefit of priority to U.S. Provisional Appl. No. 62/680,451, filed Jun. 4, 2018 and U.S. Provisional Appl. No. 62/680,795 filed Jun. 5, 2018, each of which is incorporated in its entirety by reference herein.
Number | Date | Country | |
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62680451 | Jun 2018 | US | |
62680795 | Jun 2018 | US |