Patent Application
20180182918
The present invention relates to light generating electronic components with improved light extraction and a method of manufacturing said electronic components. More particularly, the present invention relates to light emitting diodes (LEDs) with improved light extraction and a method of manufacturing said LEDs.
There are well-known problems in extracting light from LEDs formed in semiconductor structures such as Gallium Nitride (GaN).
For GaN LEDs, it is well known in the field that to grow thick and highly conductive p-type AlInGaN layers is difficult especially compared to that of n-type layers. Thus, typically the light emitting area, typically quantum wells (QW), is no more than 500 nm from the top surface. Commonly, devices are used in a flip-chip format so that light exits through a polished transparent sapphire substrate. The light emitted is isotropic and reflects off the top surface which is co-planar to the QW. Consequently, the angle of reflection is not altered at this interface and thus the reflected angle is not deliberately modified to be lower than that of the critical angle at the device interfaces.
Light generated at the quantum well in an LED structure is emitted in all directions. When the light reaches the boundary of a GaN or sapphire surface there is a change in refractive index of the material. If the light ray reaching the interface has an angle within an “escape cone” it will be partially emitted from the device. There are small Fresnel losses which change with angle so not all the light is transmitted. As the angle of incidence approaches or exceeds the escape cone, light will be reflected back into the device and may be absorbed as heat. For a GaN-air interface the critical angle is only 21°, 24° and 25° at the wavelengths of 365, 450 and 520 nm, respectively.
Gallium Nitride LEDs have been demonstrated previously and are commercially available. LED structures can be top emitting or can emit through a transparent substrate or have the substrate removed to emit at the semiconductor interface. Most commercially available LEDs are planar structures. Previous near parabolic structures in Gallium Arsenide are well-known and have been reported with a flat top to the structure but within a limited parameter space (e.g. U.S. Pat. No. 7,518,149 B2, which is incorporated herein by reference). Use of sloped sidewalls of micro-LED devices for improved manufacturing and increased light extraction has been demonstrated by the University of Strathclyde (e.g. U.S. Pat. No. 7,598,149 B2, which is incorporated herein by reference).
However, prior art devices have a number of limitations. Prior art involving the etching of parabolic shaped structures on micro-LED devices has been demonstrated in a configuration applicable to a Gallium Arsenide structure. For Gallium Nitride devices, the quantum well is typically only −0.3 to 0.5 microns below the top surface. In this configuration a flat truncated top would result in a small useable active area for optimal light extraction and consequently the need to manufacture a very small light emitting volume in comparison to that of the overall structure. There are practical limitations to the mesa height for such structures and consequently the fill-factor for the active region becomes negligible to enable efficient extraction. Integrating a hybrid shaped transparent structure on the top of the device can resolve these issues and provide further flexibility as a parabolic design may not necessarily be the optimum shape.
It is an object of at least one aspect of the present invention to obviate or mitigate at least one or more of the aforementioned problems.
It is a further object of at least one aspect of the present invention to provide improved LEDs and micro-LEDs with improved light extraction.
It is a further object of at least one aspect of the present invention to provide an improved method for manufacturing LEDs and micro-LED arrays with improved light extraction.
It is a further object of at least one aspect of the present invention to provide an improved method for providing a pattern programmable micro-display.
According to a first aspect of the present invention there is provided a light emitting structure comprising:
The present invention therefore resides in the provision of increasing and improving the amount of radiation that can be extracted and used from the light emitting structure.
The light emitting structure may comprise a side wall which may be inclined to enhance light extraction.
The light emitting structure may also incorporate a textured surface to enhance light extraction.
The light emitting structure may be an LED e.g. a micro-LED.
The light emitter may be any device capable of emitting radiation. Preferably, the light emitter may be a quantum well structure. The quantum well region may be about 10-100 nm thick and typically about 30 nm thick. In particular embodiments, the quantum well region may be made from InGaN/GaN.
The electromagnetic radiation emitted from the light emitter may be visible and may have, but is not restricted to a wavelength of about 300-700 nm.
The integrated transparent conductive cap layer may be dome shaped in cross-section in either one or two dimensions and may be formed with the rest of the LED structure during fabrication. The dome-cross-sectioned cap may therefore form a transparent area on top of the light emitting structure e.g. LED. The cap may be formed from a transparent conductive layer such as, but not limited to Indium Tin Oxide (ITO) or doped conductive Zinc-Oxide such as aluminium doped zinc oxide (AZO).
The integrated transparent conductive layer (e.g. transparent cap) may be an integral part of the structure and forms part of the ohmic contact to the device anode.
The integrated transparent conductive layer (e.g. transparent cap) material may be chosen to have a suitable refractive index and thickness to reduce Fresnel reflections with, for example, the GaN interface.
The integrated transparent conductive layer (e.g. transparent cap) may be conical, domed or aspheric in cross-section in one or both directions. Preferably, the cap cross-section may be parabolic or elliptical in shape. Alternatively, the integrated transparent conductive layer (e.g. transparent cap) may have a micro Fresnel lens shape.
The integrated transparent conductive layer (e.g. transparent cap) may help shape current distribution in order to reduce surface recombination at the outer periphery of the quantum well
The light emitting structure may also comprise an integrated reflective surface located adjacent the transparent conductive layer which is capable of reflecting the visible radiation transmitted through the transparent conductive layer back into the light emitting structure.
The integrated reflective surface may comprise a metal contact layer that may also form part of a reflective second surface mirror structure in the light emitting structure.
The light emitting structure (e.g. LED structure) may comprise a single isolated P-N diode or may consist of multiple structures with a common p and/or n connection.
The light emitting structure may also include side-walls coated in an electrically insulating layer, e.g. oxide covered side walls.
The integrated reflective surface (e.g. metal layer) may form part of an interconnect structure.
There may be a single LED or an array of LEDs or multiple LED emitter sites on one area.
In further embodiments a top emitting device may be formed where the transparent conductive layer (e.g. transparent cap) is transparent so that light emitted upwards is refracted in a manner that reduces the divergence of light so that it is focussed or collimated. In this embodiment the cap may be conductive and may form an ohmic contact to Gallium Nitride. In this embodiment, the cap may also be formed from transparent polymer or other transparent material in addition to the ohmic contact layer. In this embodiment the light emitting structure may comprise a reflecting shaped structure integrated on top of the light emitting structure e.g. an LED. Furthermore, the top-emitting device may be formed where the thickness of the transparent conductive layer adjacent to the shaped structure (e.g. spherical lens) is of sufficient thickness for providing electrical contact and designed to reduce Fresnel reflections (e.g. −X/4 anti-reflection layer). To enhance light extraction from the top emitting structure a reflective layer or layers is formed on the lower surface of the device e.g. transparent substrate so light is reflected back to the shaped conductive structures (ideally the incident light is then close to normal at the exit surface). The adjacent conductive layers are designed and fabricated to provide anti-reflection properties. The above combined with the relatively low absorption coefficient of the semiconductor e.g. GaN is designed to increase light extraction from the device.
The cap structure may be formed from a transparent polymer or a shaped oxide layer or transparent conductive layer. The cap structure may be conical in cross-section or shaped as a parabolic, aspheric or a Fresnel structure in one or both dimensions.
The cap structure may be formed on top of a conductive layer providing an ohmic contact to the device anode.
The conductive layer may be, but is not limited to indium tin oxide or a gold alloy. The cap structure may be bordered by a metal contact layer that may also form part of a reflective structure.
The metal layer may form part of an interconnect structure.
There may be a single LED or an array or LEDs or multiple LED emitter sites on one area.
In this embodiment an integrated shaped transparent conductive cap is formed on top of an LED in order to extend the light path above the light emitting area so that a larger number of rays are reflected from angled sidewalls which are preferably of high reflectance. Such a scheme can be designed to increase the number of rays to have incidence angles below the critical angle at the device interfaces, thus increasing light extraction. The formation of the shaped transparent conductive cap with high reflectance surface will result in a shape suitable to guide the light in a controlled manner; this shape may be conical, parabolic, elliptical or spherical in cross-section. The conductive cap with reflecting surface may also take the shape of a mirrored Fresnel structure. In a preferred embodiment the cross-sectional shape is parabolic in nature so that the light is near collimated, or any other shape that is appropriate. The sidewall angle of the emitter and the aspect ratio of the emitter diameter to overall mesa structure height are also considered.
In a further alternative embodiment the light emitter in the form of a quantum well area may be reduced to improve confinement of the light emission area to the centre of a pixel allowing more effective beam extraction from the shaped pixel reflector. For a parabolic shape the light will be near collimated. In this form, a p-GaN region and quantum well may be selectively exposed to a plasma treatment. This has the effect of stopping light emission from the treated area i.e. reducing the size of the active layer such that the light generated is close to the middle area of the active area. For the parabolic cross-section reflector this would coincide with the focal point. In this embodiment the application of the reduced quantum well area may be utilised with a conventional ‘flat’ topped structure as long as the sidewalls are sloped, but preferably should be used with a cap structure.
In a further embodiment the light emitting face may be modified to enhance light extraction. In one approach the sapphire surface may be textured by etching to form a roughened or a nano-textured surface which may for example involve pattern transfer of nano spheres or the formation of 2D photonic crystal structures.
In a second approach the sapphire carrier may be removed by laser lift off exposing the GaN buffer layer, this enables the GaN layer to be structured by etching where it may be patterned to form refractive, diffractive, Fresnel or 2D photonic crystal structures. It is also possible that the carrier may be silicon (GaN on silicon). Techniques may be employed to remove the silicon from the required areas.
In a third approach the GaN buffer layer may be removed by etching thus exposing the n-GaN layer. Deposition of a transparent conductive layer such as Indium Tin Oxide (ITO) provides a conductive layer allowing the device to act as a vertical LED. In this form the ITO layer may be patterned to form refractive, diffractive, Fresnel or 2D photonic crystal structures. The refractive index of the transparent conductive layer should be chosen to minimise reflection at the GaN interface.
According to a second aspect of the present invention there is provided a method of manufacturing a light emitting structure comprising:
The light emitting structure may be as defined in the first aspect and may, for example, be an LED.
The method of manufacturing the light emitting structure (e.g. LED) may comprise providing a transparent conductive oxide (TCO) layer, a GaN layer and a sapphire layer. The GaN layer may be coated with the TCO layer with, for example, a refractive index greater than 1.8, preferably greater than 2.0 and ideally matched to the semiconductor at the operating wavelength e.g. −2.4 for GaN at 450 nm.
A photoresist pattern may then be formed in in the areas to be defined as emitters by photolithography.
The photoresist pattern may then be baked to allow it to reflow into a rounded form.
The photoresist pattern may then be transferred by a dry etch technique such as inductively coupled plasma etch (ICP) or Reactive Ion Etching (RIE) into the TCO layer and then into the GaN layer. The photoresist pattern layer may be sacrificial and erodes during the etch process.
The light emitter structure may then be covered with a thin insulating layer such as silicon dioxide or silicon nitride.
The insulating layer on top of the TCO lens may then be uncovered to enable the p-contact to be formed.
Interconnect metal is deposited. This may also act as a mirror to reflect light downwards in a back emitting device.
Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying drawings in which:
Generally speaking, the present invention resides in the provision of using a transparent (e.g. visible light transparent) conductive cap structure on top of a light emitting diode to improve light extraction and the amount of light emitted.
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There is also shown side wall oxides 1012 and light rays 1014, 1016. The light emitting structure 1000 as before also has a quantum well area 1018. The light generated in the quantum well area 1018 is typically less than 0.5 micron from the GaN surface. The layer thickness of the transparent conductive layer 1010 is determined by the wavelength with the thickness being chosen to reduce reflection. An optional mirror as shown at the bottom of the light emitting structure 1000 shown in
Whilst specific embodiments of the present invention have been described above, it will be appreciated that departures from the described embodiments may still fall within the scope of the present invention. For example, any suitable type of integrated transparent conductive layer and transparent conductive layer (e.g. transparent cap) may be used.
| Number | Date | Country | Kind |
|---|---|---|---|
| 1202222.4 | Feb 2012 | GB | national |
This application is a continuation of U.S. application Ser. No. 15/351,243, filed Nov. 14, 2016, which is a continuation of U.S. application Ser. No. 14/377,804, filed Aug. 8, 2014, now U.S. Pat. No. 9,559,250, which is a National Phase application of International Application No. PCT/GB2013/050305, filed Feb. 11, 2013, which claims the benefit of United Kingdom Application No. 1202222.4, filed Feb. 9, 2012, each incorporated by reference in its entirety.
| Number | Date | Country | |
|---|---|---|---|
| Parent | 15351243 | Nov 2016 | US |
| Child | 15847760 | US | |
| Parent | 14377804 | Aug 2014 | US |
| Child | 15351243 | US |
