Claims
- 1. A method for epitaxially-growing a backward diode including the steps of:
growing an n-side including at least one n-doped layer; growing a thin, heavily n-doped layer on the n-side; and growing a p-side opposite the n-side on the thin, heavily n-doped layer, said p-side including at least one p-doped layer.
- 2. A method for epitaxially-growing a backward diode as set forth in claim 1, wherein the at least one n-doped layer, the thin, heavily n-doped layer, and the at least one p-doped layer are grown of a semiconductor material.
- 3. A method for epitaxially-growing a backward diode as set forth in claim 1 further including the step of:
forming electrical contacts on the n-side and p side.
- 4. A method for epitaxially-growing a backward diode as set forth in claim 2, wherein the semiconductor material is InGaAs.
- 5. A method for epitaxially-growing a backward diode as set forth in claim 3, wherein the step b of growing a thin, heavily n-doped layer on the n-side includes the following steps:
growing a thin layer on the n-side to a depth of approximately between 25 and 200 Å; and doping the thin layer on the n-side to a concentration approximately between 3×1018 and 3×1019/cm3 such that the doping concentration of the thin layer is greater than that of the most proximate one of the at least one n-doped layer of the n-side.
- 6. An epitaxially-grown backward diode fabricated according to the method of claim 1.
- 7. An epitaxially-grown backward diode fabricated according to the method of claim 2.
- 8. An epitaxially-grown backward diode fabricated according to the method of claim 3.
- 9. An epitaxially-grown backward diode fabricated according to the method of claim 4.
PRIORITY CLAIM
[0001] This divisional application claims the benefit of priority to U.S. ultity application Ser. No. 09/398,393, now U.S. Pat. No. 6,507,043, filed in the United States on Sep. 17, 1999, issued on Jan. 14, 2003, and titled “Epatially-Grown Backward Diode”.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09398393 |
Sep 1999 |
US |
Child |
10339174 |
Jan 2003 |
US |