C.A. Burrus, Jr., Backward Diodes for Low-Level Millimeter-Wave Detection, IEEE Transactions on microwave theory and techniques, p. 357, Sep. 1963. |
B.Su, V.J. Goldman, and J.E. Cunningham, “Single-electron tunneling in nanometer-scale double-barrier heterostructure devices,” Physical Review B, vol. 46, No. 12, Sep. 15, 1992. |
K. Nomoto, K. Taira, T. Suzuki, I. Hase, H. Hiroshima, and M. Komuro, “Diameter dependence of current-voltage characteristics of ultrasmall area AISb-InAs resonant tunneling diodes with diameters down to nm,” Appl. Phys. Lett. 70(15), Apr. 14, 1997. |
T. Schmidt, M. Tewardt, R.J. Haug, K.V. Klitzing, B. Schonherr, P. Grambow, A. Forster, and H. Luth, “Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries,” Appl. Phys. Lett. 68(6), Feb. 5, 1996. |
M. Reddy, M.J. Muller, M.J.W. Rodwell, S.C. Martin, R.E. Muller, R.P. Smith, D.H. Chow, and J.N. Schulman, “Fabrication and dc, microwave characteristics of submicron Schottky-collector AlAs/In0.53GaGa0.47As/InP resonant tunneling diodes,” J. Appl. Phys. 77(9), May 1, 1995. |
T.A. Richard, E.I. Chen, A.R. Sugg, G.E. Hofler, and N. Holonyak, Jr., “High Current Density Carbon-doped Strained-layer GaAs (p+)-InGaAs(n+)p-n Tunnel Diodes”, Appl. Phys. Lett. 63(26), Dec. 27, 1993. |
W.L. Chen, G.O. Munns, X. Wang, AndG.I. Haddad, Proceedings IEEE Cornell Converence, p. 465, Aug. 1995. |