Patent Application
20150123033
Embodiments of the present invention are directed to europium-activated green emitting phosphors having a β-SiAlON structure.
There is a need in the field(s) of optical engineering for red, green, and blue lighting systems in various devices, applications, and technologies. Among these technologies are backlighting sources for display systems, such as plasma displays, and white light sources in general lighting.
What is needed in the art in particular are green-emitting phosphors in various applications, including red, green, and blue (RGB) lighting systems, backlighting displays and warm white-light applications. In these applications it is desirable to have green-emitting phosphors that show high luminous flux and brightness. The present disclosure describes improvements in green-emitting phosphor based on a β-Si3N4 structure activated with divalent europium.
Embodiments of the present invention are directed to new green phosphors based on (β-SiAlON is presented, the new phosphor having the formula Eux(A1)6−z(A2)zOyN8−z(A3)2(x+z−y), where the values of the parameters x, y, and z have the following relationships:
The new set of compounds described by Eux(A1)6−z(A2)zOyN8−z(A3)2(x+z−y) have substantially the same structure as β-Si3N4, as will be demonstrated shortly with x-ray diffraction data. Both elements A1 and A2 may reside on Si sites, and both O and N may occupy the nitrogen sites of the ⊕-Si3N4 crystal structure. The Eu2+ activator atoms are considered to exist in a continuous atomic line parallel to the c-axis at the origin, A stoichiometric quantity (z−y) of the A3− anion (defined as a halogen) will also reside on an N site, and the remaining (2x+z−y) moles of A3− may exist continuously, atomically parallel to the c-axis at the origin just like Eu2+.
Green-emitted oxynitride and nitride-based phosphors has been reviewed by R-J Xie et al. in “Silicon-based oxynitride and nitride phosphors for white LEDs—a review,” published in Science and Technology of Advanced Materials 8 (2007), pp. 588-600. These authors report that generally speaking, nitrides as phosphors are nitrogen-containing compounds that are formed by combining nitrogen with less electronegative elements, and as in many areas of materials science where a series of compounds is investigated, the nature of the bonding of the nitrogen to its less-electronegative neighbors varies anywhere from a metallic, to an ionic, to a covalent type of bond. Covalent nitrides such as silicon nitride Si3N4, a compound upon which the present phosphors are based, are generally formed by combining nitrogen with IIIB-VB group metals.
R.-J. Xie et al. report in their review an article by Hirosaki et al., Appl. Phys. Lett 86 (2005) 211905, which finds that green oxynitride phosphors based on Eu2+ doped β-SiAlON are highly suitable for use in white LEDs. This compound is structurally derived from β-Si3N4 by the equivalent substitution Al—O for Si—N, and its chemical composition may be written as Si6−zAlzOzN8−z, where “z” represents the number of Al—O pairs substituting for Si—N pairs. Hirosaki et al, report that these Al—O pair substitutions, z, should be greater than zero and less than or equal to 4.2; that is to say in mathematical terms, 0<z≦4.2.
The crystal structure of β-SiAlON is hexagonal, having either the P63 or P63/m space group. This determination was made by Y. Oyama et al. in Jpn. J. Appl. Phys. 10 (1971) 1673, and K. H. Jack et al. in Nat. Phys. Sci, 238 (1972) 28 (again, as reported by R.-J. Xie et al. in their review article). The structure is described as continuous channels parallel to the c direction. Optically, β-SiAlON:Eu2+ produces a green emission with a peak located at 538 nm; the overall emission spectrum displaying a full-width at half-maximum of 55 nm. This photoluminescence is the result of two broad bands in the excitation spectrum centered at 303 and 400 nm. This broad excitation enables β-SiAlON:Eu2+ to emit green light as a result of being excited by either near UV light having a wavelength range of about 400-420 nm, or by blue light having a wavelength range of about 420 to 470 nm.
R.-J. Xie investigated the effects that the amount of Al—O substitution for Si—N pairs (the z-value alluded to above), and the effects of the level of Eu2+ activator concentration on phase formation and luminescent properties of β-SiAlON:Eu2+ phosphors. They found that samples with lower amounts of Al—O substitution (z<1.0) displayed “higher” phase purity, smaller and more uniform particle sizes, and greater amounts of photoluminescence. See R.-J. Xie et al., J. Electrochem. Soc. 154 (2007) J314. In addition to these properties the β-SiAlON:Eu2+ phosphor exhibited “low” thermal quenching; its emission intensity at 150° C. was 86% of that measured at room temperature.
The present green phosphors, based on β-SiAlON (Si6−zAlzOzN8−z), also have a hexagonal crystal structure derived from β-Si3N4 by equivalent substitution of Al—O for Si—N. Like the Eu2+ activated β-SiAlON described above, the present phosphors have been developed with promising results. They may be efficiently excited from 250 nm to 500 nm and emit very strong green light with emission peak wavelength at about 530 nm to 550 nm. They too have low thermal quenching, and a high stability of chromaticity against temperature, as well as a desirable lifetime stability when compared to Eu2+ activated orthosilicates. And, like the β-SiAlON:Eu 2+ compounds alluded to above, the present phosphors are excellent choices for white LED applications.
The present green phosphors based on β-SiAlON make use of elemental substitutions not previously anticipated. In these Eu2+ activated β-SiAlON compounds, the dopant Eu atoms are believed to be positioned in continuous, atomic lines parallel to the c-axis; this is because the Eu2+ ion is too large to reside Si or Al sites. When a β-SiAlON is doped with divalent Eu2+, there will be a charge unbalance if there is no anion to compensate for the europium cation. According to one embodiment of the present invention, a monovalent anion such as a halogen may be used to charge compensate for a divalent europium activator. Thus, F− may be used as a compensation anion to balance charge unbalance caused by Eu2+ doping. It is contemplated that, for example, one atom of F− may reside substitutionally on one O2− site, while the remaining F− necessary for charge compensation may be positioned in the continuous atomic line parallel to the c-axis, at the origin, just like Eu2+.
In accordance with the above theory, an inventive new green phosphor based on β-SiAlON is presented, the new phosphor having the formula Eux(A1)6−z(A2)zOyN8−z,(A3)2(x+z−y), where the values of the parameters x, y, and z have the following relationships:
The new set of compounds described by Eux(A1)6−z(A2)zOyN8−z(A3)2(x+z−y) have the same structure as β-Si3N4, as will be demonstrated shortly with x-ray diffraction data. Both elements A1 and A2 reside on Si sites, and both O and N occupy the nitrogen sites of the β-Si3N4 crystal structure. Eu2+ are considered to exist in a continuous atomic line parallel to the c-axis at the origin. A molar quantity (z−y) of the A3− anion (defined as a halogen) will also reside on an N site, and the remaining (2x+z−y) moles of A3− may exist continuously, atomically parallel to the c-axis at the origin just like Eu2+.
The crystal structure and morphology of prepared samples were investigated by x-ray diffractometry, with an Rigaku MiniFlex instrument, using Cu Kα radiation as the source of the x-rays, and a JEOL JSM-6330F field emission scanning electron microscope for determining morphology.
When used in white LEDs, green-emitting phosphors receive excitation radiation from an ultraviolet, near ultraviolet, or blue emitting LED to cause the phosphor to photoluminescence. The excitation spectra of the present samples were measured using a Fluorolog3 Research Spectrofluorometer (Horiba Jobin YVON) using a xenon arc lamp as an excitation source.
The crystal structure and morphology of prepared samples were investigated by x-ray diffractometry, with an Rigaku MiniFlex instrument, using Cu Kα radiation as the source of the x-rays, and a JEOL JSM-6330F field emission scanning electron microscope for determining morphology.
The PL spectra of the prepared samples were measured using an Ocean Optics USB2000 spectrometer excited by a 450 nm LED. Exemplary emission spectra from the present β-SiAlON based green phosphor compounds are presented in
Appropriate amounts of certain starting raw materials were weighed out and mixed well by either dry ball milling or wet ball milling. The powder mixture was then packed into BN crucibles and sintered in a gas pressure furnace with a graphite heater. The samples were heated at a constant heating rate of 10° C./min under 10−2 Pa, in vacuum, first from room temperature to 600° C., and then to 800° C. When heating between the 600° C. to 800° C. temperatures, high purity N2 gas was introduced into the chamber to increase the gas pressure from 0.5 MPa to 1.0 MPa. Simultaneously, the temperature was raised from 1900° C. to 2000° C., utilizing the same heating rate of 10° C./min. The samples were maintained at a temperature of 1900° C. to 2000° C. for 2 to 8 hours under a N2 gas pressure of 0.5 MPa to 1.0 MPa. After firing, the power was shut off, and the samples were allowed to cool in the furnace.
The present application is a continuation of U.S. patent application Ser. No. 13/210,667 entitled “Europium activated beta Si3N4 structure green phosphor,” filed Aug. 16, 2011, which claims priority to U.S. Provisional Patent Application Ser. No. 61/374,383 entitled “Europium activated beta Si3N4 structure green phosphor,” filed Aug. 17, 2010 by Yi-Qun Li et al., which applications is are incorporated herein by reference in their entirety.
| Number | Date | Country | |
|---|---|---|---|
| 61374383 | Aug 2010 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 13210667 | Aug 2011 | US |
| Child | 14508660 | US |
