The invention generally relates to thin-film forming apparatuses and crucibles used in apparatuses for thin film forming. Particularly, it relates to crucibles for evaporation of alloys or metals. Specifically it relates to an evaporation crucible and to an evaporation apparatus.
For thin-film coating of a material on a substrate, an evaporator can be used. For example, coatings with metal films, which e.g. provide a capacitor of a large panel display or a protective layer on a web, can be applied with evaporators. Specifically, for large panel displays, a substrate, which can be provided as a large and relatively thin glass plate, might be vertically positioned in a coating process and coated with a vertical evaporator.
Particularly for vertical evaporation, a source for a material vapor to be deposited on a substrate is commonly provided with a vertical nozzle pipe, which defines a linear vertically extending source for coating a virtually aligned substrate.
The linear sources provided thereby have a high complexity and are expensive to manufacture and to maintain. Additionally, the vertically extending nozzle pipe provides a substantial thermal irradiation towards the substrate.
Additionally, different temperature areas, which have been suggested for evaporation crucibles, can have an insufficient stability because the material to be evaporated can migrate in various areas of a crucible and can also dissolve portions of the crucible, whereby a temperature customization can be deteriorated.
In light of the above, the present invention provides an evaporation crucible according to independent claims 1 and 3, and an evaporation apparatus according to claim 19.
According to one embodiment, an evaporation crucible is provided. The evaporation crucible includes: an electrically conductive body and a cover; the body having a first electrical connection and a second electrical connection for applying a heating current through the body, the body includes a chamber providing a melting-evaporation area, the chamber including a chamber bottom and a chamber wall, wherein the cover forms an enclosure with the chamber. The evaporation crucible further includes: a feeding opening for feeding a material; and a distributor orifice providing a vapor outlet of the enclosure.
According to another embodiment, an evaporation crucible is provided. The evaporation crucible includes: an electrically conductive body having a first electrical connection and a second electrical connection for applying a heating current through the body, the body includes a chamber providing a melting-evaporation area, the chamber including a chamber bottom and a chamber wall. The evaporation crucible further includes: a first and a second heating portion provided adjacent to the chamber and between the chamber and the first and second electrical connection, respectively; and a feeding opening for feeding a material.
According to a further embodiment, an evaporation apparatus including at least one evaporation crucible is provided. The evaporation crucible includes: an electrically conductive body and a cover; the body having a first electrical connection and a second electrical connection for applying a heating current through the body, the body includes a chamber providing a melting-evaporation area, the chamber including a chamber bottom and a chamber wall, wherein the cover forms an enclosure with the chamber. The evaporation crucible further includes: a feeding opening for feeding a material; and a distributor orifice providing a vapor outlet of the enclosure.
Further advantages, features, aspects and details that can be combined with the above embodiments are evident from the dependent claims, the description and the drawings.
Embodiments are also directed to apparatuses for carrying out the disclosed methods and including apparatus parts for performing the described method steps. These method steps may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments are also directed to methods by which the described apparatus operates or by which the described apparatus is manufactured. It includes method steps for carrying out functions of the apparatus or manufacturing parts of the apparatus.
Some of the above indicated and other more detailed aspects of the invention will be described in the following description and partially illustrated with reference to the figures. Therein:
a shows a schematic view of the body of an evaporation crucible including a pot-shaped chamber according to embodiments described herein; and
b shows a further schematic view of the evaporation crucible of
a shows a schematic side view of an even further evaporation crucible including the body and a feeding opening according to embodiments described herein;
b shows a schematic top view of the evaporation crucible shown in
Without limiting the scope of the present application, in the following aluminum is mainly described as a material to be deposited on a substrate. The invention is also directed to metals, alloys or other materials to be evaporated and, e.g., used for the coating of a substrate. Further, without limiting the scope of the present invention, a substrate is typically referred to as a glass substrate as often used for display technology, e.g., TFT displays. Embodiments of the present invention can be applied to thin-film vapor deposition on other substrates and for other technologies.
Within the following description of the drawings, the same reference numbers refer to the same components. Generally, only the differences with respect to the individual embodiments are described.
a shows the body 120 of an evaporation crucible 100. The body 120 includes a first electrical connection 162 and a second electrical connection 164. Between the two electrical connections a chamber 130 is provided. According to one embodiment, the chamber 130 is pot-shaped and can, for example, have a substantially cylindrical form including chamber wall 132.
The chamber further includes a chamber bottom (not shown). Further, different body regions 122 and 124 can be provided between chamber 130 and the electrical connections, through which a current is provided for heating the evaporation crucible.
The regions, which will be described in more detail with respect to
The material to be deposited is melted and evaporated by heating the evaporator crucible 100. Heating can be conducted by providing a power source (not shown) connected to the first electrical connection 162 and the second electrical connection 164. Thereby, heating is conducted by the current flowing through the body 120 of the crucible 100. Generally, within the regions having a smaller cross-sectional area, the resistance of the body is increased. Thereby, the heating power can be calculated according to equation P=R I2, wherein P is the power, R is the resistance and I is the current. As a result of the proportion between the resistance and the cross-sectional area, the temperature is increased in regions having a smaller cross-sectional area. Thus, it is possible to control the resistances of the different areas of the crucible such that desired temperatures are provided in the different areas. For example, the temperature in the melting-evaporation area in the chamber 130 can be in the range of 700° C. to 1600° C. or 1300° C.-1600° C.
According to further embodiments, the resistance of different areas of the evaporator crucible 100 can further be controlled by changing the material composition of the evaporator crucible body 120.
Generally, according to embodiments described herein, the materials of the crucible should be conductive, temperature resistant to the temperatures used for melting and evaporating the materials, and should be resistant with regard to the liquid materials or the material vapor, respectively. For example, liquid aluminum is highly reactive and can provide significant damage to crucibles for melting aluminum. According thereto, typically, materials selected from the group consisting of a metallic boride, a metallic nitride, a metallic carbide, a non-metallic boride, a non-metallic nitride, a non-metallic carbide, nitrides, borides, graphite, and combinations thereof can be used (e.g., TiB2, a combination of TiB2 and AlN, a combination of TiB2 and BN, or a combination of TiB2, BN and AlN).
The difference in electrical resistivity of these materials can be used to further adapt the heat generation in the crucible. Thereby, the material composition in the different regions of the body can be chosen to have a corresponding resistivity depending on the desired heat generation in the respective regions.
In
According to further embodiments, which can be yielded by a combination with any of the embodiments described herein, a feeding of the material can be provided by a wire. Additionally or alternatively, the material can be fed in the evaporation crucible by pellets or the like.
According to even further embodiments (not shown), the opening 134 feeding the wire of the material to be evaporated and deposited on a substrate, may also be provided in the cover 150. The cover 150, which is shown in
According to embodiments described herein, the melting-evaporation area is closed to a maximum degree. Thus, the amount of vapor leaving the chamber in an undesired direction (e.g., in direction of the opening for feeding the material) can be minimized.
As an example, the temperature in the melting-heating area of the chamber 130 is above the evaporation temperature of the material to be deposited. However, a wire provided for feeding the material results in a local decrease in the temperature in a small portion of the melting-evaporation area. According to further embodiments, the temperature is at least 200° C. above the evaporation temperature, e.g., 200° C. to 900° C. or 600° C. to 870° C. above the evaporation temperature. For example, for aluminum, the temperature can be above 900° C. or above 1150° C.
Typically, a lower limit of the temperature depends on the melting temperature of the material to be deposited and the chamber pressure. Typically, an upper limit of the temperature can be given by the temperature stability of the evaporation crucible.
As shown in
Vapor deposition of thin films may, for example, be applied for organic light emitted diodes (OLED), for other display devices (e.g. TFT), or generally for thin-film coating on glass substrates or foils. As an example, thin metal films are provided for display applications in order to control individual pixels of a display.
Typically, for applications providing a vapor deposition for vertically arranged substrates, a linear evaporator unit with a nozzle pipe, which redirects vapor emitted by an evaporation area of an elongated crucible, can be used. Thereby, the vertically arranged substrate can be transported past the linear evaporation apparatus in a horizontal direction for thin film coating of the substrate. However, the nozzle pipe for redirecting the material vapor along horizontal evaporation axes and the commonly used crucibles are complex and difficult to maintain. Since vertical substrate arrangement is desired in light of particle contamination and bending of the substrates, it is desirable to have simplified evaporation sources for vertical evaporation applications. Embodiments of evaporation crucibles described herein can be used as a point source for a vertical evaporation apparatus.
As a further example, the embodiments described herein can be utilized for the coating of substrates for display technology or the like. Thereby, substrate size may be as follows. A typical glass substrate and, thereby, also a coating area can have dimensions of about 0.7 mm×370 mm×470 mm. Yet, next generation substrates can have a size of about 1100 mm×1300 mm or larger. For example, applications described herein refer typically to large substrates. Thereby, a large substrate can have a height and length of 500 mm or above. This can typically be 680 mm×880 mm, 1100 mm×1300 mm or larger in the case of glass substrates. Typical large flexible substrates, e.g., foils, can have a width of at least 500 mm.
According to the embodiments described with respect to
Within the chamber, the material is melted and upon further heating evaporated in the melting-evaporation area. The material vapor leaves the chamber through distributor orifice 170 and can thereafter be deposited on a substrate. The distributor orifice includes an evaporation axis, which is defined by the direction of the opening or the bore in the enclosure. For example, if a horizontal bore is provided in the wall of a pot-shaped chamber—the bore defining the distributor orifice—a horizontal evaporation axis is provided.
According to even further embodiments, which might be combined with other embodiments herein, a distributor orifice can be provided with a channel length of 2 to 10 mm along the evaporation axis. According to even further embodiments, the diameter of the orifice is in the range of 3 to 20 mm.
As describe above, the chamber can be pot-shaped. According to further embodiments, the chamber has substantially the same dimension along axis 2 and an axis perpendicular thereto and/or the same dimensions along two perpendicular directions along the bottom of the chamber, a dimension can, according to even further embodiments, be in the range of 20 mm to 150 mm or typically 30 mm to 50 mm. According to another embodiment, the height can be in the range of 20 mm to 50 mm or typically 25 mm to 40 mm. According to yet further embodiments, the chamber is a circular or elliptical cylinder. This shape can provide an improved stability and/or volume-surface ratio.
According to embodiments described herein, the melting-evaporation area is to be understood as an area in which the material to be evaporated is melted and evaporated. Thereby, a one chamber system with similar pressure conditions within the chamber can be provided. Additionally or alternatively, other separation means for separating a melting area and an evaporation area within the chamber might, according to embodiments described herein, be omitted. Accordingly, problems with migration of the very thin liquid material films or problems with a timely variation of customized temperature profiles in light of dissolving of portions of the evaporation crucible can be prevented.
According to embodiments described herein, the melting zone (e.g., a surface) of the melting evaporation area is within the evaporation zone.
A melting zone within the evaporation zone can e.g., be understood as having a reduced gas pressure region within the evaporation zone, for example in the range of 10% or 20%, in the melting-evaporation-area.
A melting zone within the evaporation zone can, as another example, be understood as having the melting zone (e.g., a surface) within the main evaporation zone, that is, for example, the zone in which at least 50% or 75% of the evaporation is conducted.
Thereby, the possibility of a splashboard, a faceplate for controlling splashing or the like does not affect the functionality of the melting-evaporation area.
The evaporation crucible 100 includes a body 120 and a cover 150. If the material, for example aluminum, is provided by continuously feeding the material to be deposited with a feeding wire 102, an equilibrium can be maintained such that the amount of material in the system is substantially constant. Thereby, the amount of material inserted in the system is provided by the diameter and the feeding speed of the feeding wire 102. In order to provide an equilibrium, the amount of material which is evaporated from the evaporator crucible 100, and the amount of material fed in the system should be similar.
As shown in
According to one embodiment, the cover 150 can be made of the non-conductive material. Thereby, it may include BN, or the like. A non-conductive cover is passively heated by the adjacent portion of the body.
In light of the size of the chamber 130 and the heating portions 124 of the body 120 (see, e.g.,
According to embodiments described herein, the shape of the body of an evaporation crucible can be designed to have different cross-sections as shown in
A heating of the chamber 130 mainly along the entire height of the chamber reduces temperature gradients that may result in cracking of the evaporation crucible. Further, the cover provided on the top portion of the chamber can be heated to substantially the same temperature as the chamber itself. Thereby, condensation and resulting migration of resulting liquid material can be prevented.
The cross-section of the chamber 130 including the chamber wall 132 and the chamber bottom 133 is shown in
The heating portions on both sides and adjacent to the chamber provide an improved symmetric heating as compared to only locally heating the chamber. By providing a heat generation in the chamber that is not extensive as compared to the heat generation in the adjacent heating portions 124 results in a more homogeneous temperature within the chamber and, thereby, the melting-evaporation area.
Additionally, according to further embodiments described herein, the electrical connections 162, the region 122 and the region 124 together, have a length in the range of 80 mm to 220 mm. Thereby, a transition from comparably cold regions at the electrical connections to the comparable high temperature regions in and adjacent to the chamber can be provided.
According to different embodiments that might be combined with any of the embodiments described herein, the electrical connections may be provided at the body by protrusions of the main body. Thereby, the protrusions can be formed to be contacted by contact elements of the evaporation apparatus. Additionally, the contact elements of the evaporation apparatus can be cooled. Generally, the electrical contacts are provided for applying a heating current through the body. The current is thereby applied by a power source of the evaporation apparatus.
A further evaporation crucible 300, which can also be used as a point source for vertical evaporation apparatuses, is shown in
According to one embodiment, which can be combined with the bushing or which can be provided separately, the opening in the chamber wall 132 is inclined with respect to the chamber wall. Thereby, the wire can be inserted towards the bottom of the chamber. According to an even further embodiment, the opening in the chamber wall is provided with a chamfered edge. As shown in
a and 4b show the body 120 of crucible 400. The material wire for feeding the material to be evaporated can be provided at or close to axis 2. The body 120 includes chamber 130 having a chamber wall 132 and a chamber bottom 133. As indicated in
According to the embodiments described herein, the distributor orifice 170 provided in the wall of the chamber 130 provides a vapor orifice with a directional evaporation axis. The distributor orifice includes an evaporation axis, which is defined by the by the direction of the opening or the bore in the enclosure. For example, if a horizontal bore is provided in the wall of a pot-shaped chamber—the bore defining the distributor orifice—a horizontal evaporation axis is provided.
Thereby, an evaporation distribution is provided by the distributor orifice. The distribution of evaporation can be defined by the bore or the opening in the chamber. Accordingly, the distribution can be adapted by the shape, the diameter, and by the length of the distributor orifice. For example, the wall thickness can define a length of the distributor orifice along the directional evaporation axis of the orifice. According to different embodiments, the shape of the distributor orifice can be round, oval, elliptical, angular, cylindrical, slit shaped, or formed in another way. According to yet another embodiment, which might be combined therewith, the direction of the evaporation axis can be horizontal or inclined with respect to the chamber wall surface. Further, it is additionally or alternatively possible to have the edges of the bore chamfered. According to yet further embodiments, as for example shown in
According to even further embodiments, which might be combined with other embodiments herein, a distributor orifice can be provided with a channel length of 2 to 10 mm along the evaporation axis. According to even further embodiments, the diameter of the orifice is in the range of 3 to 20 mm.
Components of an evaporation apparatus having a plurality of vertically arranged evaporation crucibles 100 is shown in
According to embodiments described herein, a method of evaporating a material includes: providing a chamber with a melting-evaporation area, and inserting a solid material to be evaporated in the melting-evaporation area.
In
Typically, the evaporation crucibles 100 are arranged such that the vapor distributions of the individual crucibles overlap such that a substantially homogenous vapor deposition on the substrate 10 is provided. According to one embodiment, the shape of the distributor orifices may be optimized for the combined vapor distribution of neighboring evaporation crucibles. As shown in
A further evaporation apparatus that can be realized with an evaporation crucible 400 according to embodiments described herein is shown in
While the foregoing is directed to embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Number | Date | Country | Kind |
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07004794.9 | Mar 2007 | EP | regional |
This application claims benefit of U.S. provisional patent application Ser. No. 60/893,766 (ZIMR/0061L), filed Mar. 8, 2007, which is incorporated herein by reference.
Number | Date | Country | |
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20080226271 A1 | Sep 2008 | US |
Number | Date | Country | |
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60893766 | Mar 2007 | US |