Exciton polariton optical interconnect

Abstract

An electro-optical converter that converts an electric signal to an optical signal. An optical signal is dragged from one optical channel to another optical channel using exciton polaritons that are generated in a layer that is adjacent the optical channels. The exciton polaritons are generated in response to an electrical signal which thereby results in the selective production of the optical signal.

Description

BACKGROUND OF THE INVENTION

A fully-functional quantum computer has the potential to be transformative by: 1) advancing the science of artificial intelligence, 2) stimulating advances in chemistry through creation of new materials and new drugs, and 3) revolutionizing the surveillance and secure transmission of information. With quantum simulations, it was discovered that the very fundamental laws of physics can be revisited; for example, the direction of time can be temporarily reversed. This means that one can return back to the past for a limited amount of time, although at a microscopic scale.

Early prototypes of quantum computers do exist but in their current form they do not outperform existing computers. Many companies around the world are investing in this technology but a fully functional quantum computer is still a decade away.

The key limitation of the current quantum computing technology is in the absence of scalability in quantum computers that is, the maximum achievable number of simultaneously connected qubits in quantum processors. Qubits are quantum bits, or electrical or optical pulses representing zero and/or one. Qubits have the flexibility of performing many calculations simultaneously. Currently, the maximum obtained number of qubits, 72 in a single computer, is not large enough to achieve required performance for commercial, financial, cybersecurity, or military applications. An improved system is therefore desired.

The discussion above is merely provided for general background information and is not intended to be used as an aid in determining the scope of the claimed subject matter.

SUMMARY

This disclosure provides an electro-optical converter that converts an electric signal to an optical signal. An optical signal is dragged from one optical channel to another optical channel using exciton polaritons that are generated in a layer that is adjacent the optical channels. The exciton polaritons are generated in response to an electrical signal which thereby results in the selective production of the optical signal.

This brief description of the invention is intended only to provide a brief overview of subject matter disclosed herein according to one or more illustrative embodiments, and does not serve as a guide to interpreting the claims or to define or limit the scope of the invention, which is defined only by the appended claims. This brief description is provided to introduce an illustrative selection of concepts in a simplified form that are further described below in the detailed description. This brief description is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter. The claimed subject matter is not limited to implementations that solve any or all disadvantages noted in the background.

BRIEF DESCRIPTION OF THE DRAWINGS

The patent or application file contains at least one drawing executed in color. Copies of this patent or patent application publication with color drawing(s) will be provided by the Office upon request and payment of the necessary fee.

So that the manner in which the features of the invention can be understood, a detailed description of the invention may be had by reference to certain embodiments, some of which are illustrated in the accompanying drawings. It is to be noted, however, that the drawings illustrate only certain embodiments of this invention and are therefore not to be considered limiting of its scope, for the scope of the invention encompasses other equally effective embodiments. The drawings are not necessarily to scale, emphasis generally being placed upon illustrating the features of certain embodiments of the invention. In the drawings, like numerals are used to indicate like parts throughout the various views. Thus, for further understanding of the invention, reference can be made to the following detailed description, read in connection with the drawings in which:

FIG. 1A is an exploded view of one electro-optical converter for use with the disclosed system;

FIG. 1B is a cross section side view of the electro-optical converter;

FIG. 2A is a cross section side view of the electro-optical converter showing cavity photons;

FIG. 2B is a photoluminescence (PL) spectrum of the electro-optical converter;

FIG. 2C is a graph depicting polariton energy for two polariton branches;

FIG. 3A is schematic depiction of an electro-optical converter that utilizes a heterogeneous bi-layer;

FIG. 3B is a photoluminescence (PL) spectrum of the electro-optical converter;

FIG. 3C is a graph showing dipolariton mutual interactions can be tuned by the dielectric environment;

FIG. 4A illustrates a single-layer TMX, wherein the exciton component of polaritons is entrained by the electric current running in the same or neighboring layer;

FIG. 4B illustrates a heterogeneous TMD (WSe₂/MoS₂) bi-layer, wherein the driving voltage is applied to MoS₂ layer and thus, creates the electric force on electrons e in the indirect exciton (IX) component;

FIG. 5 is a graph depicting channel potential U_conf(r) when confining the polariton flow in transverse y direction;

FIG. 6 is a graph of the potential U_w(r) wherein force is applied in an x-direction;

FIG. 7 (top view) is a schematic of an optical cavity that was used in simulations using the values depicted in Table 1;

FIG. 8A (top perspective view) and FIG. 8B (top view) is a graph depicting polariton density in the cavity after a pulsed drag force is applied;

FIG. 9 is a graph depicting polariton flux J at the cross-section x=x_d, as a function of time, when no drag force is applied to the system;

FIG. 10 is a graph showing polariton flux, J, at a cross-section x=x_d, as a function of time, after a drag force F_drag=13 meV/mm with the time duration τ=2×10³Δt was applied at t=1.3×10⁴Δt;

FIG. 11 is a graph showing the polariton flux, J, after two pulses of the pulsed drag force, with F_drag=13 meV/mm and the time duration τ=10³Δt each, were applied. The first pulse was applied at t=1.5×10⁴Δt and the second pulse was applied at t=2.0×10⁴Δt;

FIG. 12 is a graph showing the result of the simulation for the two pulses when the first pulse was applied at t=1.3×10⁴Δt and time between the drag pulses was 8.0×10³Δt; and

FIG. 13 is a graph showing an example for two overlapping polariton pulses for τ=10³Δt drag pulses separated by the time interval 10³Δt.

DETAILED DESCRIPTION OF THE INVENTION

A low temperature electro-optical converter (EOC) unlocks a number of applications of quantum computing, communication and sensing. The polariton-based low-temperature low-energy EOC converts qubit/quantum information into optical pulses and back. The technology enables quantum data transfer between quantum computers or devices and to/from classical computing systems.

FIG. 1A is an exploded view of an electro-optical converter (EOC) 100. During use, an input optical signal 102 enters the EOC 100 through an input waveguide (e.g. a continuous wave (cw) optical input waveguide). As the input optical signal 102 passes through an optical input channel 104a (e.g. a Si, plastic, or glass waveguide), the light is dragged in the direction of an applied pulsed electric signal 106 via polariton drag (from left to right in the figure) and finally, leaves an optical output channel 104b as an output optical signal 108 through a corresponding output waveguide. In the absence of the pulsed electric signal 106, light continues traveling through the optical input channel 104a. This results in the output optical signal 108 being selectively produced based on the presence of the electric signal 106. In this manner, the electric signal 106 is converted to the output optical signal 108.

In the embodiment of FIG. 1A, the optical channels 104a, 104b are embedded in a dielectric layer 110 which may be an inert material, such as SiO₂, air (for air-filled cavities), Nb₂O₅ or any other transparent material. The optical channels extend along a first longitudinal direction 130 The dielectric layer 110 is optically transparent to visible light. The dielectric layer 110 separates a first mirror 112 from a semiconducting layer 114 which has a first surface 114a and a second surface 114b, which is opposite the first surface. The first surface 114a is contiguous with the dielectric layer 110. In one embodiment, the semiconducting layer 114 is a TMX layer, wherein TM is a transition metal is W, Mo, In or Re and X is Se, Se₂ or S₂. In another embodiment, the semiconducting layer 114 is a semiconductor quantum well layer, such as GaAs/AlGaAs, ZnO, GaN, Cu₂O, or CuCl. The pulsed electric signal 106 applied to the semiconducting layer 114 is mixed with the input optical signal 102 due to strong coupling of cavity photons and semiconducting excitons then, propagates to the output channel 104b in a form of exciton polaritons that move in a second longitudinal direction 132 and finally, leaves the converter as optical pulses through the output optical signal 108. The second longitudinal direction 132 is perpendicular to the first longitudinal direction 130. In the absence of the electric signal 106, the input optical signal 102 leaves the optical channel 104a e and does not produce any optical output. The photon-exciton coupling strength can be maximized by setting the gate voltage and the inter-mirror distance to optimal values. The thickness of the semiconducting layer 114 can vary from a few angstroms (for monoatomic TMX layers) to 100 nm for semiconducting quantum well layers, such as GaAs/AlGaAs, ZnO, GaN, Cu₂O, or CuCl.

The pulsed electric signal 106 is passed through the semiconductor layer 114. The semiconductor layer 114 has input and output electrical terminals 118 on opposite edges of the semiconductor layer 114. A conductive layer 122 (e.g. graphene) may be present between the semiconductor layer 114 and the input and output terminals 118, respectively, to facilitate electrical contact. A gate 120 can be made of a layer of conducting material, such as graphene or gold, and is electrically separated from the semiconducting layer 114 by a thin dielectric layer 116 (e.g. a hexagonal boron nitride, h-BN, dielectric, or SiO₂) of thickness from a few angstroms (e.g. 2 angstroms) to a hundred nanometers. The gate 120 and input and output electrical terminals 118 may be disposed in a dielectric layer 124 of a dielectric material (e.g. SiO₂) such that a portion of the electrical terminals 118 extend outside of the dielectric layer 124. The total thickness of the cavity 134 (the sum of the thicknesses of the dielectric layer 110 and the dielectric layer 124 plus the thickness of the semiconducting layer 114) between the first mirror 112 and the second mirror 126 can vary from a fraction of a micron (e.g. 0.5 microns) to a few microns (e.g. 3 microns). FIG. 1B is a cross section side view of EOC 100. The optical channels 104a, 104b are separated by a gap 136 which is on the order of hundreds of microns (e.g. between 200 microns and 600 microns). In one embodiment, the semiconductor layer 114 is disposed within the central third of the cavity 134. In another embodiment the semiconductor layer 114 is disposed is the middle of the cavity 134.

The gate 120 may also be deposited on a second mirror 126 or below a first mirror 112 outside the cavity. The dielectric layers 110 and 124 are optically transparent. In one embodiment, the second mirror 126 is parallel to the first mirror 112. In another embodiment, the second mirror 126 is slanted as a small angle (for example, from 0.01 degree to 5.0 degree) with respect to the first mirror 112 to produce a wedge-shaped microcavity. In another embodiment, the first mirror 112 is slanted by the small angle with respect to the second mirror 126. The gap between the first mirror 112 and the second mirror 126 defines the cavity that contains the components of the EOC 100. The entire system may be supported on a substrate 128.

Application of emerging two-dimensional materials enables one to significantly expand the temperature range at which the disclosed technology is working. Examples of such materials include transition metal dichalcogenides and monochalcogenides (e.g., molybdenum disulfide and diselenide, and indium selenide), in which, in contrast to standard GaAs quantum wells, polaritons are stable up to the room temperature. The use of these materials includes, but is not limited to, the following room-temperature applications: (1) Conversion of electric signal to optical signal for broadband optical data transmission, e.g., in broadband optical internet; (2) Connection of compute nodes in high-speed computer networking communication systems in data centers and in local area network (LAN) and (3) Connection of compute nodes in graphic processing units (GPU) clusters.

Additionally, the disclosed high-speed low-latency low-energy exciton polariton optical interconnect enables the following low temperature and cryogenic applications: (1) Interconnect multiple quantum computers into a large quantum computer cluster thus providing enhanced computational capabilities of the quantum computers; (2) Connect the low-temperature module of quantum computers at T=4 K with room-temperature (RT) electronics via the optical fiber thus allowing to remove low-temperature electronic modules from the information transmission lines including those residing at T=77 K stage (3) Connect low-temperature modules of cryogenic and low-temperature computational electronics systems via the optical channel and (4) Interconnect optical computational systems (including optical quantum computers) with the peripheral electronics via the optical channel.

The disclosed EOC also enables one to interconnect multiple quantum processors in one large quantum computing cluster—much like classical computer nodes are connected to a high-performance cluster. This way the total number of simultaneously interconnected qubits can be increased significantly which unlocks the transformative applications listed above.

Scientific Background

Exciton polaritons in an optical cavity: Polaritons 200 are half-matter half-light quasiparticles in an optical microcavity, which embeds electronic transition material. Excitons 202 (i.e., the matter part of polaritons) are located in a semiconducting quasi-two-dimensional TMX layer placed in the anti-node of the confined optical mode in a planar cavity 204. The cavity 204 is formed by two parallel high-quality mirrors. The geometry of the optical cavity is shown in FIG. 2A.

In a single-layer TMX, the electronic states demonstrate strong spin-orbit (SO) splitting that results in two exciton branches: bright excitons that couple electrons and holes from the same SO valley, and dark excitons that couple different SO valleys. The bright excitons are coupled with the cavity modes with the coupling energy (Rabi splitting) ˜Ω_R≥40 meV. The photoluminescence (PL) spectrum in FIG. 2B shows well-pronounced hybridization of exciton and photon modes into polariton quasiparticles. In the disclosed approach, optical pumping is used thus, the dark excitons are not excited and, therefore, they are excluded from the over-all dynamics. The polariton wave function Ψ(r, t) is a quantum superposition of the cavity photon mode φ(r, t) and the bright exciton mode ψ(r, t),ΨI(r,t)=C_kφ(r,t)+X_kψ(r,t)  (1)with C_k and X_k to be the respective cavity photon and exciton Hopfield coefficients, which depend on the polariton in-plane wave vector k. The photon and exciton fractions in polaritons, |C_k² and |X_k|², can be varied in a controllable way from 0% to 100% by changing the width of the cavity. Since polaritons interact with the neighboring electric currents via their excitonic component, |X_k|², this enables one to tune the relevant interactions by setting the inter-mirror distance to the optimal value. The polariton energy E for the two polariton branches—upper polaritons (UP) and lower polaritons (LP)—is shown in FIG. 2C.

In some embodiments, a heterogenous TMD layer is used as the semiconducting layer 114. Heterogeneous TMD bi-layers are composed of two different TMD materials; FIG. 3A shows an example for MoS₂ and WSe₂. The heterogeneity enables one to mitigate darkening of the excitonic dipole transition in multilayer TMDs due to the indirect band gap formation. The layers are coupled due to van der Waals attraction at the interlayer distance d˜0.6 nm. Due to the difference in the band energies, negatively charged electrons (e) and positively changed holes (h) spatially separate thus, forming indirect (charge-transfer) excitons, IX, with e located in MoS₂ and h located in WSe₂ along with direct excitons, DX, where both e and h are located in the same WSe₂ layer, FIG. 3A. The fraction of IX and DX in the bi-layer, and the free carrier density, can be tuned by applying the gate voltage similar to that in coupled quantum wells. The respective PL spectra that confirm coupling of the exciton modes with light in a TMD bi-layer are shown in FIG. 3B. It was experimentally shown and then, theoretically understood by Kolmakov and co-authors that charge-transfer excitons can form dipolaritons, which are three-way quantum superposition of cavity photons, IX and DX. Due to charge separation in the IX component, dipolaritons are extremely sensitive to electric fields, as explained in Sec. “Electric switching mechanism” below. The dipolariton mutual interactions U (and thus, their dynamics) can be tuned by the dielectric environment, which modifies the exciton Bohr radius a_B, as is seen in FIG. 3C.

Effects of quantum coherence at 4 K. Thanks to their small effective mass (˜10⁻⁶ of the atomic mass) cavity polaritons undergo the Bose-Einstein condensation and transit to a highly-coherent superfluid state at temperatures <10 K. In this superfluid state, light and charges propagate virtually without dissipation. The polariton superfluidity is similar to superconductivity, which is the superfluidity of Cooper pairs. Polariton superfluidity at 4 K will enable us to reduce the heat released in the cryogenic system. Superfluid polaritons propagate with the speed of ˜5% of the speed of light in vacuum that results in a low latency 0.3 ns of the device.

Electric Switching Mechanism

Control of the polariton propagation by an electric current is one aspect of this disclosure. The mechanisms resulting in the polariton drag by electric current are reviewed in the following section.

Select parameters of one embodiment of the disclosed system are the following: The cryogenic operational temperature, approximately −452° F. (4 K above the absolute zero), high bandwidth (14 Gigabit of information per second), low latency (<0.3 ns) and low energy consumption per bit (less than 7 attoJoule per bit). The parameters match the key requirements for quantum computers and for low-temperature computer electronics.

In single-layer TMX, the exciton component of polaritons is entrained by the electric current running in the same or neighboring layer. In effect, the polariton are dragged in the direction of the current that results in the induced polariton fluxJ=γ_pE  (2)as shown in FIG. 4A. Here, E is the driving electric field induced by the applied electric voltage V and γ_p≈2.5×10¹⁶(Vs)⁻¹ is the drag coefficient at T=4 K. The drag in Eq. (2) is a trigger in a cryogenic optical electric switch at T≥3 K.

In a heterogeneous TMD (WSe₂/MoS₂) bi-layer, the driving voltage is applied to MoS₂ layer and thus, creates the electric force on electrons e in the indirect exciton (IX) component, see FIG. 4B. Since IX and cavity photons are coupled in dipolaritons, the respective electric force acting on the photons isF_photon=|C_k|²|Y_k|²eE  (3)where |Y_k|²=1−|C_k|²−|X_k|² is the IX fraction and e is the electron charge. Application of the gate voltage changes the IX and DX fractions, |Y_k|² and |X_k|² and thus, can be used for fine tuning of the electric drag force on photons in Eq. (3).

Also, delocalized electrons in n-doped MoS₂ bind to DX thus, forming charged excitons—trions (X⁻). The electric field in the TMX layer directly drags the trions thus providing an additional electric force improving the switching mechanism.

Methodology

This disclosure provides a linearly-shaped electrically controlled optical switch based on the studies of propagation of an exciton-polariton condensate in a patterned optical microcavity with an embedded quantum well. The polaritons are driven by a time-dependent drag force owing to the interaction of excitons in a quantum well and the electric current running in a neighboring quantum well. Polaritons are generated due to laser pumping with Gaussian distribution of power in the beam.

The dynamics of the polariton condensate was captured via the non-equilibrium Gross-Pitaevskii equation for the condensate wave function Ψ(r, t)

$\begin{array}{cc}i\hslash \frac{\partial \Psi \left(r,t\right)}{\partial t}=-\frac{{\hslash }^2}{2m}\mathrm{\Delta \Psi }\left(r,t\right)+U\left(r,t\right)\Psi \left(r,t\right)+g\Psi \left(r,t\right)|\Psi \left(r,t\right){|}^2-i\frac{\hslash }{2{\tau }_0}\Psi \left(r,t\right)+\mathrm{iP}\left(r,t\right)& \left(4\right)\end{array}$ where m is the polariton mass, r=(x, y) is a two-dimensional vector in the plane of the microcavity and time t, g is the polariton-polariton interaction strength, τ₀ is the polariton lifetime, and the source terms P(r, t) describes incoherent laser pumping of the polariton reservoir.

The effective potential for the polaritonsU(r,t)=U_conf(r)+U_w(r)+U_drag(r,t)  (5)is the sum of the confining potential owing to microcavity patterning U_conf(r), a linear potential corresponding to a constant accelerating force in a wedge-shaped microcavity U_w(r), and a time-dependent drag potential U_drag(r, t) caused by the driving electric current.

The channel potential U_conf(r) confining the polariton flow in transverse y direction can be applied, for example, by patterning one of the mirrors of the cavity or by the electrostatic potential. Another way is to apply U_conf(r) is electric trapping in the transverse direction y. The specific type of the confining potential is not essential for the disclosed technology. In the simulations, the respective linear channel was modeled by the potential energy profile shown in FIG. 5.

The average force acting upon a polariton wave packet in a wedge-shaped micro-cavity is F(r)=−∇E_C(r), where E_C(r) is the energy of the polariton band taken at the in-plane wavevector of the polariton k=0. For the wedge-like microcavity considered in this paper, the energy E_C(r) is a linear function of the spatial coordinate thus, the force is coordinate-independent. The corresponding potential is

$\begin{array}{cc}{U}_w\left(r\right)=\{\begin{array}{cc}{F}_x^{\left(1\right)}\left(x-x_c\right),& \mathrm{if}x<x_{\max }\\ F_x^{\left(1\right)}\left(x_{\max }-x_c\right)-F_x^{\left(2\right)}\left(x-x_{\max }\right),& \mathrm{if}x>x_{\max }\end{array}& \left(6\right)\end{array}$ where the force is applied in x-direction, x_c is the pumping center coordinate, x_max is a coordinate of the maximum of the wedge potential. The potential U_w(r) is sketched in FIG. 6.

The potential that represents the drag force caused by the applied electric drive in x-direction is taken equalU_drag(r,t)=−F_drag(t)(x−x_c)  (7)

Assuming that the electric drag force is directed along the x-axis, the potential (7) does not depend on the y-coordinate. The drag force exerted on polaritons well is estimated in the τ-approximation as

$\begin{array}{cc}{F}_{\mathrm{drag}}\left(t\right)=\frac{\left(p\right)}{{\tau }_p}=\frac{{\mathrm{m\gamma }}_{p}E\left(t\right)}{n_n{\tau }_p}& \left(8\right)\end{array}$ where <p> is the average gain of the linear momentum of polaritons owing to the drag, τ_p is the polariton momentum relaxation time, E(t) is a time-dependent electric field applied in the plane of the quantum well with free electrons,

$\begin{array}{cc}{n}_n=\frac{3\zeta \left(3\right){s\left(k_{B}T\right)}^3}{2{\mathrm{\hslash }}^2{c}_s^{4}m}& \left(9\right)\end{array}$ is the density of the normal component in a polariton superfluid, ζ(3)≈1.202 is the Riemann zeta function, s=4 is the spin degeneracy factor, k_B is the Boltzmann constant, T is temperature, and c_s=√{square root over (gn/m)} is the sound velocity in the spectrum of collective excitations in the polaritonic system, and in is the polariton condensate density. The polariton effective mass is

$\begin{array}{cc}m=2{\left(m_{ex}^{-1}+\frac{{\mathrm{cL}}_C}{\sqrt{\mathrm{\varepsilon \hslash }}}\right)}^{-1}& \left(10\right)\end{array}$ where m_ex is the exciton effective mass, L_C is the length of the microcavity (the distance between the DBRs), ε is the dielectric constant of the microcavity, and c is the speed of light in vacuum. In the simulations for a GaAs-based microcavity, set ε=13 and m_ex=m_e+m_h=0.24m₀, where m_e=0.07m₀ and m_h=0.17m₀ are the electron and hole effective masses, respectively, and m₀ is the free electron mass. Consider the case of zero detuning where the cavity photons and the excitons are in the resonance at k=0. In this case, the length of the microcavity is

$\begin{array}{cc}{L}_C=\frac{\pi \hslash c}{\sqrt{\varepsilon }\left(E_{\mathrm{band}}-E_{\mathrm{binding}}\right)}& \left(11\right)\end{array}$ where E_band is the band-gap energy and E_binding is the binding energy of a 2D exciton. In GaAs/AlGaAs quantum wells set E_band=1.51 eV and E_binding=7 meV. For dipolar excitons in GaAs/AlGaAs coupled quantum wells, the energy of the recombination peak is ℏω=1.61 eV.

The polariton-polariton interaction strength is

$\begin{array}{cc}g=\frac{3e^2{a}_B}{8{\mathrm{\pi \varepsilon }}_0\varepsilon }& \left(12\right)\end{array}$ where a_B=2πε₀εℏ²/m_re² is the two-dimensional Bohr radius of the exciton and m_r is the exciton reduced mass. For GaAs/AlGaAs quantum wells set m_r=m_em_h/(m_e+m_h). The polariton lifetime was taken in the simulations as τ₀=123 picoseconds (ps) as a representative value.

By taking the polariton condensate density n=10¹⁴ m⁻², the separation between exciton containing layers D=17.5 nm, the drag coefficient γ=6×10¹⁶(Vs)⁻¹ and the relaxation time τ_p=6×10⁻¹¹ s as representative parameters for temperature T=10 K from eqs. (8)-(11) and (12) one obtains n_n=2.6×10¹³ m⁻² and the drag force F_drag=0.17-8.3 meV/mm for the working range of electric fields E=0.01-0.5 V/mm. The case where the response of the system to the drag is linear and, was considered and hence, eq. (4) is applicable.

Numerical Units and Parameters: Simulations were made in numerical units for convenience. This enables us to scale the results of the simulations to other materials, if needed. The numerical units and relevant parameters are summarized in Table 1.

TABLE 1
Numerical units and relevant simulation parameters
Parameter	Numerical value	Value
Length	1 numerical unit (n.u.)	0.15	μm
	of length, Δx
Time	1 numerical unit (n.u.)	39	fs
	of time Δt
Polariton density	1 numerical unit (n.u.)	44.4	μm−2
	of 2D density, (Δx)−2
Polariton flux	1 numerical unit (n.u.)	2.56 × 10−2 particles/fs
	of 2D flux, J0
Wedge force at x < xc	Fx(1)	variable, 6.5 meV/mm if
		another value is not given.
Wedge force at xc < x	Fx(2)	variable, 6.5 meV/mm if
		another value is not given.
Distance between center of	xmax − xc	150	μm
pumping spot and maximum
of wedge potential
Full width at half maximum	fwhm	16.7	μm
of the pumping laser spot
Pulsed drag force	Fdrag	variable, 13-26 meV/mm
Time duration of pulsed drag	τ	variable, 100-200 ps
force
Simulation box in (x, y) plane	Lx × Ly	6000Δx × 1500Δx
x-coordinate of the cross-	xd	500Δx = 75 μm to the right
section, at which the		from xmax
transmitted polariton flux is
determined

The layout of the cavity is shown in FIG. 7. Equation (4) was numerically integrated on a graphical processing unit (GPU) accelerator with the 4th-order Runge-Kutta method in time with the numerical time step h=10⁻²Δt and the 4th-order accuracy in the spatial Laplace operator in the (x, y) plane on the spatial grid with spacing Δx.

Simulations Results

The results of detailed numerical studies are placed in an Appendix, which is found in U.S. Patent Application 63/045,094, the content of which is hereby incorporated by reference.

FIG. 8A and FIG. 8B shows the polariton density in the cavity after a pulsed drag force, F_rag is applied. It is seen that the polariton density is high at the pumping spot and gradually decreases in the channel with distance from spot.

The output signal in the EOC device as polaritons crossing the x=x_d cross-section positioned 75 μm to the right from x_max in the (x, y) plane, as shown in FIG. 7. The signal is characterized by the total flux of polaritons J through at x=x_d integrated along the cross-section of the channel, as a function of time,

$\begin{array}{cc}J=\int {\mathrm{dyj}}_{x❘x=x_d}{j}_x=\frac{\hslash }{2im}\left({\Psi }^{*}\frac{\partial \Psi }{\partial x}-c.c\right)& \left(13\right)\end{array}$ where the polariton wave function Ψ was calculated by numerically integrating eq. (4), and c.c. denotes the complex conjugate.

Initial Relaxation

We first calculated the polariton flux J at the cross-section x=x_d, as a function of time, when no drag force is applied to the system, F_drag=0. The results are shown in FIG. 9. The peak in the output signal at t≈2.5×10⁴Δt is caused by the initial relaxation in the polariton system. After the initial relaxation is over, t>1.2×10⁴Δt the flux J tends to zero due to the locking effect of the wedge potential U_w acting on the polaritons. (The respective potential is shown in FIG. 6.)

Single Electric Pulse

Then, the effect of the electric pulsed drag, F_drag on the polariton flux J was determined. FIG. 10 shows the polariton flux, J, after a pulsed drag force F_drag=13 meV/mm with the time duration τ=2×10³Δt was applied at t=1.3×10⁴Δt. As a result of the pulsed drag, a polariton pulse formed at x>x_max. The pulse propagates in the channel and reaches the cross-section x=x_d at t≈1.7×10⁴Δt. Thus, it takes ˜4×10³Δt for the pulse to propagate from the laser pump spot at x=x_c to the detection position at x=x_d.

Multiple Electric Pulses

Further, to understand the response of the system if multiple electric pulses, F_drag, were applied, calculated the flux J was calculated in the case where the drag force encompassed two pulses.

The magnitude of both pulses was equal to F_drag=13 meV/mm, and the time duration was τ=10³Δt. The first and second pulses were turned on at t=1.5×10⁴Δt and t=2.0×10⁴Δt, respectively. The result of the simulation is shown in FIG. 11. It is seen in the figure that two polariton pulses formed and propagated in the channel. The first pulse in the pair reached the cross-section x=x^d at t≈1.7×10⁴Δt.

If the time difference between the two drag force pulses was increased, the time between the two detected polariton pulses increased as well. The result of the simulation for the time between the drag pulses of 6×10³Δt is shown in FIG. 12.

If the time between the two drag pulses were smaller than ≈2×10³Δt, two polariton pulses overlapped and become indistinguishable. An example for two overlapping polariton pulses for τ=10³Δt drag pulses separated by the time interval 10³Δt is shown in FIG. 13.

CONCLUDING REMARKS

It was demonstrated that pulsed drag force generated by the applied pulsed voltage resulted in formation of the polariton pulses propagating in the channel and reaching the optical read-out area in the device. If multiple voltage pulses are applied then, multiple polariton pulses propagated in the system. Therefore, the system performs conversion of input electric signals into optical signals.

The low temperature environment provides the exciton stability in the semiconductor layer embedded into the optical microcavity. For example, for GaAs quantum well as a exciton containing layer, the working temperature are restricted by T ˜30 K. Above this temperature, the excitons in GaAs become thermodynamically unstable and the polaritons collapse.

However, application of emerging two-dimensional materials such as transition metal dichalcogenides and monochalcogenides enables one to mitigate this temperature limitations. For example, it is known that in these materials, polaritons remain stable up to the room temperature T=300 K (approx. 80° F.). Therefore, application of such materials permits one to significantly enlarge the temperature range and include room-temperature applications such as design EOC for high-speed optical data transmission lines including those listed in Sec. 1 “Significance of the Invention” above.

The detailed numerical analyses of the designed system with the variations of the parameters are placed in an Appendix which is found in U.S. Patent Application 63/045,094, the content of which is hereby incorporated by reference.

This written description uses examples to disclose the invention, including the best mode, and also to enable any person skilled in the art to practice the invention, including making and using any devices or systems and performing any incorporated methods. The patentable scope of the invention is defined by the claims, and may include other examples that occur to those skilled in the art. Such other examples are intended to be within the scope of the claims if they have structural elements that do not differ from the literal language of the claims, or if they include equivalent structural elements with insubstantial differences from the literal language of the claims.

Claims

1. An electro-optical converter comprising: a first mirror;a first dielectric layer, contiguous with the first mirror, wherein the first dielectric layer is optically transparent;an optical input channel and an optical output channel, both of which extend along a first longitudinal direction which is parallel to the first mirror, the optical input channel and the optical output channel being partially embedded within the first dielectric layer;a semiconducting layer comprising (1) at least one TMX layer, wherein TM is a transition metal selected from a group consisting of W, Mo, In and Re and X is selected from a group consisting of Se, Se2 and S2 or (2) a semiconductor quantum well layer, wherein the semiconducting layer has a first surface and a second surface, the first surface being contiguous with the first dielectric layer;a second dielectric layer that is optically transparent and is contiguous with the second surface of the semiconducting layer;an input electrical terminal and an output electrical terminal, each partially embedded within the second dielectric layer and each contiguous with the semiconducting layer; anda second mirror.

2. The electro-optical converter as recited in claim 1, further comprising a first conductive layer disposed between the input electrical terminal and the semiconducting layer and a second conducive layer disposed between the output electrical terminal and the semiconducting layer.

3. The electro-optical converter as recited in claim 1, further comprising a gate that is between the input electrical terminal and the output electrical.

4. The electro-optical converter as recited in claim 3, wherein the gate is at least partially embedded within the second dielectric layer.

5. The electro-optical converter as recited in claim 4, further comprising a third dielectric layer disposed between, and contiguous with, the semiconducting layer and the gate.

6. The electro-optical converter as recited in claim 1, wherein the semiconducting layer consists of a single-layer TMX layer, wherein TM is a transition metal selected from a group consisting of W, Mo, In and Re and X is selected from a group consisting of Se, Se2 and S2.

7. The electro-optical converter as recited in claim 1, wherein the semiconducting layer consists of a bi-layer with: a first TM1X1 layer wherein TM1 is a transition metal selected from a group consisting of W, Mo, In and Re and X1 is selected from a group consisting of Se, Se2 and S2;a second TM2X2 layer wherein TM2 is a transition metal selected from a group consisting of W, Mo, In and Re and X2 is selected from a group consisting of Se, Se2 and S2;wherein the first TM1X1 layer and the second TM2X2 layer are different.

8. The electro-optical converter as recited in claim 1, wherein the semiconducting layer is selected from a group consisting of GaAs/AlGaAs, ZnO, GaN, Cu2O and CuCl.

9. The electro-optical converter as recited in claim 1, wherein the semiconducting layer is less than 100 nm thick.

10. The electro-optical converter as recited in claim 1, wherein the second mirror is parallel to the first mirror.

11. The electro-optical converter as recited in claim 1, wherein the first mirror is slanted by an angle of 0.01 degree to 5 degrees relative to the second mirror.

12. The electro-optical converter as recited in claim 1, wherein the second mirror is slanted by an angle of 0.01 degree to 5 degrees relative to the first mirror.

13. The electro-optical converter as recited in claim 1, wherein the optical input channel and the optical output channel are separated by a gap of between 200 microns and 600 microns.