Claims
- 1. A high power light source system comprising:
- a first optical cavity comprising
- a first semiconductor gain element having an internal optical cavity portion for producing a radiation beam,
- a wavelength tuning reflector element in an external optical cavity portion coupled to receive the radiation beam from said first semiconductor gain element and for reflecting a portion of said radiation beam back into said internal optical cavity for tuning said gain element to emit radiation at a selected wavelength within a tunable bandwidth and provide an output beam of the selected wavelength radiation,
- said optical cavity portions defining said first optical cavity; and
- a second optical cavity comprising
- a second semiconductor gain element separate from said first optical cavity for receiving said output from said first optical cavity for enhancing the gain of said output beam, said second semiconductor gain element having a flared gain section of monotonically increasing lateral dimension from its input to its output.
- 2. The high power light source system according to claim 1 further comprising an optical isolator between said first and second optical cavities.
- 3. The high power light source system according to claim 1 wherein wavelength selection via said wavelength tuning reflector element is accomplished by simultaneous rotational and translational movement of said reflecting means about a pivot point.
- 4. The high power light source system according to claim 1 wherein said external optical cavity portion comprises either a Littman cavity or a Littrow cavity.
- 5. The high power light source system according to claim 1 wherein an optical length of said external optical cavity portion is equal to a particular integral number of half wavelengths at one or more desired wavelengths within a tunable bandwidth such that cavity phase error is zero only at one selected wavelength which is at a central wavelength of said tunable bandwidth.
- 6. The high power light source system according to claim 5 wherein said external optical cavity portion comprises either a Littman cavity or a Littrow cavity.
- 7. The high power light source system according to claim 1 further comprising a single mode section in optical communication with said flared gain element to provide for spatial mode selectivity to said output beam.
- 8. The high power light source system according to claim 7 further comprising an optical isolator between said first and second optical cavities.
- 9. The high power light source system according to claim 7 wherein wavelength selection via said wavelength tuning reflector element is accomplished by simultaneous rotational and translational movement of said reflecting means about a pivot point.
- 10. The high power light source system according to claim 7 wherein said external optical cavity portion comprises either a Littman cavity or a Littrow cavity.
- 11. The high power light source system according to claim 7 wherein an optical length of said external optical cavity portion is equal to a particular integral number of half wavelengths at one or more desired wavelengths within a tunable bandwidth such that cavity phase error is zero only at one selected wavelength which is at a central wavelength of said tunable bandwidth.
- 12. The high power light source system according to claim 7 wherein said external optical cavity portion comprises either a Littman cavity or a Littrow cavity.
REFERENCE TO RELATED APPLICATION
This is a continuation of patent application Ser. No. 08/592,906, filed Jan. 29, 1996 now U.S. Pat. No. 5,771,252, entitled, EXTERNAL CAVITY, CONTINUOUSLY TUNABLE WAVELENGTH SOURCE, which is incorporated herein by its reference.
STATEMENT AS TO RIGHTS TO INVENTIONS MADE UNDER FEDERALLY SPONSORED RESEARCH AND DEVELOPMENT
This invention was made with government support under Contract No. NAS2-14086, awarded by the National Aeronautics and Space Administration and under Contract No. 50-DKNA-4-00121 awarded by the Department of Commerce. The government has certain rights in the invention.
US Referenced Citations (7)
Non-Patent Literature Citations (3)
Entry |
Mar et al. "Mode-Locked Operation of a Master Oscillator Power Amplifier", IEEE Photonics Technology Letters, vol. 6, No. 9, pp. 1067-1069, Sep. 9, 1994. |
H. Tsuchida, "Tunable, Narrow Linewidth Output from an Injection Locked High Power AlGaAs Laser Diode Array", Optics Letters, vol. 19(21), pp. 1741-1743, Nov. 1, 1994. |
Goldberg et al. "High Power Mode-locked Compound Laser Using a Tapered Semiconductor Amplifier" IEEE Photonics Technology Letters, vol. 6, No. 9, pp. 1070-1072, Sep., 1994. |
Continuations (1)
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Number |
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592906 |
Jan 1996 |
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