Claims
- 1. A method for extracting semiconductor device model parameters, comprising:
obtaining terminal current data corresponding to various bias conditions in a set of test devices; extracting first and second current related parameters from the terminal current data; modifying the terminal current data using said extracted first current related parameters and second current related parameters; and extracting additional DC parameters from the modified terminal current data.
- 2. The method of claim 1, wherein extracting additional DC parameters further comprises:
extracting voltage related parameters; using the extracted voltage related parameters to extract length related parameters, and first and second resistance related parameters; additionally using said extracted first and second resistance related parameters to extract mobility related parameters and width related parameters; additionally using said extracted mobility and width related parameters to extract sub-threshold region related parameters; using the extracted voltage related parameters to extract drain induced barrier lower related parameters; and using the extracted voltage related parameters, length related parameters, first and second resistance related parameters, mobility related parameters, width related parameters, sub-threshold region related parameters, and drain induced barrier lower related parameters to extract drain saturation current related parameters.
- 3. A method for extracting semiconductor device model parameters comprising:
obtaining terminal current data corresponding to various bias conditions in a set of test devices; extracting Idiode related parameters and Ibjt related parameters from the terminal current data; modifying the terminal current data using the extracted Idiode related parameters and Ibjt related parameters; and extracting additional DC parameters from the modified terminal current data.
- 4. The method of claim 4, wherein extracting additional DC parameters further comprises:
extracting Vth related parameters; using the extracted Vth related parameters to extract Leff related parameters, Rd related parameters and Rs related parameters; using the extracted Vth related parameters, Leff related parameters, Rd related parameters and Rs related parameters to extract mobility related parameters and Weff related parameters; using the extracted Vth related parameters, Leff related parameters, Rd related parameters, Rs related parameters, mobility related parameters and Weff related parameters to extract sub-threshold region related parameters; using the extracted Vth related parameters to extract drain induced barrier lower related parameters; and using the extracted Vth related parameters, Leff related parameters, Rd related parameters, Rs related parameters, mobility related parameters and Weff related parameters, sub-threshold region related parameters, and drain induced barrier lower related parameters to extract Idsat related parameters.
- 5. The method of claim 3, wherein extracting additional DC parameters further comprises:
extracting junction related parameters.
- 6. The method of claim 3, wherein the terminal current data comprises Id v. Vgs curves, and wherein extracting Idiode related parameters further comprises:
extracting Jsbjt and ndio using a middle part of at least one Id v. Vgs curve measured in a largest device among the set of test devices; extracting Rbody using high current parts of Id v. Vgs curves measured in test devices having different sizes; and extracting nrecf and jsrec using one or more Id v. Vgs curves measured in a shortest device among the set of test devices.
- 7. The method of claim 3, wherein extracting Ibjt related parameters further comprises:
constructing from the terminal current data a set of Ic/Ip v. Vgs curves for a shortest device; and extracting Ln using the set of Ic/Ip v. Vgs curves.
- 8. The method of claim 3, wherein extracting additional DC parameters comprises:
extracting Iii related parameters;
- 9. The method of claim 8, wherein the terminal current data comprises Ip v. Vgs curves and Id v. Vgs curves, and wherein extracting Iii related parameters further comprises:
constructing a set of Iii/Id V. Vgs curves from Ip v. Vgs curves and Id v. Vgs curves measured in a shortest device and modified using the extracted Idiode related parameters and Ibjt related parameters; extracting α0, β0, β1, and β2 using the constructed Iii/Id v. Vgs curves; extracting Vdsatii by averaging over an array of Vdsatii values, the array of Vdsatii values being obtained by finding a point in each Iii/Id v. Vgs curve where Ip/Id=α0; and extracting Lii using the array of Vdsatii values.
- 10. The method of claim 9, further comprising:
optimizing the extracted α0, β0, β1, β2, Vdsatii, and Lii parameters
- 11. A method for extracting semiconductor device model parameters comprising:
obtaining terminal current data corresponding to various bias conditions in a set of test devices; extracting Idgid1 related parameters, Isdig1 related parameters, and Ig related parameters from the terminal current data; modifying the terminal current data using the extracted Idgid1 related parameters, Isdig1 related parameters, and Ig related parameters; and extracting additional DC parameters from the modified terminal current data.
- 12. The method of claim 11, wherein obtaining terminal current data further comprises:
obtaining measured terminal current data corresponding to various bias conditions in a set of test devices; extracting Idiode related parameters and Ibjt related parameters from the terminal current data; and modifying the measured terminal current data using the extracted Idiode related parameters and Ibjt related parameters.
- 13. The method of claim 11, wherein extracting additional DC parameters further comprises:
extract Leff related parameters, Rd related parameters and Rs related parameters; using the extracted Leff related parameters, Rd related parameters and Rs related parameters to extract mobility related parameters and Weff related parameters; using the extracted Leff related parameters, Rd related parameters, Rs related parameters, mobility related parameters and Weff related parameters to extract sub-threshold region related parameters; and using the extracted Leff related parameters, Rd related parameters, Rs related parameters, mobility related parameters, Weff related parameters, and sub-threshold region related parameters to extract Idsat related parameters
- 14. The method of claim 11, wherein extracting additional DC parameters comprises:
extracting junction related parameters.
- 15. A method of extracting Idiode related parameters for modeling a SOI MOSFET device, comprising:
obtaining terminal current data corresponding to various bias conditions in a set of test devices, the terminal current data including Id v. Vps curves; extracting Jsbjt and ndio using a middle part of at lease one Id v. Vps curve measured in a largest device among the set of test devices; extracting Rbody using high current parts of the Id v. Vps curves measured in test devices having different sizes; and extracting nrecf and jsrec using Id v. Vps curves measured in a shortest device among the set of test devices.
- 16. A method of extracting Ibjt related parameters for modeling a SOI MOSFET device, comprising:
obtaining terminal current data corresponding to various bias conditions in a set of test devices, the terminal current data including Id v. Vps curves; constructing from the terminal current data a set of Ic/Ip v. Vps curves for a shortest device; and extracting Ln using the set of Ic/Ip v. Vps curves.
- 17. A method of extracting Iii related parameters for modeling a SOI MOSFET device, comprising:
obtaining terminal current data corresponding to various bias conditions in a set of test devices, the terminal current data including Ip v. Vgs curves and Id v. Vgs curves; constructing a set of Iii/Id v. Vgs curves from Ip v. Vgs curves and Id v. Vgs curves measured in a shortest device; extracting α0, β0, β1, and β2 using the constructed Iii/Id v. Vgs curves; extracting Vdsatii by averaging over an array of Vdsatii values, the array of Vdsatii values being obtained by finding a point in each Iii/Id v. Vgs curve where Ip/Id=α0; and extracting Lii using the array of Vdsatii values.
- 18. A computer program product for use in conjunction with a computer system, the computer program product comprising a computer readable storage medium and a computer program mechanism embedded therein, the computer program mechanism comprising:
logic for obtaining terminal current data corresponding to various bias conditions in a set of test devices; logic for extracting first and second current related parameters from the terminal current data; logic for modifying the terminal current data using said extracted first current related parameters and second current related parameters; and logic for extracting additional DC parameters from the modified terminal current data.
- 19. The computer program product of claim 18, wherein the logic for extracting additional DC parameters further comprises:
logic for extracting voltage related parameters; logic for using the extracted voltage related parameters to extract length related parameters, and first and second resistance related parameters; logic for additionally using said extracted first and second resistance related parameters to extract mobility related parameters and width related parameters; logic for additionally using said extracted mobility and width related parameters to extract sub-threshold region related parameters; logic for using the extracted voltage related parameters to extract drain induced barrier lower related parameters; and logic for using the extracted voltage related parameters, length related parameters, first and second resistance related parameters, mobility related parameters, width related parameters, sub-threshold region related parameters, and drain induced barrier lower related parameters to extract drain saturation current related parameters.
- 20. A system for extracting semiconductor device model parameters, comprising:
a central processing unit (CPU); a port or I/O device communicating with the central processing unit to provide terminal current data to the CPU corresponding to various bias conditions in a set of test devices; a memory communicating with the CPU and containing instructions executable by the CPU to extract Idiode related parameters and Ibjt related parameters from said terminal current data, to modify said terminal current data based on the extracted Idiode and Ibjt related parameters and to extract additional DC parameters based on said modified terminal current data.
- 21. The system according to claim 20, wherein said memory further contains instructions executable by the CPU to:
extract Vth related parameters; use the extracted Vth related parameters to extract Leff related parameters, Rd related parameters and Rs related parameters; use the extracted Vth related parameters, Leff related parameters, Rd related parameters and Rs related parameters to extract mobility related parameters and Weff related parameters; use the extracted Vth related parameters, Leff related parameters, Rd related parameters, Rs related parameters, mobility related parameters and Weff related parameters to extract sub-threshold region related parameters; use the extracted Vth related parameters to extract drain induced barrier lower related parameters; and use the extracted Vth related parameters, Leff related parameters, Rd related parameters, Rs related parameters, mobility related parameters, Weff related parameters, sub-threshold region related parameters, and drain induced barrier lower related parameters to extract Idsat related parameters.
- 22. The system of claim 20, wherein the terminal current data comprises Id v. Vps curves, and wherein the instructions for extracting Idiode related parameters comprise instructions to:
extract Jsbjt and ndio using a middle part of Id v. Vps curves measured in a largest device among the set of test devices; extract Rbody using a high current part of the Id v. Vps curves measured in test devices having different sizes; and extract nrecf and jsrec using Id v. Vps curves measured in a shortest device among the set of test devices.
- 23. The system of claim 20, wherein the instructions for extracting Ibjt related parameters comprise instructions to:
construct from the terminal current data a set of Ic/Ip v. Vps curves for a shortest device; and extract Ln using the set of Ic/Ip v. Vps curves.
- 24. The system of claim 20, wherein the terminal current data comprises Ip v. Vgs curves and Id v. Vgs curves, and wherein the instructions for extracting additional DC parameters include instructions for extracting Iii related parameters, and the instructions for extracting Iii related parameters comprises instructions to:
construct a set of Iii/Id v. Vgs curves from Ip v. Vgs curves and Id v. Vgs curves measured in a shortest device and modified using the extracted Idiode related parameters and Ibjt related parameters; extract α0, β0, β1, and β2 using the constructed Iii/Id v. Vgs curves; extract Vdsatii by averaging over an array of Vdsatii values, the array of Vdsatii values being obtained by finding a point in each Iii/Id v. Vgs curve where Ip/Id=α0; and extract Lii using the array of Vdsatii values.
Parent Case Info
[0001] This patent claims priority pursuant to 35 U.S.C. § 119(e)1 to U.S. Provisional Patent Application Serial No. 60/368,599, filed Mar. 29, 2002.
Provisional Applications (1)
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Number |
Date |
Country |
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60368599 |
Mar 2002 |
US |