Claims
- 1. An apparatus for measuring strain, comprising:
a semiconductor film and an adjacent metal shunt forming an interface therebetween; wherein a strain induced at least at the interface changes a resistance at the interface.
- 2. The apparatus of claim 1, wherein:
the induced strain comprises a tensile strain.
- 3. The apparatus of claim 1, wherein:
the induced strain comprises a compressive strain.
- 4. The apparatus of claim 1, wherein:
the interface comprises a resistive interface.
- 5. The apparatus of claim 1, wherein:
the interface comprises a Schottky interface.
- 6. The apparatus of claim 1, wherein:
the semiconductor film comprises an n-type thin film with a thickness of approximately one to ten microns.
- 7. The apparatus of claim 1, wherein:
the semiconductor film comprises Indium Antimonide.
- 8. The apparatus of claim 1, wherein:
the metal shunt comprises gold.
- 9. The apparatus of claim 1, further comprising:
a flexible membrane on which the semiconductor film and metal shunt are carried.
- 10. The apparatus of claim 9, further comprising:
a frame to which the flexible membrane is attached.
- 11. The apparatus of claim 1, further comprising:
a semi-insulating substrate on which the semiconductor film and metal shunt are grown.
- 12. The apparatus of claim 1, wherein:
the semiconductor film and metal shunt are provided in a plate structure having a substantially rectangular geometry and characterized by a filling factor of approximately 9/16.
- 13. The apparatus of claim 1, further comprising:
a control for obtaining a measurement indicative of the change in the resistance of the interface by applying a constant current to the semiconductor film and the metal shunt to induce a voltage therein, and measuring a change in the voltage that is indicative of the change in the resistance.
- 14. The apparatus of claim 13, wherein:
the control determines at least one of a pressure and temperature based on the obtained measurement.
- 15. The apparatus of claim 14, further comprising:
a memory for storing calibration data; wherein the control accesses the calibration data for use in determining the at least one of a pressure and temperature.
- 16. The apparatus of claim 1, wherein:
the strain is induced in a direction substantially parallel to a length of the interface.
- 17. The apparatus of claim 1, wherein:
heights of the semiconductor film and metal shunt are substantially equal.
- 18. A method for measuring strain, comprising:
applying a constant current to a hybrid semiconductor device comprising a semiconductor film and an adjacent metal shunt forming an interface therebetween to induce a voltage in the hybrid semiconductor device; inducing a strain at least at the interface to change a resistance at the interface; and measuring a change in the voltage that is indicative of the change in the resistance.
- 19. A method for fabricating a semiconductor device, comprising:
growing a thin semiconductor film on a semi-insulating substrate; defining a semiconductor mesa with a desired lateral dimension by removing a portion of the thin semiconductor film; and depositing metal onto the substrate to form a metal shunt adjacent to the semiconductor mesa with a desired lateral dimension.
- 20. The method of claim 19, further comprising:
inducing a strain at least at an interface between the semiconductor mesa and the metal shunt to change a resistance at the interface.
- 21. A method for determining at least one of a pressure and temperature acting on a sensor, comprising:
exposing a sensor comprising a metal-semiconductor hybrid device carried on a flexible membrane to an environment in which the at least one of a pressure and a temperature acts; obtaining a measurement indicative of a change in a resistance of the metal-semiconductor hybrid device caused by a deformation of the metal-semiconductor hybrid device that is induced by a corresponding deformation of the flexible membrane; and determining the at least one of a pressure and temperature based on the obtained measurement.
- 22. The method of claim 21, further comprising:
accessing calibration data for use in the determination of the at least one of a pressure and temperature.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application: (1) is a continuation-in-part of U.S. patent application Ser. No. 09/652,821, filed Aug. 31, 2000, entitled “Magnetoresistive sensor, magnetoresistive head and magnetic recording/reproducing apparatus,” (Docket No. 11089/13781); (2) is a continuation-in-part of U.S. patent application Ser. No. 09/796,304, filed Feb. 28, 2001, entitled “Method and system for finite element modeling and simulation of enhanced magnetoresistance in thin film semiconductors with metallic inclusions” (Docket No. 11098/14348); and (3) claims the benefit of U.S. provisional patent application No. 60/398,391, filed Jul. 25, 2002, and entitled “Extraordinary Piezoconductance In Inhomogeneous Semiconductors, Application To High Sensitivity, Solid State Pressure And Temperature Sensors” (Docket No. NEC19123P/16791).
Provisional Applications (1)
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Number |
Date |
Country |
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60398391 |
Jul 2002 |
US |
Continuation in Parts (2)
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Number |
Date |
Country |
Parent |
09652821 |
Aug 2000 |
US |
Child |
10626403 |
Jul 2003 |
US |
Parent |
09796304 |
Feb 2001 |
US |
Child |
10626403 |
Jul 2003 |
US |