Claims
- 1. A method for producing a semiconductor photo-detection device provided with a first impurity-doped region having a relatively high concentration and a step-like distribution for forming a light absorbing area in a semiconductor, and a second impurity-doped region forming a guardring and surrounding said first impurity-doped region while partly superimposing on said first impurity-doped region, in which said first impurity-doped region is formed by performing at least two times a step of forming an impurity-doped region so that said first impurity-doped region has a depth which is arranged so as to continuously vary in said second impurity-doped region.
- 2. A method for producing a semiconductor photo-detection device according to claim 1, in which the depth of said first impurity-doped region is made shallow in a circumferential portion of said first impurity-doped.
- 3. A method for producing a semiconductor photo-detection device according to claim 2, in which said method comprises a step of forming a film at a central portion of said first impurity-doped region and heating the same after said first impurity-doped region has been formed by performing at least two times said impurity-doped region forming step.
- 4. A method for producing a semiconductor photo-detection device provided with a first impurity-doped region having a relatively high concentration and a step-like distribution for forming a light absorbing area in a semiconductor, and a second impurity-doped region forming a guardring and surrounding said first impurity-doped region while partly superimposing on said first impurity-doped region, comprising: a step of forming, by impurity doping, said second impurity-doped region having a relatively low concentration and a gradational distribution; a step of performing working on said crystal so as make a surface of said crystal uneven; and a step of forming said first impurity-doped region having a relatively high concentration and a step-like distribution.
- 5. A method for producing a semiconductor photo-detection device according to claim 4, in which the depth of said first impurity-doped region is made shallow in a circumferential portion of said first impurity-doped.
- 6. A method for producing a semiconductor photo-detection device according to claim 5, further comprising a step of forming a film at least at a central portion of said first impurity-doped region and heating the same after execution of said step of forming said first impurity-doped region having a relatively high concentration and a step-like distribution.
- 7. A method for producing a semiconductor photo-detection device provided with a first impurity-doped region having a relatively high concentration and a step-like distribution for forming a light absorbing area in a semiconductor, and a second impurity-doped region forming a guardring and surrounding said first impurity-doped region while partly superimposing on said first impurity-doped region, in which after formation of said first impurity-doped region, a film is formed at least a part of a surface of said first impurity-doped region and heated so that said first impurity-doped region is arranged so as to have at least two depths which are different from each other but continuous to each other.
- 8. A method for producing a semiconductor photo-detection device according to claim 7, in which the depth of said first impurity-doped region is made shallow in a circumferential portion of said first impurity-doped region.
- 9. A method for producing a semiconductor photo-detection device according to claim 8, in which said method comprises a step of forming a film at a central portion of said first impurity-doped region and heating the same after formation of said first impurity-doped region.
Priority Claims (2)
Number |
Date |
Country |
Kind |
1-29802 |
Feb 1989 |
JPX |
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2-110062 |
Apr 1990 |
JPX |
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Parent Case Info
This is a Continuation-In-Part Application of our copending U.S. patent application, allowed Sep. 27, 1991 Ser. No. 07/474,336 filed Feb. 2, 1990, the disclosure of which is hereby incorporated by reference.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4876209 |
Forrest |
Oct 1989 |
|
4992386 |
Furuyama et al. |
Feb 1991 |
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Foreign Referenced Citations (4)
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Date |
Country |
0136225 |
Jun 1986 |
JPX |
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Sep 1986 |
JPX |
0051674 |
Feb 1989 |
JPX |
0159775 |
Jun 1990 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Taguchi et al., "Planar Type InGaAs PLEG-APD for Optical Communication", Shingakugichou, OQE86-183, pp. 71-78. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
474336 |
Feb 1990 |
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