Faucet component with coating

Information

  • Patent Grant
  • 9909677
  • Patent Number
    9,909,677
  • Date Filed
    Friday, June 17, 2016
    7 years ago
  • Date Issued
    Tuesday, March 6, 2018
    6 years ago
Abstract
A component for a faucet includes a substrate including alumina and a first material provided over at least a portion of the substrate. The first material includes titanium and carbon. The component also includes a second material provided over the first material, the second material including carbon and having carbon sp3 bonding of at least 40 percent.
Description
BACKGROUND

This invention relates generally to multi-layer surface coatings for use with articles of manufacture and products requiring low friction, low wear, and protective exterior surfaces. More particularly, the invention is related to articles having mutually sliding components, such as valve components for water mixing valves, having surface protective layers comprising a strengthening layer and an outer amorphous diamond coating.


In certain applications, such as for example, valve plates for fluid control valves, there is a need for mutually sliding surfaces to be wear resistant, abrasion resistant, scratch resistant, and to have a low coefficient of friction. The elements of one type of control valve for mixing of hot and cold water streams typically comprise a stationary disk and a moveable sliding disk, although the plate elements may be of any shape or geometry having a sealing surface, including e.g., flat, spherical, and cylindrical surfaces. The term “disk” herein therefore refers to valve plates of any shape and geometry having mating surfaces which engage and slide against each other to form a fluid-tight seal. The stationary disk typically has a hot water inlet, a cold water inlet, and a mixed water discharge outlet, while the moveable disk contains similar features and a mixing chamber. It is to be understood that the mixing chamber need not be in the disk but could part of an adjacent structure. The moveable disk overlaps the stationary disk and may be slid and/or rotated on the stationary disk so that mixed water at a desired temperature and flowrate is obtained in the mixing chamber by regulating the flowrate and proportions of hot water and cold water admitted from the hot water inlet and the cold water inlet and discharged through the mixed water discharge outlet. The disks mating sealing surfaces should be fabricated with sufficient precision to allow the two sealing surfaces to mate together and form a fluid tight seal (i.e. they must be co-conformal and smooth enough to prevent fluid from passing between the sealing surfaces). The degree of flatness (for a flat plate shape), or co-conformity (for non-flat surfaces) and smoothness required depend somewhat on the valve construction and fluids involved, and are generally well known in the industry. Other types of disk valves, while still using mating sealing surfaces in sliding contact with each other, may control only one fluid stream or may provide mixing by means of a different structure or port configuration. The stationary disk may for example be an integral part of the valve body.


Previous experience with this type of control valve has demonstrated there is a problem of wear of the mating surfaces of the disks due to the fact that the stationary and moveable disks are in contact and slide against each other (see for example U.S. Pat. Nos. 4,935,313 and 4,966,789). In order to minimize the wear problem, these valve disks are usually made of a sintered ceramic such as alumina (aluminum oxide). While alumina disks have good wear resistance, they have undesirable frictional characteristics in that operating force increases, and they tend to become “sticky” after the lubricant grease originally applied to the disks wears and washes away. The scratch and abrasion resistance of alumina plates to large and small particles (respectively) in the water stream is good; however, they are still susceptible to damage from contaminated water streams containing abrasive particles such as sand; and improvement in this regard would be beneficial. Additionally, the porous nature of the sintered ceramic disks makes them prone to “lockup” during long periods of non-use, due to minerals dissolved in the water supply that precipitate and crystallize between coincident pores in the mating surfaces. One objective of the present invention is to provide disks having reduced wear, improved scratch and abrasion resistance and reduced frictional characteristics. Another objective is to provide non-porous or reduced-porosity valve disks to reduce the number of locations where precipitated crystals may form between the mating surfaces.


Sintered ceramics in particular are relatively difficult and expensive (due to their hardness) to grind and polish to a degree of co-conformity and smoothness adequate for sealing. It would be advantageous to use a material for the disks, such as metal, which is less expensive, easier to grind and polish and which is not porous. However, the wear resistance and frictional behavior of bare metallic disks is generally not acceptable for sliding seal applications. A further objective of the present invention is to provide disks made of metal a base material and having improved wear, scratch, and abrasion resistance and improved frictional characteristics as compared to uncoated ceramic disks.


It is disclosed in the prior art (e.g., U.S. Pat. No. 4,707,384 and U.S. Pat. No. 4,734,339, which are incorporated herein by reference) that polycrystalline diamond coatings deposited by chemical vapor deposition (CVD) at substrate temperatures around 800-1000° C. can be used in combination with adhesion layers of various materials in order to provide scratch and wear resistant components. Polycrystalline diamond films, however, are known to have rough surfaces due to the crystal facets of the individual diamond grains, as is apparent in the photographs of FIGS. 2 and 3 in the '384 patent. It is known in the art to polish such surfaces in order to minimize the coefficient of friction in sliding applications, or even to deposit the polycrystalline diamond on a smooth substrate and then remove the film from the substrate and use the smooth side of the film (which was previously against the substrate) rather than the original surface as the bearing surface. The present invention overcomes prior art problems by providing a number of advantageous features, including without limitation providing a smooth and very hard surface for sliding applications, while avoiding difficult and expensive post-processing of a polycrystalline diamond surface layer. The methodology also advantageously employs substrate materials (such as, suitable metals, glasses, and composite and organic materials) that cannot be processed at the elevated temperatures necessary for CVD deposition of polycrystalline diamond.


It is also disclosed in the prior art (e.g., U.S. Pat. No. 6,165,616, which is incorporated herein by reference) that engineered interface layers may be employed to relieve thermally-induced stress in a polycrystalline diamond layer. These thermally induced stresses arise during cooling of the substrate after coating deposition at relatively high temperatures, and are due to the difference in thermal expansion coefficient between the substrate and the diamond coating. Rather complicated engineering calculations are specified in the '616 patent to predetermine the desired interface layer composition and thickness. The interface layer thickness' disclosed in the '616 patent to minimize the thermally-induced stress in the diamond layer are of the order 20 to 25 microns according to FIGS. 1 through 3. Such thick interface layers are expensive to deposit, due to the time necessary to deposit them and the high cost of the equipment required. The present invention also advantageously includes, without limitation, minimizing the coating cost but still achieving desired results by employing much thinner interface layers than those taught by the '616 patent, and to avoid creating the thermally-induced stresses which necessitate such complicated engineering calculations by depositing a hard surface layer at a relatively low temperature compared to the prior art, such as the '616 patent.


It is further disclosed in the prior art (e.g., U.S. Pat. No. 4,935,313 and U.S. Pat. No. 4,966,789, which are incorporated herein by reference) that cubic crystallographic lattice carbon (polycrystalline diamond) and other hard materials may be used as surface coatings on valve disks, and that pairs of mutually sliding valves discs which differ from each other in either surface composition or surface finish are preferable to those which are the same in these characteristics, with respect to minimizing friction between the plates. The present invention provides mating valve disk surfaces having a lower friction coefficient than the disclosed materials in water-lubricated or fluid wetted surface applications such as water valves, and to allow identical processing of both mating surfaces in order to avoid the need to purchase and operate different types of processing equipment. The present invention further provides, without limitation, mating valve disk surfaces having a lower friction coefficient than the disclosed materials in water-lubricated or fluid wetted surface applications such as water valves. Furthermore, both mated sliding surfaces of the disks can be hard and have an abrasion resistance to contaminated water streams and to allow identical processing of both mating surfaces in order to avoid the need to purchase and operate different types of processing equipment.


SUMMARY

An exemplary embodiment relates to a component for a faucet that includes a substrate comprising alumina. A first material is provided over at least a portion of the substrate, the first material comprising titanium and carbon. A second material is provided over the first material, the second material comprising carbon and having carbon sp3 bonding of at least 40 percent.


Another exemplary embodiment relates to a component for a faucet that includes a ceramic substrate and a first material on a surface of the substrate where the first material includes titanium. A second material is on the first layer of material and includes at least 40 percent tetrahedrally-bonded carbon.


Another exemplary embodiment relates to a component for a faucet that includes an alumina substrate. A material comprising carbon is provided over at least a portion of the substrate, the material comprising carbon having at least 40 percent tetrahedrally-bonded carbon. A material comprising titanium is provided between the material comprising carbon and the substrate.


Another exemplary embodiment relates to a component for a fluid control valve that includes a valve disk comprising a substrate comprising alumina, a titanium carbide material provided on a surface of the substrate, and a carbon layer on the titanium carbide material, the carbon layer comprising at least 40 percent tetrahedrally-bonded carbon.


Another exemplary embodiment relates to a fluid control valve that includes a first disk in contact with a second disk where a surface of the first disk is configured to slide against a surface of the second disk. A coating is provided on the surface of the first disk, the coating comprising a first layer of material comprising titanium and a second layer of material provided over the first layer of material, the second layer of material being amorphous and comprising at least 40 percent tetrahedrally-bonded carbon.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 is one form of valve incorporating a multi-layer structure with an amorphous diamond layer overlying a substrate.



FIG. 2 is a detail of one form of multi-layer structure of the invention.



FIG. 3 illustrates yet another multi-layer structure with an added additional adhesion-promoting layer.



FIG. 4 is a further form of multi-layer structure of FIG. 2 wherein a strengthening layer includes two layers of different materials.



FIG. 5 is a photomicrograph of the surface appearance of an exterior amorphous diamond layer over an underlying substrate or layer.





DETAILED DESCRIPTION

According to an exemplary embodiment, a component includes a wear resistant, scratch resistant, abrasion resistant, and low-friction surface. More particularly, it the component includes a multi-layer structure comprising a thin strengthening layer having higher hardness than the substrate material, and a thin amorphous diamond wear-resistant and friction-reducing layer deposited on the strengthening layer. The amorphous diamond layer provides a low-friction, wear and abrasion resistant sealing surface with particular advantages in water-lubricated or fluid wetted applications. The incorporation of a strengthening layer to support the top amorphous diamond layer, provides better scratch and abrasion resistance than an amorphous diamond layer alone, and allows a thinner amorphous diamond layer to be used. The strengthening layer is particularly useful to avoid problems with large particles caught between the mating surfaces, which can break through a thin diamond coating because of plastic deformation of the softer substrate beneath.


Embodiments of the invention are illustrated generally in the figures, where FIG. 1 shows one form of the valve 10 with handle 12 incorporating the invention. In particular, FIGS. 2-4 illustrate a portion of a valve 10 having a substrate 18 for a sliding component 20 and/or a fixed component 22 of the valve 10 which can comprise a base material wherein the base material can be the same or different in the sliding component 20 and the fixed component 22. In other embodiments, one of the components 20, 22 can be fixed. Preferably the base material is a sintered ceramic or a metal. Base materials can also comprise glasses or glassy materials, cermets, polymeric materials, composite materials, intermetallic compounds such as iron aluminide, and other materials mechanically suitable for the application. The metals can include, for example, any conventional metal, including without limitation, stainless steel, brass, zirconium, titanium, aluminum, and alloys of the latter three materials. Stainless steel, titanium, and zirconium, and aluminum are the most preferred metals, with the term stainless steel referring to any type such as 304, 316, etc., and customized variations thereof and with the terms titanium, zirconium, and aluminum understood to include alloys comprised mostly of those metals. Sintered (powdered) stainless steel is a preferred substrate material because it can be economically molded into complex shapes suitable for disks and can be economically ground and polished to achieve a mating smooth sealing surface. In the case of sintered stainless steel, “fully dense” substrates and metal injection molded substrates are preferred. Titanium and zirconium are preferred base materials because they can be easily oxidized or anodized to form a hard surface layer. Ceramics can be any conventional ceramic material, including without limitation, for example, sintered alumina (aluminum oxide) and silicon carbide, with alumina being a preferred material. Composite materials can include, for example, any conventional cermets, fiber reinforced epoxies and polyamides, and carbon-carbon composites. Glass and glassy materials can include for example borosilicate glass such as Pyrex™, and materials such as toughened laminated glass and glass-ceramics. Glass, glassy materials and cermets are preferred substrates because they can be economically molded into complex shapes suitable for disks and can be economically ground and polished to a flat and smooth surface. Iron aluminide is understood to be a material consisting mainly of that iron and aluminum but may also contain small amounts of such other elements as molybdenum, zirconium, and boron.


As shown in FIG. 2, a strengthening layer 23 can also be placed directly on the substrate surface 18. This layer 23 can comprise a material having higher hardness than the substrate 18. Suitable materials for the strengthening layer 23 can include compounds of Cr, Ti, W, Zr, and any other metals conventionally known for use in hard coatings. The compounds include without limitation are nitrides, carbides, oxides, carbo-nitrides, and other mixed-phase materials incorporating nitrogen, oxygen, and carbon. One highly preferred material for the strengthening layer 23 is chromium nitride. Chromium nitride in the present application most preferably refers to a single or mixed phase compound of chromium and nitrogen having nitrogen content in the range of about 10 to about 50 atomic percent. The term chromium nitride also refers to a material containing such doping or alloying elements as yttrium, scandium, and lanthanum in addition to chromium and nitrogen.


Another material suitable for the strengthening layer 23 is conventional DLC (Diamond-Like Carbon), which is a form of non-crystalline carbon well known in the art and distinct from amorphous diamond. DLC coatings are described for example in U.S. Pat. No. 6,165,616 (in which they are called (a-C) coatings). DLC can be deposited by sputtering or by conventional CVD. DLC is an amorphous material with mostly sp2 carbon bonding and little of the tetrahedral sp3 bonding that characterizes amorphous diamond. The hardness of DLC is substantially lower than that of amorphous diamond and is more similar to the hardness of conventional hard coating materials such as titanium nitride and chromium nitride. The internal stresses in DLC coatings are also lower than those in amorphous diamond coatings, allowing DLC to be deposited in thicker layers than amorphous diamond without loss of adhesion. The term DLC as used herein includes hydrogenated forms of the material.


The strengthening layer 23 functions primarily to improve scratch and abrasion resistance of the multilayer coating. The hardness of the strengthening layer 23 should be at least greater than that of the substrate 18 in order to perform its intended function of improving the scratch resistance of the coated disk. The thickness of the strengthening layer 23 is at least a thickness sufficient to improve the scratch resistance of the substrate 18. For materials typically used as hard coatings, such as those disclosed above, this thickness is generally from around 500 nm to around 10 microns, and preferably from about 2000 nm to around 5000 nm. In testing of faucet water valves it has been found that a chromium nitride strengthening layer having a thickness of about 5 microns provides adequate scratch and abrasion resistance (in conjunction with a thin amorphous diamond top layer) for types and sizes of contaminants considered to be typical in municipal and well water sources.


In some embodiments of the present invention as shown in FIG. 3 and for component 22 of FIG. 4, a thin adhesion-promoting layer 21 can be deposited on the substrate 18 and then the strengthening layer 23 on the layer 21. This layer 21 functions to improve the adhesion of the overlying strengthening layer 23 to the substrate 18. Suitable materials for the adhesion-promoting layer 21 include preferably chromium and also can include titanium, tungsten, other refractory metals, silicon, and other materials known in the art to be suitable as adhesion-promoting layers. The layer 21 can conveniently be made using the same elemental material chosen for the strengthening layer 23. The layer 21 has a thickness that is at least adequate to promote or improve the adhesion of layer 23 to the substrate 18. This thickness is generally from about 5 nm to about 200 nm, and most preferably from about 30 nm to about 60 nm. The adhesion-promoting layer 21 can be deposited by conventional vapor deposition techniques, including preferably physical vapor deposition (PVD) and also can be done by chemical vapor deposition (CVD).


PVD processes are well known and conventional and include cathodic arc evaporation (CAE), sputtering, and other conventional deposition processes. CVD processes can include low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), and thermal decomposition methods. PVD and CVD techniques and equipment are disclosed, inter alia, in J. Vossen and W. Kern “Thin Film Processes II”, Academic Press, 1991; R. Boxman et al, “Handbook of Vacuum Arc Science and Technology”, Noyes, 1995; and U.S. Pat. Nos. 4,162,954 and 4,591,418, with the patents incorporated herein by reference.


In the case of sintered ceramic materials, although the individual granules forming the sintered material may have high hardness, the scratch resistance of the overall sintered structure as measured by scratch testing is much lower than that of the material forming the granules (e.g., alumina). This is due to the fact that the materials typically used to sinter or bond the alumina granules together, typically silicates, are not as hard as the granules themselves. The hardness of the strengthening layer 23 can be similar to or even less than the hardness of the individual granules comprising the ceramic disk, and still being harder than the overall sintered ceramic structure. It has been found by experiment, for example, that the depth of the scratch caused by a stylus (radius=100 microns) sliding under a load of 30 Newtons is approximately 4-6 microns on an uncoated sintered alumina substrate, while the scratch depth on an identical substrate coated with a 3 micron thick chromium nitride strengthening layer is only 2-3 microns.


The strengthening layer 23 can be formed by conventional vapor deposition techniques including, but not limited to sputtering, cathodic arc evaporation (CAE), and CVD. The most preferred methods are sputtering, CAE, or other means which may be carried out at a relatively low temperature, thereby minimizing thermally-induced stresses in the coating stack upon cooling. If the strengthening layer 23 is deposited by CAE, it is also desirable to use macroparaticle filtering in order to control and to preserve the smoothness of the surface of the substrate 18. The strengthening layer 23 can also be formed by other well-known methods for forming hard coatings such as spray pyrolysis, sol-gel techniques, liquid-dipping with subsequent thermal treatment, nano-fabrication methods, atomic-layer deposition methods, and molecular-layer deposition methods.


The strengthening layer 23 can alternatively be formed by a process that produces a hardened surface layer on the substrate base material. Such processes include, for example, thermal oxidation, plasma nitriding, ion implantation, chemical and electrochemical surface treatments such as chemical conversion coatings, anodizing including hard anodizing and conventional post-treatments, micro-arc oxidation and case hardening. The strengthening layer 23 can also include multiple layers 24 and 25 as shown in FIG. 4, in which the layers 24 and 25 together form the strengthening layer 23. For example, the layer 24 can be an oxide thermally grown on the substrate base material while the layer 25 is a deposited material such as CrN. The strengthening layer 23 can also include more than two layers, and can preferably comprise for example a superlattice type of coating with a large number of very thin alternating layers. Such a multilayer or superlattice form of the strengthening layer 23 can also include one or multiple layers of amorphous diamond.


In the multi-layer structure of FIGS. 1-4 the amorphous diamond layer 30 is deposited over the strengthening layer 23 to form an exterior surface layer. The purpose of the amorphous diamond layer 30 is to provide a very hard wear abrasion resistant and lubricous top surface on the sliding components. Amorphous diamond is a form of non-crystalline carbon that is well known in the art, and is also sometimes referred to as tetrahedrally-bonded amorphous carbon (taC). It can be characterized as having at least 40 percent sp3 carbon bonding, a hardness of at least 45 gigaPascals and an elastic modulus of at least 400 gigaPascals. Amorphous diamond materials are described in U.S. Pat. Nos. 5,799,549 and 5,992,268, both of which are incorporated herein by reference. The amorphous diamond material layer 30 can be applied using processes including, for example, conventional filtered cathodic arc evaporation and laser ablation. The term amorphous diamond as used herein includes all forms of taC type carbon and may also contain doping or alloying elements such as nitrogen and metals, and also includes nano-structured materials containing amorphous diamond. Nano-structured materials mean herein materials having structural features on the scale of nanometers or tens of nanometers, including but not limited to superlattices


The thickness of the amorphous diamond layer 30 is at least a value effective to provide improved wear and abrasion resistance of the sliding component. This thickness is generally at least about 100 nm, preferably at least about 200 nm and more preferably at least about 300 nm. The upper thickness range of the layer 30 is determined by material characteristics, economic considerations and the need to minimize thickness-dependent intrinsic stresses in the layer 30 as discussed below. Also amorphous diamond layer 30 advantageously exhibits an extremely smooth surface topology as can be seen by reference to the photo of FIG. 5, principally because there are no individual diamond grains in an amorphous coating. In addition, the surface topography of the thin amorphous diamond layer 30 essentially replicates that of the subsurface upon which it is deposited, and therefore the amorphous diamond layer 30 has substantially the same average surface roughness as that of the subsurface. Graphitic inclusions, visible as light spots in FIG. 5, do not contribute to the surface roughness, as the term is used herein, because they are very soft and are reduced to a lubricative powder when the sliding surfaces are brought into contact. Amorphous diamond has the further advantage that it can be deposited at much lower temperatures (generally below approximately 250° C.) than polycrystalline diamond, thus eliminating the need for the thick, engineered interface layers disclosed in the prior art (see, e.g., U.S. Pat. No. 6,165,616) for relieving the thermally-induced stress in the diamond layer. These thermally induced stresses arise during cooling after deposition at the high temperatures characteristic of CVD, and are due to the difference in thermal expansion coefficient between the substrate and the diamond coating. We have found that the type of calculations disclosed in the '616 patent for determining the thickness of its thermally-induced stress relieving interface layer are not necessary for amorphous diamond films due to the low deposition temperature.


One characteristic of amorphous diamond is that it develops high intrinsic (non-thermally-induced) internal stresses, which increase as the coating thickness increases and which are predominately related to atomic bonding distortions and not to thermal expansion/contraction. While this intrinsic stress is believed to contribute to the high hardness of the material, it also limits the coating thickness since stress-induced forces tend to cause delamination of the coating from the substrate 18 (or the strengthening layer 23) above a certain thickness. Although amorphous diamond can be deposited directly on a metal, glass or iron aluminide disk (optionally with an adhesion layer), it is difficult to deposit a thick enough layer to provide adequate scratch resistance for water valve applications. Scratch resistance is important because water supplies sometimes contain abrasive contaminants due to pipeline breaks, construction, etc. The additional strengthening layer 23 of the present invention provides better support of the amorphous diamond layer 30 than does the softer substrate material, advantageously allowing a thinner layer of amorphous diamond to be used, while still obtaining improved scratch and abrasion resistance. The strengthening layer 23 can also be chosen to be a material that has a greater deposition rate and/or is less expensive to deposit than the amorphous diamond layer 30 in order to minimize overall coating cost while maintaining performance. In the most preferred embodiment, an upper thickness limit for the amorphous diamond layer 30 of around 1-2 microns can be used to avoid stress-induced delamination, while an upper thickness of around 800 nm, and more preferably around 300-500 nm, can be desirable for economic reasons while still achieving the desired performances characteristics.


Amorphous diamond is well suited to wet sliding applications in water valve applications. In particular it has been shown to have a very low coefficient of friction and also extremely low abrasion wear in water-lubricated sliding tests in which both sliding surfaces are coated with amorphous diamond. In contrast, DLC coatings are known to have higher friction coefficients higher wear rates, and to deteriorate in frictional performance with increasing humidity. A further advantage of amorphous diamond is that the relatively low deposition temperature allows a wider choice of substrate materials and minimizes or eliminates permanent thermally induced distortion of the substrate.


Regarding the low coefficient of friction reported for amorphous diamond coatings in water-lubricated sliding tests, it is thought that this may be due at least in part to graphitic inclusions (commonly called macroparticles) that are incorporated in amorphous diamond coatings made by some methods. Such graphitic inclusions can be numerous in carbon coatings deposited by cathodic arc evaporation, depending on the choice target materials and use of macroparticle filtering means as discussed below. These graphitic inclusions do not degrade the performance of the amorphous diamond coating due their softness and the small fraction of the total surface area they occupy. Rather, it is thought that they may improve performance by increasing lubricant retention between the sliding plates.


It is disclosed in U.S. Pat. No. 5,401,543 (incorporated herein by reference) that amorphous diamond coatings which are essentially free of macroparticles can be deposited by cathodic arc evaporation from a vitreous carbon or pyrolytic graphite cathode. The maximum density of macroparticles (graphitic inclusions) in such coatings, as calculated from the areal dimensions of the photographic figures and the macroparticle counts disclosed, is around 200 macroparticles per square millimeter. Such macroparticle-free amorphous diamond coatings can be used as layer 30 in the present invention, but are less-preferred than those deposited from an ordinary graphite cathode and containing substantial numbers of graphitic inclusions, such as, for example, at least about 500 per square millimeter. They are also less preferred because the required vitreous carbon or pyrolytic graphite cathodes are quite expensive compared to ordinary graphite.


The number of graphitic inclusions 40 incorporated into coatings (see FIG. 4 showing them schematically) deposited by filtered arc evaporation from an ordinary graphite cathode can be controlled according to the present invention by choosing the filter design and operating parameters so as to allow the desired number of macroparticles to be transmitted through the source. The factors influencing the transmission of macroparticles through a filter are discussed e.g., in U.S. Pat. No. 5,840,163, incorporated herein by reference. Filter designs and operating parameters are conventionally chosen to minimize the number of macroparticles transmitted through the source, however this choice also generally reduces the (desired) output of carbon ions and hence reduces the deposition rate. Contrary to this usual practice, we find that it is preferable for purposes of minimizing coating cost to choose the filter design and operating parameters so as to maximize the carbon ion output of the source (i.e. the deposition rate) without exceeding the maximum tolerable number of graphitic inclusions incorporated into the coating. The maximum tolerable number of inclusions is that number above which the performance of the coated parts deteriorates unacceptably due to the increasing fraction of the surface area occupied by the inclusions. Critical performance factors can include non-leakage of the working fluid, sliding friction coefficient, scratch and abrasion resistance, and wear life. We have found that graphitic inclusion surface densities substantially higher than 500/mm2 are tolerable, and may be beneficial as described above.


The adhesion of the amorphous diamond layer 30 to a nitride form of the strengthening layer 23 can in some cases be improved by the introduction of a carbon-containing gas, such as methane, during a short period at the end of the deposition of the strengthening layer 23. This results in a thin transition zone of carbo-nitride and/or carbide material between the strengthening layer 23 and the amorphous diamond layer 30. In other cases the adhesion can be improved by turning off all reactive gasses during a short period at the end of the deposition of the strengthening layer 23. This results in a thin metal layer between the strengthening layer 23 and the amorphous diamond layer 30. It has also been noted that the introduction of methane during the filtered-arc deposition of the amorphous diamond layer 30 increases the coating deposition rate, and can also improve the coating hardness and scratch resistance. In still other cases, for example the case in which the amorphous diamond layer 30 is to be deposited on a thermally oxidized metal surface, it can be desirable to deposit the separate adhesion-promoting layer 21 between the strengthening layer 23 and the amorphous diamond layer 30. Suitable materials for the adhesion layer 21 can include for example refractory carbide-forming metals, such as, Ti and W, and various transition metals such as Cr, and can also include carbides of those metals.


In order that the invention may be more readily understood the following examples are provided. The examples are illustrative and do not limit the invention to the particular features described.


EXAMPLE 1

Clean stainless steel valve disks are placed in a vacuum deposition chamber incorporating an arc evaporation cathode and a sputtering cathode. The arc source is fitted with filtering means to reduce macroparticle incorporation in the coating, as described for example in U.S. Pat. Nos. 5,480,527 and 5,840,163, incorporated herein by reference. Sources of argon and nitrogen are connected to the chamber through a manifold with adjustable valves for controlling the flowrate of each gas into the chamber. The sputtering cathode is connected to the negative output of a DC power supply. The positive side of the power supply is connected to the chamber wall. The cathode material is chromium. The valve disks are disposed in front of the cathode, and may be rotated or otherwise moved during deposition to ensure uniform coating thickness. The disks are electrically isolated from the chamber and are connected through their mounting rack to the negative output of a power supply so that a bias voltage may be applied to the substrates during coating.


Prior to deposition the vacuum chamber is evacuated to a pressure of 2×10e−5 Torr or less. Argon gas is then introduced at a rate sufficient to maintain a pressure of about 25 milliTorr. The valve disks are then subjected to a glow discharge plasma cleaning in which a negative bias voltage of about 500 volts is applied to the rack and valve disks. The duration of the cleaning is approximately 5 minutes.


A layer of chromium having a thickness of about 20 nm is then deposited on the valve disks by sputtering. After the chromium adhesion layer is deposited, a strengthening layer of chromium nitride having a thickness of about 3 microns is deposited by reactive sputtering.


After the chromium nitride layer is deposited, the valve disks are disposed facing the arc source, and a top amorphous diamond layer having a thickness of about 300 nm is deposited by striking an arc on the carbon electrode and exposing the substrates to the carbon plasma exiting the source outlet. A negative DC bias of about 500 volts is initially applied to the substrates to provide high-energy ion bombardment for surface cleaning and bonding improvement. After about 5 minutes at high bias voltage, the bias voltage is reduced to about 50 volts for the remainder of the deposition process. An argon pressure of about 0.5 milliTorr is maintained in the chamber during deposition. Pulsed or AC bias voltages may alternatively be employed, and a higher or lower argon may also be maintained in order to stabilize the arc source operation and optimize coating properties.


It has been found by experiment that valve disks made of stainless steel and coated according to the above example were able to withstand more than 15,000 test cycles in circulating water carrying 20 micron silica sand, while standard uncoated alumina valve disks failed under the same conditions in less than 2500 cycles.


EXAMPLE 2

Clean zirconium valve disks are placed into an air oven, heated to a temperature of 560 C, held at this temperature for about 6 hours, and cooled. A strengthening layer of zirconium oxide is thereby formed on the substrate surface, having a thickness of 5-10 microns. The disks are then placed in a vacuum deposition chamber incorporating a filtered arc evaporation cathode and a sputtering cathode. An adhesion layer of chromium having a thickness of about 20 nm is deposited on the valve disks by sputtering as described in example 1. After the chromium adhesion layer is deposited, an amorphous diamond layer is deposited as described in Example 1.


Valve disks made of zirconium and treated as described to form a multilayer structure on their surfaces were tested for scratch resistance, using a scratch tester with variable loading. The scratch depths generated on the treated Zr disks by a stylus tip having 100 micron radius under a load of 3 Newtons were around 4.7 microns deep, while those on untreated Zr disks were about 9.5 microns or more than twice as deep. Scratch test performance is believed to be a relevant predictor of scratch and abrasion resistance in field applications.


EXAMPLE 3

Clean molded-glass valve disks are placed in a vacuum deposition chamber incorporating a laser ablation source, a PECVD source, and a sputtering cathode. The valve disks are subjected to a RF (radio-frequency) discharge plasma cleaning by known means. An adhesion layer of titanium having a thickness of about 20 nm is then deposited on the valve disks by sputtering. A strengthening layer of DLC having thickness of about 3 microns is then deposited on top of the adhesion layer by PECVD using known deposition parameters. An amorphous diamond layer having thickness of about 300 nm is then deposited on top of the DLC layer by laser ablation using typical deposition parameters.


EXAMPLE 4

Clean stainless steel valve disks are placed in a vacuum chamber containing a filtered arc evaporation source and a sputtering cathode. The chamber is evacuated, nitrogen gas is introduced, a plasma discharge is established between the disks and the chamber walls, and the disk surface is plasma-nitrided according to known parameters. Nitrogen diffuses into the stainless substrates to form a surface layer harder than the bulk substrate, and the process is continued for a period of time sufficient for the layer depth to reach about 2 microns. A superlattice consisting of multiple alternating layers of carbon nitride and zirconium nitride is then deposited on the nitrided stainless steel surface by filtered arc evaporation and sputtering respectively. The alternating individual layers are about 10 nm thick, and about 100 layers of each material is deposited for a total superlattice thickness of about 2 microns. The ratio of nitrogen to carbon in the carbon nitride layers is preferably around 1.3, since carbon nitride+zirconium nitride superlattices having this N:C ratio have been shown to have primarily sp3-bonded carbon and hardness in the range of 50 gigaPascals. Carbon nitride as used herein refers to a material having a N:C ratio between about 0.1 and 1.5.


The large number of thin layers may conveniently be deposited by mounting the substrate on a rotating cylinder such that the substrates pass first in front of one deposition source and then the other, such that one pair of layers is deposited during each revolution of the cylinder. The total strengthening layer thickness is about 4 microns including the plasma-nitrided stainless steel layer. An amorphous diamond layer having thickness of about 200 nm is then deposited on top of the superlattice layer by filtered arc evaporation as described in Example 1.


The construction and arrangement of the elements shown in the preferred and other exemplary embodiments is illustrative only. Although only a few embodiments have been described in detail in this disclosure, those skilled in the art who review this disclosure will readily appreciate that many modifications are possible (e.g., variations in sizes, dimensions, structures, shapes and proportions of the various elements, values of parameters, use of materials, etc.) without materially departing from the novel teachings and advantages of the subject matter recited herein. The order or sequence of any process or method steps may be varied or re-sequenced according to alternative embodiments. Other substitutions, modifications, changes and omissions may be made in the design, operating conditions and arrangement of the preferred and other exemplary embodiments without departing from the scope of the present invention.

Claims
  • 1. A component for a fluid control valve comprising: a valve disk comprising a substrate, a titanium carbide material provided on a surface of the substrate, and a carbon layer on the titanium carbide material, the carbon layer comprising at least 40 percent tetrahedrally-bonded carbon.
  • 2. The component of claim 1, wherein the carbon layer has a thickness of at least about 100 nanometers.
  • 3. The component of claim 1, wherein the carbon layer has a coefficient of friction lower than that of diamond-like carbon.
  • 4. The component of claim 1, wherein the carbon layer further comprises a nitrogen dopant.
  • 5. The component of claim 1, wherein the carbon layer has a hardness of at least 40 gigapascals.
  • 6. The component of claim 1, wherein the carbon layer has an elastic modulus of at least 400 gigapascals.
  • 7. The component of claim 1, wherein the carbon layer has a higher hardness than the substrate.
  • 8. The component of claim 1, wherein the carbon layer has a higher hardness than diamond-like carbon.
  • 9. The component of claim 1, wherein the valve disk is configured to engage another valve disk to provide a fluid-tight seal.
  • 10. A fluid control valve comprising: a first disk in contact with a second disk, a surface of the first disk configured to slide against a surface of the second disk;a coating provided on the surface of the first disk, the coating comprising a first layer of material comprising titanium and a second layer of material provided over the first layer of material, the second layer of material being amorphous and comprising at least 40 percent tetrahedrally-bonded carbon.
  • 11. The fluid control valve of claim 10, wherein the second material further comprises nitrogen.
  • 12. The fluid control valve of claim 10, wherein the coating has a thickness greater than 100 nanometers.
  • 13. The fluid control valve of claim 10, wherein the second material has a hardness of at least about 40 gigapascals.
  • 14. The fluid control valve of claim 10, wherein the second material has an elastic modulus of at least about 400 gigapascals.
  • 15. The fluid control valve of claim 10, wherein at least one of the first disk and the second disk includes an inlet for fluid.
  • 16. The fluid control valve of claim 10, wherein the first disk includes a first inlet for hot water and a second inlet for cold water.
CROSS-REFERENCE TO RELATED PATENT APPLICATIONS

The present application is a Divisional application of U.S. patent application Ser. No. 14/021,277, filed on Sep. 9, 2013, which is a Continuation of U.S. patent application Ser. No. 12/641,008, filed Dec. 17, 2009 (now U.S. Pat. No. 8,555,921), which is a Continuation-In-Part of U.S. patent application Ser. No. 12/141,848, filed Jun. 18, 2008 (now U.S. Pat. No. 7,866,343), which is a Continuation-in-Part of U.S. patent application Ser. No. 11/732,948 filed Apr. 5, 2007 (now U.S. Pat. No. 7,445,026), which is a Continuation of U.S. patent application Ser. No. 11/201,395 filed Aug. 10, 2005 (now U.S. Pat. No. 7,216,661), which is a Continuation of U.S. patent application Ser. No. 10/741,848 filed Dec. 18, 2003 (now U.S. Pat. No. 6,935,618), which is a Continuation of U.S. patent application Ser. No. 10/322,871 filed Dec. 18, 2002 (now U.S. Pat. No. 6,904,935). This application (as well as U.S. patent application Ser. Nos. 14/021,277, 12/641,008 and 12/141,848) is also a Continuation-in-Part of U.S. patent application Ser. No. 11/784,765 filed Apr. 9, 2007 (now U.S. Pat. No. 7,866,342), which is a Continuation-In-Part of U.S. patent application Ser. No. 11/201,395 filed Aug. 10, 2005 (now U.S. Pat. No. 7,216,661), which is a Continuation of U.S. patent application Ser. No. 10/741,848 filed Dec. 18, 2003 (now U.S. Pat. No. 6,935,618), which is a Continuation of U.S. patent application Ser. No. 10/322,871, filed Dec. 18, 2002 (now U.S. Pat. No. 6,904,935). The entire disclosures for each of the preceding and following U.S. patent applications (and any patents granted thereon) are incorporated herein by reference in their entirety: U.S. patent application Ser. No. 10/322,871; U.S. patent application Ser. No. 10/741,848; U.S. patent application Ser. No. 11/201,395; U.S. patent application Ser. No. 11/732,948; U.S. patent application Ser. No. 11/784,765; and U.S. patent application Ser. No. 12/141,848.

US Referenced Citations (479)
Number Name Date Kind
2020286 Bittle Nov 1935 A
2411867 Brenner Dec 1946 A
2639116 Green May 1953 A
2793282 Steigerwald May 1957 A
2861166 Cargill Nov 1958 A
2947610 Hall et al. Aug 1960 A
2968723 Steigerwald Jan 1961 A
RE25105 Cargill, Jr. Dec 1961 E
3141746 De Lai Jul 1964 A
3173175 Lemelson Mar 1965 A
3207582 Inoue Sep 1965 A
3346458 Schmidt Oct 1967 A
3371404 Lemelson Mar 1968 A
3384119 Manoogian May 1968 A
3504063 Lemelson Mar 1970 A
3607061 Angus Sep 1971 A
3615208 Byron Oct 1971 A
3630677 Angus Dec 1971 A
3630678 Gardner Dec 1971 A
3630679 Angus Dec 1971 A
3635811 Lane Jan 1972 A
3667503 Farrell et al. Jun 1972 A
3702573 Nemeth Nov 1972 A
3714332 Estes et al. Jan 1973 A
3747638 Manoogian et al. Jul 1973 A
3766914 Jacobs Oct 1973 A
3794026 Jacobs Feb 1974 A
3813296 Mcstrack et al. May 1974 A
3829969 Fischbein et al. Aug 1974 A
3840451 Golyanov et al. Oct 1974 A
3854493 Farrell Dec 1974 A
3879175 Maurice Apr 1975 A
3912500 Vereschagin et al. Oct 1975 A
3913280 Hall Oct 1975 A
3916506 Wolf Nov 1975 A
3929432 Caveney Dec 1975 A
3934612 Kast Jan 1976 A
3941903 Tucker Mar 1976 A
3953178 Engel Apr 1976 A
3959557 Berry May 1976 A
3965935 Morisseau Jun 1976 A
4006540 Lemelson Feb 1977 A
4018241 Sodal et al. Apr 1977 A
4029368 Tschirky et al. Jun 1977 A
4054426 White Oct 1977 A
4084942 Villalobos Apr 1978 A
4104441 Fedoseev et al. Aug 1978 A
4115156 Straumann Sep 1978 A
4162954 Morrison Jul 1979 A
4173522 Pulker et al. Nov 1979 A
4183377 Bernat Jan 1980 A
4190301 Lachonius et al. Feb 1980 A
4228142 Holcombe et al. Oct 1980 A
4241135 Lee et al. Dec 1980 A
4260203 Garner Apr 1981 A
4325403 Uhlmann Apr 1982 A
4327758 Uhlmann May 1982 A
4345798 Cortes Aug 1982 A
4367130 Lemelson Jan 1983 A
4378029 Parkison Mar 1983 A
4385880 Lemelson May 1983 A
4387287 Marazzi Jun 1983 A
4394400 Green et al. Jul 1983 A
4410054 Nagel et al. Oct 1983 A
4434188 Kamo et al. Feb 1984 A
4457491 Dudman Jul 1984 A
4468138 Nagel Aug 1984 A
4490229 Mirtich et al. Dec 1984 A
4492845 Kljuchko et al. Jan 1985 A
4504519 Lelez Mar 1985 A
4509519 Detsch Apr 1985 A
4524106 Flasck Jun 1985 A
4531273 Smith et al. Jul 1985 A
4532149 McHargue Jul 1985 A
4540636 Iver et al. Sep 1985 A
4554208 MacIver et al. Nov 1985 A
RE32106 Lemelson Apr 1986 E
4591418 Snyder May 1986 A
4594294 Eichen et al. Jun 1986 A
4597844 Hiraki et al. Jul 1986 A
4610577 Spensberger Sep 1986 A
4618505 MacIver et al. Oct 1986 A
4620601 Nagel Nov 1986 A
4621031 Scruggs Nov 1986 A
4661213 Dorsett et al. Apr 1987 A
4663183 Ovshinsky et al. May 1987 A
4666318 Harrison May 1987 A
4696829 Legg Sep 1987 A
4698256 Giglia et al. Oct 1987 A
4702808 Lemelson Oct 1987 A
4707384 Schachner et al. Nov 1987 A
4708496 McPherson Nov 1987 A
4708888 Mitchell et al. Nov 1987 A
4714660 Gates Dec 1987 A
4720199 Geczy et al. Jan 1988 A
4720349 Kobayashi et al. Jan 1988 A
4720918 Curry et al. Jan 1988 A
4724058 Morrison Feb 1988 A
4725345 Sakamoto et al. Feb 1988 A
4729440 Hall Mar 1988 A
4732364 Seger et al. Mar 1988 A
4732491 Geczy Mar 1988 A
4734339 Schachner et al. Mar 1988 A
4755237 Lemelson Jul 1988 A
4756631 Jones Jul 1988 A
4761217 Dorsett et al. Aug 1988 A
4764036 McPherson Aug 1988 A
4764434 Aronsson et al. Aug 1988 A
4767608 Matsumoto et al. Aug 1988 A
4776862 Wiand Oct 1988 A
4778730 Zucker Oct 1988 A
4783368 Yamamoto et al. Nov 1988 A
4797009 Yamazaki Jan 1989 A
4810584 Yu-Zhong Mar 1989 A
4816286 Hirose Mar 1989 A
4816291 Desphandey et al. Mar 1989 A
4816682 Levitt et al. Mar 1989 A
4822355 Bhuvaneshwar Apr 1989 A
4822466 Rabalais et al. Apr 1989 A
4824262 Kamigaito et al. Apr 1989 A
4832075 Dubach May 1989 A
4832993 Coulon May 1989 A
4837089 Araki et al. Jun 1989 A
4842937 Meyer et al. Jun 1989 A
4842945 Ito et al. Jun 1989 A
4848199 Kelm Jul 1989 A
4849199 Pinneo Jul 1989 A
4849290 Fujimori et al. Jul 1989 A
4858556 Siebert Aug 1989 A
4859493 Lemelson Aug 1989 A
4871581 Yamazaki Oct 1989 A
4874596 Lemelson Oct 1989 A
4882138 Pinneo Nov 1989 A
4889195 Kruger et al. Dec 1989 A
4892420 Kruger Jan 1990 A
4900628 Ikegaya et al. Feb 1990 A
4902535 Garg et al. Feb 1990 A
4904542 Mroczkowski Feb 1990 A
4919974 McCune et al. Apr 1990 A
4933058 Bache et al. Jun 1990 A
4935303 Ikoma et al. Jun 1990 A
4935313 Knapp et al. Jun 1990 A
4938940 Hirose et al. Jul 1990 A
4940015 Kobashi et al. Jul 1990 A
4948629 Hacker et al. Aug 1990 A
4950543 Winter et al. Aug 1990 A
4960643 Lemelson Oct 1990 A
4961958 Desphandey et al. Oct 1990 A
4966789 Knapp et al. Oct 1990 A
4968326 Wiand Nov 1990 A
4973494 Yamazaki Nov 1990 A
4974498 Lemelson Dec 1990 A
4985229 Obitsu et al. Jan 1991 A
4987007 Wagal et al. Jan 1991 A
4991822 Enke Feb 1991 A
4992298 Deutchman et al. Feb 1991 A
4997636 Prins Mar 1991 A
5006203 Purdes Apr 1991 A
5009923 Ogata et al. Apr 1991 A
5021628 Lemelson Jun 1991 A
5024977 Friederich et al. Jun 1991 A
5032243 Bache et al. Jul 1991 A
5036733 Tiholiz et al. Aug 1991 A
5037212 Justman et al. Aug 1991 A
5037522 Vergason Aug 1991 A
5040501 Lemelson Aug 1991 A
5046703 Kamiyama et al. Sep 1991 A
5055318 Deutchman et al. Oct 1991 A
5064682 Kiyama et al. Nov 1991 A
5067826 Lemelson Nov 1991 A
5068148 Nakahara et al. Nov 1991 A
5070274 Yoshikawa et al. Dec 1991 A
5075094 Morrish et al. Dec 1991 A
5082359 Kirkpatrick Jan 1992 A
5088202 Boland et al. Feb 1992 A
5094915 Subramaniam Mar 1992 A
5096352 Lemelson Mar 1992 A
5098737 Collins et al. Mar 1992 A
5100565 Fujiwara et al. Mar 1992 A
5104634 Calcote Apr 1992 A
5114696 Purdes May 1992 A
5114745 Jones May 1992 A
5124179 Garg et al. Jun 1992 A
5126274 McIver et al. Jun 1992 A
5127983 Imai et al. Jul 1992 A
5129289 Boland et al. Jul 1992 A
5131941 Lemelson Jul 1992 A
5132105 Remo Jul 1992 A
5132587 Lemelson Jul 1992 A
5135808 Kimock et al. Aug 1992 A
5135941 Djuric et al. Aug 1992 A
5137398 Omori et al. Aug 1992 A
5139621 Alexander et al. Aug 1992 A
5142785 Grewal et al. Sep 1992 A
5158695 Yashchenko et al. Oct 1992 A
5161728 Li Nov 1992 A
5164051 Komaki et al. Nov 1992 A
5165955 Gentle Nov 1992 A
5170993 Bonetti Dec 1992 A
5171607 Cumbo Dec 1992 A
5185179 Yamazaki et al. Feb 1993 A
5190823 Anthony et al. Mar 1993 A
5205188 Repenning et al. Apr 1993 A
5224969 Chen et al. Jul 1993 A
5225366 Yoder Jul 1993 A
5227196 Itoh Jul 1993 A
5232568 Parent et al. Aug 1993 A
5237967 Willermet et al. Aug 1993 A
5239746 Goldman Aug 1993 A
5242741 Sugiyama et al. Sep 1993 A
5245104 Cullick Sep 1993 A
5246035 Skyllingstad et al. Sep 1993 A
5249554 Tamor et al. Oct 1993 A
5255929 Lemelson Oct 1993 A
5257558 Farzin-Nia et al. Nov 1993 A
5260141 Tsai et al. Nov 1993 A
5279723 Falabella et al. Jan 1994 A
5281274 Yoder Jan 1994 A
5284394 Lemelson Feb 1994 A
5288556 Lemelson Feb 1994 A
5295305 Hahn et al. Mar 1994 A
5296274 Movchan et al. Mar 1994 A
5300942 Dolgoff Apr 1994 A
5314652 Simpson et al. May 1994 A
5322735 Fridez et al. Jun 1994 A
5332348 Lemelson Jul 1994 A
5338027 Rehkemper et al. Aug 1994 A
5349265 Lemelson Sep 1994 A
5352493 Dorfman et al. Oct 1994 A
5360227 Lemelson Nov 1994 A
5364192 A et al. Nov 1994 A
5366556 Prince et al. Nov 1994 A
5370195 Keshavan et al. Dec 1994 A
5382293 Kawarada et al. Jan 1995 A
5388027 Pollock et al. Feb 1995 A
5391407 Dearnaley Feb 1995 A
5391409 Shibata et al. Feb 1995 A
5392982 Li Feb 1995 A
5393572 Dearnaley Feb 1995 A
5395221 Tucker et al. Mar 1995 A
5397347 Cuilleron et al. Mar 1995 A
5401543 Storer Mar 1995 A
5403399 Kurihara et al. Apr 1995 A
5405645 Sevillano et al. Apr 1995 A
5411797 Davanloo et al. May 1995 A
5415704 Davidson May 1995 A
5437243 Pike-Biegunski Aug 1995 A
5441013 Jeng et al. Aug 1995 A
5449569 Schumm Sep 1995 A
5451307 Bennett et al. Sep 1995 A
5456406 Lemelson Oct 1995 A
5462722 Liu et al. Oct 1995 A
5462772 Lemelson Oct 1995 A
5462776 Gruen Oct 1995 A
5474816 Falabella Dec 1995 A
5476693 Lee et al. Dec 1995 A
5478650 Davanloo et al. Dec 1995 A
5480527 Welty Jan 1996 A
5529805 Iacovangelo et al. Jun 1996 A
5529815 Lemelson Jun 1996 A
5533347 Ott et al. Jul 1996 A
5541003 Nakayama et al. Jul 1996 A
5541016 Schumm Jul 1996 A
5543684 Kumar et al. Aug 1996 A
5549764 Biltgen et al. Aug 1996 A
5551903 Kumar et al. Sep 1996 A
5552675 Lemelson Sep 1996 A
5554415 Turchan et al. Sep 1996 A
5571616 Phillips et al. Nov 1996 A
5589232 Simpson Dec 1996 A
5593234 Liston Jan 1997 A
5601966 Kumar et al. Feb 1997 A
5602679 Dolgoff et al. Feb 1997 A
5605759 Prince et al. Feb 1997 A
5609683 Pike-Biegunski Mar 1997 A
5616372 Conley et al. Apr 1997 A
5616373 Kamer et al. Apr 1997 A
5620745 Simpson Apr 1997 A
5626908 Iio et al. May 1997 A
5626963 Hirano et al. May 1997 A
5628881 Lemelson May 1997 A
5629086 Hirano et al. May 1997 A
5633087 Simpson May 1997 A
5643423 Kimock et al. Jul 1997 A
5644130 Raatz Jul 1997 A
5645601 Pope et al. Jul 1997 A
5645900 Ong et al. Jul 1997 A
5648620 Stenzel et al. Jul 1997 A
5662965 Deguchi et al. Sep 1997 A
5669144 Hahn et al. Sep 1997 A
5677051 Ueda et al. Oct 1997 A
5679404 Patten et al. Oct 1997 A
5688557 Lemelson et al. Nov 1997 A
5688677 Ebert et al. Nov 1997 A
5705271 Okamura et al. Jan 1998 A
5707409 Martin et al. Jan 1998 A
5713333 Cooper et al. Feb 1998 A
5714202 Lemelson et al. Feb 1998 A
5718948 Ederyd et al. Feb 1998 A
5718976 Dorfman et al. Feb 1998 A
5725573 Dearnaley et al. Mar 1998 A
5728465 Dorfman et al. Mar 1998 A
5731045 Dearnaley et al. Mar 1998 A
5740941 Lemelson Apr 1998 A
5743957 Kobashi Apr 1998 A
5747118 Bunshah et al. May 1998 A
5747120 William et al. May 1998 A
5750207 Hammond et al. May 1998 A
5755261 Fukuzawa et al. May 1998 A
5759623 Mello et al. Jun 1998 A
5763072 Kato et al. Jun 1998 A
5763087 Falabella Jun 1998 A
5780119 Dearnaley et al. Jul 1998 A
5786038 Conley et al. Jul 1998 A
5786068 Dorfman et al. Jul 1998 A
5794801 Lemelson Aug 1998 A
5799549 Decker et al. Sep 1998 A
5803967 Plano et al. Sep 1998 A
5824367 Park et al. Oct 1998 A
5827613 Nakayama et al. Oct 1998 A
5829735 Ikeda Nov 1998 A
5836905 Lemelson et al. Nov 1998 A
5837322 Moran et al. Nov 1998 A
5837331 Menu et al. Nov 1998 A
5837394 Schumm Nov 1998 A
5840132 Erdemir et al. Nov 1998 A
5840163 Welty Nov 1998 A
5849413 Zhu et al. Dec 1998 A
5853839 Schmeisser Dec 1998 A
5858471 Ray et al. Jan 1999 A
5863606 Okamura et al. Jan 1999 A
5866195 Lemelson Feb 1999 A
5871805 Lemelson Feb 1999 A
5874175 Li Feb 1999 A
5888638 Kleinhans et al. Mar 1999 A
5897942 Kamer et al. Apr 1999 A
5900982 Dolgoff et al. May 1999 A
5902563 Pinneo May 1999 A
5925413 Holzer et al. Jul 1999 A
5925422 Vandenbulcke et al. Jul 1999 A
5927325 Bensaoula et al. Jul 1999 A
5927727 Wagner et al. Jul 1999 A
5932302 Yamazaki et al. Aug 1999 A
5934321 Miya et al. Aug 1999 A
5935323 Tanga et al. Aug 1999 A
5940975 Decker et al. Aug 1999 A
5945656 Lemelson et al. Aug 1999 A
5952102 Cutler Sep 1999 A
5955212 Matsumoto et al. Sep 1999 A
5961719 Buhaenko et al. Oct 1999 A
5972233 Becker et al. Oct 1999 A
5985451 Senda et al. Nov 1999 A
5992268 Decker et al. Nov 1999 A
6045916 Shimamura et al. Apr 2000 A
6063455 Jeong et al. May 2000 A
6066399 Hirano et al. May 2000 A
6080376 Lida et al. Jun 2000 A
6080445 Sugiyama et al. Jun 2000 A
6080470 Dorfman Jun 2000 A
6083570 Lemelson et al. Jul 2000 A
6096377 Karner et al. Aug 2000 A
6099639 Thomas Aug 2000 A
6099976 Lemelson et al. Aug 2000 A
6103305 Friedmann et al. Aug 2000 A
6110240 Saguchi et al. Aug 2000 A
6131603 Takano et al. Oct 2000 A
6136386 Nakahigashi et al. Oct 2000 A
6139964 Sathrum et al. Oct 2000 A
6165616 Lemelson et al. Dec 2000 A
6186768 Schmitt Feb 2001 B1
6197438 Faulkner Mar 2001 B1
6203865 Badzian et al. Mar 2001 B1
6204595 Falabella Mar 2001 B1
6207281 Itoh Mar 2001 B1
6207282 Deguchi et al. Mar 2001 B1
6231956 Brenner et al. May 2001 B1
6248434 Westphal et al. Jun 2001 B1
6250604 Robert Jun 2001 B1
6261421 Meunier et al. Jul 2001 B1
6287682 Grab et al. Sep 2001 B1
6299425 Hirano et al. Oct 2001 B1
6302768 Adachi Oct 2001 B1
6305416 Snel et al. Oct 2001 B1
6314763 Sakamoto Nov 2001 B1
6314764 Sakamoto Nov 2001 B1
6331332 Wang Dec 2001 B1
6342195 Roy et al. Jan 2002 B1
6342755 Russ et al. Jan 2002 B1
6347905 Lukschandel Feb 2002 B1
6368664 Veerasamy et al. Apr 2002 B1
6368676 Gaudreau et al. Apr 2002 B1
6387443 Shi et al. May 2002 B1
6387502 Okamura et al. May 2002 B1
6395333 Veerasamy May 2002 B2
6406760 Shepard Jun 2002 B1
6410125 Brenner et al. Jun 2002 B1
6423193 Miller et al. Jul 2002 B1
6447843 Olson Sep 2002 B1
6453946 Nichols et al. Sep 2002 B2
6462467 Russ Oct 2002 B1
6471408 Ikeda et al. Oct 2002 B1
6478887 Sue et al. Nov 2002 B1
6503380 Buehler Jan 2003 B1
6508416 Mastro et al. Jan 2003 B1
6508453 Mamyo Jan 2003 B2
6514565 Dearnaley et al. Feb 2003 B2
6517902 Drake et al. Feb 2003 B2
6537429 Daugherty et al. Mar 2003 B2
6537688 Silvernail et al. Mar 2003 B2
6544627 Vijayen et al. Apr 2003 B1
6548173 Erdemir et al. Apr 2003 B2
6558757 Scheibe et al. May 2003 B1
6572936 Domoto et al. Jun 2003 B1
6609367 Nakayasu et al. Aug 2003 B2
6610360 Petrmichl et al. Aug 2003 B2
6634619 Cusac et al. Oct 2003 B2
6638570 Veerasamy Oct 2003 B2
6641861 Saito et al. Nov 2003 B2
6656444 Pinneo Dec 2003 B1
6663753 Veerasamy et al. Dec 2003 B2
6696157 David et al. Feb 2004 B1
6720035 Pujol et al. Apr 2004 B2
6793849 Gruen et al. Sep 2004 B1
6802457 Campion et al. Oct 2004 B1
6895991 Woessner May 2005 B2
6902809 Mittendorf Jun 2005 B1
6904935 Welty et al. Jun 2005 B2
6916004 Suzuki Jul 2005 B2
6921469 Larsen Jul 2005 B2
6935618 Welty et al. Aug 2005 B2
7004197 Gilbert Feb 2006 B2
7106939 LaBrake et al. Sep 2006 B2
7108012 Rosko et al. Sep 2006 B2
7143782 Bantleon et al. Dec 2006 B2
7144753 Swain et al. Dec 2006 B2
7172142 Taylor et al. Feb 2007 B2
7195817 Lev et al. Mar 2007 B2
7214600 Won et al. May 2007 B2
7216661 Welty et al. May 2007 B2
7246586 Hosenfeldt et al. Jul 2007 B2
7273536 Shibata et al. Sep 2007 B2
7309446 Kley Dec 2007 B1
7445026 Welty et al. Nov 2008 B2
7866342 Brondum et al. Jan 2011 B2
7866343 Brondum et al. Jan 2011 B2
20010020693 Bischofberger et al. Sep 2001 A1
20010035516 Nichols et al. Nov 2001 A1
20020028289 Veerasamy Mar 2002 A1
20020071949 Liu et al. Jun 2002 A1
20020127404 Veerasamy Sep 2002 A1
20020192371 Veerasamy et al. Dec 2002 A1
20030099835 Petrmichl et al. May 2003 A1
20030170464 Veerasamy Sep 2003 A1
20040038033 Massler et al. Feb 2004 A1
20040058155 Windischmann Mar 2004 A1
20040067362 Veerasamy et al. Apr 2004 A1
20040069358 Knapp et al. Apr 2004 A1
20040118455 Welty et al. Jun 2004 A1
20050241239 Sung Nov 2005 A1
20060005900 Dorfman Jan 2006 A1
20060038156 Welty et al. Feb 2006 A1
20060059688 Tseng et al. Mar 2006 A1
20060079863 Burgmeier et al. Apr 2006 A1
20060105172 Yamamoto et al. May 2006 A1
20060150862 Zhao et al. Jul 2006 A1
20060236780 Hofmann Oct 2006 A1
20070074664 Nishimura et al. Apr 2007 A1
20070181843 Welty et al. Aug 2007 A1
20070224242 Helmuth et al. Sep 2007 A1
20070278444 Brondum et al. Dec 2007 A1
20070284255 Gorokhovsky et al. Dec 2007 A1
20080011976 Scarlin Jan 2008 A1
20080044451 Steinmuller-Nethl et al. Feb 2008 A1
20080070049 Guo et al. Mar 2008 A1
20080073505 Niu et al. Mar 2008 A1
20080315146 Brondum et al. Dec 2008 A1
20090186206 Ito et al. Jul 2009 A1
20100252130 Brondum et al. Oct 2010 A1
20110011476 Brondum Jan 2011 A1
Foreign Referenced Citations (47)
Number Date Country
683844 May 1994 CH
1729368 Feb 2006 CN
101432462 May 2009 CN
3728946 Mar 1989 DE
0265533 May 1988 EP
0361206 Apr 1990 EP
0207467 Dec 1990 EP
0509630 Oct 1992 EP
0509875 Oct 1992 EP
0520567 Dec 1992 EP
0462734 Sep 1993 EP
0318998 Oct 1993 EP
0388861 Sep 1994 EP
0440326 Dec 1994 EP
0378378 Jan 1995 EP
0676902 Oct 1995 EP
0520566 Mar 1996 EP
0520832 Mar 1996 EP
0605814 Sep 1996 EP
0611331 Jun 1997 EP
0826798 Mar 1998 EP
0632344 Jul 1998 EP
0884509 Dec 1998 EP
0603422 May 2000 EP
0519472 Mar 2002 EP
0730129 Mar 2003 EP
0892092 Oct 2003 EP
2083095 Jul 2009 EP
57106513 Jul 1982 JP
60195094 Oct 1985 JP
61106494 May 1986 JP
61124573 Jun 1986 JP
6272921 Apr 1987 JP
62196371 Aug 1987 JP
223190 Oct 1991 JP
04165170 Jun 1992 JP
2295084 Mar 2007 RU
1986006758 Nov 1986 WO
1987004471 Jul 1987 WO
1990005701 May 1990 WO
1992001314 Jan 1992 WO
1992015082 Sep 1992 WO
1993009921 May 1993 WO
1994007613 Apr 1994 WO
1996001913 Jan 1996 WO
2005015065 Aug 2005 WO
2007020139 Feb 2007 WO
Non-Patent Literature Citations (83)
Entry
Aksenov et al., High-efficiency Source of pure carbon plasma, Sov. Phys. Tech. Phys., Sep. 1980, pp. 1164-1166, vol. 25(9).
Angus et al., Low-Pressure, Metastable Growth of Diamond and “Diamondlike” Phases, Structure and Properties of Diamond, Aug. 19, 1988, pp. 913-921.
Bakal et al., Structure of carbon films formed by the deposition of fast ions, Sov. Phys. Tech. Phys, Nov. 1981, pp. 1425-1426, vol. 26(11).
Berger et al., EELS analysis of vacuum arc-deposited diamond-like films, CSIRO, Division of Applied Physics, Philosophical Magazine Letters, 1988, pp. 285-290, vol. 57, No. 6, Lindfield, New South Wales, 2070 Australia.
Cheung et al., Growth of Thin Films by Laser-Induced Evaporation, 1988, pp. 63-109 plus back page (47 total pages), vol. 15, Issue 1.
Chinese Patent Office, Chinese Office Action for Chinese Patent Application No. 201110237454.7, dated May 9, 2013, 12 pages.
Coll et al., Diamond-like carbon films synthesized by cathodic arc evaporation, Thin Solid Films, 1992, pp. 165-173, vol. 209.
Collins et al., “Laser plasma source of amorphic diamond,” Applied Physics Letters, Jan. 16, 1989, 4 pages, vol. 54, No. 3.
Collins et al., Microstructural and Mechanical Properties of Amorphic Diamond, Diamond Files and Technology, 1992, pp. 25-50, vol. 2, No. 1, MY Tokyo.
Cuomo et al., Energetic Carbon Deposition at Oblique Angles, J. Vac. Sci. Technol, A., Nov./Dec. 1992, 7 pages, vol. 10, No. 6, ISSN 0734-2101, Coden JVTAD6, Society by the American Institute of Physics.
European Search Report for European Application No. 08005755, date of completion, Jun. 21, 2010, 6 pages.
European Search Report for European Application No. 09160427.2, dated Aug. 24, 2009, 5 pages.
European Search Report for European Application No. 11177721.5, date of completion Nov. 28, 2011, 9 pages.
Extended European Search Report for European Application No. 10184285.4, completed Aug. 30, 2011, 5 pages.
Falabella et al., Fabrication of Amorphous Diamond Films, Thin Solid Films, 1993, pp. 82-86 (5 pages), vol. 236.
Feldman et al., Diamond Optics II, Proceedings—SPIE—The International Society for Optical Engineering, Spie P Proceeding Series, Aug. 7-8, 1989, pp. 37-47 plus cover pp. (13 total pages), vol. 1146, San Diego, California.
Grill A: “Diamond-Like Carbon: State of the Art”, Diamond and Related Materials, Elsevier Science Publishers, Amsterdam, Netherlands, vol. 8, No. 2-5, Mar. 1, 1999, pp. 428-434.
Hirvonen et al., Preparation and Properties of High Density, Hydrogen Free Hard Carbon Films with Direct ION Beam or ARC Discharge Deposition, Materials Science Forum, 1989, pp. 197-216,, vols. 52 & 53, University of Helsinki, Department of Physics, SF-00170 Helsinki, Finland.
International Preliminary Report on Patentability for International Application No. PCT/US03/46081, date of completion of report Aug. 6, 2006, 3 pages.
International Search Report for PCT/US03/040681, dated Feb. 22, 2005, 1 page.
Kitabatake et al., Growth of diamond at room temperature by an ion-beam sputter deposition under hydrogen-ion bombardment, J. Appl. Phys., Aug. 15, 1985, pp. 1693-1695, vol. 58(4).
Kitahama et al., Synthesis of diamond by laser-induced chemical vapor desposition, Appl. Phys. Lett., Sep. 15, 1986, pp. 634-635, vol. 49(11).
Marquardt et al., Deposition of Amorphous Carbon Films from Laser-Produced Plasmas, Mat. Res. Symp. Proc., Materials Research Society, 1985, pp. 326-335 plus cover page (11 total pages), vol. 38.
Martin et al., ION-Beam-Deposited Films Produced by Filtered ARC Evaporation, Thin Solid Films, 1990, pp. 77-83, vol. 193/194.
Martin et al., Structure and hardness of diamond-like carbon films prepared by arc evaporation, Journal of Materials Science Letters 7, 1988, pp. 410-412.
Maslov et al., Pulsed Carbon-Plasma Source for Production Processes, UDC 533.9.07, 1985, pp. 662-665, Plenum Publishing Corporation.
Messier et al., From Diamond-Like Carbon to Diamond Coatings, Thin Solid Films, 1987, pp. 1-9.
Milne, Tetrahedrally Bonded Amorphous Carbon, Journal of Non-Crystalline Solids, 1996, 8 pages.
Mirtich et al., “Diamondlike Carbon Protective Coatings for IR Materials,” 1985, 14 pages.
Mirtich et al., Diamond-like Carbon Protective Coatings for IR Materials, 14 pages.
Notice of Allowance for U.S. Appl. No. 11/784,765, dated Oct. 12, 2010, 7 pages.
Notice of Allowance for U.S. Appl. No. 12/141,848, dated Sep. 28, 2010, 7 pages.
Notice of Allowance for U.S. Appl. No. 10/741,848, dated Apr. 26, 2005, 8 pages.
Notice of Allowance for U.S. Appl. No. 11/201,395, dated Jan. 12, 2007, 4 pages.
Notice of Allowance for U.S. Appl. No. 11/322,871 dated Sep. 24, 2009, 11 pages.
Notice of Allowance for U.S. Appl. No. 11/732,948, dated Jun. 30, 2008, 7 pages.
Office Action for Canadian Application No. 2510168, dated Jan. 2, 2007, 12 pages.
Office Action for Canadian Application No. 2510168, dated Oct. 11, 2007, 12 pages.
Office Action for Chinese Application No. 2003800106691.3 with English translation, dated Oct. 27, 2006, 12 pages.
Action for Chinese Application No. 200710153717 with English translation, dated Jul. 31, 2009, 11 pages.
Office Action for Chinese Application No. 200710153719.9 (English translations), dated Jun. 5, 2009, 2007, 4 pages.
Office for Chinese Application No. 200710153719.9, dated Apr. 6, 2010, 3 pages.
Office Action for Chinese Application No. 200810090600.6 and translation, dated Aug. 4, 2010, 13 pages.
Office Action for Chinese Application No. 200810090600.6 and translation, dated Jan. 29, 2010, 12 pages.
Office Action for European Application No. 03816756.5, dated Nov. 12, 2007, 4 pages.
Office Action for Indian Application No. 1391/KOLNP/05, date received Aug. 14, 2009, 20 pages.
Office Action for Mexican Application No. MX/a/2007/015120, dated May 7, 2010, 2 pages.
Office Action for Mexican Application No. PA/a/2005/0064.02, dated Aug. 14, 2007, 2 pages.
Office Action for Russian Application No. 2009122558, dated Jun. 15, 2009, 2 pages.
Office Action for U.S. Appl. No. 10/741,848, dated Feb. 15, 2005, 6 pages.
Office Action for U.S. Appl. No. 10/741,848, dated May 14, 2004, 5 pages.
Office Action for U.S. Appl. No. 10/741,848, dated Oct. 1, 2004, 5 pages.
Office Action for U.S. Appl. No. 11/201,395, dated Jan. 26, 2006, 6 pages.
Office Action for U.S. Appl. No. 11/201,395, dated Sep. 26, 2006, 10 pages.
Office Action for U.S. Appl. No. 11/322,871, dated Mar. 12, 2004, 5 pages.
Office Action of Mexican Application No. MX/a/2007/015120, dated May 7, 2010, 2 pages.
Office Action of Mexican Application No. MX/a/2007/015121, dated May 7, 2010, 2 pages.
Perlow et al., Applied Physics Letters, CODEN: APPLAB, pp. 215-218, ISSN: 0003-6951.
Response to Office Action for Canadian Application No. 2510168, dated Apr. 2, 2008, 6 pages.
Response to Office Action for Canadian Application No. 2510168, dated Jul. 3, 2007, 17 pages.
Response to Office Action for Canadian Application No. 2510168, dated Mar. 31, 2008.
Response to Office Action for Chinese Application No. 2007/10153719.9, dated Jun. 4, 2010, 6 pages.
Response to Office Action for Chinese Application No. 200710153719.9 with English translation, dated Oct. 20, 2009, 18 pages.
Response to Office Action for European Application No. 03816756.5, dated Mar. 19, 2008, 17 pages.
Response to Office Action for European Application No. 03816756.5, dated Mar. 25, 2008, 16 pages.
Response to Office Action for Indian Application No. 1391/KOLNP/05, dated Apr. 28, 2008, 29 pages.
Response to Office Action for U.S. Appl. No. 10/741,848, dated Jan. 3, 2005, 14 pages.
Response to Office Action for U.S. Appl. No. 10/741,848, dated Mar. 8, 2005, 8 pages.
Response to Office Action for U.S. Appl. No. 11/201,395, dated May 23, 2006, 20 pages.
Response to Office Action for U.S. Appl. No. 11/201,395, dated Oct. 20, 2006, 14 pages.
Response to Office Action for U.S. Appl. No. 11/322,871, dated Jul. 8, 2004, 15 pages.
Response to Restriction Requirement for U.S. Appl. No. 11/784,765, dated Apr. 14, 2010, 8 pages.
Response to Restriction Requirement for U.S. Appl. No. 11/784,765, dated Jul. 26, 2010, 7 pages.
Restriction Requirement for U.S. Appl. No. 11/784,765, dated Mar. 25, 2010, 7 pages.
Richter et al., About the Structure and Bonding of Laser Generated Carbon Films by Raman and Electron Energy Loss Spectroscopy, Journal of Non-Crystalline Solide, 1986, pp. 131-144, vol. 88, North-Holland, Amsterdam.
Robertson, Amorphouse Carbon, Current Opinion in Solid State & Materials Science, 1996, 6 pages, ISSN 1359-0286.
Sato et al., Deposition of Diamond-Like Carbon Films by Pulsed-Laser Evaporation, Department of Electrical and Electronic Engineering, Aug. 17, 1987, pp. L1487-L1488.
Sato et al., Diamond-Like Carbon Films Prepared by Pulsed-Laser Evaporation, Applied Physics A © Springer-Verlag, 1988, pp. 355-360.
Strel'nitskii et al., Properties of diamond-like carbon coating produced by plasma condensation, Sov. Tech. Phys. Lett., Nov. 1978, pp. 546-547, vol. 4(11).
Strel'nitskii et al., Properties of the diamond-like carbon film produced by the condensation of a plasma stream with an rf potential, Sov. Phys. Tech. Phys., Feb. 1978, pp. 222-224, vol. 23(2).
Supplemental Notice of Allowance for U.S. Appl. No. 11/201,395, dated Feb. 6, 2007, 3 pages.
Supplementary European Search Report for European Application No. 03816756, date of completion Aug. 2, 2007, 2 pages.
Written Opinion for International Application No. PCT/US03/46081, dated May 15, 2006, 4 pages.
Related Publications (1)
Number Date Country
20160298781 A1 Oct 2016 US
Divisions (1)
Number Date Country
Parent 14021277 Sep 2013 US
Child 15185968 US
Continuations (4)
Number Date Country
Parent 12641008 Dec 2009 US
Child 14021277 US
Parent 11201395 Aug 2005 US
Child 11732948 US
Parent 10741848 Dec 2003 US
Child 11201395 US
Parent 10322871 Dec 2002 US
Child 10741848 US
Continuation in Parts (4)
Number Date Country
Parent 12141848 Jun 2008 US
Child 12641008 US
Parent 11732948 Apr 2007 US
Child 12141848 US
Parent 11784765 Apr 2007 US
Child 12641008 US
Parent 11201395 Aug 2005 US
Child 11784765 US