The invention relates to GMR based magnetic field angle sensors with particular reference to their fabrication using a particular reactive ion etching (RIE) technique.
Several magnetic field angle sensor designs have been proposed and used but there remains a need for a monolithic (single chip) low-cost design. This is a subject of the present invention. The disclosed GMR-based element is integrated with the other parts of magnetic field angle sensor for a one-chip solution with single process flow.
A routine search of the prior art was performed with the following references of interest being found:
In U.S. Patent Application 2006/0002024, Le et al. disclose a first RIE of tantalum nitride using CF4/CHF3 and a second RIE chemistry based on O2, CO2, NH3/H2 or H2/N2 as examples. U.S. Pat. No. 6,458,603 (Kersch et al) teaches RIE using CHF3, CF4, and Ar with a tantalum nitride/Ta diffusion barrier, while U.S. Pat. No. 7,352,531 (Kameyama) teaches GMR etching using an oxygen plasma and CF4.
It has been an object of at least one embodiment of the present invention to provide a magnetic angle sensor device having improved sensitivity and accuracy.
Another object of at least one embodiment of the present invention has been to provide a process for manufacturing said magnetic angle sensor.
Still another object of at least one embodiment of the present invention has been to minimize shunting effects by a hard mask of TaN that is used in the process and then left behind as part of the completed structure.
A further object of at least one embodiment of the present invention has been to use exotic etchants as part of said manufacturing process.
These objects have been achieved by first forming a GMR stack in the usual way. The stack is then coated with a layer of TaN whose thickness is very carefully controlled. This is so that when the photoresist used to pattern the TaN (for later use as a hard mask) is stripped in an oxygen plasma, most of the TaN is converted to TaO/TaON so that the hard mask's sheet resistance is increased to be of the order of 2.5M ohm/sq. Since the hard mask is left in place within the completed structure, to avoid damaging the sensor while it is being removed, this high sheet resistance serves to minimize any electric current shunting effects that would reduce the effectiveness of the device.
a) Cross-sectional view of initial structure at start of processing.
b) A photoresist pattern is formed for patterning the tantalum nitride hard mask.
c) The tantalum nitride hard mask is patterned by CF4 RIE and then partially oxidized.
d) The full GMR stack is etched by CH3OH gas to form the completed sensor.
Highlights of the invention include:
The GMR-based device 10 that comprises the present invention is illustrated in plan view in
Typically, the dimensions of the coil structure in
To achieve the needed high dR/R signal, the multiple layers that make up the GMR stack are all deposited during a single pump down. Starting with substrate 20, seed layer 21 (generally NiCr), with a thickness between about 40 and 80 Angstroms, is first deposited thereon. Then, the full complement of GMR layers is deposited, as shown in
Tantalum nitride layer 27 is formed by reactive sputtering of a Ta target in the presence of nitrogen. By adjusting the N2 partial pressure during deposition, a tantalum nitride layer having high electrical resistance is formed. Typically, the sputtering gas would comprise argon at a partial pressure in the range of 10−4 to 10−2 torr and nitrogen at a partial pressure in the range of 10−4 to 10−2 torr for a total puttering pressure of from 2×10−4 to 2×10−2 torr. Typically, the tantalum nitride layer was deposited at a rate of from 30 to 120 Angstroms/minute using DC magnetron sputtering.
All the deposition steps listed above were performed in a multi-target UHV PVD chamber. Following its formation, the GMR stack was annealed at a temperature of 250° C., or higher, in the presence of a magnetic field of at least 1000 Oe, to establish good magnetic pinning.
After annealing, the angle sensor device itself is formed through use of a reactive ion etch: Photoresist layer 28, including, though not shown, a BARC (bottom anti-reflection coating) is first patterned as shown in
The full assemblage is then transferred to a second etching chamber where the remainder of the GMR stack is etched using TaN as a hard mask in CH3OH gas under the following conditions: source/bias power of 1500 W/1300 W, CH3OH flow rate of 15 sccm, at a pressure of 3 mT for 60 seconds. An important feature is that the patterned TaO/tantalum nitride layer serves as a hard mask during this critical step.
It is important to note that the thickness of the original tantalum nitride layer must be very carefully controlled (to within ±5 Angstroms) so as to ensure that only very thin tantalum nitride 29 is left after the completion of GMR etch, as seen in
Number | Name | Date | Kind |
---|---|---|---|
6458603 | Kersch et al. | Oct 2002 | B1 |
6778364 | Dobisz et al. | Aug 2004 | B2 |
7352531 | Kameyama | Apr 2008 | B2 |
20040127054 | Lee et al. | Jul 2004 | A1 |
20060002024 | Le et al. | Jan 2006 | A1 |
20070008762 | Lin | Jan 2007 | A1 |