Claims
- 1. A field effect transistor wherein a plurality of quantum boxes arranged adjacent to each other on a common plane are provided in a channel region, each of said quantum boxes comprising completely isolated volumes of one material completely surrounded at all sides by at least one different material.
- 2. The field effect transistor according to claim 1 wherein a gate electrode is provided on said plurality of quantum boxes.
- 3. The field effect transistor according to claim 1 wherein each of said quantum boxes is made of heterojunction of compound semiconductors.
- 4. The field effect transistor according to claim 3 wherein said heterojunction of compound semiconductors is one of AlGaAs/GaAs heterojunction and AlAs/GaAs heterojunction.
- 5. The field effect transistor according to claim 1 wherein an electron supplying layer is provided above said channel region.
- 6. The field effect transistor according to claim 1 wherein each of said quantum boxes is made of junction of a semiconductor and an insulator.
- 7. The field effect transistor according to claim 6 wherein said semiconductor comprises a group IV element, and said insulator comprises a compound of a group IV element and oxygen.
- 8. The field effect transistor according to claim 6 wherein said semiconductor is Si, and said insulator is SiO.sub.2.
Priority Claims (2)
Number |
Date |
Country |
Kind |
5-292774 |
Oct 1993 |
JPX |
|
6-186260 |
Jul 1994 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 08/329,495, filed Oct. 26 1994, now abandoned.
US Referenced Citations (2)
Continuations (1)
|
Number |
Date |
Country |
Parent |
329495 |
Oct 1994 |
|