Number | Name | Date | Kind |
---|---|---|---|
4062699 | Armstrong | Dec 1977 | |
4280855 | Bertin et al. | Jul 1981 | |
4318216 | Hsu | Mar 1982 | |
4366613 | Ogura et al. | Jan 1983 | |
4376286 | Lidow | Mar 1983 | |
4442589 | Doo et al. | Apr 1984 | |
4502914 | Trumpp et al. | Mar 1985 | |
4514897 | Chiu et al. | May 1985 | |
4532697 | Ko | Aug 1985 | |
4597824 | Shinada et al. | Jul 1986 | |
4599118 | Han et al. | Jul 1986 | |
4616399 | Ooka | Oct 1986 | |
4616401 | Takeuchi | Oct 1986 | |
4636822 | Codella et al. | Jan 1987 | |
4637124 | Okuyama et al. | Jan 1987 | |
4682404 | Miller et al. | Jul 1987 | |
4729001 | Haskell | Mar 1988 | |
4737828 | Brown | Apr 1988 | |
4746624 | Cham et al. | May 1988 |
Number | Date | Country |
---|---|---|
0033003 | Dec 1980 | EPX |
0111086 | Oct 1983 | EPX |
0248292 | May 1987 | EPX |
115863 | Jul 1983 | JPX |
194367 | Nov 1983 | JPX |
Entry |
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IEDM 82, pp. 718-721, by S. Ogura et al., "A Half Micron MOSFET Using Double Implanted LDD". |
European Search Report EP 90 48 0063. |
IBM Technical Disclosure Bulletin, vol. 30, No. 3, Aug. 1987, pp. 1136-1137, "Process for Making Very Small, Asymmetric, Field-Effect Transistors". |