Claims
- 1. A field emission device, comprising: a silicon substrate having an emitter electrode formed in a surface portion thereof; an insulating layer formed on said emitter electrode and having a nano hole to expose said emitter electrode; an emitter formed on said emitter electrode exposed through said nano hole; and a gate electrode formed on said insulating layer.
- 2. The field emission device as claimed in claim 1, wherein said emitter electrode is formed by an impurity implantation.
- 3. The field emission device as claimed in claim 1, further comprising a catalyst layer formed between said emitter electrode and said emitter.
- 4. The field emission device as claimed in claim 3, wherein said catalyst layer is made of a transition metal.
- 5. The field emission device as claimed in claim 1, wherein said emitter is formed of any one of carbon nanotube, a nano grain film and a metal tip.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2001-86836 |
Dec 2001 |
KR |
|
Parent Case Info
[0001] The present application is a Divisional of application Ser. No. 10/160,413, filed May 30, 2002.
Divisions (1)
|
Number |
Date |
Country |
Parent |
10160413 |
May 2002 |
US |
Child |
10699252 |
Oct 2003 |
US |