Field emission devices with current stabilizer(s)

Information

  • Patent Grant
  • 6262530
  • Patent Number
    6,262,530
  • Date Filed
    Wednesday, April 15, 1998
    26 years ago
  • Date Issued
    Tuesday, July 17, 2001
    23 years ago
Abstract
A field emission device includes a non-stabilized special vector electron source having a field emission edge emitter cathode (102), a stabilizing anode (103) and a current stabilizer (104) in electrical circuit of the stabilizing anode (103), a collecting anode (105) and at least one control electrode (106) for controlling emission flow of electrons from the vector electron source to the collecting anode (105).
Description




FIELD OF THE INVENTION




This invention relates generally to field emission devices.




BACKGROUND OF THE INVENTION




Cold cathode field emission devices (FEDs) are known in the art. FEDs typically comprise an electron emitter, for emitting electrons and an extraction electrode, for providing an electric field to the electron emitter to facilitate the emission of electrons. FEDs may also include an anode for collecting emitted electrons.




Operation of FEDs usually includes operable coupling a voltage between the extraction electrode and a reference potential and operable connecting the electron emitter to the reference potential. Alternatively, the extraction electrode may be operable coupled between the electron emitter and the reference potential. In order to effect modulated electron emission it is possible to provide an extraction electrode potential in concert with a variable electron emitter potential.




A common operational shortcoming of FEDs is that the electron emission occurs during the period of application of modulating signals only. Attempts to overcome this shortcoming have not been operationally enabling.




Accordingly, a need exists for a method of operating electron's emission independing in parts or all from technical date of field emission cathodes and enabling to operate flow of electrons in vacuum.




Field emission vacuum microtubes are also known. Vacuum tube technology typically relied upon electron emission as induced through provision of a heated cathode. More recently, solid-state devices have been proposed wherein electron emission activity occurs in conjunction with a cold cathode. The advantages of the latter technology are significant, and include rapid switching capabilities and resistance to electromagnetic pulse phenomena.




Flat panel field emission displays are also known in the art. The displays typically include electron emitters emitting electrons, extraction electrodes, proximally disposed with respect to the electron emitters, and anodes for collecting at least some of any emitted electrons with a layer of cathodoluminescent material (phosphor) that is deposited on the back side of the viewing area of the display.




Notwithstanding the anticipated advantages of solid-state field emission devices, a number of problems are currently faced that inhibit wide spread application of this technology. One problem relates to unable manufacturability of such devices. Current non-planar configurations for these devices require the construction, at a microscopic level, of emitter cones, through a layer by layer deposition process, is proving a significant challenge to today's manufacturing capability. Planar configured devices have also been suggested, which devices will apparently be significantly easier to manufacture. Such planar configurations, however, will not necessarily be suited for all hoped for applications.




Accordingly, a need exists for the FEDs that can be readily manufactured using known manufacturing techniques, and that yields the devices suitable for application in a variety of uses. Fabrication of the FEDs is also known and has, in general, led to nonuniform geometry of individual emitting cathodes in device arrays. Since electron emission is from the emitting cathodes, the non-uniform geometry of the individual emitting cathode typically causes non-uniform emission of electrons and, hence destruction of emitting cathodes that emit excess electrons.




There is a need for method that provides for minimizing non-uniform electron emission from emitting cathodes.




SUMMARY OF THE INVENTION




These needs and others are substantially met through provision method operating of the field emission emitting cathodes, design and fabricate of the field emission devices based on this the method disclosed herein.




Field emission devices constructed in accordance with invitation include generally a cathode emitting electrons, a stabilizing anode, a current stabilizer and a collecting anode. The method allows fabricating multiple the emitting cathodes, the stabilizing anodes, the stabilizers, the control electrodes and the collecting anodes for a field emission device. The method, offered basic field emission devices and technique of fabricate these in accordance with invitation allow minimize non-uniform electron emission from emitting cathodes by resistance elements between each or group cathodes and electrodes. This also allows designing field emission devices without control electrode for simple using.




Field emission devices in accordance with invitation can fabricate by using simple known planar technologies.




Using this technique allows producing the field emission devices on base substrate together with solid-state electronics devices.




The method allows use field emission cold cathode in termoelectronics mode.




The method allows minimize non-uniform field emission from cathodes in case damage parts of all in working time or their non-uniform fabricating.











BRIEF DESCRIPTION OF THE DRAWINGS





FIG. 1

is a schematic representation of an edge emitter non-stabilized spatial vector electron source.





FIG. 2

is a schematic representation of an edge emitter stabilized spatial vector electron source.





FIG. 3

is a schematic representation of an edge emitter limited spatial vector electron source.





FIG. 4

is a schematic view showing a first embodiment of an edge emitter spatial vector electron source.





FIG. 5

is a schematic view showing a second embodiment of an edge emitter spatial vector electron source.





FIG. 6

is a schematic view showing a third embodiment of an edge emitter spatial vector electron source.





FIG. 7

is a schematic representation of a field emission triode type device employing an edge emitter non-stabilized spatial vector electron source.





FIG. 8

is a schematic representation of a field emission triode type device employing an edge emitter stabilized spatial vector electron source.





FIG. 9

is a schematic representation of a field emission triode type device employing an edge emitter limited spatial vector electron source.





FIG. 10

is a schematic representation of a field emission tetrode type device employing an edge emitter non-stabilized spatial vector electron source.





FIG. 11

is a schematic representation of a field emission tetrode type device employing an edge emitter stabilized spatial vector electron source.





FIG. 12

is a schematic representation of a field emission tetrode type device employing an edge emitter limited spatial vector electron source.





FIG. 13

is a transverse cross section of the basic laminate structure to produce edge emitter field emission devices employing spatial vector electron sources.





FIG. 14

is a cross section of the substrate referred in

FIG. 13

with selectively formed cavities.





FIG. 15

is a cross section of the substrate referred in

FIG. 13

with cavities.





FIG. 16

is a cross section of a field emission display.





FIG. 17

is a cross section of a tetrode type field emission device employing an edge emitter stabilized spatial vector electron source.





FIG. 18

is a view of a first conductive layer of an edge emitter tetrode field emission device referred in FIG.


17


.





FIG. 19

is a view of a second conductive layer of an edge emitter tetrode type field emission device referred in FIG.


17


.





FIG. 20

is a view of a third conductive layer of an edge emitter tetrode type field emission device referred in

FIG. 17







FIG. 21

is a view of forth-conductive layer of an edge emitter tetrode type field emission device referred in FIG.


17


.





FIG. 22

is a schematic view showing an edge emitter spatial vector electron source having multiple cathodes.





FIG. 23

is a view showing an edge emitter spatial vector electron source having multiple cathodes.





FIG. 24

is a cross section showing first embodiment of a field emission device employing an edge emitter spatial vector electron source.





FIG. 25

is a top view of the first embodiment of the field emission device referred in FIG.


24


.





FIG. 26

is a cross section showing a second embodiment of a field emission device employing an edge emitter spatial vector electron source.





FIG. 27

is a cross section showing a third embodiment of a field emission device employing an edge emitter spatial vector electron source.





FIG. 28

is a top view of the third embodiment of the field emission device referred in FIG.


27


.





FIG. 29

is a cross section showing a forth embodiment of a field emission device employing an edge emitter spatial vector electron source.





FIG. 30

is a cross section showing a fifth embodiment of a field emission device employing an edge emitter spatial vector electron source.





FIG. 31

is a cross section showing a sixth embodiment of a field emission device employing an edge emitter spatial vector electron source.





FIG. 32

is a cross section showing a seventh embodiment of a field emission device employing an edge emitter spatial vector electron source.





FIG. 33

is a cross section showing an eighth embodiment of a field emission device employing an edge emitter spatial vector electron source.





FIG. 34

is a cross section showing a ninth embodiment of a field emission device employing an edge emitter spatial vector electron source.





FIG. 35

is a cross section showing a tenth embodiment of a field emission device employing an edge emitter spatial vector electron source.





FIG. 36

is a cross section showing a first embodiment of a field emission type display apparatus employing an edge emitter spatial vector electron sources.





FIG. 37

is a cross section showing a second embodiment of a field emission type display apparatus employing an edge emitter spatial vector electron sources.





FIG. 38

is a cross section showing a third embodiment of a field emission type display apparatus employing an edge emitter spatial vector electron sources.





FIG. 39

is a cross section showing a fourth embodiment of a field emission type display apparatus employing an edge emitter spatial vector electron sources.











DETAILED DESCRIPTION OF A PREFERRED EMBODIMENT





FIG. 1

illustrates a schematic representation of an edge emitter non-stabilized spatial vector electron source wherein a field emission cathode


102


emits electrons in direction of a stabilizing anode


103


by electrical field effect between the stabilizing anode


103


and the field emission cathode


102


. The electrical field is provided by different voltage between the stabilizing anode


103


and the field emission cathode


102


. The field emission cathode


102


has a conductive electrode


202


and may be used for operating. The stabilizing anode


103


has conductive electrode


203


to connect to a current stabilizer


104


. The main operating condition of the spatial vector electron source as a non-stabilized spatial vector electron source is presence of the current stabilizer


104


emplaced into circuit between electrode


203


of the stabilizing anode


103


and electrode


204


to connect to a voltage source of the stabilizing anode


103


. In the most cases the function of the current stabilizer


104


may be performed by resistive element that is used in the solid-state electronics for building voltage stabilizers by using zener diode and resistor. The field emission effect is possible by a condition emplacement of the emitting cathode


102


and the stabilizing anode


103


in high vacuum


101


. The space


303


between the emitting cathode


102


and the stabilizing anode


103


is the non-stabilized electron source


001


in vacuum


101


.





FIG. 2

illustrates a schematic representation of an edge emitter stabilized spatial vector electron source wherein a field emission cathode


102


emits electrons in direction of a stabilizing anode


103


by electrical field effect between the stabilizing anode


103


and the field emission cathode


102


. The electrical field is provided by different voltage between the stabilizing anode


103


and the field emission cathode


102


. The field emission cathode


102


has a conductive electrode


202


to connect to a current stabilizer


104


and may be used for operating. The stabilizing anode


103


has conductive electrode


203


for operating. The main operating condition of the spatial vector electron source as a stabilized spatial vector electron source is presence of the current stabilizer


104


emplaced into circuit between electrode


202


of the emitting cathode


102


and electrode


204


to connect to voltage source of the emitting cathode


102


. In the most cases the function of the current stabilizer


104


may performed by resistive elements how it is used in the solid-state electronics for building voltage stabilizers by using zener diode and resistor. The field emission effect is possible by condition emplacement of the emitting cathode


102


and the stabilized anode


103


in high vacuum


101


. The space between the emitting cathode


102


and the stabilizing anode


103


is the stabilized electron source


001


in vacuum


101


.





FIG. 3

illustrates a schematic representation of an edge emitter limited spatial vector electron source wherein a field emission cathode


102


emits electrons in direction of a stabilizing anode


103


by electrical field effect between the stabilizing anode


103


and the field emission cathode


102


. The electrical field is provided by different voltage between the stabilizing anode


103


and the field emission cathode


102


. The field emission cathode


102


has a conductive electrode


202


to connect to a cathode current stabilizer


104




c


and also may be used for operating. The stabilizing anode


103


has conductive electrode


203


to connect to an anode current stabilizer


104




a


and also may be used for operating. The main operating condition of the spatial vector electron source as a limited spatial vector electron source is presence the anode current stabilizer


104




a


emplaced into circuit between the electrode


203


of the stabilized anode


103


and the electrode


204




a


connecting to a voltage source of the stabilizing anode


103


and also the cathode current stabilizer


104




c


emplaced in circuit between the electrode


202


of the emitting cathode


102


and the electrode


204




c


connecting to voltage source of the emitting cathode


102


. In the most cases the function of the stabilizers of current


104




a


and


104




c


may perform by resistive elements how it is made in the solid-state electronics for building voltage stabilizers by using zener diode and resistor. The field emission effect is possible by condition emplacement the emitting cathode


102


and the stabilized anode


103


in high vacuum


101


. The space between the emitting cathode


102


and the stabilizing anode


103


is the limited electron source


001


in vacuum


101


.





FIG. 4

is a schematic view showing a first embodiment of an edge emitter spatial vector electron source. The first embodiment of the edge emitter spatial vector electron source is a non-stabilized spatial vector electron source comprising: an edge emitter cathode


102


, a stabilizing anode


103


and a resistive element Rst-sa stabilizing a current of the stabilizing anode


103


.





FIG. 5

is a schematic view showing a second embodiment of an edge emitter spatial vector electron source. The second embodiment of the edge emitter spatial vector electron source is a stabilized spatial vector electron source that comprises: a resistive element Rst-ct stabilizing a current of the cathode


102


, an edge emitter cathode


102


and a stabilizing anode


103


.





FIG. 6

is a schematic view showing a third embodiment of an edge emitter spatial vector electron source. The third embodiment of the edge emitter spatial vector electron source is a limited spatial vector electron source comprising: a resistive element Rst-ct stabilizing current of the cathode


102


, an edge emitter type cathode


102


, a stabilizing anode


103


and a resistive element Rst-sa stabilizing current of the stabilizing anode


103


.





FIG. 7

illustrates a schematic representation of a field emission triode type device employing an edge emitter non-stabilized spatial vector electron source wherein electrons


305


of the spatial vector electron source


001


may be directed to collecting anode


105


by turning of electrical field vector for electrons


303


emitting by a cathode


102


in direction of a stabilizing anode


103


. The field emission effect is possible by condition emplacement the emitting cathode


102


, the stabilized anode


103


and the collecting anode


105


in high vacuum


101


. Electrodes


202


,


203


,


204


and


205


allow designing variety field emission devices based on the field emission triode type device employing the non-stabilized spatial vector electron source.





FIG. 8

illustrates a schematic representation of a field emission triode type device employing an edge emitter stabilized spatial vector electron source wherein electrons


305


of the spatial vector electron source


001


may be directed to collecting anode


105


by turning of electrical field vector for electrons


303


emitting by a cathode


102


in direction of a stabilizing anode


103


. The electrodes


202


,


203


,


204


and


205


allow designing variety field emission devices based on the field emission triode type device employing the stabilized spatial vector electron source.





FIG. 9

illustrates a schematic representation of a field emission triode type device employing an edge emitter limited spatial vector electron source wherein electrons


305


of the spatial vector electron source


001


may be directed to collecting anode


105


by turning of electrical field vector for electrons


303


emitting by a cathode


102


in direction of a stabilizing anode


103


. The electrodes


202


,


203


,


204




a


,


204




c


and


205


allow designing variety field emission devices based on the field emission triode type device employing the limited spatial vector electron source.





FIG. 10

illustrates a schematic representation of a field emission tetrode type device employing an edge emitter non-stabilized spatial vector electron source wherein electrons


305


of the spatial vector electron source


001


may be directed to collecting anode


105


and electrons


306


to an control electrode


106


by turning of electrical field vector for electrons


303


emitting by a cathode


102


in direction of a stabilizing anode


103


. The electrodes


202


,


203


,


204


,


205


and


206


allow designing variety field emission devices based on the field emission tetrode type device employing the non-stabilized spatial vector electron source.





FIG. 11

illustrates a schematic representation of a field emission tetrode type device employing an edge emitter stabilized spatial vector electron source wherein electrons


305


of the spatial vector electron source


001


may be directed to collecting anode


105


and electrons


306


to an control electrode


106


by turning of electrical field vector for electrons


303


emitting by a cathode


102


in direction of a stabilizing anode


103


. The electrodes


202


,


203


,


204


,


205


and


206


allow designing variety field emission devices based on the field emission tetrode type device employing the stabilized spatial vector electron source.





FIG. 12

illustrates a schematic representation of a field emission tetrode type device employing an edge emitter limited spatial vector electron source wherein electrons


305


of the spatial vector electron source


001


may be directed to collecting anode


105


and electrons


306


to an control electrode


106


by turning of electrical field vector for electrons


303


emitting by a cathode


102


in direction of a stabilizing anode


103


. The electrodes


202


,


203


,


204




a


,


204




c


,


205


and


206


allow designing variety field emission devices based on the field emission tetrode type device employing the limited spatial vector electron source.





FIG. 13

illustrates a example of a side elevational sectioned view of a substrate fabricating field emission devices employing edge emitter spatial vector electron sources therein a substrate


023


has the sandwich design comprising: several layers


022


of circuits based on solid-state electronics; several conductive layers


020


including cathodes, anodes, passive components and electrodes; dielectric layers


020


. A simple planar method to fabricate the sandwich design comprises following known technological procedures: deposition needed quantity dielectric, conductive and photoresist layers, selective exposition and development of photoresist layers, etching processes selectively to remove deposited layers.





FIG. 14

illustrates an example of a side elevational sectioned view of a substrate shown in

FIG. 13

within is selectively formed cavities


024


by etching processes into dielectric


021


through holes in conductive layers


020


. Thereby after cavities


024


are formed sandwich design for fabricating field emission devices employing edge emitter spatial vector electron sources is produced.





FIG. 15

illustrates an example of a side elevational sectioned view of a substrate shown in

FIG. 14

with finished sandwich design for fabricating field emission devices with edge emitter spatial vector electron sources, within a dielectric layer


025


covers field emission device. Thereby after deposition the dielectric layer


025


the field emission device employing spatial vector electron sources is produced.





FIG. 16

illustrates an example of a side elevational-sectioned view of a substrate shown in

FIG. 14

with ended sandwich design for fabricating field emission devices employing edge emitter spatial vector electron sources and an upper sandwich design of the field emission display. The upper sandwich design of the field emission display comprises a transparent collecting anode


105


, a cathodoluminescent material


002


and a transparent upper plate


003


. Spacers


026


divide the sandwich design and upper sandwich design.





FIG. 17

illustrates an example of a side elevational-sectioned view of a field emission tetrode type device with a negative and positive control electrodes based on an edge emitter stabilized spatial vector electron source. The field emission tetrode type device comprises a substrate


010


; a first conductive layer including the negative control electrode


106


′ and electrode


206


′ of the control anode; a second conductive layer including an emitting cathode


102


, a stabilizing anode


103


, a stabilizer of current of the cathode (planar resistive element)


104


, an electrode


202


of the emitting cathode, an electrode


203


of the stabilizing anode and an electrode


204


of the stabilizer of current of the emitting cathode; a third conductive layer including the positive control electrode


106


, an electrode


206


of the control anode; a forth conductive layer including an collecting anode


105


and an electrode


205


of the collecting anode; dielectric layers


011


dividing the conductive layers; and a dielectric layer


025


.





FIG. 18

illustrates an example of view of first conductive layer of the field emission tetrode type device shown in

FIG. 17

therein on substrate


010


made a negative control electrode


106


′ and an electrode of the anode


206


′ by well known prior technique.





FIG. 19

illustrates an example view of second conductive layer of the field emission tetrode type device referred in

FIG. 17

therein on dielectric


011


deposited an emitting cathode


102


, a stabilizing anode


103


, a stabilizer of current of the emitting cathode (planar resistive element)


104


, an electrode


202


of the emitting cathode, an electrode


203


of the stabilizing anode and an electrode


204


of the current stabilizer of the emitting cathode by well known prior technique.





FIG. 20

illustrates an example view of third conductive layer of the field emission tetrode type device referred in

FIG. 17

therein on dielectric


011


deposited a first positive control electrode


106


, a second positive control electrode


106


″, an electrode


206


of the first control anode and an electrode


206


″ of the second control anode by well known prior technique.





FIG. 21

illustrates an example view of forth conductive layer of the field emission tetrode type device referred in

FIG. 17

therein on dielectric


011


deposited an collecting anode


105


and an electrode


205


of the collecting anode by well known prior technique. The collecting anode


105


has holes


014


to form a cavity by well-known prior etching technique

FIG. 22

illustrates a case of multiplicity fabricating of an emitting cathode


102


of edge emitter spatial vector electron sources. The multiplicity fabricating of the emitting cathode


102


provides increasing of a current of the emitting cathode


102


. In this case, because of technological tolerance, the emitting cathodes


102


may have different currents from different cathodes


102


for one the spatial vector electron source


303


for equally voltage between the stabilized anode


103


and the each discrete emitting cathode


102


. For current aligning of different emitting cathodes


102


circuits between the each discrete emitting cathode


102


and a collective electrode


202


may include an aligning resistive element


080


. Electrodes of the emitting cathode


202


and the stabilizing anode


203


in this case perform function as it is for the one emitting cathode


102


. The resistive elements


080


may perform part or full a functionality of a current stabilizer


104


shown in

FIG. 2

or a current stabilizer


104




c


shown in FIG.


3


.





FIG. 23

is a schematic view showing an embodiment of a multiplicity-fabricated cathode of an edge emitter spatial vector electron source. The embodiment of the multiplicity fabricated cathode of the edge emitter spatial vector electron source provides an align of a field emission current of the one multiplicity fabricated cathode into one field emission device as well as a field emission current of the multiplies cathodes into different field emission devices placed on one unified substrate. Under this embodiment the each cathode into the multiplicity fabricated cathode comprises an align resistive element Realign in the cathode electrode circuit.





FIG. 24

is a schematic sectional view showing a first embodiment of a field emission device employing an edge emitter spatial vector electron source. The first embodiment of the field emission device employing the spatial vector electron source comprises: substrate


010


that can be made from a transparent material, with deposited an collecting anode


105


; a dielectric layer


011


on surface which are deposited an edge emitter cathode


102


and a stabilizing anode


103


. The dielectric material


011


is thereby etched that beads of the deposited layers of conductive materials (cathodes, anodes) are protruding on certain lengths about vertical walls of the dielectric material


011


.





FIG. 25

is a schematic sectional top view of the first embodiment, referred in

FIG. 24

wherein the edge emitter cathode


102


is deposited to just the same layer as the stabilizing anode


103


.





FIG. 26

is a schematic sectional view showing a second embodiment of a field emission device employing an edge emitter spatial vector electron source. The second embodiment of the field emission device employing the spatial vector electron source comprises: substrate


010


that can be made from a transparent material with deposited an collecting anode


105


; two dielectric layers


011


on whose surfaces are deposited an edge emitter cathode


102


and a stabilizing anode


103


in different layers. The dielectric material


011


is thereby etched that beads of the deposited layers of conductive materials (cathodes, anodes) are protruding on certain lengths about vertical walls of the dielectric material


011


.





FIG. 27

is a schematic sectional view showing a third embodiment of a field emission device employing an edge emitter spatial vector electron source. The third embodiment of the field emission device employing the spatial vector electron source comprises: substrate


010


that can be made from a transparent material with deposited an collecting anode


105


; a first dielectric layer


011


on surface which is deposited a control anode


106


; a second dielectric layer


011


on surface which are deposited an edge emitter cathode


102


and a stabilizing anode


103


. The dielectric material


011


is thereby etched that beads of the deposited layers of conductive materials (cathodes, control anodes, and anodes) are protruding on certain lengths about vertical walls of the dielectric material


011


.





FIG. 28

is a schematic sectional top view of the third embodiment, referred in

FIG. 27

, wherein the edge emitter cathode


102


is deposited to the same layer as the stabilizing anode


103


.





FIG. 29

is a schematic sectional view showing a forth embodiment of a field emission device employing an edge emitter spatial vector electron source. The forth embodiment of the field emission device employing the spatial vector electron source comprises: substrate


010


that can be made from a transparent material with deposited an collecting anode


105


; a first dielectric layer


011


on surface which are deposited an edge emitter cathode


102


and a stabilizing anode


103


; a second dielectric layer


011


on surface which is deposited a control anode


106


. The dielectric material


011


is thereby etched that beads of the deposited layers of conductive materials (cathodes, control anodes, and anodes) are protruding on certain lengths about vertical walls of the dielectric material


011


.





FIG. 30

is a schematic sectional view showing a fifth embodiment of a field emission device employing an edge emitter spatial vector electron source. The fifth embodiment of the field emission device employing the spatial vector electron source comprises: substrate


010


that can be made from a transparent material with deposited an collecting anode


105


; a first dielectric layer


011


on surface which is deposited a first control anode


106


/


1


; a second dielectric layer


011


on surface which are deposited edge emitter cathode


102


and a stabilizing anode


103


; a third dielectric layer


011


on surface which is deposited a second control anode


106


/


2


. The dielectric material


011


is thereby etched that beads of the deposited layers of conductive materials (cathodes, control anodes, and anodes) are protruding on certain lengths about vertical walls of the dielectric material


011


.





FIG. 31

is a schematic sectional view showing a sixth embodiment of a field emission device employing an edge emitter spatial vector electron source. The sixth embodiment of the field emission device employing the spatial vector electron source comprises: substrate


010


; a first dielectric layer


011


on surface which are deposited an edge emitter cathode


102


and a stabilizing anode


103


; a second dielectric layer


011


to provide a needed distance between the edge emitter cathode


102


and the collecting anode


105


; a plate


003


made from a transparent material with deposited an collecting anode


105


made also from a transparent conductive material. The dielectric material


011


is thereby etched that beads of the deposited layers of conductive materials (cathodes, anodes) are protruding on certain lengths about vertical walls of the dielectric material


011


.





FIG. 32

is a schematic sectional view showing a seventh embodiment of a field emission device employing an edge emitter spatial vector electron source. The seventh embodiment of the field emission device employing the spatial vector electron source comprises: substrate


010


with deposited a control anode


106


; a first dielectric layer


011


on surface which are deposited an edge emitter cathode


102


and a stabilizing anode


103


; a second dielectric layer


011


to provide a needed distance between the edge emitter cathode


102


and the collecting anode


105


; a plate


003


made from transparent material with deposited an collecting anode


105


made also from a transparent conductive material. The dielectric material


011


is thereby etched that beads of the deposited layers (cathodes, control anodes, and anodes) are protruding on certain lengths about vertical walls of the dielectric material


011


.





FIG. 33

is a schematic sectional view showing an eighth embodiment of a field emission device employing an edge emitter spatial vector electron source. The eighth embodiment of the field emission device employing the spatial vector electron source comprises: substrate


010


; a first dielectric layer


011


on surface which are deposited an edge emitter cathode


102


and a stabilizing anode


103


; a second dielectric layer


011


on surface which is deposited a control anode


106


; a third dielectric layer


011


to provide a needed distance between the edge emitter cathode


102


and the collecting anode


105


; a plate


003


made from a transparent material with deposited an collecting anode


105


made also from a transparent conductive material. The dielectric material


011


is thereby etched that beads of the deposited layers (cathodes, control anodes, and anodes) are protruding on certain lengths about vertical walls of the dielectric material


011


.





FIG. 34

is a schematic sectional view showing a ninth embodiment of a field emission device employing an edge emitter spatial vector electron source. The ninth embodiment of the field emission device employing the spatial vector electron source comprises: substrate


010


with deposited a control anode


106


/


1


; a first dielectric layer


011


on surface which are deposited an edge emitter cathode


102


and an stabilizing anode


103


; a second dielectric layer


011


on surface which is deposited a control anode


106


/


2


; a third dielectric layer


011


to provide a needed distance between the edge emitter cathode


102


and the collecting anode


105


; a plate


003


made from a transparent material with deposited an collecting anode


105


made also from a transparent conductive material. The dielectric material


011


is thereby etched that beads of the deposited layers (cathodes, control anodes, and anodes) are protruding on certain lengths about vertical walls of the dielectric material


011


.





FIG. 35

is a schematic sectional view showing a tenth embodiment of a field emission device employing an edge emitter spatial vector electron source. The tenth embodiment of the field emission device employing the spatial vector electron source comprises: substrate


010


; a first dielectric layer


011


on surface which are deposited an edge emitter cathode


102


; a second dielectric layer


011


on surface which are deposited an stabilizing anode


103


; a dielectric layer


011


on surface which is deposited a control anode


106


; a plurality of spacers


009


for one display to provide needed space between each the edge emitter cathode


102


and the collecting anode


105


; a plate


003


made from a transparent material with deposited an collecting anode


105


made also from a transparent conductive material. The dielectric material


011


is thereby etched that beads of the deposited layers (cathodes, control anodes, and anodes) are protruding on certain lengths about vertical walls of the dielectric material


011


.





FIG. 36

is a schematic sectional view showing a first embodiment of a field emission flat display apparatus. The first embodiment of the flat display apparatus comprises: a substrate


010


with deposited an collecting anode


105


having on its surface an applied cathodoluminescent material


002


; a plurality of field emission devices


001


employing edge emitter spatial vector electron sources that can be made by known deposition and etching processes and manners; a plate


003


made from a transparent material. Thus, this embodiment may be a monolithic display that has provided all technological procedures only for the one substrate


010


. The first embodiment of the field emission display has an effective direct light emission by the cathodoluminescent material and is preferably to use with low voltage phosphors.





FIG. 37

is a schematic sectional view showing a second embodiment of a field emission flat display apparatus. The second embodiment of the flat display apparatus comprises: a substrate


010


; a plurality of field emission devices employing edge emitter spatial vector electron sources


001


that can be made by known deposition and etching processes and manners; a plate


003


made from transparent material with a deposited collecting anode


105


made from a transparent conductive material having on its surface applied cathodoluminescent material


002


. The second embodiment of the field emission display apparatus has a usual back light emission by the cathodoluminescent material and is preferably to use with low voltage phosphors.





FIG. 38

is a schematic sectional view showing a third embodiment of a field emission flat display apparatus. The third embodiment of the flat display apparatus comprises: a substrate


008


made from transparent material with deposited an collecting anode


105


having on its surface applied cathodoluminescent material


002


; a plurality of field emission devices employing edge emitter spatial vector electron sources


001


that can be made by known deposition and etching processes and manners; a plate


003


made from a transparent material. Thus, this embodiment may be a monolithic display that has provided all technological procedures only for the one substrate


010


. The third embodiment of the field emission display has an effective direct light emission as well as a usual back light emission by the cathodoluminescent material and is preferably to use with low voltage phosphors.





FIG. 39

is a schematic sectional view showing a forth embodiment of a field emission flat display apparatus. The forth embodiment of the flat display apparatus comprises: a substrate


010


; a plurality of field emission devices employing edge emitter spatial vector electron sources that can be made by known deposition and etching processes and manners; a plate


003


made from a transparent material with a deposited collecting anode


105


made from a transparent conductive material having on his surface applied cathodoluminescent material


002


; a plurality of spacers


009


to provide needed space between the edge cathodes and the collecting anode. The forth embodiment of the field emission display has a usual back light emission by the cathodoluminescent material and is preferably to use with middle and high voltage phosphors.




It is understood that many changes and additional modifications of the invention are possible in view of the teachings herein without departing the scope of the invention as defined in the appended claims.



Claims
  • 1. A field emission device comprising:a non-stabilized spatial vector electron source comprising a field emission edge emitter cathode, a stabilizing anode and a current stabilizer in electrical circuit of said stabilizing anode; a collecting anode; at least one control electrode for controlling emission flow of electrons from said vector electron source to said collecting anode.
  • 2. The field emission device of claim 1 wherein the current stabilizer of the electron source is provided by a simple resistive element.
  • 3. A field emission device comprising:a limited spatial vector electron source comprising a field emission edge emitter cathode, a stabilizing anode, a cathode current stabilizer in electrical circuit of said emitter cathode and an anode Current stabilizer in electrical circuit of said stabilizing anode; a collecting anode; at least one control electrode for controlling emission flow of electrons from said vector electron source to said collecting anode.
  • 4. The field emission device of claim 3 wherein at least one current stabilizer of the electron source is provided by a simple resistive element.
Parent Case Info

This application claims benefit of Provisional Application Ser. No. 60/038,506 filed Feb. 25, 1997, also Ser. No. 60/044,471 filed Apr. 18, 1997.

US Referenced Citations (14)
Number Name Date Kind
4940916 Borel et al. Jul 1990
5214347 Gzezy May 1993
5283500 Kochanski Feb 1994
5382867 Maruo et al. Jan 1995
5386172 Komatsu Jan 1995
5466982 Akinwande Nov 1995
5502348 Moyer et al. Mar 1996
5610471 Bandy et al. Mar 1997
5644188 Potter Jul 1997
5646479 Troxell Jul 1997
5679960 Akama Oct 1997
5691600 Moyer et al. Nov 1997
5804909 Nilsson et al. Sep 1998
5859493 Kim Jan 1999
Foreign Referenced Citations (1)
Number Date Country
0681 311 A1 Aug 1995 EP
Provisional Applications (2)
Number Date Country
60/038506 Feb 1997 US
60/044471 Apr 1997 US