Information
-
Patent Grant
-
6611093
-
Patent Number
6,611,093
-
Date Filed
Tuesday, September 19, 200024 years ago
-
Date Issued
Tuesday, August 26, 200321 years ago
-
Inventors
-
Original Assignees
-
Examiners
Agents
-
CPC
-
US Classifications
Field of Search
US
- 313 495
- 313 496
- 313 497
- 313 309
- 313 336
- 313 351
- 313 306
-
International Classifications
-
Abstract
A field emission display which includes thin film resistors disposed between the electron-emitting elements of a cathode and a conductive support which provides electrical connection to said electron-emitting element through said thin film.
Description
FIELD OF THE INVENTION
This invention relates generally to field emission displays, and more particularly to field emission displays having transparent cathodes.
BACKGROUND OF THE INVENTION
A type of cold cathode for field emission displays is described by C. A. Spindt, et. al. “Physical properties of thin film field emission cathode with molybdenum cones” in the Journal of Applied Physics, V47, No. 12. The described devices produce electrons by quantum mechanical tunneling from the emitter surface into a vacuum under the influence of a large electric field. The electron current generated by any emitter is described by the “Fowler-Nordheim” equation and is influenced by a number of factors including the work-function of the emitting surface and the physical shape and geometry of the emitter cone. These factors are caused by processing conditions and may result in a large degree of variability in emission current within a grouping of emitters.
Flat-panel, field-emission displays are typically addressed by electrical means. Referring to
FIG. 1
, a typical prior art display is illustrated with a voltage signal applied between a first conductive electrode
11
disposed on a non-conductive substrate
10
and a second conductive electrode
12
overlying the first conductive electrode. The first and second electrodes are electrically isolated from each other by means of electrically non-conductive dielectric layer
13
lying between the electrode layers. Emitter elements
14
disposed between the first and second electrodes are activated by differential signals applied between the electrodes
11
and
12
to cause electrons
15
to be emitted into a vacuum
20
. The electrons are drawn to a light-emitting element
31
by the application of a voltage to an anode element
32
.
Light emitting elements
31
, opposite the electron-emitting elements
14
, generate light responsive to bombardment by electrons emitted from the corresponding emitting element
14
. Typically, a large number of electron-emitting elements are associated with each light-emitting element, which defines a pixel. The light-emitting elements
31
are carried by transparent conductive anode viewing screen
32
located parallel to, and spaced from, the electron-emitting elements
14
. The anode viewing screen is typically formed on a transparent insulating substrate
30
. The light-emitting elements are typically viewed through substrate
30
and transparent anode
32
.
Since there can be a large variance in the emission current from emitter to emitter in any grouping or array of emitters, there can be a corresponding variation in the intensity of light emitted by the light-emitting elements. This variation in intensity causes degradation in picture quality.
In addition, current emission heats the emitter. The emission current increases as the temperature of the emitter increases causing a positive feedback condition which can result in the thermal destruction of the emitter and/or arcing of the emitter to the anode causing destruction of the display.
In order to limit current in any emitter and to normalize emission current within the grouping of emitters, Kane, (U.S. Pat. No. 5,142,184) describes the imposition of a series ballast resistor
16
between the first conductive electrode
11
and emitter element
14
. The teachings of Kane, and other prior art, describe various configurations of resistive elements interconnecting, and disposed between, the first conductive electrode and the electron-emitting element. Typical prior art field emission displays,
FIG. 2
, comprise a plurality of substantially parallel first conductive electrodes
11
disposed in a generally horizontal direction on a non-conductive substrate, and a like plurality of second conductive electrodes
12
disposed in a direction generally perpendicular to, and overlying, the first conductive electrodes. The first and second electrode arrays are electrically isolated from each other by means of the electrically non-conductive dielectric layer
13
lying between the layers containing the electrode arrays. Electron-emitting elements
14
are disposed along each first conductive electrode at the intersection of the first and second conductive electrodes. When electrical signals are applied between first and second conductive electrodes, electrons are emitted from the electron-emitting elements located at the intersection of the first and second electrodes. Each electrode is made to be as narrow in width as possible to provide a large number of electrodes per display width. The resistance
17
of the electrode must be small in order to provide electrical addressing signals from one end of the electrode to the other without attenuation and consequent loss of signal fidelity. Consequently, electrodes are typically constructed from opaque metallic materials such as aluminum. Typical resistivities of these materials may be in the range of 2-5 micro-ohm-cm.
Referring to
FIGS. 1 and 3
, the ballast resistors
16
in series with the electron-emitting element and the first conductive electrode must be of a high resistance to provide sufficient retardation of excess current in the emitter element. This resistance is typically 10
5
to 10
7
Ohms. Ballast resistors
16
are electrically in parallel with the intrinsic series resistance
17
of the first conductive electrode
11
. Ballast resistors must be significantly higher in resistance than the electrode resistance along the electrode from one grouping of emitters to any other grouping of emitters. This favorable ratio minimizes nonuniformity of electron emission as a function of distance along the electrode. This is shown schematically in
FIG. 3
to provide illustration. A disadvantage of this type of ballasting is that the resistance of resistor
16
is dependent on geometry.
FIG. 10
shows various construction errors encountered in the photoresist and etching processes used to define the placement and shape of elements
11
,
14
and
16
.
FIGS. 10
a,
10
b
and
10
c
show varying lengths of resistor
16
due to x and y deviations in photoresist mask alignment causing varying resistance from one display to another.
FIG. 10
d
shows an alignment error through rotation of the cones
14
to the resistors
16
and metal line
11
. This causes a high variation in ballast resistance and non-uniform emission.
FIG. 10
e
show an abnormally thin ballast resistor
16
at emitter
14
a
due to undercutting of photoresist, and
FIG. 10
f
shows a necking down of ballast resistor
16
at emitter
14
a
that can occur where a right angle is formed between two elements such as elements
11
and
16
.
A second prior art display is described in U.S. Pat. No. 5,646,479, a portion of which is shown in the cross-sectional view, FIG.
4
. This display is viewed so that the light emitting element
31
may be viewed through substrate
40
. This configuration has several advantages, including the possibility of a reflective electrode
52
. This is a technique well known in the art for increasing the amount of light emitted as a function of the electron beam current. This art describes a display comprising a transparent first electrode
41
on which is disposed and mounted a plurality of emitter cones
14
. A second transparent, conductive electrode
42
is located plane-parallel to the first conductive transparent electrode and separated by a layer of dielectric material
13
. An electrical signal applied between the first and second transparent conductive electrode causes electrons
15
to be emitted from the emitter cones
14
disposed on the first transparent conductive electrode. The resistivity of the transparent conductive electrode
41
is selected so as to provide electrical short protection in the event of such a failure at any emitter. However, as may be seen from the illustrative schematic representation,
FIG. 5
, the resistance
17
between the signal source and emitter cone
14
is a variable function of the distance between the cone and the location of the applied electrical signal
5
. This variability in resistance can result in attenuation of electrical signal in the regions of highest resistance and increased emission current in the regions closest to the source of electrical signal application. This non-uniformity of electron emission can cause consequent loss of image quality when this structure is used as cathode in a display. Additionally, in order to achieve high light transmission through the transparent, conductive electrode, the conductive film must be thin. This increases the overall sheet resistance of the conductive film, limiting the maximum size of this type of display.
SUMMARY OF THE INVENTION
Accordingly, it is an object of the invention to provide a field emission display with uniformity of electron emission spatially distributed throughout the cathode.
It is another object to provide improved method for fabricating said cathode.
It is another object to provide a method for producing series emitter ballasting resistors that depend primarily on the thickness of the ballast material and not on the width and length.
It is another object to provide improved protection against electrical shorting between transparent conductive electrodes.
It is another object to provide for increased light transmission through said field emission cathode.
It is another object to reduce the resistance between the source of electrical signal and the location of the emitter cone.
There is provided a field emission display in which the cathode includes a ballast resistor between the electron-emitting cone and the first transparent conductive electrode which connects the cones to the source of the electrical signal, and in which the distributed resistance of the transparent conductive electrode is minimized by creation of a low-resistance region lying outside the region of electron-emitting cones.
DESCRIPTION OF THE DRAWINGS
The foregoing and other objects of the present invention will be more clearly understood from the following description when read in conjunction with the accompanying drawings in which:
FIG. 1
is a cross-sectional view of a prior art field emission display.
FIG. 2
is a plan view of a prior art field emission display.
FIG. 3
is a schematic representation of the first conductive electrode and ballast resistance in a prior art field emitter.
FIG. 4
is a cross-sectional view of a prior art field emission display with transparent electrodes.
FIG. 5
is a schematic representation of the distributed resistance in the first transparent conductive electrode in a prior art field emitter cathode.
FIG. 6
is a cross sectional view of an embodiment of the invention.
FIG. 7
is a plan view of a low resistance region of the first transparent conductive electrode in an embodiment of the invention.
FIG. 8
is a schematic illustration of the ballast resistor in series with the reduced parallel distributed resistance of the first transparent conductive electrode.
FIGS. 9
a
-
9
j
show a method for construction of a transparent field emission cathode with a ballast resistor in series with the distributed resistance of the first transparent conductive electrode.
FIGS. 10
a
-
10
f
show various processing results, which yield non-uniform resistor configurations.
DESCRIPTION OF THE INVENTION
A field emission display according to the invention is shown in
FIGS. 6-9
. The display comprises a cathode portion
100
and an anode portion
200
. The anode and cathode portions are spaced from each other and are hermetically sealed at the perimeter to form a cavity (not shown). The cavity formed between the two portions is evacuated with a typical vacuum pressure of about 10
−6
Torr. Techniques for sealing and evacuating the cavity are well known in the art.
The anode portion
200
of the display comprises a vacuum compatible substrate
70
made from materials such as glass, ceramic, metal, or silicon. When substrate
70
comprises electrically insulating or semiconducting materials such as glass, silicon or ceramic, an electrically conductive anode
72
is formed on one surface of substrate
70
. Anode
72
is typically formed from a highly conductive and reflective material such as aluminum. This material is typically deposited by vacuum means such as evaporation or sputtering to coat the entire surface of substrate
70
or a portion thereof. Regions
31
of a coating material capable of emitting light when stimulated by electron current is formed on the electrically conducting portions of anode
72
. This material is typically a cathodoluminescent phosphor such as ZnO:Zn but can be other materials or combinations of materials such as organic electroluminescent films.
Each cathode
100
comprises a portion
67
and a portion
65
. Portion
67
lies within, and is substantially enclosed by portion
65
,
FIG. 7. A
first defining characteristic of portion
67
is high transmissivity of light in a specific wavelength passband. This generally spans the wavelengths from 400 nm to 700 nm for visibility in the regions sensitive to the human eye, but does not exclude other wavelengths. A second defining feature of portion
67
is that it comprises an array of electron-emitting elements, two of which are shown, disposed with substantially uniform spatial distribution. The portion
65
has low electrical resistivity, typically in the range of 2-10 micro-ohm cm.
As was previously discussed, the electrical resistance from an electrical signal source
5
to any electron-emitting element
64
must be made small so that the signal quality from the signal source to the electron emitter is not degraded. The low resistivity region
65
provides a minimized electrical path from signal source
5
to any electron emitter
64
. In addition, the equivalent electrical circuit shown in
FIG. 8
represents the electrical resistance from signal source
5
to any electron emitter element
64
as a parallel resistive circuit. This has the effect of reducing the total resistance from signal source to electron emitter by the sum of the reciprocal resistances: 1/R
tot
=1/R
1
+1R
2
+1/R
3
+1/R
4
. This also has the effect of normalizing the resistance from,signal source
5
to any emitter element
64
so that the difference in resistance from emitter to emitter across the cathode is minimized.
Referring again to
FIG. 6
, cathode portion
67
comprises a first transparent, electrically conductive electrode
61
formed on transparent, electrically insulating substrate
60
, and a second transparent conductive electrode
62
spaced away from, and electrically isolated from electrode
61
by transparent, electrically insulating layer
63
. Electron-emitting elements
64
are disposed in a substantially spatially uniform array over first transparent conductive electrode
61
. Emitter elements
64
are spaced away from electrode
61
by resistive elements
66
. Resistive elements
66
are electrically connected to emitter elements
64
and first transparent electrode
61
, and function as ballast resistors. The resistance of the ballast resistors
66
is primarily dependent on their thickness. Emitter elements
64
are electrically isolated from second transparent, conductive electrode
62
by via
68
. Electrical signal
5
applied between first and second transparent conductive electrodes
61
,
62
causes electrons to be emitted from electron emitter
64
.
FIGS. 9
a
-
9
j
show a method for constructing a display incorporating the present invention;
FIG. 9
a
shows the transparent, electrically insulating substrate
60
coated with a first transparent, conductive electrode
61
. Transparent insulating substrate is typically glass of a type manufactured by Schott and identified as type D263. The first transparent conductive electrode is typically Indium Tin Oxide (ITO) coated to a sheet resistance of 10 to 100 Ohms per square. Cathode portion
65
is formed by conventional photolithographic means from low resistivity metal such as aluminum, chromium, copper, molybdenum or gold.
FIG. 9
b
represents the deposition of a blanket layer of resistor material
600
overlying first transparent conductive layer
61
. Resistor layer
600
is typically formed from a material such as SiC that is substantially opaque to light in the wavelength passband from 240 nm to 420 nm. Layer
600
is typically deposited by conventional sputtering or chemical vapor deposition (CVD) means.
Resistor layer
600
is patterned by conventional photolithographic means in
FIG. 9
c
to form ballast resistor
66
. Resistor
66
is typically 1 to 1.5 microns in diameter. Resistor layer
600
can be etched by wet or dry means with etchants containing F
−
ions. Etching stops when the etching process removes sufficient resistor layer material so as to expose electrode
61
. The resistance of resistor
66
is typically 10
4
to 10
7
Ohms when measured from electrode
61
to the surface of resistor
66
opposite electrode
61
. The resistance is controlled primarily by the thickness.
Referring to
FIG. 9
d,
transparent insulating layer
63
is deposited to a typical thickness of 300 nm to 500 nm by plasma enhanced chemical vapor deposition (PECVD). The layer overlies conductive electrode
61
and resistor
66
. Materials comprising insulating layer
63
are typically silicon dioxide or silicon nitride, but may be other materials with low dielectric constant, good electrically insulating properties, and high optical transmission in the visible wavelength passband. Second transparent conductive electrode
62
is deposited on dielectric layer
63
. Material comprising the second transparent conductive electrode is typically ITO with a sheet resistance of 10 to 100 Ohms per square. Second transparent conductive electrode is typically deposited by sputtering.
Photoresist
700
,
FIG. 9
e,
of a negative type whereby the resist polymerizes under exposure to actinic light and becomes insoluble in the developer is deposited by spin coating over second transparent electrode
62
. Typical examples of resist include OFPR made by Tokyo Ohka Co. Ltd. or DNR-L300 made by Dongjin Semichem Co. Ltd. Resist is deposited to a thickness of 100-200 nm. Following the coating step, resist is softbaked at 90 deg C. for 2 minutes on a hot plate.
FIG. 9
f
shows the exposure of photoresist
700
by means of actinic light
800
of a typical wavelength of 365 nm, transmitted through transparent substrate
60
, first transparent conductive electrode
61
, transparent insulating layer
63
, and second transparent conductive layer
62
. Resistor element
66
is opaque to this wavelength of light and so prevents polymerization in region
701
which is the plane projection of resistive element
66
onto photoresist layer
700
. As is well known in the science of optics, light will diffractad scatter edge of a feature such as resistive element
66
. This diffractive region
801
, causes region
701
to be smaller in diameter than the diameter of resistive element
66
. The difference in diameter may be controlled by length of exposure to actinic light
800
. This provides for self-alignment of resistive element
66
to feature
701
.
During development in an appropriate solvent, unexposed region
701
of photoresist film
700
is removed to lay bare the portion of second transparent conductive electrode
62
defined by region
701
in
FIG. 9
g.
Referring to
FIG. 9
h,
second transparent conductive electrode
62
is removed in region
701
by wet or dry etching in commercially available media to form gate
69
. Gate
69
is smaller in diameter than resistor element
66
. Regions masked by photoresist
700
are not etched. Likewise, transparent insulating layer
63
is etched in region
701
to form via
68
. Insulating layer
63
is etched by wet or dry etching means in media containing F
−
to stop on resistive element
66
.
Electron-emitting element
64
is formed by evaporating metal layer
900
into via
68
and incidentally onto photoresist layer
700
. Metal layer
900
is typically molybdenum, evaporated from a restricted source so that the half angle of evaporation is less than 10 degrees. This provides the conical shape of electron emitter
64
due to the closure of region
701
by accumulation of metal
600
. This has been described by Spindt. et. al. “Journal of Applied Physics” V47, #12, December 1976.
FIG. 9
j
shows the removal of closure layer
900
by etching away photoresist layer
700
, or by degrading the adhesion of layer
700
so that closure layer
900
loses mechanical attachment to second transparent electrode
62
. This is typically performed by treating in sulfur trioxide.
There has been provided a field emission display which includes a transparent cathode in which the electrical resistance of the electrode between the electron-emitting cone and the source of electrical current is minimized, the resistance of the ballast resistor is controlled primarily by its thickness, and its resistance is in parallel with the resistance of the electrode between the two cones to the source of electrical signal.
The foregoing descriptions of specific embodiments of the present invention are presented for the purposes of illustration and description. They are not intended to be exhaustive or to limit the invention to the precise forms disclosed; obviously many modifications and variations are possible in view of the above teachings. The embodiments were chosen and described in order to best explain the principles of the invention and its practical applications, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the following claims and their equivalents.
Claims
- 1. A field emission display comprising:a conductive anode, a light emitting material which emits light in response to electron bombardment carried by said conductive anode, a field emission cathode spaced from said anode including: a first substantially transparent electrode, a plurality of ballast resistive elements of predetermined thickness disposed on said first electrode, a plurality of electron-emitting elements, one for each resistive element, disposed on said resistive elements whereby the resistive elements are in series with each of said electron-emitting elements, a second substantially transparent conductive electrode spaced from said first conductive electrode, said second conductive electrode having a plurality of holes, one opposite from each of said electron-emitting elements, and a transparent insulating layer between said first and second conductive electrodes.
- 2. A field emission display as in claim 1 in which said electron-emitting elements are conical, said resistive elements are circular and said holes are circular.
- 3. A field emission display as in claim 2 in which the diameter of said circular holes is less than the diameter of the circular resistive elements.
- 4. A field emission display as in claim 1 in which a plurality of said electron-emitting elements are on a portion of said first transparent conductive electrode, and a layer of material having a higher electrical conductivity than said conductive electrode surrounds said electron-emitting elements and is connected to the source of electrical current for said emitting elements.
- 5. A field emission display as in claim 1 in which said ballast resistive elements are opaque.
US Referenced Citations (16)
Foreign Referenced Citations (3)
Number |
Date |
Country |
2 742 578 |
Jun 1997 |
FR |
2 744 834 |
Aug 1997 |
FR |
WO 9923679 |
May 1999 |
WO |