FILM BULK ACOUSTIC RESONATOR AND METHOD OF MANUFACTURING SAME

Abstract

A film bulk acoustic resonator includes: a substrate having; a lower electrode extending; a piezoelectric film provided on the lower electrode; an upper electrode opposed to the lower electrode and provided on the piezoelectric film; and a plurality of protrusions. The substrate has a cavity in a surface thereof. The lower electrode extends above the cavity from an upper surface of the substrate. The protrusions are provided below the lower electrode in the cavity.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view showing an example FBAR according to an embodiment of the invention.

FIG. 2 shows the A-A cross section of the FBAR shown in FIG. 1.

FIG. 3 shows the B-B cross section of the FBAR shown in FIG. 1.

FIG. 4 is a plan view showing an example method of manufacturing an FBAR according to the embodiment of the invention.

FIGS. 5A-5C show the C-C cross sections of the substrate shown in FIG. 4.

FIGS. 6 to 10 are cross-sectional views showing the example method of manufacturing the FBAR according to the embodiment of the invention.

FIG. 11 is a plan view showing the example method of manufacturing the FBAR according to the embodiment of the invention.

FIG. 12 shows the D-D cross section of the substrate shown in FIG. 11.

FIGS. 13 and 14 are cross-sectional views showing the example method of manufacturing the FBAR according to the embodiment of the invention.

FIG. 15 is a plan view showing another example FBAR according to the embodiment of the invention.

FIG. 16 is a plan view showing still another example FBAR according to the embodiment of the invention.

FIG. 17 is a plan view showing an example FBAR according to a first variation of the embodiment of the invention.

FIG. 18 shows the E-E cross section of the FBAR shown in FIG. 17.

FIG. 19 is a plan view showing an example FBAR according to a second variation of the embodiment of the invention.

FIG. 20 shows the F-F cross section of the FBAR shown in FIG. 19.

Claims

1. A film bulk acoustic resonator comprising: a substrate having a cavity in a surface thereof;a lower electrode extending above the cavity from an upper surface of the substrate;a piezoelectric film provided on the lower electrode;an upper electrode opposed to the lower electrode and provided on the piezoelectric film; anda plurality of protrusions provided below the lower electrode in the cavity.

2. The film bulk acoustic resonator according to claim 1, further comprising a sidewall film surrounding the plurality of protrusions, the sidewall film being made of a material different from that of the substrate.

3. The film bulk acoustic resonator according to claim 2, further comprising a surrounding wall provided on a side of the substrate defining a bottom surface of the cavity, the surrounding wall touching the sidewall film.

4. The film bulk acoustic resonator according to claim 3, further comprising a surrounding film opposed to the surrounding wall, the surrounding film touching the sidewall film.

5. The film bulk acoustic resonator according to claim 4, wherein the surrounding film is made of the same material as the substrate.

6. The film bulk acoustic resonator according to claim 1, wherein the plurality of protrusions are provided in the cavity on a side of the substrate defining a bottom surface of the cavity.

7. The film bulk acoustic resonator according to claim 1, wherein the plurality of protrusions are provided in the cavity on a side of a resonator section defined by a region formed above the cavity where the lower electrode is opposed to the upper electrode.

8. The film bulk acoustic resonator according to claim 7, wherein the plurality of protrusions are made of the same material as the substrate.

9. The film bulk acoustic resonator according to claim 7, wherein the plurality of protrusions are provided at least along the inside of the periphery of the resonator section in the cavity on the side of the resonator section.

10. The film bulk acoustic resonator according to claim 1, wherein a total area of top surfaces of the protrusions is less than an area of a resonator section defined by a region formed above the cavity where the lower electrode is opposed to the upper electrode.

11. The film bulk acoustic resonator according to claim 7, wherein a total area of lower surfaces of the protrusions is less than an area of the resonator section.

12. The film bulk acoustic resonator according to claim 1, further comprising a protection film provided between the cavity and the lower electrode, wherein an end of the lower electrode is beveled at an angle smaller than a right angle with respect to a surface of the protection film.

13. The film bulk acoustic resonator according to claim 1, wherein some of the plurality of protrusions are provided in the cavity on a side of the substrate defining a bottom surface of the cavity, and other of the plurality of protrusions are provided in the cavity on a side of a resonator section defined by a region formed above the cavity where the lower electrode is opposed to the upper electrode, the some of the plurality of protrusions and the other of the plurality of protrusions oppose each other.

14. A method of manufacturing a film bulk acoustic resonator comprising: removing part of a substrate to form a plurality of isolated first supports and a second support surrounding the plurality of first supports in a box configuration;forming a sacrificial film and a sidewall film so as to bury, respectively, a first gap provided between each pair of the plurality of first supports and between the plurality of first supports and the second support and a second gap provided around the second support between the second support and the substrate;forming a lower electrode extending above the sacrificial film and the first supports from above the substrate;forming a piezoelectric film on a surface of the lower electrode;forming an upper electrode opposed to the lower electrode and located on the piezoelectric film;removing the sacrificial film to form a cavity below a resonator section defined by a region where the lower electrode is opposed to the upper electrode; andremoving at least part in a height direction of each of the plurality of first supports in the cavity.

15. The method of manufacturing a film bulk acoustic resonator according to claim 14, wherein the first supports are formed so that an upper portion along the height direction is thinned.

16. The method of manufacturing a film bulk acoustic resonator according to claim 14, wherein the first supports are formed so that a center portion along the height direction is thinned.

17. The method of manufacturing a film bulk acoustic resonator according to claim 14, wherein an upper portion of the first supports are removed.

18. The method of manufacturing a film bulk acoustic resonator according to claim 14, wherein a center portion of the first supports are removed.

19. The method of manufacturing a film bulk acoustic resonator according to claim 14, further comprising forming a protection film extending above the sacrificial film and the first supports from above the substrate, before forming the lower electrode.

20. The method of manufacturing a film bulk acoustic resonator according to claim 14, wherein an end of the lower electrode is beveled at an angle smaller than a right angle with respect to a surface of the protection film.