FILM FORMING APPARATUS, FILM FORMING METHOD, AND MANUFACTURING METHOD OF LIGHT EMITTING ELEMENT

Abstract

An object of the present invention is to provide a film forming method for forming a film with reduced defect and to provide a film forming method for forming a film with a uniform quality. In addition, another object is to provide a manufacturing method of a light emitting element which can be driven with low voltage. Further, another object is to provide a manufacturing method of a light emitting element with high light emission efficiency. A film with reduced defect and a uniform quality can be formed by fixing a substrate to a substrate holding unit so that at least a part of a surface of the substrate is exposed, evaporating a vapor deposition material from an evaporation source filled with the vapor deposition material, irradiating the vapor deposition material which is evaporated with a laser beam, and depositing the vapor deposition material on the surface of the substrate.

Description

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 illustrates a film forming apparatus of the present invention;

FIG. 2 illustrates a film forming apparatus of the present invention;

FIG. 3 illustrates a film forming apparatus of the present invention;

FIG. 4 illustrates a film forming apparatus of the present invention;

FIG. 5 illustrates a film forming apparatus of the present invention;

FIG. 6 illustrates a light emitting element;

FIG. 7 illustrates a light emitting element;

FIG. 8 illustrates a light emitting device;

FIGS. 9A and 9B illustrate a light emitting device;

FIGS. 10A to 10D illustrate electronic appliances;

FIG. 11 illustrates an electronic appliance;

FIGS. 12A to 12C are cross-sectional views illustrating manufacturing steps of a light emitting element of the present invention;

FIGS. 13A to 13C are cross-sectional views illustrating manufacturing steps of a light emitting element of the present invention;

FIG. 14 is a perspective view illustrating a manufacturing step of a light emitting element of the present invention;

FIGS. 15A to 15C are cross-sectional views illustrating manufacturing steps of a light emitting element of the present invention;

FIG. 16 is a cross-sectional view illustrating a film forming apparatus which can be applied to the present invention;

FIG. 17 is a perspective view illustrating a laser beam irradiation unit which can be applied to the present invention; and

FIG. 18 shows a laser beam irradiation system which can be applied to the present invention.

Claims

1. A film forming apparatus comprising: a film forming chamber including an evaporation source filled with a vapor deposition material, and a substrate holding unit holding a substrate so that at least a part of a surface of the substrate is exposed; anda laser beam irradiation unit emitting a laser beam,wherein the laser beam irradiation unit is provided so as to irradiate the surface of the substrate which is exposed with the laser beam.

2. The film forming apparatus according to claim 1, wherein the laser beam irradiation unit is provided so that the surface of the substrate which is exposed is irradiated with the laser beam approximately perpendicularly.

3. The film forming apparatus according to claim 1, wherein the laser beam irradiation unit is provided so that the laser beam is emitted between the substrate and the evaporation source and so that the laser beam is emitted approximately parallel to the surface of the substrate which is exposed.

4. The film forming apparatus according to claim 1, wherein the film forming chamber has a light introducing window, andwherein the laser beam irradiation unit is provided so that the laser beam is introduced into the film forming chamber through the light introducing window.

5. The film forming apparatus according to claim 1, wherein a wavelength of the laser beam is absorbed by the vapor deposition material.

6. The film forming apparatus according to claim 1, wherein a laser oscillator selected from a group consisting of an Ar laser, a Kr laser, a carbon dioxide laser, a YAG laser, a YLF laser, a YAlO3 laser, a GdVO4 laser, a KGW laser, a KYW laser, an alexandrite laser, a Ti: sapphire laser, a Y2O3 laser, a YVO4 laser, a helium-cadmium laser, a KrF excimer laser, an ArF excimer laser, an XeCl excimer laser, and an XeF excimer laser is used as a laser light source of the laser beam irradiation unit.

7. The film forming apparatus according to claim 1, wherein a light receiving plate absorbing the laser beam is provided.

8. The film forming apparatus according to claim 1, wherein a plurality of evaporation sources are provided.

9. The film forming apparatus according to claim 1, wherein an electron beam emitting unit irradiating the vapor deposition material filled in the evaporation source with an electron beam is provided.

10. The film forming apparatus according to claim 1, wherein a heating unit heating the vapor deposition material filled in the evaporation source is provided.

11. A manufacturing method of a light emitting element, comprising: forming a first electrode over a substrate;forming a light emitting layer over the first electrode, said light emitting layer is formed by a method comprising: fixing the substrate to a substrate holding unit so that at least a part of a surface of the substrate is exposed;evaporating a vapor deposition material from an evaporation source filled with the vapor deposition material;irradiating the vapor deposition material which is evaporated with a laser beam; anddepositing the vapor deposition material over the first electrode, and forming a second electrode,wherein the vapor deposition material comprises at least one selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, calcium gallium sulfide, strontium gallium sulfide, and barium gallium sulfide.

12. The method according to claim 11wherein the vapor deposition material which is evaporated is irradiated with the laser beam by irradiating the surface of the substrate which is exposed with the laser beam approximately perpendicularly.

13. The method accoding to claim 11, wherein the vapor deposition material which is evaporated is irradiated with the laser beam, by emitting the laser beam between the substrate and the evaporation source and approximately parallel to the surface of the substrate which is exposed.

14. The method according to claim 11, wherein a wavelength of the laser beam is absorbed by the vapor deposition material.

15. A manufacturing method of a light emitting element, comprising: forming a first electrode over a substrate;forming a light emitting layer over the first electrode, said light emitting layer is formed by a method comprising: fixing the substrate to a substrate holding unit so that at least a part of a surface of the substrate is exposed;evaporating a vapor deposition material from an evaporation source filled with the vapor deposition material;irradiating the vapor deposition material which is evaporated with lamp light; anddepositing the vapor deposition material over the first electrode, and forming a second electrode,wherein the vapor deposition material comprises at least one selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, calcium gallium sulfide, strontium gallium sulfide, and barium gallium sulfide.

16. The method according to claim 15, wherein a wavelength of the lamp light is absorbed by the vapor deposition material.

17. The method according to claim 11, wherein the vapor deposition material is evaporated by irradiating the vapor deposition material filled in the evaporation source with an electron beam.

18. The method according to claim 11, wherein the vapor deposition material is evaporated by heating the vapor deposition material filled in the evaporation source.

19. The method according to claim 15, wherein the vapor deposition material is evaporated by irradiating the vapor deposition material filled in the evaporation sourcewith an electron beam.

20. The method according to claim 15, wherein the vapor deposition material is evaporated by heating the vapor deposition material filled in the evaporation source.

21. The method according to claim 11 further comprising: forming a first insulating layer after forming the first electrode.

22. The method according to claim 11 further comprising: forming a second insulating layer after forming the light emitting layer.

23. The method according to claim 15 further comprising: forming a first insulating layer after forming the first electrode.

24. The method according to claim 15 further comprising: forming a second insulating layer after forming the light emitting layer.

25. A manufacturing method of a light emitting element comprising: forming a first electrode over a substrate;forming a vapor deposition film over the first electrode;irradiating the vapor deposition film with a laser beam while heating the vapor deposition film; andforming a second electrode on the vapor deposition film.

26. The manufacturing method of the light emitting element according to claim 25 further comprising: irradiating the second electrode with a second laser beam after forming the second electrode.

27. The manufacturing method of the light emitting element, according to claim 25, wherein the vapor deposition film is irradiated with the laser beam from a surface side of the vapor deposition film.

28. The manufacturing method of the light emitting element, according to claim 25, wherein the vapor deposition film is irradiated with the laser beam from a substrate side.

29. The manufacturing method of the light emitting element, according to claim 25, wherein the vapor deposition film is heated at a temperature in a range of 50 to 600° C. during the laser irradiation.

30. A manufacturing method of a light emitting element, comprising: forming a first electrode over a substrate;forming a vapor deposition film over the first electrode;forming a second electrode over the vapor deposition film; andirradiating the second electrode with a laser beam.

31. The manufacturing method of the light emitting element according to claim 25, wherein the vapor deposition film contains a light emitting material.

32. The manufacturing method of the light emitting element according to claim 30, wherein the vapor deposition film contains a light emitting material.

33. A manufacturing method of a light emitting element comprising: forming a first electrode over a substrate;forming an insulating layer over the first electrode;forming a light emitting layer over the insulating layer by a vapor deposition method;irradiating the light emitting layer with a laser beam; andforming a second electrode over the light emitting layer.

34. A manufacturing method of a light emitting element, comprising: forming a first electrode over a substrate;forming a light emitting layer over the first electrode by a vapor deposition method;irradiating the light emitting layer with a laser beam;forming an insulating layer over the light emitting layer; andforming a second electrode over the insulating layer.

35. The manufacturing method of a light emitting element according to claim 33 further comprising: forming a second insulating layer over the light emitting layer after irradiating the light emitting layer with the laser beam and before forming the second electrode.

36. The manufacturing method of the light emitting element, according to claim 33, wherein the light emitting layer is irradiated with the laser beam while the light emitting layer is heated.

37. The manufacturing method of the light emitting element, according to claim 33, wherein the second electrode is irradiated with a second laser beam after forming the second electrode.

38. The manufacturing method of the light emitting element, according to claim 33, wherein the light emitting layer is irradiated with the laser beam from a surface side of the light emitting layer.

39. The manufacturing method of the light emitting element, according to claim 33, wherein the light emitting layer is irradiated with the laser beam from a substrate side.

40. The manufacturing method of the light emitting element, according to claim 34, wherein the light emitting layer is irradiated with the laser beam while the light emitting layer is heated.

41. The manufacturing method of the light emitting element, according to claim 34, wherein the second electrode is irradiated with a second laser beam after forming the second electrode.

42. The manufacturing method of the light emitting element, according to claim 34, wherein the light emitting layer is irradiated with the laser beam from a surface side of the light emitting layer.

43. The manufacturing method of the light emitting element, according to claim 34, wherein the light emitting layer is irradiated with the laser beam from a substrate side.

44. The manufacturing method of the light emitting element, according to claim 33, wherein the light emitting layer comprises at least one selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, calcium gallium sulfide, strontium gallium sulfide, and barium gallium sulfide.

45. The manufacturing method of the light emitting element, according to claim 33, wherein the insulating layer comprises at least one selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, calcium gallium sulfide, strontium gallium sulfide, and barium gallium sulfide.

46. The manufacturing method of the light emitting element, according to claim 34, wherein the light emitting layer comprises at least one selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, calcium gallium sulfide, strontium gallium sulfide, and barium gallium sulfide.

47. The manufacturing method of the light emitting element, according to claim 34, wherein the insulating layer comprises at least one selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, calcium gallium sulfide, strontium gallium sulfide, and barium gallium sulfide.