This application claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2018-0003770 filed on Jan. 11, 2018, in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in its entirety.
Embodiments of the disclosure described herein relate to an electronic device, and more particularly, relate to a fingerprint sensor.
Nowadays, various types of electronic devices are being used. An electronic device performs a unique function(s) depending on operations of various electronic circuit s/modules/chips included therein. For example, the electronic device includes a computer, a smartphone, a tablet, etc. The electronic device includes many electronic circuit s/modules/chips for the purpose of providing various functions thereof.
Recent electronic devices perform a user authentication function for providing a service to an authenticated user. For example, a way to authenticate a fingerprint is widely used to grant permission authenticated by the user to an electronic device. In a fingerprint sensor, various techniques are provided to improve the accuracy of fingerprint recognition.
For example, one technique is to increase a signal to noise ratio by increasing a voltage that is used in the fingerprint sensor. However, the technique needs a separate power circuit (e.g., a power management integrated circuit (PMIC)), thereby causing an increase in manufacturing costs or a decrease in the process yield.
Embodiments of the disclosure provide a fingerprint sensor having improved reliability and reduced costs.
According to an example embodiment, a fingerprint sensor includes a fingerprint pixel that detects a fingerprint capacitor by a user fingerprint based on a first voltage and outputs fingerprint information corresponding to the detected fingerprint capacitor through a first node. A voltage conversion circuit converts the fingerprint information received through the first node to a signal, which is based on a second voltage lower than the first voltage, and outputs the converted signal. An analog circuit outputs an output signal based on the converted signal by using the second voltage.
According to an example embodiment, a fingerprint sensor has a first fingerprint pixel and a controller. The first fingerprint pixel includes a first metal electrode connected with a sensing node, a first shielding electrode connected with a shielding node, and a first pixel circuit connected with the sensing node and the shielding node. The controller controls the first pixel circuit . The first pixel circuit includes a first switch that is connected between the sensing node and the shielding node and operates in response to a first control signal or a second control signal from the controller.
According to an example embodiment, an operation method of a fingerprint sensor, having a plurality of fingerprint pixels, includes activating a first fingerprint pixel of the plurality of fingerprint pixels, disconnecting a first metal electrode and a first shielding electrode of the activated first fingerprint pixel, controlling a potential of the first shielding electrode based on control signals provided to a second fingerprint pixel adjacent to the first fingerprint pixel among the plurality of fingerprint pixels, and obtaining information about a fingerprint capacitor formed by a user fingerprint from the activated first fingerprint pixel.
According to an example embodiment, a fingerprint sensor includes a first fingerprint pixel having a first sensing electrode and a first shielding electrode, a second fingerprint pixel having a second sensing electrode and a second shielding electrode, and a control circuit . The control circuit controls the first sensing electrode to generate fingerprint information based upon a first voltage applied to the first sensing electrode and a first capacitance developed between the first sensing electrode and a fingerprint of a user. Additionally, the control circuit adjusts, while the first sensing electrode generates the fingerprint information, a second voltage applied to the first shielding electrode in accordance with third voltages applied to the second sensing electrode and second shielding electrode.
According to an example embodiment, a fingerprint pixel includes a sensing electrode, a shielding electrode, a first node directly electrically connected to the sensing electrode, a second node directly electrically connected to the shielding electrode, a first switch directly electrically connected between the first and second nodes, a second switch directly electrically connected between the second node and a first voltage tap supplying a first voltage, a third switch directly electrically connected between the second node and a third node, a fourth switch directly electrically connected between the first and third nodes, a fifth switch directly electrically connected between the third node and a second voltage tap supplying a second voltage, differing from the first voltage, and sixth and seventh switches connected in electrical series between the first node and an output node.
The above and other objects and features of the disclosure will become apparent by describing in detail exemplary embodiments thereof with reference to the accompanying drawings.
Below, embodiments of the disclosure may be described in detail and clearly to such an extent that an ordinary one in the art easily implements the disclosure.
The panel 11 may provide interfacing with a user. For example, the user may view various information output from the electronic device 10 through the panel 11. Alternatively, the user may input various information to the electronic device 10 through the panel 11. To this end, the panel 11 may include a touch panel for sensing a touch of the user or a display panel for displaying information to the user.
The fingerprint sensor 100 may sense a fingerprint of the user and may perform an authentication operation based on the sensed fingerprint. That is, the fingerprint sensor 100 may be a fingerprint detection sensor or a fingerprint recognition sensor that provides a user authentication function. In an example embodiment, the fingerprint sensor according to the disclosure may be a capacitive fingerprint sensor that operates in a passive manner However, the disclosure is not limited thereto.
As illustrated in
In an example embodiment, the fingerprint sensor 100 may be implemented with one chip (i.e., a single chip). For example, the fingerprint sensor 100 may include a fingerprint pixel array for detecting a fingerprint of the user and a controller for driving the fingerprint pixel array, and the fingerprint pixel array and the controller may be formed on the same semiconductor substrate.
In an example embodiment, the fingerprint pixel array included in the fingerprint sensor 100 may operate based on a first voltage level, and the controller for controlling the fingerprint pixel array included in the fingerprint sensor 100 may operate based on a second voltage level lower than a first voltage level. That is, a signal to noise ratio (SNR) for the detected fingerprint information may increase as the fingerprint pixel array of the fingerprint sensor 100 operates based on a high-voltage. Also, as the controller of the fingerprint sensor 100 operates based on a low-voltage, the fingerprint sensor 100 of high performance is provided without a separate external power circuit . An operation and a structure of the fingerprint sensor 100 will be more fully described with reference to the following drawings.
For example, the fingerprint FP of the user may be in contact with or approach first to fourth metal electrodes ME1 to ME4 of the fingerprint pixel array 110. In this case, a fingerprint capacitor may be formed between each of the first to fourth metal electrodes ME1 to ME4 and the user fingerprint FP. The fingerprint capacitor may indicate a capacitor formed between a fingerprint of the user and a metal electrode.
For example, first to fourth fingerprint capacitors CF1 to CF4 may be formed between the fingerprint FP of the user and the first to fourth metal electrodes ME1 to ME4, respectively. Values of the first to fourth fingerprint capacitors CF1 to CF4 may vary with a ridge and a valley of the user fingerprint FP.
The first and third metal electrodes ME1 and ME3 may be in contact with the ridge of the user fingerprint FP, and the second and fourth metal electrodes ME2 and ME4 may be in contact with the valley of the user fingerprint FP. In this case, values of the first and third fingerprint capacitors CF1 and CF3 on the first and third metal electrodes ME1 and ME3 may be different from values of the second and fourth fingerprint capacitors CF2 and CF4 on the second and fourth metal electrodes ME2 and ME4.
The controller 120 may receive, as fingerprint information FI, values of the first to fourth fingerprint capacitors CF1 to CF4 formed by the user fingerprint FP on the first to fourth metal electrodes ME1 to ME4 and may sense the user fingerprint FP based on the fingerprint information FI. In an example embodiment, the fingerprint information H may be an analog voltage or an analog signal that is based on a high-voltage.
In an example embodiment, the first to fourth metal electrodes ME1 to ME4 of the fingerprint pixel array 110 may be driven based on a first voltage, and the controller 120 may process the fingerprint information H, based on a second voltage lower than the first voltage.
The controller 120 may include a voltage conversion circuit 121, an analog circuit (analog front end: AFE) 122, a multiplexer 123, a control circuit 124, an analog to digital converter (ADC) 125, a digital signal processor (DSP) 126, a voltage generator 127, and a high-voltage pulse generator 128.
The voltage conversion circuit 121 may be configured to convert a level of the fingerprint information FI from the fingerprint pixel PIX of the fingerprint pixel array 110. For example, as described above, the fingerprint pixel PIX of the fingerprint pixel array 110 may operate based on a high-voltage. That is, various elements (e.g., a switch) included in the fingerprint pixel PIX may be a high-voltage-based element. In this case, the fingerprint information FI output from the fingerprint pixel PIX may be a signal that is based on a high-voltage level. The voltage conversion circuit 121 may convert the high-voltage level of the fingerprint information FI output from the fingerprint pixel PIX to a low-voltage level. In an example embodiment, the voltage conversion circuit 121 may perform the above-described voltage conversion operation by using a high-voltage VH from the voltage generator 127 under control of the control circuit 124.
The analog circuit 122 may be configured to process a signal converted by the voltage conversion circuit 121. For example, the analog circuit 122 may be configured to process a signal converted by the voltage conversion circuit 121 by using a low-voltage VL from the voltage generator 127 under control of the control circuit 124. That is, various elements included in the analog circuit 122 may be elements that are based on a low-voltage.
The multiplexer 123 may multiplex a signal processed by the analog circuit 122. For example, the analog circuit 122 may process the fingerprint information FI from a plurality of fingerprint pixels simultaneously or sequentially. The multiplexer 123 may sequentially provide signals processed by the analog circuit 122 to the ADC125 under control of the control circuit 124.
The control circuit 124 may control overall operations of the controller 120. For example, to detect the user fingerprint FP, the control circuit 124 may control the fingerprint pixel PIX, the voltage conversion circuit 121, the analog circuit 122, and the multiplexer 123. In an example embodiment, the control circuit 124 may generate various control signals or various switching signals, which are used to control the above-described components.
The ADC125 may convert a signal from the multiplexer 123 to a digital signal and may provide the digital signal to the digital signal processor (DSP) 126. The DSP 126 may process the digital signal from the ADC125 to finally generate an image of a user fingerprint.
The voltage generator 127 may generate the high-voltage VH and the low-voltage VL. In an example embodiment, the high-voltage VH may be a voltage that is used to drive the fingerprint pixel PIX of the fingerprint pixel array 110. The low-voltage VL may be a voltage that is used in the analog circuit 122.
The high-voltage pulse generator 128 may generate a high-voltage pulse VHP by using the high-voltage VH. In an example embodiment, the high-voltage pulse VHP may be provided to the fingerprint pixel PIX for the purpose of sensing the user fingerprint FP.
The controller 120 illustrated in
Also, to describe the technical idea of the disclosure easily, components are illustrated as being independent of each other. However, the disclosure is not limited thereto. For example, the voltage conversion circuit 121 may be included in the analog circuit 122, or the high-voltage pulse generator 128 may be included inside the fingerprint pixel PIX. Although not illustrated in
Referring to
The high-voltage pulse generator 128 may include a first high-voltage switch HSW1 and a second high-voltage switch HSW2. A first end of the first high-voltage switch HSW1 may receive the high-voltage VH, and a second end thereof may be connected with a sensing node sn. A first end of the second high-voltage switch HSW2 may be connected with a ground terminal, and a second end thereof may be connected with the sensing node sn. The high-voltage pulse VHP may be generated by operations of the first and second high-voltage switches HSW1 and HSW2. The high-voltage pulse VHP may be provided to the fingerprint pixel PIX.
The fingerprint pixel PIX may include a metal electrode ME, a shielding electrode SE, and a third high-voltage switch HSW3. The metal electrode ME may be connected with the sensing node sn. The metal electrode ME may be an electrode for sensing a change in capacitance due to the user fingerprint FP. That is, a value that corresponds to a fingerprint capacitor CF between the metal electrode ME and the user fingerprint FP may be provided as the fingerprint information FI.
The shielding electrode SE may maintain the same potential as the metal electrode ME for the purpose of removing a parasitic capacitance formed on a substrate. That is, influence of the parasitic capacitance formed on the substrate may be removed by setting the shielding electrode SE and the metal electrode ME to the same potential.
A first end of the third high-voltage switch HSW3 may be connected with the sensing node sn, and a second end thereof may be connected with a first node nl. A value corresponding to the fingerprint capacitor CF may be provided to the first node n1 by an operation of the third high-voltage switch HSW3.
The voltage conversion circuit 121 may include a first middle switch MSW1, a first resistor R1, a second resistor R2, and a middle capacitor CM. A first end of the first middle switch MSW1 may be connected with the first node nl, and a second end thereof may be connected with a first end of the first resistor RE A second end of the first resistor R1 may be configured to receive the high-voltage VH. A first end of the second resistor R2 may be connected with the first end of the first resistor R1, and a second end thereof may be connected with the ground terminal. In an example embodiment, the first and second resistors R1 and R2 may have the same resistance value. That is, a voltage of the first node n1 may be maintained at VH/2 by an operation of the first middle switch MSW1.
The middle capacitor CM may be connected between the first node n1 and a second node n2. In an example embodiment, a value of the middle capacitor CM may be significantly great compared with the fingerprint capacitor CF. In an example embodiment, the middle capacitor CM may operate as a battery capacitor for maintaining a voltage of the first node n1 and a voltage of the second node n2 at specific voltages.
The analog circuit 122 may include first to sixth low-voltage switches LSW1 to LSW6, first and second reset switches RST1 and RST2, capacitors CPC, C1, C2, C3, and CN, a comparator COMP, and a differential circuit DIF. In an example embodiment, the capacitors CPC, C1, C2, C3, and CN may be variable capacitors for signal processing or for obtaining an appropriate signal gain.
A first end of the first low-voltage switch LSW1 may be connected with the ground terminal, and a second end thereof may be connected with a first end of the capacitor CPC. A first end of the second low-voltage switch LSW2 may be connected to receive the low-voltage VL, and a second end thereof may be connected with the first end of the capacitor CPC. A second end of the capacitor CPC may be connected with the ground terminal. The low-voltage pulse VLP may be generated by operations of the first and second low-voltage switches LSW1 and LSW2. In an example embodiment, a swing level (i.e., amplitude) of the low-voltage pulse VLP may be lower than a swing level (i.e., amplitude) of the high-voltage pulse VHP. A phase of the low-voltage pulse VLP may be opposite to a phase of the high-voltage pulse VHP.
The fourth low-voltage switch LSW4 may be connected between the second node n2 and the first end of the capacitor CPC. The low-voltage pulse VLP may be provided to the second node n2 by an operation of the fourth low-voltage switch LSW4.
A first input terminal (+) of the comparator COMP may be connected to receive a middle voltage VCM, a second input terminal (−) thereof may be connected with the second node n2, and an output terminal thereof may be connected with a third node n3. The first capacitor C1 may be connected between the second node n2 and the third node n3. The third low-voltage switch LSW3 may be connected between the second node n2 and the third node n3.
The capacitor CN may be connected between the third node n3 and a first end of the fifth low-voltage switch LSW5, and a second end of the fifth low-voltage switch LSW5 may be connected with a second input terminal (−) of the differential circuit DIF. The sixth low-voltage switch LSW6 may be connected between the first end of the fifth low-voltage switch LSW5 and a first input terminal (+) of the differential circuit DIF.
The second capacitor C2 may be connected between the second input terminal (−) and a first output terminal (+) of the differential circuit DIF, and the first reset switch RST1 may be connected between the second input terminal (−) and the first output terminal (+) of the differential circuit DIF. The third capacitor C3 may be connected between the first input terminal (+) and a second output terminal (−) of the differential circuit DIF, and the second reset switch RST2 may be connected between the first input terminal (+) and the second output terminal (−) of the differential circuit DIF. Outputs Vp and Vn from the differential circuit DIF may be provided to the multiplexer 123.
Referring to
In an example embodiment, since the voltage conversion circuit 121 performs a function similar to a function of a battery capacitor, voltages of the first node n1 and the second node n2 may be uniformly maintained at levels of VH/2 and VCM, respectively. In this case, only information from the fingerprint capacitor CF may be provided from the first node n1 to the second node n2. For example, the voltage Vsn of the sensing node sn may be expressed by the following Equation1.
In Equation 1, “Vsn” is a voltage of the sensing node sn, “CF” is a value of the fingerprint capacitor CF between the metal electrode ME and the user fingerprint FP, “CM” is a value of the middle capacitor CM, and “VH” is a high-voltage. In an example embodiment, the high-voltage VH may be approximately 10 V. In an example embodiment, a value of the fingerprint capacitor CF may be very small compared with a value of the middle capacitor CM. In this case, a voltage Vbo of the third node n3 may be expressed by the following Equation 2.
In Equation 2, “Vbo” is a voltage of the third node n3, and “C1” is a capacitance value of the first capacitor C1. The remaining factors are described above, and thus, a detailed description thereof will not be repeated here. As expressed by Equation 2, in the case where a value of the middle capacitor CM is much greater than a value of the fingerprint capacitor CF, the voltage Vbo of the third node n3 may be expressed as a function for the fingerprint capacitor CF. That is, in the case where the value of the middle capacitor CM is much greater than the value of the fingerprint capacitor CF, the value of the fingerprint capacitor CF may be normally detected, and the output voltages Vp and Vn may not be almost changed due to the middle capacitor CM.
Referring to
The third high-voltage switch HSW3 and the fourth low-voltage switch LSW4 may operate in response to the third switching signal SS3. The middle switch MSW1 and the third low-voltage switch LSW3 may operate in response to the fourth switching signal SS4. In an example embodiment, the third and fourth switching signals SS3 and SS4 may be complementary.
The fifth low-voltage switch LSW5 may operate in response to the fifth switching signal SSS. The sixth low-voltage switch LSW6 may operate in response to the sixth switching signal SS6.
Continuing to refer to
Afterwards, at a first time-point t1, the third high-voltage switch HSW3 and the fourth low-voltage switch LSW4 may be turned on in response to the third switching signal SS3. In this case, a voltage of the sensing node sn may be provided to the second node n2 by an operation of the third high-voltage switch HSW3, and thus, the voltage Vbo may increase by a predetermined level.
Afterwards, at a second time-point t2, the second high-voltage switch HSW2 and the second low-voltage switch LSW2 may be turned on in response to the second switching signal SS2. In this case, the high-voltage pulse VHP is a ground voltage, and the low-voltage pulse VLP is the low-voltage VL. Also, as the middle switch MSW and the third low-voltage switch LSW3 are turned on in response to the fourth switching signal SS4, a voltage of the first node n1 is VH/2, and a voltage of the second node n2 and the voltage Vbo of the third node n3 are the middle voltage VCM. As the fifth low-voltage switch LSW5 is turned on in response to the fifth switching signal SS5, the second output voltage Vn may decrease by a predetermined level. The reason is that the voltage Vbo decreases.
Afterwards, at a third time-point t3, the third high-voltage switch HSW3 and the fourth low-voltage switch LSW4 may be turned on in response to the third switching signal SS3. In this case, a voltage of the sensing node sn may be provided to the second node n2 by an operation of the third high-voltage switch HSW3, and thus, the voltage Vbo may decrease by a predetermined level. The reason is that the voltage of the sensing node sn decreases to a ground level by the operation corresponding to the second time-point t2. The second output voltage Vn may decrease by a predetermined level depending on a change in the voltage Vbo of the third node n3.
Afterwards, at a fourth time-point t4, the first high-voltage switch HSW1 and the first low-voltage switch LSW1 may be turned on in response to the first switching signal SS1. In this case, the high-voltage pulse VHP is the high-voltage VH, and the low-voltage pulse VLP is the ground voltage. Also, as the middle switch MSW and the third low-voltage switch LSW3 are turned on in response to the fourth switching signal SS4, a voltage of the first node n1 is VH/2, and a voltage of the second node n2 is the middle voltage VCM. Accordingly, the voltage of the third node n3 may be the middle voltage VCM. As the sixth low-voltage switch LSW6 is turned on in response to the sixth switching signal SS6, the first output voltage Vp may increase by a predetermined level.
Afterwards, at a fifth time-point t5, the third high-voltage switch HSW3 and the fourth low-voltage switch LSW4 may be turned on in response to the third switching signal SS3. In this case, a voltage of the sensing node sn may be provided to the second node n2 by an operation of the third high-voltage switch HSW3, and thus, the voltage Vbo may increase by a predetermined level. The reason is that the voltage of the sensing node sn increases to a high-voltage level by the operation corresponding to the fourth time-point t2. The first output voltage Vp may increase by a predetermined level depending on a change in the voltage Vbo of the third node n3.
As the above operation is repeatedly performed, the first output voltage Vp may gradually increase, and the second output voltage Vn may gradually decrease. An output voltage that is finally output may be expressed by the following Equation 3.
In Equation 3, “Vp” and “Vn” indicate first and second output voltages, respectively, “CS” indicates a parasitic capacitance value between the sensing node sn and the substrate as illustrated in
As expressed by Equation 3, the analog circuit 122 may accumulate a signal from the fingerprint pixel PIX to output the first and second output voltages Vp and Vn. In this case, as described with reference to Equation 2, in the case where a value of the middle capacitor CM is very great compared with a value of the fingerprint capacitor CF, the voltage Vbo of the third node n3 may be the same as a value calculated by Equation 2. In the case of combing Equation 2 and Equation 3, the final output voltages Vp and Vn may be expressed as a function of the voltage Vbo of the third node n3. Also, as expressed by Equation 2, the voltage Vbo of the third node n3 may be a function for the fingerprint capacitor CF.
That is, in conclusion, the first and second output voltages Vp and Vn output from the analog circuit 122 according to the disclosure may be expressed as a function for the fingerprint capacitor CF. In other words, a value of the fingerprint capacitor CF may be derived based on the first and second output voltages Vp and Vn, and information about the user fingerprint FP may be obtained based on the derived value.
As described above, the fingerprint sensor 100 according to the disclosure may finally obtain information about a user fingerprint by driving the fingerprint pixel PIX by using the high-voltage VH and processing a signal from the fingerprint pixel PIX by using the low-voltage VL. That is, a signal to noise ratio (SNR) of an output signal from the fingerprint pixel PIX may increase by driving the fingerprint pixel PIX by using the high-voltage VH. Also, the fingerprint sensor 100 may be driven without a separate external power source and a separate power circuit by driving the analog circuit 122 by using the low-voltage VL. Accordingly, a fingerprint sensor of improved performance is provided with reduced costs.
Referring to
The fingerprint pixel array 210 may include the first and second fingerprint pixels PIX1 and PIX2. The first fingerprint pixel PIX1 may include a first metal electrode ME1 a first shielding electrode SE1, and a first fingerprint pixel circuit 211. The second fingerprint pixel PIX2 may include a second metal electrode ME2, a second shielding electrode SE2, and a second fingerprint pixel circuit 212. Below, since the first and second fingerprint pixels PIX1 and PIX2 have similar structures, an example embodiment of the disclosure will be described with reference to the first fingerprint pixel PIX1.
The first metal electrode ME1 of the first fingerprint pixel PIX1 that is an electrode being in contact with the user fingerprint FP may be an electrode for detecting the fingerprint capacitor CF. The first shielding electrode SE1 may be an electrode that is driven with a specific voltage for the purpose of removing influence of a parasitic capacitor between the first metal electrode ME1 and a substrate (not illustrated).
For example, since a value of the above-described fingerprint capacitor CF varies with a ridge or a valley of the user fingerprint FP, the value of the fingerprint capacitor CF may be very small (e.g., approximately 10 fF). In contrast, a value of a parasitic capacitor between the first metal electrode ME1 and the substrate may be great compared with a value of the fingerprint capacitor CF. In this case, as expressed by Equation 3, a value of the fingerprint capacitor CF may not be accurately detected due to influence of a relatively large parasitic capacitor CS. This may mean that a ridge and a valley are not accurately detected from the user fingerprint FP. In this case, the above-described influence of the parasitic capacitor may be canceled out or removed by maintaining a voltage of the first shielding electrode SE1 positioned under the first metal electrode ME1 to be the same as a voltage of the first metal electrode ME1.
To control a potential of a shielding electrode, a conventional fingerprint sensor controls the potential of the shielding electrode through an active block (e.g., a unit gain buffer) connected between a metal electrode and the shielding electrode in the same fingerprint pixel. In this case, the use of the active block may cause an increase in power consumption. Also, due to a gain difference of active blocks of fingerprint pixels, shielding potentials of the fingerprint pixels may be different from each other, thereby causing an output error of a fingerprint pixel.
The first fingerprint pixel circuit 211 according to the disclosure may control a potential of the first shielding electrode SE1 based on signals provided to peripheral fingerprint pixels, without using an active block. In this case, power consumption may be reduced. Also, since the potential of the first shielding electrode SE1 is controlled by using signals provided to peripheral fingerprint pixels, an error occurring in the first shielding electrode SE1 may be the same as an error occurring in the peripheral fingerprint pixels. Accordingly, an error of each fingerprint pixel may be easily removed or compensated.
For example, in the case where the first fingerprint pixel PIX1 operates as an active pixel, the second fingerprint pixel PIX2 may operate as a shielding pixel. In an example embodiment, the active pixel may indicate a pixel for actually detecting the fingerprint capacitor CF formed by the user fingerprint FP, and the shielding pixel may indicate a pixel for maintaining the same potential as the active pixel for the purpose of maintaining a direction of an electric field from a metal electrode of the active pixel. The shielding pixel may be a pixel adjacent to the active pixel.
In this case, the first metal electrode ME1 of the first fingerprint pixel PIX1 is used as an electrode for detecting the fingerprint capacitor CF formed by the user fingerprint FP. Here, the first shielding electrode SE1 of the first fingerprint pixel PIX1 may not be directly connected with the first metal electrode ME1 and may maintain a specific potential in response to a control signal CTRL (e.g., the high-voltage pulse VHP or a middle high-voltage VHCM) provided from the controller 220. The second metal electrode ME2 and the second shielding electrode SE2 of the second fingerprint pixel PIX2 may be directly connected with each other, and may maintain a specific potential in response to the control signal CTRL (e.g., the high-voltage pulse VHP or a middle high-voltage VHCM) provided from the controller 220.
The above-described control signal CTRL may be provided to the first shielding electrode SE1, the second metal electrode ME2, and the second shielding electrode SE2 through a plurality of switches included in the first fingerprint pixel circuit 211 and the second fingerprint pixel circuit 212.
Referring to
The main RX signal RXM and main TX signal TXM may be signals for selecting an active pixel of fingerprint pixels included in the fingerprint pixel array 210. The dummy RX signal RXD, the first dummy TX signal TXD1, and the second dummy TX signal TXD2 may be signals for selecting shielding pixels. In an example embodiment, the main RX signal RXM and the dummy RX signal RXD may be signals that are provided to select a channel of a row direction in the arrangement of a plurality of fingerprint pixels included in the fingerprint pixel array 210, and the main TX signal TXM, the first dummy TX signal TXD1, and the second dummy TX signal TXD2 may be signals that are provided to select a channel of a column direction in the arrangement of the plurality of fingerprint pixels included in the fingerprint pixel array 210. However, the disclosure is not limited thereto.
The first fingerprint pixel PIX1 may include the first metal electrode ME1, the first shielding electrode SE1, and the first fingerprint pixel circuit 211. The first metal electrode ME1 and the first shielding electrode SE1 are described above, and thus, a detailed description thereof will not be repeated here.
The first fingerprint pixel circuit 211 may include first to seventh switches SW1 to SW7. In an example embodiment, the first to seventh switches SW1 to SW7 may each be a high-voltage switch.
The first switch SW1 may be connected between the sensing node sn and a shielding node sdn. The second switch SW2 may be connected between the shielding node sdn and the middle high-voltage VHCM. A first end of the third switch SW3 may be connected to the shielding node sdn, and a second end thereof may be connected with a first end of the fifth switch SW5. A second end of the fifth switch SW5 may be configured to receive the high-voltage pulse VHP. A first end of the fourth switch SW4 may be connected with the first end of the fifth switch SW5, and a second end thereof may be connected with the sensing node sn. The sixth and seventh switches SW6 and SW7 may be connected in series between the sensing node sn and the voltage conversion circuit 221.
The first switch SW1 may operate in response to an OR combination of an inverted main RX signal RXM/and the second dummy TX signal TXD2. For example, in the case where at least one of the inverted main RX signal RXM/and the second dummy TX signal TXD2 is at a high level, the first switch SW1 may be turned on. As the first switch SW1, the first metal electrode ME1 and the first shielding electrode SE1 may be connected with each other through the first switch SW1. For example, the first shielding electrode SE1 is connected with the shielding node sdn, and the first metal electrode ME1 is connected with the sensing node sn. As the first switch SW1 is turned on, the sensing node sn and the shielding node sdn may be electrically connected, and thus, the first metal electrode ME1 and the first shielding electrode SE1 may be connected with each other.
The second switch SW2 may operate in response to the first dummy TX signal TXD1. For example, the second switch SW2 may provide the middle high-voltage VHCM to the shielding node sdn in response to the first dummy TX signal TXD1 of the high level.
The third and fourth switches SW3 and SW4 may operate in response to the first dummy TX signal TXD1.
The fifth switch SW5 may operate in response to the dummy RX signal RXD. For example, as the fifth switch SW5 is turned on in response to the dummy RX signal RXD of the high level, the high-voltage pulse VHP may be provided between the third and fourth switches SW3 and SW4.
The sixth switch SW6 and the seventh switch SW7 may operate in response to the main TX signal TXM and the main RX signal RXM, respectively. For example, as the sixth switch SW6 and the seventh switch SW7 are respectively turned on in response to the main TX signal TXM of the high level and the main RX signal RXM of the high level, a voltage of the sensing node sn may be provided to the voltage conversion circuit 221.
In an example embodiment, in the case where the first fingerprint pixel PIX1 is an active pixel, the first switch SW1 may be turned off, and the second to seventh switches SW2 to SW7 may be turned on. As the first switch SW1 is turned off, the first shielding electrode SE1 may not be directly connected with the first metal electrode ME1, and a potential of the first shielding electrode SE1 may be adjusted by the middle high-voltage VHCM and the high-voltage pulse VHP. In this case, the middle high-voltage VHCM and the high-voltage pulse VHP may correspond to signals that are provided to peripheral fingerprint pixels (i.e., shielding pixels) adjacent to the active pixel. In other words, not a potential of the first metal electrode ME1 but a potential of the first shielding electrode SE1 may be controlled based on signals that are provided to peripheral fingerprint pixels (i.e., shielding pixels), without using a separate active block.
In an example embodiment, various control signals illustrated in
In
To detect the fingerprint capacitor CF through the active pixels, the controller 220 may generate various control signals CTRL (e.g., RXM, RXD, TXM, TXD1, TXD2, and VHP) as illustrated in
For example, the controller 220 may provide the main RX signal RXM of the high level to fingerprint pixels arranged at the 6th to 13th rows R06 to R13 and may provide the main RX signal RXM of the low level to the remaining fingerprint pixels (i.e., fingerprint pixels arranged at the rows R01 to R05 and R14 to R20). That is, the main RX signal RXM may be a signal for selecting rows (or channels) where active pixels are disposed.
The controller 220 may provide the dummy RX signal RXD of the high level to fingerprint pixels arranged at the 4th to 15th rows R04 to R15 and may provide the dummy RX signal RXD of the low level to the remaining fingerprint pixels (i.e., fingerprint pixels arranged at the rows R01 to R03 and R16 to R20). That is, the dummy RX signal RXD may be a signal for selecting rows (or channels) where active pixels and shielding pixels are disposed.
The controller 220 may provide the main TX signal TXM of the high level to fingerprint pixels arranged at the 9th column C09 and may provide the main TX signal TXM of the low level to the remaining fingerprint pixels (i.e., fingerprint pixels arranged at the rows C01 to C08 and C10 to C16). That is, the main TX signal TXM may be a signal for selecting a column (or a channel) where active pixels are disposed.
The controller 220 may provide the first dummy TX signal TXD1 of the high level to fingerprint pixels arranged at the 7th to 11th columns C07 to C11 and may provide the first dummy TX signal TXD1 of the low level to the remaining fingerprint pixels (i.e., fingerprint pixels arranged at the columns C01 to C06 and C12 to C16). That is, the first dummy TX signal TXD1 may be a signal for selecting columns where active pixels and shielding pixels are disposed.
The controller 220 may provide the second dummy TX signal TXD2 of the high level to fingerprint pixels arranged at the 7th, 8th, 10th, and 11th columns C07, C08, C10, and C11 and may provide the second dummy TX signal TXD2 of the low level to the remaining fingerprint pixels (i.e., fingerprint pixels arranged at the columns C01 to C06, C09, and C12 to C16). That is, the second dummy TX signal TXD2 may be a signal for selecting columns where shielding pixels are disposed.
The controller 220 may provide the high-voltage pulse VHP (indicated in
In an example embodiment, the way to provide the above-described control signals is exemplary and may be variously changed or modified. For example, the above-described control signals may be variously changed or modified depending on the number of active pixels, the arrangement of a column or row direction, the number of shielding pixels, or the arrangement of the column or row direction.
First, referring to
In an example embodiment, as the first switch SW1 is turned off, the shielding electrode SE may not be directly connected with the metal electrode ME. However, as described above, the shielding electrode SE may maintain a specific potential by the middle high-voltage VHCM and the high-voltage pulse VHP provided to adjacent fingerprint pixels.
Next, referring to
Then, referring to
After that, referring to
Table 1 shows signals provided depending on locations of fingerprint pixels, which are determined based on an active pixel in the fingerprint pixel array 210.
Also, control signals of Table 1 associated with locations of fingerprint pixels are described with reference to
Table 2 shows potentials of a metal electrode and a shielding electrode in each fingerprint pixel, and the potentials are determined depending on the control signals of Table 1.
Referring to Table 2, in shielding pixels, since the metal electrode ME and the shielding electrode SE are connected with each other, the metal electrode ME and the shielding electrode SE may have a potential of VH-VHCM-GND.
In contrast, the metal electrode ME and the shielding electrode SE of an active pixel are not connected. However, as described above, since the shielding electrode SE of the active pixel maintains a potential based on signals provided to adjacent fingerprint pixels, the shielding electrode SE may have a potential of VH-VHCM-GND.
As described above, metal electrodes and shielding pixels of shielding pixels adjacent to an active pixel may be maintained at a specific potential by operations of a plurality of switches included in a fingerprint pixel circuit . Also, a shielding electrode of an active pixel may maintain a specific potential by using signals provided to adjacent fingerprint pixels, without using a separate active block. Accordingly, a fingerprint sensor of improved performance is provided with reduced costs.
For example, fingerprint pixels positioned at intersections of the 3rd to 10th rows R03 to R10 and the 3rd column C03 may be selected as active pixels. In an example embodiment, fingerprint pixels positioned at the periphery of the fingerprint pixel array 210 may be dummy fingerprint pixels for shielding (i.e., shielding-dedicated fingerprint pixels). However, the disclosure is not limited thereto. For example, fingerprint pixels positioned at the periphery of the fingerprint pixel array 210 may also be selected as an active pixel. The controller 220 may generate control signals as described above, such that adjacent fingerprint pixels surrounding the centered active pixel operate as a shielding pixel.
After a fingerprint sensing operation for fingerprint pixels positioned at the 3rd to 10th rows R03 to R10 and the 3rd column C03 are completed, fingerprint pixels (i.e., fingerprint pixels positioned at the 3rd to 10th rows R03 to R10 and the 4th column C04) positioned at a next column may be selected as active pixels. As in the above description, the controller 220 may generate control signals. The fingerprint sensor 200 may repeatedly perform the above-described operation to select fingerprint pixels positioned at the 3rd to 10th rows R03 to R10 and the 10th column C10 may be selected as active pixels.
After performing a fingerprint sensing operation on one channel (i.e., a channel of a row direction), the fingerprint sensor 200 may perform a fingerprint sensing operation on a next channel (i.e., a channel of another row direction). The fingerprint sensor 200 may obtain the full fingerprint image by performing a fingerprint sensing operation on one frame through the iteration of the above-described operation.
In an example embodiment, signals output from active pixels may be provided to a DSP through a voltage conversion circuit , an analog circuit , a multiplexer, and an ADC described above, and the DSP may finally obtain a fingerprint image.
In operation S120, the fingerprint sensor 200 may disconnect a metal electrode and a shielding electrode of the first fingerprint pixel. In an example embodiment, the disconnection of operation S120 means that a direct connection of the metal electrode and the shielding electrode through the first switch SW1 is interrupted.
In operation S130, the fingerprint sensor 200 may control a potential of the shielding electrode SE by using signals provided to adjacent fingerprint pixels. For example, as described above, the fingerprint sensor 200 may control a potential of the shielding electrode of the first fingerprint pixel by using the middle high-voltage VHCM and the high-voltage pulse VHP provided to adjacent fingerprint pixels.
In operation S140, the fingerprint sensor 200 may detect fingerprint information from the first fingerprint pixel. For example, as described above, the fingerprint sensor 200 may detect information of the fingerprint capacitor CF formed on the metal electrode ME of the first fingerprint pixel.
In
In an example embodiment, the fingerprint sensor 100/200 described with reference to
The fingerprint pixel array 1210 may be included in the panel 1100. For example, the fingerprint pixel array 1210 may be formed on a display panel or a touch panel included in the panel 1100. Alternatively, the fingerprint pixel array 1210 may be implemented with a separate chip and may constitute the panel 1100 together with the display panel or the touch panel.
The fingerprint pixel array 1210 may include pixels described with reference to
In an example embodiment, the controller 1220 may control the controller described with reference to
An electronic device 2000 may include a touch sensor panel 2100, a touch processor 2102, a display panel 2200, a display driver 2202, a fingerprint sensor 2300, a buffer memory 2400, a nonvolatile memory 2500, an image processor 2600, a communication block 2700, an audio processor 2800, and a main processor 2900. For example, the electronic device 2000 may be one of various electronic devices such as a portable communication terminal, a personal digital assistant (PDA), a portable media player (PMP), a digital camera, a smartphone, a tablet computer, a laptop computer, and a wearable device.
The fingerprint sensor 2300 may be the fingerprint sensor described with reference to
The buffer memory 2400 may store data that are used to operate the electronic device 2000. For example, the buffer memory 2400 may temporarily store data processed or to be processed by the main processor 2900. For example, the buffer memory 2400 may include a volatile memory such as a static random access memory (SRAM), a dynamic RAM (DRAM), or a synchronous DRAM (SDRAM), and/or a nonvolatile memory such as a phase-change RAM (PRAM), a magneto-resistive RAM (MRAM), a resistive RAM (ReRAM), or a ferroelectric RAM (FRAM).
The nonvolatile memory 2500 may store data regardless of power supply. For example, the nonvolatile memory 2500 may include at least one of various nonvolatile memories such as a flash memory, a PRAM, an MRAM, a ReRAM, and a FRAM. For example, the nonvolatile memory 2500 may include an embedded memory and/or a removable memory of the electronic device 2000.
The image processor 2600 may receive a light through a lens 2610. An image sensor 2620 and an image signal processor 2630 included in the image processor 2600 may generate image information about an external object, based on the received light.
The communication block 2700 may exchange signals with an external device/system through an antenna 2710. A transceiver 2720 and a modulator/demodulator (MODEM) 2730 of the communication block 2700 may process signals exchanged with the external device/system, based on at least one of various wireless communication protocols: long term evolution (LTE), worldwide interoperability for microwave access (WiMax), global system for mobile communication (GSM), code division multiple access (CDMA), Bluetooth, near field communication (NFC), wireless fidelity (Wi-Fi), and radio frequency identification (RFID).
The audio processor 2800 may process an audio signal by using an audio signal processor 2810. The audio processor 2800 may receive an audio input through a microphone 2820 or may provide an audio output through a speaker 2830.
The main processor 2900 may control overall operations of the electronic device 2000. The main processor 2900 may control/manage operations of components of the electronic device 2000. The main processor 2900 may process various operations associated with functions of the electronic device 2000.
A fingerprint sensor according to the disclosure may drive a pixel based on a high-voltage and may drive an analog circuit based on a low-voltage. A signal noise ratio (SNR) may be improved by driving the pixel based on the high-voltage. Also, since the analog circuit operates based on the low-voltage, the analog circuit may operate without a separate external power circuit .
In addition, the fingerprint sensor according to the disclosure may maintain a shielding electrode of an active pixel at a specific potential without a separate active block (e.g., a unit gain buffer). Accordingly, the fingerprint sensor of improved performance is provided with reduced costs.
As is traditional in the field, embodiments may be described and illustrated in terms of blocks which carry out a described function or functions. These blocks, which may be referred to herein as units or modules or the like, are physically implemented by analog and/or digital circuit s such as logic gates, integrated circuit s, microprocessors, microcontrollers, memory circuit s, passive electronic components, active electronic components, optical components, hardwired circuit s and the like, and may optionally be driven by firmware and/or software. The circuit s may, for example, be embodied in one or more semiconductor chips, or on substrate supports such as printed circuit boards and the like. The circuit s constituting a block may be implemented by dedicated hardware, or by a processor (e.g., one or more programmed microprocessors and associated circuit ry), or by a combination of dedicated hardware to perform some functions of the block and a processor to perform other functions of the block. Each block of the embodiments may be physically separated into two or more interacting and discrete blocks without departing from the scope of the disclosure. Likewise, the blocks of the embodiments may be physically combined into more complex blocks without departing from the scope of the disclosure.
While the disclosure has been described with reference to exemplary embodiments thereof, it will be apparent to those of ordinary skill in the art that various changes and modifications may be made thereto without departing from the spirit and scope of the disclosure as set forth in the following claims.
Number | Date | Country | Kind |
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10-2018-0003770 | Jan 2018 | KR | national |