The present invention relates to flash memory devices and methods for making the same, and in particular to improving the gate breakdown and endurance of flash memory devices.
Flash memory devices have found increasing use in all manners of electronic products. For example, flash memory devices are used in digital cameras, personal digital assistants (PDAs) and cellular telephones, to name just a few products. A cross-section of a portion of a flash memory device is depicted in prior art
The first polysilicon layer 14 is formed on the STI regions 12 with narrow spacings. The second polysilicon layer 18 fills the gap in the narrow space to form the floating gate structure. Referring now to
These and other needs are met by embodiments of the present invention which provide a flash memory device having a floating gate structure, comprising a semiconductor substrate and a shallow trench isolation (STI) structure formed in the substrate. A first polysilicon layer is provided over the substrate and the STI structure. A recess is formed within the first polysilicon layer over the STI structure and extends through the first polysilicon layer to the STI structure. Oxide fill is provided within the recess, and an oxide-nitride-oxide (ONO) layer conformally covers the oxide fill and the first polysilicon layer. A second polysilicon layer covers the ONO layer.
The oxide fill within the recess, in accordance with embodiments of the present invention, increases the distance between the second polysilicon layer and the source/drain silicon at the corner of the STI region. Hence, a mis-alignment will not create the problems of endurance, potential weak spots for gate leakage and low gate breakdown voltage as in conventional memory structures.
The earlier stated needs are also met by embodiments of the present invention which provide a method of forming a floating gate transistor comprising the steps of forming a shallow trench isolation (STI) and first polysilicon layer in an arrangement with recesses. Dielectric spacer material is formed in the bottom of the recesses. An oxide-nitride-oxide (ONO) layer is formed on the dielectric spacer material and the first polysilicon layer. A second polysilicon layer is then formed on the ONO layer.
In other embodiments of the invention, a method of forming a flash memory device is provided comprising the steps of forming the first polysilicon layer over a substrate having a STI region. A recess is etched in the first polysilicon layer over the STI region, the recess extending at least to the STI region. Oxide is deposited in the recess, and an ONO layer is formed over the oxide and the recess and over the first polysilicon layer. The second polysilicon layer is then formed on the ONO layer.
The foregoing and other features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompany drawings.
The present invention addresses and solves problems related to the potential mis-alignment in the lithographic printing of a first polysilicon layer to a shallow trench isolation region in the flash memory device. Mis-alignment problems create concerns such as endurance, potential weak spots for gate leakage, and low gate breakdown voltage. The invention solves these problems, in part, by providing a dielectric film material, such as an oxide, within the recesses formed in the polysilicon layer over the shallow trench isolation regions. The dielectric spacer material, such as an oxide, remains inside the narrow spaces within the polysilicon layer and increases the distance between the second polysilicon layer to source/drain regions of the silicon. Hence, even if there is a mis-alignment in the narrow spaces of the first polysilicon layer, there is a minimum distance that will be provided between the second polysilicon layer and the underlying silicon.
In order to overcome these concerns, as depicted in
Following the deposition of the dielectric spacer material 40, a blanket etch back is performed, the results of which are depicted in
A conventional etching technique may be performed to blanket etch back the dielectric spacer material 42. For example, when the dielectric spacer material 42 is an oxide, a buffered oxide etch will selectively etch the oxide in the dielectric spacer material 42 without substantially etching the first polysilicon layer 34 or the silicon substrate 30. Timing of the buffered oxide etch provides a desired control in the blanket etch back of the dielectric spacer material 42.
An ONO layer 44 is then deposited, as depicted in
Following the formation of the ONO layer depicted in
As will be appreciated from
Though the present invention has been described and illustrated in detail, it is to be clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, the scope of the present invention being limited only by the terms of the appended claims.
This application is a divisional of U.S. patent application Ser. No. 10/819,162, filed Apr. 7, 2004, now U.S. Pat. No. 7,067,388, the contents of which are hereby incorporated by reference.
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Number | Date | Country | |
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Parent | 10819162 | Apr 2004 | US |
Child | 11432495 | US |