Organic semiconducting materials can be used in electronic devices such as organic photovoltaic (OPV) cells, organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).
For efficient and long lasting performance, it is desirable that the organic semiconducting material-based devices show high charge carrier mobility and high stability, in particular towards oxidation, under ambient conditions.
Furthermore, it is desirable that the organic semiconducting materials are compatible with liquid processing techniques as liquid processing techniques are convenient from the point of processability, and thus allow the production of low cost organic semiconducting material-based electronic devices. In addition, liquid processing techniques are also compatible with plastic substrates, and thus allow the production of light weight and flexible organic semiconducting material-based electronic devices.
Perylene bisimide-based organic semiconducting materials suitable for use in electronic devices are known in the art.
R. Schmidt, J. H. Oh, Y.-S. Sun, M. Deppisch, A.-M. Krause, K. Radacki, H. Braunschweig, M. Könemann, P. Erk, Z. Bao and F. Würthner J. Am. Chem. Soc. 2009, 131, 6215-6228 describes halogenated perylene bisimide derivatives, for example
S. Nakazono, Y. Imazaki, H. Yoo, J. Yang, T. Sasamori, N. Tokitoh, T. Cédric, H. Kageyama, D. Kim, H. Shinokubo and A. Osuka Chem. Eur. J. 2009, 15, 7530-7533 describes the preparation of 2,5,8,11 tetraalkylated perylene tetracarboxylic acid bisimides from perylene tetracarboxylic acid bisimides
S. Nakanzono, S. Easwaramoorthi, D. Kim, H. Shinokubo, A. Osuka Org. Lett. 2009, 11, 5426 to 5429 describes the preparation of 2,5,8,11 tetraarylated perylene tetracarboxylic acid bisimides from perylene tetracarboxylic acid bisimides
U.S. Pat. No. 7,355,198 B2 describes an organic thin film transistor (OFET), which interposes an organic acceptor film between source and drain electrodes and an organic semiconductor film. The organic semiconductor film is formed of pentacene. In particular, the organic acceptor film is formed of at least one electron withdrawing material selected from a long list of compounds, including N,N′-bis(di-tert-butyphenyl)-3,4,9,10-perylenedicarboximide.
U.S. Pat. No. 7,326,956 B2 describes a thin film transistor comprising a layer of organic semiconductor material comprising tetracarboxylic diimide perylene-based compound having attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine containing groups. In one embodiment the fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compound is represented by the following structure:
wherein A1 and A2 are independently carbocyclic and/or heterocyclic aromatic ring systems comprising at least one aromatic ring in which one or more hydrogen atoms are substituted with at least one fluorine-containing group. The perylene nucleus can be optionally substituted with up to eight independently selected X groups, wherein n is an integer from 0 to 8. The X substituent groups on the perylene can include a long list of substituents, including halogens such as fluorine or chlorine.
WO 2007/093643 describes fluorinated rylenetetracarboxylic acid derivatives. Preferred compounds are of formula IBa
wherein 1, 2, 3, 4, 5 or 6 of the residues R11, R12, R13, R14, R21, R22, R23 and R24 are F,
optionally at least one of the residues R11, R12, R13, R14, R21, R22, R23 and R24, which is not F, can independently be Cl or Br, and the remaining residues are H, and
Ra and Rb are independently from each other are H or an organic residue.
WO 2008/063609 describes a compound having the following formula
wherein Q can be
wherein A, B, I, D, E, F, G and H are independently selected from a group of substituents, including, CH and CRa, wherein Ra can be selected from a list of substituents, including halogen. For example, A, B, I, D, E, F, G and H can be independently CH, C—Br or C—CN.
WO 2009/024512 describes halogen-containing perylenetetracarboxylic acid derivatives, and in particular compound IBa
wherein the residues R11, R12, R13, R14, R21, R22, R23 and R24 are Cl and/or F,
wherein 1 or 2 of the residues R11, R12, R13, R14, R21, R22, R23 and R24 can be CN, and/or, and wherein 1 of the residues R11, R12, R13, R14, R21, R22, R23 and R24 can be H, and
Ra and Rb are independently from each other are H or an organic residue.
G. Battagliari; C. Li, V. Enkelmann, K. Müllen Org. Lett. 2011, 13, 3012-3015 describe compounds of formula
G. Battagliari; Y. Zhao; C. Li, K. Müllen Org. Lett. 2011, 13, 3399-3401 describe compounds of formulae
So far, it has not been possible to prepare 2,5,8,11-tetrafluoroperylene-bis(dicarboximides).
It was the object of the present invention to provide 2,5,8,11-tetrafluoroperylene-bis(dicarboximides).
The object is solved by the compound of claim 1, the process of claim 5, and the electronic device of claim 6.
The perylene-based semiconducting compound of the present invention is of formula
wherein
C1-10-alkyl and C1-30-alkyl can be branched or unbranched. Examples of C1-10-alkyl are methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, neopentyl, isopentyl, n-(1-ethyl)propyl, n-hexyl, n-heptyl, n-octyl, n-(2-ethyl)hexyl, n-nonyl and n-decyl. Examples of C3-8-alkyl are n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, neopentyl, isopentyl, n-(1-ethyl)propyl, n-hexyl, n-heptyl, n-octyl and n-(2-ethyl)hexyl. Examples of C1-30-alkyl are C1-10-alkyl, and n-undecyl, n-dodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl and n-icosyl (C20), n-docosyl (C22), n-tetracosyl (C24), n-hexacosyl (C26), n-octacosyl (C28) and n-triacontyl (C30). Examples of C3-25-alkyl branched at the C attached to the N of formula I are isopropyl, sec-butyl, n-(1-methyl)propyl, n-(1-ethyl)propyl, n-(1-methyl)butyl, n-(1-ethyl)butyl, n-(1-propyl)butyl, n-(1-methyl)pentyl, n-(1-ethyl)pentyl, n-(1-propyl)pentyl, n-(1-butyl)pentyl, n-(1-butyl)hexyl, n-(1-pentyl)hexyl, n-(1-hexyl)heptyl, n-(1-heptyl)octyl, n-(1-octyl)nonyl, n-(1-nonyl)decyl, n-(1-decyl)undecyl, n-(1-undecyl)dodecyl and n-(1-dodecyl)tridecyl.
C2-30-alkenyl can be branched or unbranched. Examples of C2-30-alkenyl are vinyl, propenyl, cis-2-butenyl, trans-2-butenyl, 3-butenyl, cis-2-pentenyl, trans-2-pentenyl, cis-3-pentenyl, trans-3-pentenyl, 4-pentenyl, 2-methyl-3-butenyl, hexenyl, heptenyl, octenyl, nonenyl and docenyl, linoleyl (C18), linolenyl (C18), oleyl (C18), arachidonyl (C20), and erucyl (C22).
C2-30-alkynyl can be branched or unbranched. Examples of C2-30-alkynyl are ethynyl, 2-propynyl, 2-butynyl, 3-butynyl, pentynyl, hexynyl, heptynyl, octynyl, nonynyl and decynyl, undecynyl, dodecynyl, undecynyl, dodecynyl, tridecynyl, tetradecynyl, pentadecynyl, hexadecynyl, heptadecynyl, octadecynyl, nonadecynyl and icosynyl (C20).
Examples of C3-10-cycloalkyl are preferably monocyclic C3-10-cycloalkyls such as cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl and cyclooctyl, but include also polycyclic C3-10-cycloalkyls such as decalinyl, norbornyl and adamantyl.
Examples of C5-10-cycloalkenyl are preferably monocyclic C5-10-cycloalkenyls such as cyclopentenyl, cyclohexenyl, cyclohexadienyl and cycloheptatrienyl, but include also polycyclic C5-10-cycloalkenyls.
Examples of 3-14 membered cycloheteroalkyl are monocyclic 3-8 membered cycloheteroalkyl and polycyclic, for example bicyclic 7-12 membered cycloheteroalkyl.
Examples of monocyclic 3-8 membered cycloheteroalkyl are monocyclic 5 membered cycloheteroalkyl containing one heteroatom such as pyrrolidinyl, 1-pyrrolinyl, 2-pyrrolinyl, 3-pyrrolinyl, tetrahydrofuryl, 2,3-dihydrofuryl, tetrahydrothiophenyl and 2,3-dihydrothiophenyl, monocyclic 5 membered cycloheteroalkyl containing two heteroatoms such as imidazolidinyl, imidazolinyl, pyrazolidinyl, pyrazolinyl, oxazolidinyl, oxazolinyl, isoxazolidinyl, isoxazolinyl, thiazolidinyl, thiazolinyl, isothiazolidinyl and isothiazolinyl, monocyclic 5 membered cycloheteroalkyl containing three heteroatoms such as 1,2,3-triazolyl, 1,2,4-triazolyl and 1,4,2-dithiazolyl, monocyclic 6 membered cycloheteroalkyl containing one heteroatom such as piperidyl, piperidino, tetrahydropyranyl, pyranyl, thianyl and thiopyranyl, monocyclic 6 membered cycloheteroalkyl containing two heteroatoms such as piperazinyl, morpholinyl and morpholino and thiazinyl, monocyclic 7 membered cycloheteroalkyl containing one hereoatom such as azepanyl, azepinyl, oxepanyl, thiepanyl, thiapanyl, thiepinyl, and monocyclic 7 membered cycloheteroalkyl containing two hereoatom such as 1,2-diazepinyl and 1,3-thiazepinyl.
An example of a bicyclic 7-12 membered cycloheteroalkyl is decahydronaphthyl.
C6-14-aryl can be monocyclic or polycyclic. Examples of C6-14-aryl are monocyclic C6-aryl such as phenyl, bicyclic C9-10-aryl such as 1-naphthyl, 2-naphthyl, indenyl, indanyl and tetrahydronaphthyl, and tricyclic C12-14-aryl such as anthryl, phenanthryl, fluorenyl and s-indacenyl.
5-14 membered heteroaryl can be monocyclic 5-8 membered heteroaryl, or polycyclic 7-14 membered heteroaryl, for example bicyclic 7-12 membered or tricyclic 9-14 membered heteroaryl.
Examples of monocyclic 5-8 membered heteroaryl are monocyclic 5 membered heteroaryl containing one heteroatom such as pyrrolyl, furyl and thiophenyl, monocyclic 5 membered heteroaryl containing two heteroatoms such as imidazolyl, pyrazolyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, monocyclic 5 membered heteroaryl containing three heteroatoms such as 1,2,3-triazolyl, 1,2,4-triazolyl and oxadiazolyl, monocyclic 5 membered heteroaryl containing four heteroatoms such as tetrazolyl, monocyclic 6 membered heteroaryl containing one heteroatom such as pyridyl, monocyclic 6 membered heteroaryl containing two heteroatoms such as pyrazinyl, pyrimidinyl and pyridazinyl, monocyclic 6 membered heteroaryl containing three heteroatoms such as 1,2,3-triazinyl, 1,2,4-triazinyl and 1,3,5-triazinyl, monocyclic 7 membered heteroaryl containing one heteroatom such as azepinyl, and monocyclic 7 membered heteroaryl containing two heteroatoms such as 1,2-diazepinyl.
Examples of bicyclic 7-12 membered heteroaryl are bicyclic 9 membered heteroaryl containing one heteroatom such as indolyl, isoindolyl, indolizinyl, indolinyl, benzofuryl, isobenzofuryl, benzothiophenyl and isobenzothiophenyl, bicyclic 9 membered heteroaryl containing two heteroatoms such as indazolyl, benzimidazolyl, benzimidazolinyl, benzoxazolyl, benzisooxazolyl, benzthiazolyl, benzisothiazolyl, furopyridyl and thienopyridyl, bicyclic 9 membered heteroaryl containing three heteroatoms such as benzotriazolyl, benzoxadiazolyl, oxazolopyridyl, isooxazolopyridyl, thiazolopyridyl, isothiazolopyridyl and imidazopyridyl, bicyclic 9 membered heteroaryl containing four heteroatoms such as purinyl, bicyclic 10 membered heteroaryl containing one heteroatom such as quinolyl, isoquinolyl, chromenyl and chromanyl, bicyclic 10 membered heteroaryl containing two heteroatoms such as quinoxalinyl, quinazolinyl, cinnolinyl, phthalazinyl, 1,5-naphthyridinyl and 1,8-naphthyridinyl, bicyclic 10 membered heteroaryl containing three heteroatoms such as pyridopyrazinyl, pyridopyrimidinyl and pyridopyridazinyl, and bicyclic 10 membered heteroaryl containing four heteroatoms such as pteridinyl.
Examples of tricyclic 9-14 membered heteroaryls are dibenzofuryl, acridinyl, phenoxazinyl, 7H-cyclopenta[1,2-b:3,4-b′]dithiophenyl and 4H-cyclopenta[2,1-b:3,4-b′]dithiophenyl.
Examples of halogen are —F, —Cl, —Br and —I.
Examples of C1-30-alkoxy are methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-butoxy, isobutoxy, tert-butoxy, n-pentoxy, neopentoxy, isopentoxy, hexoxy, n-heptoxy, n-octoxy, n-nonoxy, n-decoxy, n-undecoxy, n-dodecoxy, n-tridecoxy, n-tetradecoxy, n-pentadecoxy, n-hexadecoxy, n-heptadecoxy, n-octadecoxy and n-nonadecoxy.
Examples of C2-5-alkylene are ethylene, propylene, butylene and pentylene.
Preferably,
More preferably,
Most preferably,
R1 and R2 are independently from each other C3-25-alkyl branched at the C attached to the N of formula 1.
Particular preferred is the compound of formula
Also part of the invention, is a process for the preparation of the compound of formula
wherein R1 and R2 are as defined above,
which process comprises the steps of
(i) treating a compound of formula (5)
wherein R1 and R2 are as defined above, and X is Cl, Br or I,
with a fluoride source.
The fluoride source can be an alkali fluoride, such as potassium fluoride. Usually the ratio of molequivalents fluoride source/compound of formula (5) is in the range of 1/1 to 30/1, preferably in the range of 10/1 to 30/1.
The reaction is usually performed at temperatures between 100° C. and 200° C., preferably between 130° C. to 180° C. The reaction is usually performed in a sealed reaction vessel.
The reaction is usually performed in an aprotic solvent. Preferred aprotic solvents are ethers such as dioxane and diglyme (bis(2-methoxyethyl)ether) or mixtures thereof.
X is preferably Cl.
The compounds of formula (5) can be prepared as described by G. Battagliari; C. Li, V. Enkelmann, K. Müllen Org. Lett. 2011, 13, 3012-3015, and G. Battagliari; Y. Zhao; C. Li, K. Müllen Org. Lett. 2011, 13, 3399-3401.
The compounds of formula (1) can be isolated by methods known in the art, such as column chromatography.
Also part of the present invention is an electronic device comprising the compound of formula (1) as semiconducting material. Preferably, the electronic device is an organic field effect transistor (OFET).
Usually, an organic field effect transistor comprises a dielectric layer, a semiconducting layer and a substrate. In addition, an organic field effect transistor usually comprises a gate electrode and source/drain electrodes.
An organic field effect transistor can have various designs.
The most common design of an organic field-effect transistor is the bottom-gate design. Examples of bottom-gate designs are shown in
Another design of an organic field-effect transistor is the top-gate design. Examples of top-gate designs are shown in
The semiconducting layer comprises the semiconducting material of the present invention. The semiconducting layer can have a thickness of 5 to 500 nm, preferably of 10 to 100 nm, more preferably of 20 to 50 nm.
The dielectric layer comprises a dielectric material. The dielectric material can be silicon dioxide, or, an organic polymer such as polystyrene (PS), poly(methylmethacrylate) (PMMA), poly(4-vinylphenol) (PVP), poly(vinyl alcohol) (PVA), benzocyclobutene (BCB), or polyimide (PI). The dielectric layer can have a thickness of 10 to 2000 nm, preferably of 50 to 1000 nm, more preferably of 100 to 800 nm.
The source/drain electrodes can be made from any suitable source/drain material, for example gold (Au) or tantalum (Ta). The source/drain electrodes can have a thickness of 1 to 100 nm, preferably from 5 to 50 nm.
The gate electrode can be made from any suitable gate material such as highly doped silicon, aluminium (Al), tungsten (W), indium tin oxide, gold (Au) and/or tantalum (Ta). The gate electrode can have a thickness of 1 to 200 nm, preferably from 5 to 100 nm.
The substrate can be any suitable substrate such as glass, or a plastic substrate such as polyethersulfone, polycarbonate, polysulfone, polyethylene terephthalate (PET) and polyethylene naphthalate (PEN). Depending on the design of the organic field effect transistor, a combination of the gate electrode and the dielectric layer can also function as substrate.
The organic field effect transistor can be prepared by methods known in the art.
For example, a bottom-gate organic field effect transistor can be prepared as follows:
The gate electrode can be formed by depositing the gate material, for example highly doped silicon, on one side of the dielectric layer made of a suitable dielectric material, for example silicium dioxide. The other side of the dielectric layer can be optionally treated with a suitable reagent, for example with hexamethyldisilazane (HMDS). Source/drain electrodes can be deposited on this side (the side which is optionally treated with a suitable reagent) of the dielectric layer for example by vapour deposition of a suitable source/drain material, for example tantalum (Ta) and/or gold (Au). The source/drain electrodes can then be covered with the semiconducting layer by solution processing, for example drop coating, a solution of the semiconducting material of the present invention in s suitable solvent, for example in chloroform.
Also part of the invention is the use of the compound of formula (1) as semiconducting material.
In
In
The advantage of the semiconducting materials of the present invention is the high solubility of these materials in solvents suitable for solution processing. In addition the semiconducting materials of the present invention show acceptable charge carrier mobility.
N,N′-Bis(1-heptyloctyl) perylene-3,4:9,10-tetracarboxylic acid bisimide (2a) (100 mg, 0.12 mmol) and bispinacolonediboronate (3a) (250 mg, 0.99 mmol) are mixed together and dissolved in 1 mL anhydrous mesitylene and 1 mL anhydrous pinacolone. Argon is bubbled through the solution for 30 minutes. RuH2(CO)(PPh3)3 (23 mg, 0.03 mmol) is added to the mixture and the reaction mixture is heated at 140° C. for 30 hours. After cooling the system to room temperature, the solvent is evaporated and the desired compound purified by column chromatography (CH2Cl2). 4a is obtained as a red solid in 70% yield (113 mg, 0.09 mmol).
1H NMR (250 MHz, CD2Cl2) δ 8.58 (s, 4H), 5.06 (s, 2H), 2.35-2.06 (m, 4H), 1.98-1.72 (m, 4H), 1.50 (s, 48H), 1.24 (s, 40H), 0.84 (t, J=6.5 Hz, 12H). 13C NMR (126 MHz, CD2Cl2) δ 166.27 (d, J=98.5 Hz), 139.79-138.86 (m), 133.80 (s), 128.82 (s), 127.57 (d, J=69.0 Hz), 127.30 (s), 126.29 (s), 84.90 (s), 55.19 (s), 32.83 (s), 32.45 (s), 30.03 (s), 29.76 (s), 27.37 (s), 25.38 (s), 23.22 (s), 14.43 (s). FD/MS (8 kV): m/z=1312.4 (100%) [M+]. UV-Vis(in toluene): λmax(∈[M−1 cm−1]): 538 nm (5.57×104). Fluorescence (in toluene, λex=538 nm): 548 nm. ΦF: 0.83. Elem. Anal.: theoretical: C, 71.24%; H, 8.74%; N, 2.13%; experimental: C, 70.76%; H, 8.27%; N, 2.50%.
N,N′-Bis(1-heptyloctyl)-2,5,8,11-tetrakis[4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-y]perylene-3,4:9,10-tetracarboxylic acid bisimide (4a), prepared as described in example 1, (1.00 g, 0.76 mmol) and copper(II) chloride (1.23 g, 9.13 mmol) are suspended in a mixture of methanol (3 mL) and water (3 mL) and heated in a closed vessel at 100° C. for 6 hours. The reaction mixture is then poured in water and extracted with dichloromethane. The organic phase is dried over magnesium sulfate and the solvent evaporated. The compound 5a is obtained as an orange solid after column chromatography (silica, dichloromethane) in 87% yield (0.628 g, 0.66 mmol).
1H NMR (250 MHz, CD2Cl2) δ 8.43 (s, 4H), 5.06 (m, 2H), 2.22-1.99 (m, 4H), 1.79 (m, 4H), 1.20 (m, 40H), 0.82-0.69 (m, 12H). FD Mass Spectrum (8 kV): m/z=947.7 (100%) [M+].
N,N′-Bis(1-heptyloctyl)-2,5,8,11-tetrachloro-perylene-3,4:9,10-tetracarboxylic acid bisimide (5a), prepared as described in example 2, (50 mg, 0.05 mmol) and potassium fluoride (61 mg, 1.05 mmol) are suspended in a mixture of dioxane (2 mL) and diglyme (1 mL) and heated in a sealed vessel at 150° C. for 20 hours in a microwave oven. The reaction mixture is then cooled down, the solvent is removed and the remaining solid is purified by column chromatography (silica gel, dichloromethane/petrol ether 2/1). The compound 1a is obtained as a yellow solid in 30% yield (13 mg, 002 mmol).
1H NMR (250 MHz, CD2Cl2) δ 8.23 (d, J=12.4 Hz, 4H), 5.15 (m, 2H), 2.18 (m, 4H), 1.82 (m, 4H), 1.25 (m, 40H), 0.92-0.73 (m, 12H). FD Mass Spectrum (8 kV): m/z=947.7 (100%) [M+]. UV-VIS (in dichloromethane): λmax: 500 nm. Fluorescence (in dichloromethane, λmax: 500 nm): 509 nm.
Number | Date | Country | |
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61522705 | Aug 2011 | US |