BACKGROUND
Technical Field
The present invention relates to a force sensor, especially relates to a force sensor having a solid-state bonding (SSB) spacer between a top stack and a bottom stack of the force sensor.
Description of Related Art
FIGS. 1A-1B, 2 and 3A-3B show a prior art.
FIG. 1A shows a prior art force sensor 100 in a status before being depressed.
FIG. 1A shows a force sensor 100 which comprises a top stack 10, a pressure sensitive adhesive (PSA) spacer 14, and a bottom stack 10B. The PSA spacer 14 is sandwiched between the top stack 10 and the bottom stack 10B. The PSA spacer 14 maintains a fixed space between the top stack 10 and the bottom stack 10B. The PSA spacer 14 has a height G11 and a width W11 in a section view before being depressed.
FIG. 1B shows the prior art force sensor 100 in a status after being depressed.
FIG. 1B shows while the force sensor 100 is depressed, PSA spacer 14 changes its dimension to a height G12 and a width W12 in a section view. The height G12 is smaller than the original height G11 and the width W12 is wider than the original width W11. This is because the PSA is viscoelastic which is flowable and sticky. When the force sensor 100 is depressed, the PSA spacer 14 is influenced and deformed downward slowly. The deformation of the PSA spacer 14 influences the deformation of the piezo material 13 and causes depression signal stabilization delay. Similarly, while the force sensor 100 is released, the restoration of the PSA spacer 14 affects the restoration of the piezo material 13 and causes restoration signal stabilization delay.
The disadvantage for the prior art is actuation signal stabilization delay when the force sensor 100 is depressed with a constant force, and the restoration signal stabilization is also delayed after the force sensor 100 is released. A quick response force sensor needs to be developed for accelerating the response speed to accurately measure a correct force signal.
FIG. 2 shows a graph of Impedance vs Time for the prior art.
FIG. 2 shows an impedance I0 for a baseline signal level at time t0 for the force sensor 100 when the force sensor 100 is in standby. The force sensor 100 is depressed at time t1 with a constant force, and the impedance goes down towards Impedance I2 for a steady-state signal level. The actual signal goes down to I1 at time t1+3 s where impedance I1 is within 10% of impedance I2.
The 10% difference is calculated as follows:
ABS(I1−I2)/I2≤10%; wherein
ABS: absolute value.
I1: Impedance for actual signal.
I2: Impedance for the steady-state signal level for a fixed force.
The force sensor 100 is released at time t2, the impedance goes up approaches the baseline signal level I0. The actual impedance signal reaches I3 at time t2+3 s where impedance I3 is within 10% of impedance I0 for the baseline signal level.
The 10% difference is calculated as follows:
ABS(I0−I3)/I0≤10%; wherein
I3: Impedance for actual signal.
I0: Impedance for the baseline signal level.
It shows a force signal delay at least 3 second before the force signal being stable.
FIGS. 3A-3B show a peeling test for the prior art.
FIG. 3A shows the prior art before the peeling test.
FIG. 3A is the same as FIG. 1A which shows the force sensor 100 before peeling test being applied. A force sensor 100 is secured from bottom side and an upward peeling force is applied on the top substrate 11.
FIG. 3B shows the prior art after the peeling test.
FIG. 3B shows the PSA spacer 14 is torn apart and residues 141 of the PSA spacer 14 remains on a bottom surface of the top substrate 11 since the PSA spacer 14 is viscoelastic which has a cohesive force smaller than an adhesive force.
BRIEF DESCRIPTION OF THE DRAWINGS
FIGS. 1A-1B, 2 and 3A-3B show a prior art.
FIGS. 4A-4B and 5 show a first embodiment according to the present invention.
FIGS. 6A-6C show different types for the SSB spacer according to the present invention.
FIGS. 7A-8B show different positions for the SSB spacer according to the present invention.
FIGS. 9A-9B show a peeling test applied on the force sensor according to the present invention.
FIGS. 10A-10B show a cutting test applied on the force sensor according to the present invention.
FIGS. 11A-11B show a piezo-capacitive force sensor 200′ in a status before being depressed.
FIG. 12 shows a graph of Capacitance vs Time according to the present invention.
DETAILED DESCRIPTION OF THE INVENTION
A fast response force sensor is disclosed. The force sensor utilizes a solid-state bonding (SSB) spacer. The SSB spacer is sandwiched between a top stack and a bottom stack. The fast response force sensor responds rapidly to a force applied thereon. The SSB spacer maintains a fixed position between the top stack and the bottom stack before and after the fast response force sensor being depressed. The SSB spacer shall not significantly change its dimension before and after a force is applied against the force sensor. The SSB spacer is in a solid state and is not involved in the deformed while the fast response force sensor is depressed by a user, and therefore the fast response force sensor responds quickly to a force applied against the fast response force sensor.
The piezo material 13, 13B is a piezo-resistive material exemplified in the application. The piezo material 13, 13B is selected from a group consisting of resistive type material, electrostatic type material, and capacitive type material.
FIGS. 4A-4B and 5 show a first embodiment according to the present invention.
FIG. 4A shows the force sensor 200 in a status before being depressed.
FIG. 4A shows a force sensor 200 which comprises a top stack 10, a solid-state bonding (SSB) spacer 24, and a bottom stack 10B. The top stack further comprises a top substrate 11, a top electrode 12, and a top piezo material 13 as an example. The top electrode 12 is configured on a bottom surface of the top substrate 11, and the bottom piezo material 13 is configured on a bottom side of the bottom electrode 12.
The bottom stack comprises, similar to the top stack, a bottom substrate 11B, a bottom electrode 12B, and a bottom piezo material 13B as an example. The bottom electrode 12B is configured on a top side of the bottom substrate 11B, and the bottom piezo material 13B is configured on a top side of the bottom electrode 12B.
The SSB spacer 24 is configured between the top substrate 11 and the bottom substrate 11B to keep a fixed relative position between the top substrate 11 and the bottom substrate 11B in a baseline state while the force sensor 200 is in standby; and a control circuit (not shown) is electrically coupled to the force sensor 200 for sensing an output signal responding to a force applied against the force sensor 200. The SSB spacer 24 has a height G21 and a width W21 while the force sensor 200 is in standby.
FIG. 4B shows the force sensor 200 in a status after being depressed.
FIG. 4B shows while the force sensor 200 is depressed, SSB spacer 24 does not substantially change its dimension. In a section view, the height G22 is substantially the same as the original height G21 and the width W22 is substantially the same as the original width W21. This is because the SSB spacer is solid and therefore not flowable and not viscous. When the force sensor 200 is depressed, the SSB spacer 24 maintains a substantially fixed shape. The SSB spacer 24 does not significantly influence the deformation rate of the piezo material 13 and causes little depression signal delay. Similarly while the force sensor 200 is released, little restoration of the SSB spacer 24 is needed, and almost no restoration signal delay is caused by the spacer.
In an output vs. time graph, while the force sensor is being depressed, a stabilization time to reach an Impedance I1 within 10% of an Impedance I2 for a steady-state signal level is within one third (⅓) second after a constant external force is applied against the force sensor 200.
In an output Impedance vs. time graph, while the force sensor being released, a stabilization time to reach an Impedance I3 within 10% of an Impedance I0 for the baseline signal level is within one third (⅓) second after the external force is released from the force sensor 200.
FIG. 5 shows a graph of Impedance vs Time according to the present invention.
FIG. 5 shows an impedance I0 for a baseline signal level at time t0 for the force sensor 200 when the force sensor 200 is in standby. The force sensor 200 is depressed at time t1 with a constant force, the impedance goes down towards impedance I2 for a steady-state signal level. The actual signal drops to I1 at time t1+0.1 s where impedance I1 is within 10% of impedance I2.
The 10% difference is calculated as follows:
ABS(I1−I2)/I2≤10%; wherein
ABS: absolute value.
I1: Impedance for actual signal.
I2: Impedance for the steady-state signal level.
The force sensor 200 is released at time t2, the impedance goes up swiftly and towards the baseline signal level I0. The actual signal goes up to I3 at time t2+0.1 s where impedance I3 is within 10% of impedance I0 for the baseline signal level.
The 10% difference is calculated as follows:
ABS(I0−I3)/I0≤10%; wherein
ABS: absolute value.
I3: Impedance for actual signal.
I0: Impedance for the baseline signal level.
It shows a force signal responding quickly, where the response time is as small as 0.1 second before the force signal being stable.
FIGS. 6A-6C show different types for the SSB spacer according to the present invention.
FIG. 6A shows the SSB spacer 24 is a circular wall in a top view of the SSB spacer 24.
FIG. 6B shows the SSB spacer 24 is a pair of a half-circular wall in a top view of the SSB spacer 24.
FIG. 6B shows the SSB spacer 24 is four of a quarter-circular wall in a top view of the SSB spacer 24.
FIGS. 7A-7B and 8B show different positions for the SSB spacer according to the present invention.
FIG. 7A shows the top piezo material 13 extends laterally beyond a side edge of the top electrode 12 to cover a portion of the bottom surface of the top substrate 11, and the extended top piezo material 13 is configured between the top substrate 11 and the SSB spacer 24 so that a top end of the SSB spacer 24 connects to the top piezo material 13. Similarly, the bottom piezo material 13B extends laterally beyond a side edge of the bottom electrode 12B to cover a portion of the top surface of the bottom substrate 11B, and the extended bottom piezo material 13B is configured between the bottom substrate 11B and the SSB spacer 24 so that a bottom end of the SSB spacer 24 connects to the bottom piezo material 13B.
FIG. 7B shows the force sensor 200 further comprises a top insulation layer 15 configured in an area between the top substrate 11 and the SSB spacer 24 so that a top end of the SSB spacer 24 connects to the top insulation layer 15. Similarly, a bottom insulation layer 15B configured in an area between the bottom substrate 11B and the SSB spacer 24 so that a bottom end of the SSB spacer 24 connects to the bottom insulation layer 15B.
FIG. 8A shows the top electrode 12 of the force sensor 200 extends laterally to an area between the top substrate 11 and the SSB spacer 24 so that a top end of the SSB spacer 24 connects to the top electrode 12. The bottom piezo material 13B of the force sensor 200 extends laterally to an area between the bottom substrate 11B and the SSB spacer 24 so that a bottom end of the SSB spacer 24 connects to the bottom piezo material 13B.
In a section view, the top electrode 12 and the bottom electrode 12B extend in an opposite direction.
FIG. 8B shows a configuration similar to FIG. 8A, but the difference is, in a section view, the top electrode 12 and the bottom electrode 12B extend in a same direction so that the left SSB spacer 24 connects top piezo material 13 and bottom piezo material 13B, and the right SSB spacer 24 connects top electrode 12 and bottom electrode 12B.
The piezo material 13, 13B is a piezo-resistive material exemplified in the application only. The piezo material 13, 13B can be one material selected from a group consisting of electrostatic material, resistive material, and capacitive material.
The SSB spacer 24 is solid at room temperature and is formed through a phase-change process which transforms the spacer material from a flowable state into a solid state. The phase-change process is selected from a group consisting of: solvent evaporation for a glue, UV radiation for a UV cured adhesive, thermal curing of thermoset adhesive, and heating and cooling for hot melt adhesive.
The SSB spacer 24 usually has a cohesive strength larger than an adhesive strength at room temperature, upon mechanical separation of the bonding interface at room temperature, each of the broken surfaces remains dry without having any tacky residues.
The SSB spacer 24 has a tan δ<1 at room temperature; wherein
tan δ is a loss tangent (tan δ=G″/G′) for the solid-state bonding spacer;
G″ is a coefficient for elastic behavior;
G′ is a coefficient for viscous behavior.
FIGS. 9A-9B show a peeling test applied on the force sensor according to the present invention
FIG. 9A shows the force sensor before the peeling test.
FIG. 9A is the same as FIG. 4A which shows the force sensor 200 before peeling test being applied. A force sensor 200 is secured from bottom side and an upward peeling force is applied on the top substrate 11.
FIG. 9B shows the force sensor after the peeling test.
FIG. 9B shows when the top substrate 11 is torn apart from the SSB spacer 24, no residues of the SSB spacer 24 remain on a bottom surface of the top substrate 11 since the SSB spacer 24 is solid which has a cohesive force larger than an adhesive force. Re-bonding is irreversible at <1 kg/cm̂2 at room temperature for the separation between the top substrate 11 and the SSB spacer 24.
FIGS. 10A-10B show a cutting test applied on the force sensor according to the present invention.
FIG. 10A shows the force sensor before a cutting test being applied.
FIG. 10A is the same as FIG. 9A which shows the force sensor 200 before cutting is applied. A force sensor 200 is secured from bottom side and an horizontal cutting force is applied on the SSB spacer 24.
FIG. 10B shows the force sensor after the cutting test being applied.
FIG. 10B shows the SSB spacer 24 is cut and a clear cutting surface is obtained, no sticky material remained on either cutting surface of the separated SSB spacers 24.
FIGS. 11A-11B show a piezo-capacitive force sensor 200′ in a status before being depressed.
Like the piezo-resistive force sensor 200 designed with SSB spacer 24 as described in previous paragraph in this application, similarly, a piezo-capacitive force sensor 200′ can also be designed with SSB spacer 24.
FIG. 11A shows a piezo-capacitive force sensor 200′ which comprises a top stack 10′, a solid-state bonding (SSB) spacer 24, and a bottom stack 10′B. The top stack further comprises a top substrate 11, a top electrode 12, and a top piezo-capacitive material 13′ as an example. The top electrode 12 is configured on a bottom surface of the top substrate 11, and the bottom piezo-capacitive material 13′ is configured on a bottom side of the bottom electrode 12.
The bottom stack comprises, similar to the top stack, a bottom substrate 11B, a bottom electrode 12B, and a bottom piezo-capacitive material 13′B as an example. The bottom electrode 12B is configured on a top side of the bottom substrate 11B, and the bottom piezo-capacitive material 13′B is configured on a top side of the bottom electrode 12B.
The SSB spacer 24 is configured between the top substrate 11 and the bottom substrate 11B to keep a fixed relative position between the top substrate 11 and the bottom substrate 11B in a baseline state while the piezo-capacitive force sensor 200′ is in standby; and a control circuit (not shown) is electrically coupled to the force sensor 200′ for sensing an output signal responding to a force applied against the piezo-capacitive force sensor 200′. The SSB spacer 24 has a height G21 and a width W21 while the force sensor 200 is in standby.
FIG. 11B shows the piezo-capacitive force sensor 200′ in a status after being depressed.
FIG. 11B shows while the piezo-capacitive force sensor 200′ is depressed, SSB spacer 24 does not substantially change its dimension. In a section view, the height G22 is substantially the same as the original height G21 and the width W22 is substantially the same as the original width W21. This is because the SSB spacer 24 is solid and therefore not flowable and not viscous. When the piezo-capacitive force sensor 200′ is depressed, the SSB spacer 24 maintains a substantially fixed shape. The SSB spacer 24 does not significantly influence the deformation rate of the piezo-capacitive material 13′ and causes no depression signal delay. Similarly, while the piezo-capacitive force sensor 200′ is released, very little restoration of the SSB spacer 24 is needed, and little restoration signal delay is caused by the SSB spacer 24.
In an output vs. time graph, while the piezo-capacitive force sensor is being depressed, a stabilization time to reach a Capacitance C1 within 10% of a Capacitance C2 for a steady-state signal level is within one third (⅓) second after a constant external force is applied against the force sensor 200.
In an output Capacitance vs. time graph, while the piezo-capacitive force sensor being released, a stabilization time to reach a Capacitance C3 within 10% of a Capacitance C0 for the baseline signal level is within one third (⅓) second after the external force is released from the piezo-capacitive force sensor 200′.
FIG. 12 shows a graph of Capacitance vs Time according to the present invention.
FIG. 12 shows a Capacitance C0 for a baseline signal level at time t0 for the force sensor 200 when the force sensor 200 is in standby. The piezo-capacitive force sensor 200′ is depressed at time t1 with a constant force, the Capacitance goes up towards Capacitance C2 for a steady-state signal level. The actual signal climbs to C1 at time t1+0.1 s where Capacitance C1 is within 10% of Capacitance C2.
The 10% difference is calculated as follows:
ABS(C1−C2)/C2≤10%; wherein
ABS: absolute value.
C1: Capacitance for actual signal.
C2: Capacitance for the steady-state signal level.
The piezo-capacitive force sensor 200′ is released at time t2, the capacitance goes down swiftly and towards the baseline signal level C0. The actual signal goes down to C3 at time t2+0.1 s where Capacitance C3 is within 10% of Capacitance C0 for the baseline signal level.
The 10% difference is calculated as follows:
ABS(C0−C3)/C0≤10%; wherein
ABS: absolute value.
C3: Capacitance for actual signal.
C0: Capacitance for the baseline signal level.
It shows a force signal responding quickly, where the response time is as small as 0.1 second before the force signal being stable.
While several embodiments have been described by way of example, it will be apparent to those skilled in the art that various modifications may be configured without departs from the spirit of the present invention. Such modifications are all within the scope of the present invention, as defined by the appended claims.
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Numerical system
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10, 10′ top stack
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100 force sensor
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10B, 10′B top stack
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11 top substrate
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11B bottom substrate
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12 top electrode
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12B bottom electrode
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13 top piezo material
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13′ top piezo-capacitive material
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13′B bottom piezo-capacitive material
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13B bottom piezo material
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14 PSA spacer
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141 residues
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15 top insulation layer
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15B bottom insulation layer
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200 force sensor
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200′ piezo-capacitive force sensor
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24 SSB spacer
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G21, G22 height
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W21, W22 width
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Patent Application
20180313703
