Claims
- 1. A formed substrate, which is a valve-acting metal substrate having a dielectric film, wherein the surface of the valve-acting metal having a dielectric film is at least partially covered with an oxide comprising Si, valve-acting metal element and O.
- 2. The formed substrate as claimed in claim 1, wherein the valve-acting metal substrate is one member selected from aluminum, tantalum, titanium, niobium and an alloy thereof.
- 3. The formed substrate as claimed in claim 1, wherein the valve-acting metal substrate is a formed aluminum foil or plate.
- 4. The formed substrate as claimed in claim 2 or 3, wherein in the XPS analysis on the surface of the formed substrate having an aluminum oxide dielectric film at least partially covered with an oxide comprising Si, Al and O, when the binding energy of Si metal is 99.7 eV and the binding energy of Si in SiO2 is 103.4 eV, the binding energy of Si in the oxide is from 100.0 to 103.2 eV.
- 5. The formed substrate as claimed in claim 2 or 3, wherein in the XPS analysis on the surface of the formed substrate having an aluminum oxide dielectric film at least partially covered with an oxide comprising Si, Al and O, when the binding energy of O in Al2O3 is 531.0 eV and the binding energy of O in SiO2 is 532.5 eV, the binding energy of O in the oxide is from 529.0 to 532.3 eV.
- 6. The formed substrate as claimed in claim 4 or 5, wherein the oxide comprising Si, Al and O contains a compound having an Si—O—Al bond.
- 7. The formed substrate as claimed in claim 2 or 3, comprising a formed foil having an aluminum oxide dielectric film with the surface modified with Si, wherein the content of Si present in the foil decreases continuously from the surface of the aluminum oxide dielectric film toward the inner part in some regions in thickness of the aluminum oxide dielectric film.
- 8. The formed substrate as claimed in claim 7, comprising a formed foil having an aluminum oxide dielectric film with the surface modified with Si, wherin the content ratio of Si measured by TEM-EDX and defined by the following formula:
- 9. The formed substrate as claimed in any one of claims 1 to 8, wherein the valve-acting metal substrate having a dielectric film is electrochemically formed at a voltage of less than 20 V.
- 10. A production method of the formed substrate as claimed in claim 1, wherein the valve-acting metal substrate which is one member selected from aluminum, tantalum, titanium, niobium and an alloy thereof is subjected to electrochemical formation using an electrolytic solution containing alkali silicate and the surface of the valve-acting metal is at least partially covered with an oxide comprising Si, valve-acting metal element and O.
- 11. The production method of a formed substrate as claimed in claim 10, wherein the aluminum valve-acting metal substrate having a dielectric film is subjected to electrochemical formation using an electrolytic solution containing alkali silicate and the surface of the valve-acting metal is at least partially covered with an oxide comprising Si, valve-acting metal element and O.
- 12. The production method of the formed aluminum substrate as claimed in claim 11, comprising a step of electrochemically forming the aluminum substrate using an electrolytic solution containing an acid and/or a salt thereof, and a step of electrochemically forming the substrate using an electrolytic solution containing alkali silicate, wherein the surface of the valve-acting metal is at least partially covered with an oxide comprising Si, alminum and O.
- 13. The production method of the formed aluminum substrate as claimed in claim 11, comprising a step of electrochemically forming the aluminum substrate using an electrolytic solution containing an acid and/or a salt thereof, a step of electrochemically forming the substrate using an electrolytic solution containing alkali silicate, and a step of treating the substrate with heat, wherein the surface of the valve-acting metal is at least partially covered with an oxide comprising Si, aluminum and O.
- 14. The production method of the formed aluminum substrate as claimed in any one of claims 10 to 13, wherein the concentration of the electrolytic solution containing alkali silicate is within the range of 0.001 to 15 mass %.
- 15. The production method of the formed aluminum substrate as claimed in any one of claims 10 to 14, wherein the temperature of the electrolytic solution containing alkali silicate is within the range of 10 to 100° C.
- 16. The production method of the formed aluminum substrate as claimed in any one of claims 10 to 15, wherein alkali silicate contained in the electrolytic solution is at least one selected from the group consisting of potassium silicate, sodium silicate, calcium silicate and lithium silicate.
- 17. The production method of the formed aluminum substrate as claimed in any one of claims 11 to 16, wherein the electrochemical formation is performed at a voltage of less than 20 V.
- 18. A solid electrolytic capacitor comprising a solid electrolyte formed on the formed substrate as claimed in any one of claims 1 to 9.
- 19. A solid electrolytic capacitor comprising a solid electrolyte formed on the formed substrate obtained by the method as claimed in any one of claims 10 to 17.
- 20. The solid electrolytic capacitor as claimed in claim 18 or 19, wherein the solid electrolyte comprises a π electron-conjugate polymer.
- 21. The solid electrolytic capacitor as claimed in claim 20, wherein the π electron-conjugate polymer is a polymer obtained from a 5-membered heterocyclic compound.
- 22. the solid electrolytic capacitor as claimed in claim 21, wherein the 5-memebered heterocyclic compound is at least one member selected from the group consisting of pyrrole, thiophene, furan, isothianaphthene, 1,3-dihydroisothianaphthene and substitution derivatives thereof.
- 23. The solid electrolytic capacitor as claimed in claim 22, wherein the 5-memebered heterocyclic compound is at least one member selected from the group consisting of 3,4-ethylenedioxythiophene and 1,3-dihydroisothianaphthene.
- 24. The solid electrolytic capacitor as claimed in any one of claims 18 to 23, wherein the solid electrolytic capacitor is obtained by stacking two or more sheets of capacitor elements.
Priority Claims (2)
Number |
Date |
Country |
Kind |
2001-181643 |
Jun 2001 |
JP |
|
2001-271737 |
Sep 2001 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is based on the provisions of 35 U.S.C. Article 111(a) with claiming the benefit of filing dates of U.S. provisional application Serial No. 60/299,769 filed on Jun. 22, 2001 and U.S. provisional application Serial No. 60/322,426 filed on Sep. 17, 2001, under the provisions of 35 U.S.C. 111(b), pursuant to 35 U.S.C. Article 119(e)(1).
PCT Information
Filing Document |
Filing Date |
Country |
Kind |
PCT/JP02/05785 |
6/11/2002 |
WO |
|