Formulation for removal of photoresist, etch residue and BARC

Abstract

A formulation for removing photoresist, ion implanted photoresist, etch residue or BARC comprises: an ammonium hydroxide and a 2-aminobenzothiazole, remainder water. Preferably the formulation comprises: tetramethyl ammonium hydroxide, tolyltriazole, propylene glycol, 2-aminobenzothiazole, dipropylene glycol monomethyl ether, remainder water; more preferably: tetramethyl ammonium hydroxide 1-15 wt %, tolyltriazole 1-5 wt %, propylene glycol 5-15 wt %, 2-aminobenzothiazole 1-10 wt %; dipropylene glycol monomethyl ether 20-45 wt %, remainder water. The invention is also a method of removing materials selected from the group consisting of photoresist, etch residue, BARC and combinations thereof, from a substrate comprising: applying a formulation, described above, to the substrate to remove the material from the substrate.

Description

Claims

1. A formulation for removing photoresist, ion implanted photoresist, BARC and/or etch residue wherein the formulation comprises: an ammonium hydroxide and a 2-aminobenzothiazole, remainder water, provided that the hydroxide should have no more than 100 ppm contamination of metals.

2. The formulation of claim 1 is free of an oxidizer, abrasive particles.

3. The formulation of claim 1 wherein the ammonium hydroxide is selected from the group consisting of tetramethyl ammonium hydroxide, tetramethylammonium fluoride and the mixtures thereof.

4. The formulation of claim 1 further comprises 0 to 60 wt % of a water soluble organic solvent selected from the group consisting of dimethylacetamide (DMAC), N-methyl pyrrolidinone (NMP), dimethylsulfoxide (DMSO), dimethylformamide, N-methylformamide, formamide, dimethyl-2-piperidone (DMPD), tetrahydrofurfuryl alcohol, glycerol, ethylene glycol, amides, alcohols, sulfoxides, multifunctional compounds, hydroxyamides, amino alcohols diols and polyols, (C2-C20) alkanediols, (C3-C20) alkanetriols, cyclic alcohols, propylene glycol, tetrahydrofurfuryl alcohol, diacetone alcohol,1,4-cyclohexanedimethanol, glycol ether and the mixtures thereof.

5. The formulation of claim 1 further comprises 0.1 to 5 wt % of a substituted hydroxylamine or an acid salt.

6. The formulation of claim 1 further comprises 0 to 10 wt % of an organic acid selected from the group consisting of citric acid, anthranilic acid, gallic acid, benzoic acid, malonic acid, maleic acid, fumaric acid, D,L-malic acid, isophthalic acid, phthalic acid, lactic acid and the mixtures thereof.

7. The formulation of claim 1 further comprises 0 to 20 wt % of a corrosion inhibitors selected from the group consisting of organic acid salts, phenols, acids, triazoles, catechol, benzotriazole (BZT), resorcinol, maleic anhydride, phthalic anhydride, catechol, pyrogallol, esters of gallic acid, carboxybenzotriazole, fructose, ammonium thiosulfate, glycine, tetramethylguanidine, iminodiacetic acid, dimethylacetoacetamide, trihydroxybenzene, dihydroxybenzene, salicyclohydroxamic, and mixtures thereof.

8. The formulation of claim 1 further comprises an additive selected from the group consisting of: surfactants, chelating agents, chemical modifiers, dyes, biocides, and the mixtures thereof; provided that the additive does not adversely affect the stripping and cleaning ability of the formulation or the integrity of the underlying metal, silicon, silicon dioxide, interlevel dielectric materials, low-k and/or high-k materials.

9. A formulation for removing photoresist, ion implanted photoresist, BARC and/or etch residue wherein the formulation comprises: tetramethyl ammonium hydroxide, tolyltriazole, propylene glycol, 2-aminobenzothiazole, dipropylene glycol monomethyl ether, remainder water, provided that the hydroxide should have no more than 100 ppm contamination of metals.

10. The formulation of claim 9 wherein the formulation comprises: tetramethyl ammonium hydroxide 1-15 wt %, tolyltriazole 1-5 wt %, propylene glycol 5-15 wt %, 2-aminobenzothiazole 1-10 wt %; dipropylene glycol monomethyl ether 20-45 wt %, remainder water.

11. The formulation of claim 9 wherein the formulation comprises: tetramethyl ammonium hydroxide 6.5 wt %, tolyltriazole 3 wt %, propylene glycol 10 wt %, 2-aminobenzothiazole 6 wt %; dipropylene glycol monomethyl ether 39 wt %, remainder water.

12. The formulation of claim 9 wherein the formulation comprises: tetramethyl ammonium hydroxide 5 wt %, tolyltriazole 3 wt %, propylene glycol 12.13 wt %, 2-aminobenzothiazole 1.5 wt %; dipropylene glycol monomethyl ether 40 wt %, remainder water.

13. A method of removing materials selected from the group consisting of photoresist, ion implanted photoresist, etch residue, BARC and combinations thereof, from a substrate comprising: applying a formulation according to claim 1 to the substrate to remove the material from the substrate.

14. The method of claim 13 wherein the formulation is free of an oxidizer, abrasive particles.

15. The method of claim 13 wherein the formulation further comprises 0% to 60% by weight of a water soluble organic solvent selected from the group consisting of dimethylacetamide (DMAC), N-methyl pyrrolidinone (NMP), dimethylsulfoxide (DMSO), dimethylformamide, N-methylformamide, formamide, dimethyl-2-piperidone (DMPD), tetrahydrofurfuryl alcohol, glycerol, ethylene glycol, amides, alcohols, sulfoxides, multifunctional compounds, hydroxyamides, amino alcohols diols and polyols, (C2-C20) alkanediols, (C3-C20) alkanetriols, cyclic alcohols, propylene glycol, tetrahydrofurfuryl alcohol, diacetone alcohol,1,4-cyclohexanedimethanol, glycol ether and the mixtures thereof.

16. The method of claim 13 wherein the formulation further comprises 0.1 to 5 wt % of a substituted hydroxylamine or an acid salt.

17. The method of claim 13 wherein the formulation further comprises 0 to 10 wt % of an organic acid selected from the group consisting of citric acid, anthranilic acid, gallic acid, benzoic acid, malonic acid, maleic acid, fumaric acid, D,L-malic acid, isophthalic acid, phthalic acid, lactic acid and the mixtures thereof.

18. The method of claim 13 wherein the formulation further comprises 0 to 20 wt % of a corrosion inhibitors selected from the group consisting of organic acid salts, phenols, acids, triazoles, catechol, benzotriazole (BZT), resorcinol, maleic anhydride, phthalic anhydride, catechol, pyrogallol, esters of gallic acid, carboxybenzotriazole, fructose, ammonium thiosulfate, glycine, tetramethylguanidine, iminodiacetic acid, dimethylacetoacetamide, trihydroxybenzene, dihydroxybenzene, salicyclohydroxamic, and mixtures thereof.

19. The method of claim 13 wherein the formulation further comprises an additive selected from the group consisting of: surfactants, chelating agents, chemical modifiers, dyes, biocides, and the mixtures thereof; provided that the additive does not adversely affect the stripping and cleaning ability of the formulation or the integrity of the underlying metal, silicon, silicon dioxide, interlevel dielectric materials, low-k and/or high-k materials.

20. A method of removing materials selected from the group consisting of photoresist, ion implanted photoresist, etch residue, BARC and combinations thereof, from a substrate comprising: applying a formulation according to claim 9 to the substrate to remove the material from the substrate.

21. The method of claim 20 wherein the formulation comprises: tetramethyl ammonium hydroxide 1-15 wt %, tolyltriazole 1-5 wt %, propylene glycol 5-15 wt %, 2-aminobenzothiazole 1-10 wt %; dipropylene glycol monomethyl ether 20-45 wt %, remainder water.

22. The method of claim 20 wherein the formulation comprises: tetramethyl ammonium hydroxide 6.5 wt %, tolyltriazole 3 wt %, propylene glycol 10 wt %, 2-aminobenzothiazole 6 wt %; dipropylene glycol monomethyl ether 39 wt %, remainder water.

23. The method of claim 20 wherein the formulation comprises: tetramethyl ammonium hydroxide 5 wt %, tolyltriazole 3 wt %, propylene glycol 12.13 wt %, 2-aminobenzothiazole 1.5 wt %; dipropylene glycol monomethyl ether 40 wt %, remainder water.