Claims
- 1. A frequency divider comprising:
- a tapped N-bit charge coupled device;
- means connected to a clock input of the charge coupled device for introducing clock pulses thereto;
- means connected to a trigger input of the charge coupled device for introducing an initial propagating trigger pulse thereto to initiate charge injection;
- means connected to a plurality of outputs of the charge coupled device, corresponding to the N bits of the charge coupled device, for selecting transmission of preselected tapped signals from the charge coupled device to an output terminal of the selecting means at which a frequency divided signal appears; and
- feedback means connected between an output terminal of the selecting means and a feedback input terminal of the charge coupled device to provide trigger pulses subsequent to the initial trigger pulse to trigger subsequent charge injection.
- 2. The subject matter of claim 1 together with an output communicating with the Nth bit of the charge coupled device for providing an output pulse when each trigger pulse propagates completely down the N bits of the charge coupled device.
- 3. The subject matter of claim 1 together with means connected to the selecting means for addressing preselected tapped signals from the N bits of the charge coupled device, thus permitting transmission of tapped signals to the selecting means output.
- 4. The subject matter of claim 1 wherein said means for introducing includes a charge source positioned between the first bit of the charge coupled device and the trigger input for coupling the initial trigger pulse to the first bit.
- 5. The circuitry set forth in claim 4 together with means for connecting the output terminal of the selecting means to the charge source for coupling the subsequent trigger pulses to the first bit of the charge coupled device.
- 6. The subject matter set forth in claim 1 wherein the selecting means comprises a plurality of charge sensors, each sensor coupled to the gate of an MOS transistor, the sources of the MOS transistors selectively connected to biasing means and the drains of the MOS transistors connected to the output terminal of the selecting means.
- 7. The subject matter of claim 6 wherein the biasing means are selectively connected to reference potential.
- 8. The circuitry defined in claim 7 wherein the drains of the MOS transistors are also connected to a bias potential through a load resistor.
RIGHTS OF THE GOVERNMENT
The invention described herein may be manufactured, used, and licensed by or for the United States Government for governmental purposes without the payment to me of any royalty thereon.
US Referenced Citations (11)