Claims
- 1. A method for attaching a first surface to a second surface, said method comprising:a) encapsulating a plurality of electrodes in an encapsulant region of said first surface with a barrier material for chemically isolating said plurality of electrodes from a sealing material; b) depositing said sealing material between said first surface and said second surface; and c) subjecting said sealing material to a sealing process in order to attach said first surface to said second surface.
- 2. The method as described in claim 1, further comprising:d) depositing a resistor layer between said plurality of electrodes and said barrier material.
- 3. The method as described in claim 1, further comprising:d) depositing a inter-layer dielectric layer between said plurality of electrodes and said barrier material.
- 4. The method as described in claim 1, further comprising:d) depositing a passivation layer between said plurality of electrodes and said barrier material.
- 5. The method as described in claim 4, wherein said step d) further comprises:depositing a silicon nitride passivation layer.
- 6. The method as described in claim 1, wherein said step a) further comprises:encapsulating a plurality of row and column electrodes with said barrier material.
- 7. The method as described in claim 1, wherein said step a) further comprises:encapsulating said plurality of electrodes in said encapsulant region of said first surface with silicon dioxide.
- 8. The method as described in claim 1, wherein said step a) further comprises:encapsulating said plurality of electrodes in said encapsulant region of said first surface with spin-on-glass (SOG).
- 9. The method as described in claim 1, wherein said step a) further comprises:encapsulating said plurality of electrodes with cermet (SiCrxOy) that includes silicon, chromium, and oxygen.
- 10. The method as described in claim 9, wherein said step a) further comprises:encapsulating said plurality of electrodes with cermet that includes sixty-two percent chromium oxide (Cr2O3) and thirty-eight percent quartz (SiO2).
- 11. The method as described in claim 1, wherein said step c) further comprises:subjecting said sealing material to a laser sealing process.
- 12. The method as described in claim 1, wherein said step c) further comprises:subjecting said sealing material to an oven sealing process.
- 13. The method as described in claim 1, wherein said first surface is a backplate of a field emission display device.
- 14. The method as described in claim 1, wherein said second surface is a faceplate of a field emission display device.
- 15. The method as described in claim 1, wherein said step b) further comprises;depositing a glass frit sealing material that includes lead oxide.
RELATED U.S. APPLICATION
This application is a continuation-in-part to the commonly owned, patent application, Ser. No. 09/893,089, entitled “Frit Protection in Sealing Process for Flat Panel Displays,” with filing date Jun. 26, 2001, and assigned to the assignee of the present invention.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
6019657 |
Chakvorty et al. |
Feb 2000 |
A |
6113450 |
Narayanan et al. |
Sep 2000 |
A |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09/893089 |
Jun 2001 |
US |
Child |
09/922578 |
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US |